Analog VLSI Lab

Assignment 1
16 July 2018

Problem Statement To study MOS I-V characteristics and plot the following:
(i) Id vs Vgs (ii) Id vs Vds for both NMOS and PMOS for given dimensions:
Channel length:L = 180nm, 250nm, 350nm, 500nm
Channel width: W = 1µm, 2µm, 5µm, 10µm.
Also, to determine the parameters µn , µp , Coxn , Coxp , Vthn , Vthp , λn , λp for the transistors.

Available resources
Cadence Virtuoso design tool, 180nm tsmc model file.

Design Procedure
The circuit set up for determining the NMOS characteristics is shown in Fig. 1. Two voltage
sources are connected, one to the gate terminal (Vgs) and the other to the drain terminal (Vds),
with source common and grounded for both.

Figure 1: Circuit Setup for NMOS

(i) Ids-Vgs characteristics for NMOS:

To obtain Ids-Vgs characteristics, Vds is fixed at 1.8V conforming to the 180nm technology
to provide a suitable bias current and Vgs swept across 0V to 1.8V to carry out an analysis of
the circuit behaviour. The corresponding Ids values are plotted for the various device dimensions

1
 −3 −3
x 10 x 10
6 4.5
W=1um W=1um
W=2um W=2um
W=5um W=5um
W=10um 4 W=10um

3.5

4 3

2.5
Id(A)

Id(A)
3

2 1.5

0.5

0 0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
Vgs(V) Vgs(V)

(a) Channel Length = 180nm (b) Channel Length = 250nm

−3 −3
x 10 x 10
4 3
W=1um W=1um
W=2um W=2um
W=5um W=5um
W=10um W=10um
3.5
2.5

2
2.5
Id(A)

Id(A)
2 1.5

1.5
1

0.5
0.5

0 0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
Vgs(V) Vgs(V)

(c) Channel Length = 350nm (d) Channel Length = 500nm

Figure 2: Ids-Vgs characteristcs for NMOS

given, as shown in Fig. 2. For each L value, the characteristics are plotted for the four channel
width W values given.
Observations: It is observed that for a given channel length, the nmos conducts for smaller
values of Vgs when the width of the nmos is increased. Also, the current is more for shorter
channel lengths owing to the inverse relationship of the drain current to the channel length.

(ii) Ids-Vds characteristics for NMOS: To obtain Ids-Vds characteristics, Vgs is fixed at
1.8V and Vds is swept across 0V to 1.8V and the corresponding Ids values are plotted for the
various device dimensions given, as shown in Fig. 3. Again, for each L value, the characteristics
are plotted for the four channel width W values given.
Observations: It is observed that for a given channel length, the drain to source current
increases as the width of the nmos is increased. Also, the current is more for shorter channel
lengths(e.g. 180nm) and gradually decreases as the channel length is increased(500nm).

(iii)Channel length modulation parameter λn , charge-carrier effective mobility µn ,

gate oxide capacitance per unit area Cox and exponent n
The MOS parameters λn , µn , Cox are calculated using the MOSFET current equations as given
below. The characteristics curves are plotted for Ids and used to find these parameters for the
different device dimensions given.

MOS current equation for Linear region:

Vds2
Ids = kn [(Vgs − Vtn )Vds − ] (0.1)
2

2
 −3 −3
x 10 x 10
6 4.5
W=1um W=1um
W=2um W=2um
W=5um W=5um
W=10um 4 W=10um

3.5

4 3

2.5
Id(A)

Id(A)
3

2 1.5

0.5

0 0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
Vgs(V) Vgs(V)

(a) Channel Length = 180nm (b) Channel Length = 250nm

−3 −3
x 10 x 10
4 3
W=1um W=1um
W=2um W=2um
W=5um W=5um
W=10um W=10um
3.5
2.5

2
2.5
Id(A)

Id(A)
2 1.5

1.5
1

0.5
0.5

0 0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
Vgs(V) Vgs(V)

(c) Channel Length = 350nm (d) Channel Length = 500nm

Figure 3: Ids-Vds characteristcs for NMOS

MOS current equation for Saturation region:

(Vgs − Vtn )n
Ids = kn (1 + λVds ) (0.2)
2
where kn = µn Cox W
L
.

Keeping Vgs constant and taking any two Ids values in the saturation region along with their
corresponding Vds values, λ is found from Ids vs Vds curves using the following relation:

Ids1 (1 + λVds1 )
= (0.3)
Ids2 (1 + λVds2 )

Similarly, keeping Vds constant and taking two Ids values and their corresponding Vgs values
from the Ids vs Vgs curves, the exponent n is calculated from the equation below:

Id1 (Vgs1 − Vtn )n

= (0.4)
Id2 (Vgs2 − Vtn )n
The parameters calculated from eq. 0.2, eq. 0.3 and eq. 0.4 are formulated in table 1.

3
 L(nm) W(µm) Vth (mV ) λ(V − 1) n µn (cm2 /V /s) kn0 (µA/V 2 )
180 1 544.162 0.098734957 1.182079067 259.5 224.96055
180 2 547.694 0.098630762 1.168394399 260.3 225.65407
180 5 551.303 0.101584757 1.156117592 261.2 226.43428
180 10 552.885 0.102559125 1.153092538 261.3 226.52097
250 1 552.388 0.086939502 1.32990435 255.5 221.49295
250 2 556.672 0.081168115 1.318654833 258.1 223.74689
250 5 559.834 0.080340536 1.306335041 259.7 225.13393
250 10 561.24 0.080058089 1.303176966 260.1 225.48069
350 1 542.075 0.085658892 1.418709047 254.6 220.71274
350 2 546.011 0.077975472 1.407068398 258.4 224.00696
350 5 549.003 0.075556502 1.394819097 260.6 225.91414
350 10 550.325 0.074775049 1.391692938 261.2 226.43428
500 1 528.188 0.08728944 1.486135691 254.9 220.97281
500 2 531.959 0.077845737 1.471748525 259.7 225.13393
500 5 535.016 0.074444197 1.459263695 262.2 227.30118
500 10 536.329 0.073465443 1.456347071 262.9 227.90801

Table 1: NMOS parameters

A similar approach is followed to obtain the PMOS characteristics and the given parameters
for the different device dimensions. The circuit diagram for PMOS analysis is shown in fig. xxx

Figure 4: Circuit Setup for PMOS

The corresponding plots are shown in Fig.5 and 6.

4
 −3 −3
x 10 x 10
0 0
W=1um W=1um
W=2um W=2um
W=5um W=5um
−0.2
W=10um W=10um

−0.5
−0.4

−0.6
−1

−0.8
Id(A)

Id(A)
−1.5 −1

−1.2

−2
−1.4

−1.6
−2.5

−1.8

−3 −2
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
Vgs(V) Vgs(V)

(a) Channel Length = 180nm (b) Channel Length = 250nm

−3 −4
x 10 x 10
0 1
W=1um W=1um
W=2um W=2um
W=5um W=5um
0
W=10um W=10um
−0.2

−1

−0.4
−2

−3
−0.6
Id(A)

Id(A)
−4

−0.8
−5

−6
−1

−7

−1.2
−8

−1.4 −9
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
Vgs(V) Vgs(V)

(c) Channel Length = 350nm (d) Channel Length = 500nm

Figure 5: Ids-Vgs characteristcs for PMOS

−3 −3
x 10 x 10
0 0

−0.2

−0.5
−0.4

−0.6
−1

−0.8
Id(A)

Id(A)

−1.5 −1

−1.2

−2
−1.4

−1.6
−2.5

W=1um W=1um
−1.8
W=2um W=2um
W=5um W=5um
W=10um W=10um
−3 −2
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
Vgs(V) Vgs(V)

(a) Channel Length = 180nm (b) Channel Length = 250nm

−3 −4
x 10 x 10
0 1

0
−0.2

−1

−0.4
−2

−3
−0.6
Id(A)

Id(A)

−4

−0.8
−5

−6
−1

−7

−1.2
W=1um W=1um
−8
W=2um W=2um
W=5um W=5um
W=10um W=10um
−1.4 −9
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
Vgs(V) Vgs(V)

(c) Channel Length = 350nm (d) Channel Length = 500nm

Figure 6: Ids-Vds characteristcs for PMOS

The parameters calculated for PMOS are given in table 2.

5
L(nm) W(µm) |Vth |(mV ) λ(V − 1) n µp (cm2 /V /s) kp0 (µA/V 2 )
180 1 586.269 0.181584825 1.2809 59.59 50.657459
180 2 592.753 0.175300851 1.2649 65.64 55.800564
180 5 601.071 0.169653028 1.258 71.17 60.501617
180 10 603.919 0.167682164 1.2559 73.07 62.116807
250 1 557.848 0.156134884 1.3951 59.55 50.623455
250 2 563.774 0.152799071 1.4012 62.98 53.539298
250 5 570.734 0.147682729 1.4095 66.51 56.540151
250 10 573.137 0.145837962 1.412 67.74 57.585774
350 1 533.38 0.132564225 1.4763 59.41 50.504441
350 2 538.576 0.124755459 1.4923 61.47 52.255647
350 5 544.517 0.115544419 1.5036 63.91 54.329891
350 10 546.568 0.112542493 1.5068 64.76 55.052476
500 1 515.992 0.112360782 1.5521 58.96 50.121896
500 2 520.741 0.102302798 1.5666 60.21 51.184521
500 5 526.071 0.093413678 1.5778 61.96 52.672196
500 10 527.916 0.090717001 1.5814 62.57 53.190757

Table 2: PMOS parameters