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BIRLA INSTITUTE OF TECHNOLOGY AND SCIENCE, K.K. BIRLA CAMPUS FIRST SEMESTER 2018-2019

MELG631 Physics and Modeling of Microelectronic Devices

Assignment-3

Due Date: 7 th September 2018 (in class 4pm)

Total =90points

Please indicate clearly what method was used for calculation and clearly explain your thinking, that way partial points may be awarded to you even if the final answer is incorrect. The following physical constants and material properties may be needed to complete this assignment. Please submit original work only DO NOT COPY.

q=1.6x10 -19 C h=6.63x10 -34 J-s k=1.38x10 -23 J/K m 0 (electron)=9.1x10 -31 kg ε 0 =8.85x10 -12 F/m m n-DOS (Si)=1.182 m p-DOS (Si)=0.81 m n-DOS (GaAs)=0.065 m p-DOS (GaAs)=0.524 E G (Si)=1.12eV@300K E G (GaAs)=1.42eV@300K Temperature dependent BG Parameters E G (0) -Si =1.17eV α Si =4.73x10-4 β Si =636 E G (0) -GaAs =1.519eV α GaAs =5.405x10-4 β GaAs =204 μ n (Si)=1350 cm 2 /Vs μ p (Si)= 480 cm 2 /Vs μ n (GaAs)=8500 cm 2 /Vs μ p (GaAs)= 400 cm 2 /Vs

1. Consider a uniformly doped GaAs PN junction with doping concentrations of N a = 5 × 10 18 cm 3 and N d

= 5 × 10 16 cm 3 . Plot the built-in potential barrier V bi versus temperature for 200K < T < 500K. (15 points)

2. The doping concentrations in a silicon pn junction are N d = 5 × 10 15 cm 3 and N a = 10 17 cm 3 . The zero-

bias junction capacitance is C j0 = 0.60 pF. An inductance of 1.50 mH is connected in parallel with the pn

junction. (15 points)

Calculate the resonant frequency fo of the circuit for reverse-bias voltages of

 (a) V R = 1 V, (b) V R = 3 V, and (c) V R = 5 V. 3. The Fig.1 is a plot of steady state carrier concentrations inside a pn junction diode maintained at room

temperature: (15 points)

 (a) Is the diode forward biased or reverse biased? Explain how you arrived at your answer. (b) Do low level injection conditions prevail in the quasi-neutral regions of the diode? Explain how you

arrived at your answer.

 (c) Determine the applied voltage, V A . (d) Determine the hole diffusion length, L p . (e) Determine the total current.

4. The slope of a 1/C 2 versus V plot of Si P+N junction is 2 x 10 23 F -2 V -1 , the intercept is 0.84 V and the

area of the PN junction is 1 μm 2 . Find the lighter doping concentration and the heavier doping concentration. If the intercept data has small experimental error of 60mV, what is the effect on N a and N d ?

(15 points)

5. Design a Si p-n junction to produce particular electron and hole concentrations at given forward bias

voltage at T = 300K. Design the diode such that J n = 20 A/cm 2 and J p = 5 A/cm 2 at V a =0.65 V. Other parameters that can be used are: ni = 1.5 x 10^10 cm^-3, D n = 25cm 2 /s, D p = 10cm 2 /s and τn=τp= 5×10 -7 s.

(15 points)

6. A silicon p-n junction is formed from N material doped with 2.5×10 21 donors/m 3 and P material doped to

have the same impurity density. Assume n i = 1.5×1016 /m 3 and is temperature independent. Find: a) Thermal voltage and barrier voltage at 400C. b) To what temperature would the junction have to be raised in order that the thermal voltage is 30mV? What would be the barrier voltage at this temperature? (15

points)