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Basics of Electronic Engineering Vivek Maik (Email) vivek.maik@alliance.edu.in (Office) 080 30938229 (Mobile) 77608

Basics of Electronic Engineering

Vivek Maik

(Email) vivek.maik@alliance.edu.in (Office) 080 30938229 (Mobile) 77608 77215

College of Engineering and Design Alliance University

Lecture – 14

Oct 8 th , 2012

Alliance University Lecture – 14 Oct 8 t h , 2012 BasicsBasics ofof ElectronicsElectronics

BasicsBasics ofof ElectronicsElectronics EngineeringEngineering

Basics of Electronics Engineering

EC-114, Electronics and Communication Department

EC-114,EC-114, ElectronicsElectronics andand CommunicationCommunication DepartmentDepartment

andand CommunicationCommunication DepartmentDepartment Junction Field Effect Transistor (JFET) A bipolar junction

Junction Field Effect Transistor (JFET)

A bipolar junction transistor (BJT) is

controlled device. i.e. output characteristics of the device are controlled by base current and not base

voltage.

a current

In

characteristics are controlled by input voltage and

not by input current. Voltage controlled device

output

field

effect

transistor

(FET),

the

There

are

two

types

of field effect transistors

(FET’s)

(i)Junction field effect transistor (JFET)

(ii)Metal oxide field effect transistor (MOSFET)

Basics of Electronics Engineering

EC-114, Electronics and Communication Department

i n g EC-114, Electronics and Communication Department Types of Field Effect Transistors n-Channel JFET »
Types of Field Effect Transistors n-Channel JFET » JFET FET p-Channel JFET MOSFET (IGFET) Enhancement
Types of Field Effect Transistors
n-Channel JFET
»
JFET
FET
p-Channel JFET
MOSFET (IGFET)
Enhancement
Depletion
MOSFET
MOSFET
n-Channel
n-Channel
p-Channel
p-Channel
EMOSFET
DMOSFET
DMOSFET
EMOSFET

Basics of Electronics Engineering

EC-114, Electronics and Communication Department

i n g EC-114, Electronics and Communication Department Junction Field Effect Transistor (JFET) A junction field

Junction Field Effect Transistor (JFET)

A junction field effect transistor is a three terminal semiconductor device in which current conduction is by one of the carrier either electrons or holes.

Construction details of a n-channel JFET

electrons or holes. Construction details of a n-channel JFET B a s i c s o

Basics of Electronics Engineering

EC-114, Electronics and Communication Department

Symbol of JFET Drain Gate Source n-channel JFET Gate Drain Source n-channel JFET Offset-gate symbol

Symbol of JFET

Drain Gate Source n-channel JFET
Drain
Gate
Source
n-channel JFET

Gate

Drain

Source

n-channel JFET

Offset-gate symbol

Drain Gate Source p-channel JFET
Drain
Gate
Source
p-channel JFET

Basics of Electronics Engineering

EC-114, Electronics and Communication Department

i n g EC-114, Electronics and Communication Department JFET Biasing N-channel JFET Biasing Circuit. The Gate-Source

JFET Biasing

Electronics and Communication Department JFET Biasing N-channel JFET Biasing Circuit. The Gate-Source region is

N-channel JFET Biasing Circuit.

The Gate-Source region is reverse biased. This means that the device has high input impedance.

The drain is so biased that drain current flows from drain to source.

Since gate current is equal to zero in all JFET’s the drain current is equal to source current. Is = ID

Basics of Electronics Engineering

EC-114, Electronics and Communication Department

i n g EC-114, Electronics and Communication Department Principle and Working of JFET at various GATE

Principle and Working of JFET at various GATE potentials

Principle and Working of JFET at various GATE potentials B a s i c s o

Basics of Electronics Engineering

EC-114, Electronics and Communication Department

i n g EC-114, Electronics and Communication Department Another schematic with color coding Drain N Gate

Another schematic with color coding

Drain N Gate + P P - - N + Source
Drain
N
Gate
+
P
P
-
-
N
+
Source
- +
-
+

Basics of Electronics Engineering

EC-114, Electronics and Communication Department

Output Characteristics Pinch off point At the pinch-off point: Any further increase in V G

Output Characteristics

Output Characteristics Pinch off point At the pinch-off point: Any further increase in V G S
Output Characteristics Pinch off point At the pinch-off point: Any further increase in V G S

Pinch off point

At the pinch-off point:

Any further increase in V GS does not produce any increase in I D .

V DS at pinch-off is denoted as Vp.

ID is at saturation or maximum. It is referred to as I DSS .

The ohmic value of the channel is at maximum

D S S . The ohmic value of the channel is at maximum B a s

Basics of Electronics Engineering

EC-114, Electronics and Communication Department

i n g EC-114, Electronics and Communication Department For different values of V GS Eventually I

For different values of VGS

and Communication Department For different values of V GS Eventually I D will reach 0A. V

Eventually I D will reach 0A. V GS at this point is called V GS(off) .

V GS(off) = Gate Source Cutoff Voltage

Basics of Electronics Engineering

EC-114, Electronics and Communication Department

i n g EC-114, Electronics and Communication Department Trans Conductance Curve The transconductance curve of JFET

Trans Conductance Curve

and Communication Department Trans Conductance Curve The transconductance curve of JFET is the curve between I

The transconductance curve of JFET is the curve between ID and VGS.

Note that current increases faster when VGS approaches zero.

Basics of Electronics Engineering

EC-114, Electronics and Communication Department

i n g EC-114, Electronics and Communication Department Expression for Drain Current B a s i

Expression for Drain Current

and Communication Department Expression for Drain Current B a s i c s o f E
and Communication Department Expression for Drain Current B a s i c s o f E

Basics of Electronics Engineering

EC-114, Electronics and Communication Department

Drain current B a s i c s o f E l e c t

Drain current

Drain current B a s i c s o f E l e c t r
Drain current B a s i c s o f E l e c t r

Basics of Electronics Engineering

EC-114, Electronics and Communication Department

i n g EC-114, Electronics and Communication Department Advantages of JFET (i) It has very high

Advantages of JFET

(i)

It has very high input impedance.

(ii)

JFET has negative temperature coefficient of resistance. This avoids the risk of thermal runaway.

(iii)

JFET has a high power gain. This eliminates the necessity of driver changes.

(iv)

A JFET has a smaller size, longer life and high efficiency.

Basics of Electronics Engineering

EC-114, Electronics and Communication Department

i n g EC-114, Electronics and Communication Department Numerical B a s i c s o

Numerical

EC-114, Electronics and Communication Department Numerical B a s i c s o f E l
EC-114, Electronics and Communication Department Numerical B a s i c s o f E l
EC-114, Electronics and Communication Department Numerical B a s i c s o f E l
EC-114, Electronics and Communication Department Numerical B a s i c s o f E l

Basics of Electronics Engineering

EC-114, Electronics and Communication Department

i n g EC-114, Electronics and Communication Department You should know by now Difference between JFET

You should know by now

Difference between JFET and BJT

Features of JFET

Operating Principles of JFET

Construction of JFET n-channel and p-channel

Drain curves of JFET (output characteristics)

Basics of Electronics Engineering

EC-114, Electronics and Communication Department