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Process Preparation
Open-load RIE etcher for etching thin films of Si, SiO2, and SiNx using SF6, CF4, CHF3, O2, Ar, and N2. Process
conditions are generally between 0-100 mTorr, at a bias power of 0-300 W, at a temperature between
10-50 °C.
Revision 100118B