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B. Curie temperature
C. Neel temperature
D. Onnes temperature
Answer: Option A
Explanation:
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2. In Fermi-Dirac statistics, the probability of electron occupation of an energy level equal to Fermi
level is
A. 0
B. 0.25
C. 0.5
D. 1
Answer: Option C
Explanation:
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B. h, k, l
C. n, m, l
D. h, n, l
Answer: Option C
Explanation:
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4. The carrier mobility in a semiconductor is 0.4 m2/Vs. Its diffusion constant at 300 K will be (in
m2/s)
A. 0.40
B. 0.16
C. 0.04
D. 0.01
Answer: Option D
Explanation:
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B. Wet air
C. Cotton
D. Paper
Answer: Option B
Explanation:
Cotton and paper have higher dielectric strength than air. Moisture decreases dielectric strength.
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B.
C. T
D. T2
Answer: Option B
Explanation:
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7. The amount of time between the creation and recombination of a free electron and hole is called
A. relaxation time
B. life time
C. lorentz time
D. collision time
Answer: Option B
Explanation:
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8. A photoconductor is a
A. conductor
B. semiconductor
C. insulator
D. superconductor
Answer: Option B
Explanation:
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B. about 100°C
C. about -20°C
D. about 1000 K
Answer: Option D
Explanation:
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C. it is dimensionless
D. the units are farads
Answer: Option C
Explanation:
εr is only a number and does not have any units.
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12. A parallel plate capacitor having C = 200 x 10-12 F has loss dielectric having tan δ = 4 x 10-4. At
an ac voltage of f = 106 Hz and peak value 2 V, the dielectric losses are
A. 10-8 W
B. 10-6 W
C. 10-4 W
D. 10-2 W
Answer: Option B
Explanation:
Dielectric losses = v2 ωC tan δ.
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13. In ferromagnetic materials, the orientation between neighbouring permanent dipoles is parallel.
A. True
B. False
Answer: Option A
Explanation:
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14. Resistivity of copper is lower than that of nickel. When a small percentage of copper is added to
nickel, the resistivity
A. increases
B. decreases
B. False
Answer: Option B
Explanation:
Lines of magnetic field repel each other.
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B. 105°C
C. 120°C
D. 130°C
Answer: Option D
Explanation:
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17. Resistivity of metals consists of two parts, one part constant and the other temperature
dependent.
A. True
B. False
Answer: Option A
Explanation:
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B. 2
C. 1
D. zero
Answer: Option A
Explanation:
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19. Assertion (A): ∈0 has the dimensions of farad per meter.
Reason (R): D = ∈0∈r E.
A. Both A and R are true and R is correct explanation of A
20. When temperature is more than ferromagnetic curie temperature, the behaviour of a
ferromagnetic material is similar to that of paramagnetic material.
A. True
B. False
Answer: Option A
Explanation:
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21. If ω0 is the angular frequency of rotation of electron in the absence of magnetic field, the angular
frequency ω, when a magnetic field B is acting is ω ≅ ω0 + (e/2m)B.
A. True
B. False
Answer: Option A
Explanation:
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B. very low
D. zero
Answer: Option D
Explanation:
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23. Dielectric constant, under the condition of alternating fields, is a complex quantity.
A. True
B. False
Answer: Option A
Explanation:
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24. In an homogeneous dielectric subjected to an electric field E, the dipole moment per unit volume
is ∈0(∈r - 1) E.
A. True
B. False
Answer: Option A
Explanation:
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B. - H
C. - I
D. zero
Answer: Option B
Explanation:
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B. density of holes
B. decreases
D. remains constant
Answer: Option B
Explanation:
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B. self inductance
C. mutual inductance
D. capacitance
Answer: Option C
Explanation:
A high voltage is induced due to mutual inductance because the number of turns in secondary
coil is very high.
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33. Assertion (A): Drift velocity of electrons is proportional to the applied electric field E.
Reason (R): The average drift velocity per unit field is called mobility.
A. Both A and R are true and R is correct explanation of A
34. The materials having low retentivity are suitable for making
A. temporary smagnets
B. weak magnets
C. permanent magnets
35.
B. False
Answer: Option A
Explanation:
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36. Assertion (A): Electron concentration n, hole concentration p and charge concentration ni are
related by ni2 = np.
Reason (R): p type semiconductor is obtained by adding trivalent impurity to intrinsic
semiconductor.
A. Both A and R are true and R is correct explanation of A