Академический Документы
Профессиональный Документы
Культура Документы
www.irf.com 1
08/21/01
IRF150
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
RthJC Junction to Case — — 0.83
°C/W
RthJA Junction to Ambient — — 30 Typical socket mount
2 www.irf.com
IRF150
www.irf.com 3
IRF150
13 a& b
RD
V DS
VGS
D.U.T.
RG
+
-V DD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
VDS
90%
10%
VGS
Fig 9. Maximum Drain Current Vs. td(on) tr t d(off) tf
Case Temperature
Fig 10b. Switching Time Waveforms
www.irf.com 5
IRF150
1 5V
L D R IV E R
VD S
RG D .U .T. +
- VD D
IA S A
VGS
20V
tp 0 .0 1 Ω
V (B R )D S S
tp
IAS
Current Regulator
Fig 12b. Unclamped Inductive Waveforms Same Type as D.U.T.
50KΩ
12V .2µF
QG .3µF
+
10 V V
QGS QGD D.U.T. - DS
VGS
VG
3mA
IG ID
Charge Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit
6 www.irf.com
IRF150
Foot Notes:
➀ Repetitive Rating; Pulse width limited by ➂ ISD ≤ 38A, di/dt ≤300A/µs,
maximum junction temperature. VDD≤ 100V, TJ ≤ 150°C
➁ VDD =50V, starting TJ = 25°C, Suggested RG =2.35 Ω
Peak IL = 38A, VGS =10V ➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 08/01
www.irf.com 7