FJL6920

FJL6920
High Voltage Color Display Horizontal
Deflection Output
• High Collector-Base Breakdown Voltage : BVCBO = 1700V
• Low Saturation Voltage : VCE(sat) = 3V (Max.)
• For Color Monitor

1 TO-264
1.Base 2.Collector 3.Emitter

NPN Triple Diffused Planar Silicon Transistor

Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol Parameter Rating Units
VCBO Collector-Base Voltage 1700 V
VCEO Collector-Emitter Voltage 800 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current (DC) 20 A
ICP* Collector Current (Pulse) 30 A
PC Collector Dissipation 200 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature -55 ~ 150 °C
* Pulse Test: PW=300µs, duty Cycle=2% Pulsed

Electrical Characteristics TC=25°C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Units
ICES Collector Cut-off Current VCB=1400V, RBE=0 1 mA
ICBO Collector Cut-off Current VCB=800V, IE=0 10 µA
IEBO Emitter Cut-off Current VEB=4V, IC=0 1 mA
BVCBO Collector-Base Breakdown Voltage IC=500µA, IE=0 1700 V
BVCEO Collector-Emitter Breakdown Voltage IC=5mA, IB=0 800 V
BVEBO Emitter-Base Breakdown Voltage IE=500µA, IC=0 6 V
hFE1 DC Current Gain VCE=5V, IC=1A 8
hFE2 VCE=5V, IC=11A 5.5 8.5
VCE(sat) Collector-Emitter Saturation Voltage IC=11A, IB=2.75A 3 V
VBE(sat) Base-Emitter Saturation Voltage IC=11A, IB=2.75A 1.5 V
tSTG* Storage Time VCC=200V, IC=10A, RL=20Ω 3 µs
tF* Fall Time IB1=2.0A, IB2= - 4.0A 0.15 0.2 µs
* Pulse Test: PW=20µs, duty Cycle=1% Pulsed

Thermal Characteristics TC=25°C unless otherwise noted

Symbol Parameter Typ Max Units
RθjC Thermal Resistance, Junction to Case 0.625 °C/W

©2001 Fairchild Semiconductor Corporation Rev. A, May 2001

 FJL6920
Typical Characteristics

16 100
IB=4.0A
VCE = 5V
14
o
IC [A], COLLECTOR CURRENT

o Ta = 25 C
IB=2.0A Ta = 125 C
12

hFE, DC CURRENT GAIN

IB =1.5A
10

o
IB =1.0A Ta = - 25 C
8 10

6
IB=0.5A

4
IB=0.2A
2

0 1
0 2 4 6 8 10 0.1 1 10 100

VCE [V], COLLECTOR-EMITTER VOLTAGE IC [A], COLLECTOR CURRENT

Figure 1. Static Characteristics Figure 2. DC Current Gain

10 10

IC = 3 IB IC = 5 IB
VCE(SAT) [V], SATURATION VOLTAGE
VCE(SAT) [V], SATURATION VOLTAGE

o
Ta = 125 C o
Ta = 125 C
1 1
o
Ta = 25 C
o o
Ta = - 25 C Ta = 25 C

o
0.1 0.1 Ta = - 25 C

0.01 0.01
0.1 1 10 100 0.1 1 10 100

IC [A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT

Figure 3. Collector-Emitter Saturation Voltage Figure 4. Collector-Emitter Saturation Voltage

16 10

VCE = 5V VCC = 200V,

14 IC = 10A, IB1 = 2A
tSTG & tF [µs], SWITCHING TIME
IC [A], COLLECTOR CURRENT

12
tSTG
1
10

6 tF
0.1

2
o o o
125 C 25 C - 25 C
0 0.01
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1 10

VBE [V], BASE-EMITTER VOLTAGE IB2 [A], REVERSE BASE CURRENT

Figure 5. Base-Emitter On Voltage Figure 6. Resistive Load Switching Time

©2001 Fairchild Semiconductor Corporation Rev. A, May 2001

 FJL6920
Typical Characteristics (Continued)

100

VCC = 200V, VCC = 200V,

IC = 10A, IB2 = - 4A 10 IB1 = 2A, IB2 = - 4A
tSTG & tF [µs], SWITCHING TIME

tSTG & tF [µs], SWITCHING TIME

10

tSTG

tSTG
1 1

tF
0.1
tF
0.1

0.01
1 10 1 10

IB1 [A], FORWARD BASE CURRENT IC [A], COLLECTOR CURRENT

Figure 7. Resistive Load Switching Time Figure 8. Resistive Load Switching Time

100 40

IC (Pulse) t = 100ms t = 10ms RB2 = 0, IB1 = 15A

35
t = 1ms VCC = 30V, L = 200µ H
IC [A], COLLECTOR CURRENT

IC [A], COLLECTOR CURRENT

IC (DC)
10 30

25

1 20

15
VBE(off) = -6V
0.1 10
V BE(off) = -3V
o
TC = 25 C 5
Single Pulse
0.01 1
1 10 100 1000 10000 10 100 1000 10000

VCE [V], COLLECTOR-EMITTER VOLTAGE VCE [V], COLLECTOR-EMITTER VOLTAGE

Figure 9. Forward Bias Safe Operating Area Figure 10. Reverse Bias Safe Operating Area

300

250
PC [W], POWER DISSIPATION

200

150

100

50

0
0 25 50 75 100 125 150 175

O
TC [ C], CASE TEMPERATURE

Figure 11. Power Derating

©2001 Fairchild Semiconductor Corporation Rev. A, May 2001

 FJL6920
Package Demensions

TO-264

20.00 ±0.20

6.00 ±0.20
(4.00)
(2.00)
(8.30) (8.30)
(1.00)
(9.00)
(9.00)

(0.50)
(11.00)

(R

ø3.3
2.0

20.00 ±0.20
0)

0 ±0

(R1
.20

.00
1.50 ±0.20

)
(2.00)

(7.00) (7.00)

4.90 ±0.20
2.50 ±0.10

(1.50)
(1.50) (1.50)
20.00 ±0.50

2.50 ±0.20 3.00 ±0.20

+0.25
1.00 –0.10

+0.25
5.45TYP 5.45TYP 0.60 –0.10 2.80 ±0.30
[5.45 ±0.30] [5.45 ±0.30]
5.00 ±0.20
3.50 ±0.20

(0.15)
(2.80)
(1.50)

Dimensions in Millimeters

©2001 Fairchild Semiconductor Corporation Rev. A, May 2001

 TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.

ACEx™ FAST® OPTOPLANAR™ SuperSOT™-3

Bottomless™ FASTr™ PACMAN™ SuperSOT™-6
CoolFET™ FRFET™ POP™ SuperSOT™-8
CROSSVOLT™ GlobalOptoisolator™ PowerTrench® SyncFET™
DenseTrench™ GTO™ QFET™ TinyLogic™
DOME™ HiSeC™ QS™ UHC™
EcoSPARK™ ISOPLANAR™ QT Optoelectronics™ UltraFET®
E2CMOS™ LittleFET™ Quiet Series™ VCX™
EnSigna™ MicroFET™ SLIENT SWITCHER®
FACT™ MICROWIRE™ SMART START™
FACT Quiet Series™ OPTOLOGIC™ Stealth™

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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support
which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be
or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support
when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in significant injury to the user.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

©2001 Fairchild Semiconductor Corporation Rev. H2