BJTs & BJT Amplifiers (Problems)

Q1 Transistors of a particular type have common-base current gains in the range of

0.980    0.995. Find the corresponding range of .

Q2 The common-emitter current gains of two transistors are  = 75 and  = 125.

Determine the common-base current gains.

Q3 An npn transistor is biased in the forward-active mode. The base current is IB =

A and the emitter current is IE =  mA. Determine ,, and IC.

Q4 The emitter current in a pnp transistor biased in the forward-active mode is IE = 2.15
mA. The common-base current gain of the transistor is  = 0.990. Determine , IB, and
IC.

Q5 For the circuit shown in Figure Q5, assume  = 50.

Determine VO, IB, and IC for: (a) VI = 0.2 V, and (b) VI = 3.6
V. Then, calculate the power dissipated in the
transistor for the two conditions. Assume VBE(on) = 0.7
V and VCE(sat) = 0.2 V.

Figure Q5

Q6 For the circuit shown in Figure Q5, let  = 50, and determine VI such that VBC = 0.
Calculate the power dissipated in the transistor.

Q7 Redesign the circuit shown in Figure Q7 such that ICQ =

1.5 mA and VC = +4 V. Assume  = 100 and VBE(on) = 0.7 V.
Also assume that the C-E saturation voltage is 0.2 V.

Figure Q7
Q8 For the circuit shown in Figure Q8, the measured
value of VC is VC = +6.34 V. Determine IB, IE, IC, VCE, ,
and . Assume VBE(on) = 0.7 V. Also assume that the
C-E saturation voltage is 0.2 V.

Figure Q8

Q9 Determine IB, IC, IE, and VEC, assuming  = 50 for the

circuit shown in Figure Q9. Assume VEBon) = 0.7 V.
Also assume that the C-E saturation voltage is 0.2
V.

Figure Q9

Q10 Suppose the circuit shown in Figure Q10 operates in

forward-active mode and has a common-emitter
current gain of 75. Find IB, VC, VCE, and the transistor
power dissipation. Assume VBE(on) = 0.7 V.

Figure Q10
Q11 (a) Design the bias stable network of the amplifier in Figure Q11 to establish a current IE = 1 mA using a
power supply VCC = +12 V, RE = 600 , and RC = 5.36 k. The transistor has a nominal  = 100.
(b) Given that VA  , and VBE (on )  0.7 V, find the small-signal parameters g m , r , and ro .
(c) Find the input resistance Rin and output resistance Rout .
(d) Find the small-signal voltage gain Av  vo / v s .

Figure Q11

Q12 For the transistor in the circuit in Figure Q12, the parameters are   100, VA  , and
V BE (on )  0.7 V. (a) Determine the Q-point. (b) Find the small-signal parameters g m , r , and ro . (c)
Find the small-signal voltage gain Av  vo / v s and the small-signal current gain Ai  io / i s . (d) Find
the input resistances Rib and Ris . (e) Repeat part (c) if a 1 k source resistor is in series with the v s
signal source.

Figure Q12
Q13 For the circuit shown in Figure Q13, the transistor parameters are  = 100 and VA = . Design the circuit
such that ICQ = 0.25 mA and VCEQ = 3 V. Find the small-signal voltage gain Av = vo / vs. Find the input
resistance seen by the signal source vs.

Ri

Figure Q13

Q14 Consider the circuit shown in Figure Q14. The transistor parameters are  = 100 and VA = 100 V.
Determine Ri, Av = vo / vs and Ai = io / is.

Figure Q14