PD - 9.

1097C

IRF7105
HEXFET® Power MOSFET
l Advanced Process Technology N-C HANNE L M O S F E T

l Ultra Low On-Resistance S1

1 8
D1 N-Ch P-Ch
l Dual N and P Channel Mosfet G1 2 7
D1
l Surface Mount VDSS 25V -25V
3 6
S2 D2
l Available in Tape & Reel
4
l Dynamic dv/dt Rating G2 5
D2 RDS(on) 0.10Ω 0.25Ω
P -C HANNE L M O S F E T
l Fast Switching
T op V ie w ID 3.5A -2.3A
Description
Fourth Generation HEXFETs from International
Rectifier utilize advanced processing techniques to
achieve the lowest possible on-resistance per silicon
area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the
designer with an extremely efficient device for use in
a wide variety of applications.

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and S O -8
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.

Absolute Maximum Ratings

Max.
Parameter Units
N-Channel P-Channel
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 3.5 -2.3
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 2.8 -1.8 A
IDM Pulsed Drain Current  14 -10
PD @TC = 25°C Power Dissipation 2.0 W
Linear Derating Factor 0.016 W/°C
VGS Gate-to-Source Voltage ± 20 V
dv/dt Peak Diode Recovery dv/dt ‚ 3.0 -3.0 V/nS
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C

Thermal Resistance Ratings

Parameter Min. Typ. Max. Units
RθJA Maximum Junction-to-Ambient „ ––– ––– 62.5 °C/W

11/4/97
IRF7105
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage N-Ch 25 — — VGS = 0V, ID = 250µA
V
P-Ch -25 — — VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient N-Ch — 0.030 — Reference to 25°C, ID = 1mA
V/°C
P-Ch — -0.015 — Reference to 25°C, ID = -1mA
— 0.083 0.10 VGS = 10V, ID = 1.0A ƒ
N-Ch
— 0.14 0.16 VGS = 4.5V, ID = 0.50A ƒ
RDS(ON) Static Drain-to-Source On-Resistance Ω
— 0.16 0.25 VGS = -10V, ID = -1.0A ƒ
P-Ch
— 0.30 0.40 VGS = -4.5V, ID = -0.50A ƒ
VGS(th) Gate Threshold Voltage N-Ch 1.0 — 3.0 VDS = VGS, ID = 250µA
V
P-Ch -1.0 — -3.0 VDS = VGS, ID = -250µA
gfs Forward Transconductance N-Ch — 4.3 — VDS = 15V, ID = 3.5A ƒ
S
P-Ch — 3.1 — VDS = -15V, ID = -3.5A ƒ
N-Ch — — 2.0 VDS = 20V, VGS = 0V
I DSS Drain-to-Source Leakage Current P-Ch — — -2.0 VDS = -20V, VGS = 0V,
µA
N-Ch — — 25 VDS = 20V, VGS = 0V, TJ = 55°C
P-Ch — — -25 VDS = -20V, VGS = 0V, TJ = 55°C
IGSS Gate-to-Source Forward Leakage N-P –– — ±100 VGS = ± 20V
Qg Total GateCharge N-Ch — 9.4 27
N-Channel
P-Ch — 10 25
ID = 2.3A, VDS = 12.5V, VGS = 10V
N-Ch — 1.7 —
Qgs Gate-to-Source Charge nC ƒ
P-Ch — 1.9 —
P-Channel
Qgd Gate-to-Drain ("Miller") Charge N-Ch — 3.1 —
ID = -2.3A, VDS = -12.5V, VGS = -10V
P-Ch — 2.8 —
td(on) Turn-On Delay Time N-Ch — 7.0 20
P-Ch — 12 40 N-Channel
VDD = 25V, ID = 1.0A, RG = 6.0Ω,
tr Rise Time N-Ch — 9.0 20
RD = 25Ω
P-Ch — 13 40
ns ƒ
td(off) Turn-Off Delay Time N-Ch — 45 90
P-Channel
P-Ch — 45 90
VDD = -25V, ID = -1.0A, RG = 6.0Ω,
tf Fall Time N-Ch — 25 50
RD = 25Ω
P-Ch — 37 50
LD Internal Drain Inductace N-P — 4.0 — Between lead , 6mm (0.25in.)from
nH
LS Internal Source Inductance N-P — 6.0 — package and center of die contact
C iss Input Capacitance N-Ch — 330 —
N-Channel
P-Ch — 290 —
VGS = 0V, VDS = 15V, ƒ = 1.0MHz
C oss Output Capacitance N-Ch — 250 —
pF
P-Ch — 210 —
P-Channel
Crss Reverse Transfer Capacitance N-Ch — 61 —
VGS = 0V, VDS = -15V, ƒ = 1.0MHz
P-Ch — 67 —

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions
N-Ch — — 2.0
IS Continuous Source Current (Body Diode) P-Ch — — -2.0 A
N-Ch — — 14
ISM Pulsed Source Current (Body Diode)  P-Ch — — -9.2
N-Ch — — 1.2 V TJ = 25°C, IS = 1.3A, VGS = 0V ƒ
VSD Diode Forward Voltage P-Ch — — -1.2 TJ = 25°C, IS = -1.3A, VGS = 0V ƒ
N-Ch — 36 54 ns N-Channel
trr Reverse Recovery Time P-Ch — 69 100 TJ = 25°C, IF = 1.3A, di/dt = 100A/µs
N-Ch — 41 75 nC P-Channel ƒ
Qrr Reverse Recovery Charge P-Ch — 90 180 TJ = 25°C, IF = -1.3A, di/dt = 100A/µs
ton Forward Turn-On Time N-P Intrinsic turn-on time is neglegible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature.

‚ N-Channel ISD ≤ 3.5A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C „ Surface mounted on FR-4 board, t ≤ 10sec.
P-Channel ISD ≤ -2.3A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
 N-Channel
IRF7105
ID , Drain-to-Source Current ( A )

ID , Drain-to-Source Current ( A )
VDS , Drain-to-Source Voltage ( V ) VDS , Drain-to-Source Voltage ( V )

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

RDS (on) , Drain-to-Source On Resistance

ID , Drain-to-Source Current ( A )

( Normalized)

VGS , Gate-to-Source Voltage ( V ) TJ , Junction Temperature ( °C )

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature
VGS , Gate-to-Source Voltage ( V )
C , Capacitance ( pF )

VDS , Drain-to-Source Voltage ( V ) QG , Total Gate Charge ( nC )

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage
IRF7105 N-Channel
ISD , Reverse Drain Current ( A )

ID , Drain Current ( A )
VSD , Source-to-Drain Voltage ( V ) VDS , Drain-to-Source Voltage ( V )

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
RD
VDS

VGS
ID , Drain Current ( A )

D.U.T.
RG
+
V
- DD

10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

VDS
TA , Ambient Temperature ( °C )
90%

Fig 9. Maximum Drain Current Vs.

Ambient Temperature
Current Regulator 10%
Same Type as D.U.T.
VGS
td(on) tr t d(off) tf
50KΩ

12V .2µF Fig 10b. Switching Time Waveforms

.3µF

+
V
D.U.T. - DS QG
10V
VGS QGS QGD

3mA
VG

IG ID
Current Sampling Resistors
Charge

Fig 11a. Gate Charge Test Circuit Fig 11b. Basic Gate Charge Waveform
 P-Channel
IRF7105
-ID , Drain-to-Source Current ( A )

-ID , Drain-to-Source Current ( A )

-VDS , Drain-to-Source Voltage ( V ) -VDS , Drain-to-Source Voltage ( V )

Fig 12. Typical Output Characteristics Fig 13. Typical Output Characteristics

RDS (on) , Drain-to-Source On Resistance

-ID , Drain-to-Source Current ( A )

( Normalized)

-VGS , Gate-to-Source Voltage ( V ) TJ , Junction Temperature ( °C )

Fig 14. Typical Transfer Characteristics Fig 15. Normalized On-Resistance

Vs. Temperature
-VGS , Gate-to-Source Voltage ( V )
C , Capacitance ( pF )

-VDS , Drain-to-Source Voltage ( V ) QG , Total Gate Charge ( nC )

Fig 16. Typical Capacitance Vs. Fig 17. Typical Gate Charge Vs.
Drain-to-Source Voltage Gate-to-Source Voltage
IRF7105 P-Channel
-ISD , Reverse Drain Current ( A )

-ID , Drain Current ( A )

VSD , Source-to-Drain Voltage ( V ) VDS , Drain-to-Source Voltage ( V )

Fig 18. Typical Source-Drain Diode Fig 19. Maximum Safe Operating Area
Forward Voltage RD
VDS

VGS
-ID , Drain Current ( A )

D.U.T.
RG -
+ VDD

-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

Fig 21a. Switching Time Test Circuit

VDS
TA , Ambient Temperature ( °C ) 90%

Fig 20. Maximum Drain Current Vs.

Ambient Temperature
Current Regulator 10%
Same Type as D.U.T.
VGS
td(on) tr t d(off) tf
50KΩ

12V .2µF Fig 21b. Switching Time Waveforms

.3µF
-

D.U.T. +VDS QG
-10V
VGS QGS QGD

-3mA
VG

IG ID
Current Sampling Resistors
Charge

Fig 22a. Gate Charge Test Circuit Fig 22b. Basic Gate Charge Waveform
 N & P-Channel
IRF7105
100

D = 0.50
Thermal Response (Z thJA )

0.20
10
0.10

0.05

0.02
PDM
0.01
1
SINGLE PULSE t1
(THERMAL RESPONSE) t2

Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJA + TA
0.1
0.0001 0.001 0.01 0.1 1 10 100
t1 , Rectangular Pulse Duration (sec)

Fig 23. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

IRF7105
Peak Diode Recovery dv/dt Test Circuit

+ Circuit Layout Considerations

D.U.T
• Low Stray Inductance
• Ground Plane
ƒ
• Low Leakage Inductance
Current Transformer
-

+
‚
„
- +
-

 **
RG • dv/dt controlled by RG +
• ISD controlled by Duty Factor "D"
*
VDD
-
• D.U.T. - Device Under Test
VGS*

* Reverse Polarity for P-Channel

** Use P-Channel Driver for P-Channel Measurements

Driver Gate Drive

P.W.
Period D=
P.W. Period

[VGS=10V ] ***

D.U.T. ISD Waveform

Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
[VDD]
Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent

Ripple ≤ 5% [ ISD ]

*** VGS = 5.0V for Logic Level and 3V Drive Devices

Fig 24. For N and P Channel HEXFETS

 IRF7105

Package Outline
SO-8 Outline
Dimensions are shown in millimeters (inches)
INCHES MILLIMETERS
D DIM
5 MIN MAX MIN MAX
-B-
A .0532 .0688 1.35 1.75
A1 .0040 .0098 0.10 0.25
8 7 6 5
5 B .014 .018 0.36 0.46
E H
-A- 0.25 (.010) M A M C .0075 .0098 0.19 0.25
1 2 3 4
D .189 .196 4.80 4.98
E .150 .157 3.81 3.99
e e .050 BASIC 1.27 BASIC
K x 45°
6X
e1 e1 .025 BASIC 0.635 BASIC
θ
A
H .2284 .2440 5.80 6.20

-C-
K .011 .019 0.28 0.48
0.10 (.004) L 6 C
B 8X
A1 8X 8X L 0.16 .050 0.41 1.27

0.25 (.010) M C A S B S θ 0° 8° 0° 8°
RECOMMENDED FOOTPRINT
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982. 0.72 (.028 )
8X
2. CONTROLLING DIMENSION : INCH.
3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
6.46 ( .255 ) 1.78 (.070)
5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS
8X
MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006).
6 DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE..
1.27 ( .050 )
3X

Part Marking Information

SO-8

E X A M P L E : T H IS IS A N IR F 7 1 0 1

D A T E C O D E (Y W W )
Y = L A S T D IG IT O F T H E Y E A R
W W = W EEK
312
IN T E R N A T IO N A L XX X X
F7101
R E C T IF IE R W AFER
LOGO LO T CODE
PART NUMBER
TOP (L A S T 4 D IG IT S ) BO TTO M
IRF7105
Tape & Reel Information
SO-8
Dimensions are shown in millimeters (inches)

4.10 (.161) 1.85 (.07 2)

3.90 (.154) 1.65 (.06 5) 0 .35 (.013 )
0 .25 (.010 )
2 .05 (.080 ) 1.60 (.062)
T E R M IN A T IO N
1 .95 (.077 ) 1.50 (.059)
N U M BER 1

5.55 (.218)
1 5.45 (.215) 12.30 (.4 84)
5 .30 (.208) 11.70 (.4 61)
5 .10 (.201)

8.10 (.3 18) 2.6 0 (.102)

F E E D D IR E C T IO N 7.90 (.3 11) 1.5 0 (.059)
2.20 (.0 86)
6 .50 (.255)
2.00 (.0 79)
6 .30 (.248)

13 .20 (.519) 15.40 (.607)

12 .80 (.504) 11.90 (.469)
2

330.00 50.0 0
(13.00 0) (1.969)
M AX. M IN .

18.40 (.7 24)

N O TES: M AX 3
1 C O N F O R M S T O E IA -481-1 14.40 (.5 66)
12.40 (.4 48)
2 IN C LU D E S F LA N G E D IST O R T IO N @ O U T E R E D G E 3
3 D IM E N S IO N S M E A S U R E D @ H U B
4 C O N T R O L LIN G D IM E N S IO N : M E T R IC

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http://www.irf.com/ Data and specifications subject to change without notice. 11/97