Lecture 2

20/9/18

Electronics
KIB2002/KUEU2142/KUEP2139
Session 2018/19 Sem 1
Ir. Dr. Ahmad Khairi Abdul Wahab
P. Eng. (BEM), C.Eng.(UK), MIET
Ph.D., M.Eng.Sc.(Malaya), B. (Hons) E.E. Eng.(Cardiff, UK)
Email: khairi@um.edu.my
03-7967 4488

Room A1-5, Block A,

Department of Biomedical Engineering
Faculty of Engineering
DEPARTMENT OF BIOMEDICAL 1
ENGINEERING

Lecture 2: Doping of p-n materials

and p-n junctions

Bridge rectifier IC

Zener diode Plastic cased Stud mount

diodes diode

27-Sep-18 DEPARTMENT OF BIOMEDICAL 2

ENGINEERING

1
Topics to cover
 Semiconductor doping
 Energy band model for doped semiconductors
 Diffusion current
 Carrier concentration

 Electro-static properties of a pn junction

 Terminal I-V characteristics

 Directed readings:- Boylestad, Section 1.5-1.6, pg 7-19

27-Sep-18 DEPARTMENT OF BIOMEDICAL 3

ENGINEERING

27-Sep-18 DEPARTMENT OF BIOMEDICAL 4

ENGINEERING

2
n-type materials
 n-type material is created by introducing
impurity elements that have five valence
electrons (pentavalent), e.g., Antimony,
Arsenic, Phosphorus
 Diffused impurities with five electrons are
donor atoms.

27-Sep-18 DEPARTMENT OF BIOMEDICAL 5

ENGINEERING

27-Sep-18 DEPARTMENT OF BIOMEDICAL 6

ENGINEERING

3
p-type materials
 p-type material is created by introducing
impurity elements that have three valence
electrons (trivalent), e.g., Boron, Gallium and
Indium.
 Diffused impurities with three electrons are
acceptor atoms.

27-Sep-18 DEPARTMENT OF BIOMEDICAL 7

ENGINEERING

27-Sep-18 DEPARTMENT OF BIOMEDICAL 8

ENGINEERING

4
27-Sep-18 DEPARTMENT OF BIOMEDICAL 9
ENGINEERING

27-Sep-18 DEPARTMENT OF BIOMEDICAL 10

ENGINEERING

5
 n-type and p-type materials

n-type p-type
Electrons=Majority Carrier Electrons=Minority Carrier
Hole= Minority Carrier Hole= Majority Carrier

n- and p-type materials = basic building blocks of semiconductor

devices
27-Sep-18 DEPARTMENT OF BIOMEDICAL 11
ENGINEERING

27-Sep-18 DEPARTMENT OF BIOMEDICAL 12

ENGINEERING

6
 p-n junction
 By joining the p-with n-type materials.

27-Sep-18 DEPARTMENT OF BIOMEDICAL 13

ENGINEERING

26/9/18

Metallurgical junction is a plane in the pn junction at

which concentration of acceptors is the same as
concentration of donors.

27-Sep-18 DEPARTMENT OF BIOMEDICAL 14

ENGINEERING

7
27-Sep-18 DEPARTMENT OF BIOMEDICAL 15
ENGINEERING

p n
+ _

VD
ID

27-Sep-18 DEPARTMENT OF BIOMEDICAL 16

ENGINEERING

8
 _ p n
+

VD
IS
27-Sep-18 DEPARTMENT OF BIOMEDICAL 17
ENGINEERING

27-Sep-18 DEPARTMENT OF BIOMEDICAL 18

ENGINEERING

9
27-Sep-18 DEPARTMENT OF BIOMEDICAL 19
ENGINEERING

Example
 Problem: At T=27oC, determine the thermal
voltage, VT.
 Analysis:

T=27 + 273 = 300 K

VT  
 
kT 1.38 10 23 J / K 300 K 
 25 .875 mV
q 1.6 10 19 C

27-Sep-18 DEPARTMENT OF BIOMEDICAL 20

ENGINEERING

10
27-Sep-18 DEPARTMENT OF BIOMEDICAL 21
ENGINEERING

27-Sep-18 DEPARTMENT OF BIOMEDICAL 22

ENGINEERING

11
27-Sep-18 DEPARTMENT OF BIOMEDICAL 23
ENGINEERING

27-Sep-18 DEPARTMENT OF BIOMEDICAL 24

ENGINEERING

12
27-Sep-18 DEPARTMENT OF BIOMEDICAL 25
ENGINEERING

27-Sep-18 DEPARTMENT OF BIOMEDICAL 26

ENGINEERING

13
27-Sep-18 DEPARTMENT OF BIOMEDICAL 27
ENGINEERING

27-Sep-18 DEPARTMENT OF BIOMEDICAL 28

ENGINEERING

14
Knee Voltages of Ge, Si and GaAs

27-Sep-18 DEPARTMENT OF BIOMEDICAL 29

ENGINEERING

15