PD- 94062D

IRF3711
SMPS MOSFET IRF3711S
IRF3711L
Applications HEXFET® Power MOSFET
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification VDSS RDS(on) max ID
for Telecom and Industrial Use 20V 6.0mΩ 110A†
l High Frequency Buck Converters for
Server Processor Power Synchronous FET
l Optimized for Synchronous Buck
Converters Including Capacitive Induced
Turn-on Immunity
Benefits
l Ultra-Low Gate Impedance
TO-220AB D2Pak TO-262
l Very Low RDS(on) at 4.5V VGS
IRF3711 IRF3711S IRF3711L
l Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
Symbol Parameter Max. Units
VDS Drain-Source Voltage 20 V
VGS Gate-to-Source Voltage ± 20 V
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 110†
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 69 A
IDM Pulsed Drain Current 440
PD @TC = 25°C Maximum Power Dissipation 120 W
PD @TA = 25°C Maximum Power Dissipation… 3.1 W
Linear Derating Factor 0.96 W/°C
TJ , TSTG Junction and Storage Temperature Range -55 to + 150 °C

Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case ‡ ––– 1.04
RθCS Case-to-Sink, Flat, Greased Surface „ 0.50 ––– °C/W
RθJA Junction-to-Ambient„‡ ––– 62
RθJA Junction-to-Ambient (PCB mount)…‡ ––– 40

Notes  through ‡ are on page 11

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IRF3711/3711S/3711L
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 20 ––– ––– V VGS = 0V, I D = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.022 ––– V/°C Reference to 25°C, ID = 1mA
––– 4.7 6.0 VGS = 10V, ID = 15A ƒ
RDS(on) Static Drain-to-Source On-Resistance mΩ
––– 6.2 8.5 VGS = 4.5V, ID = 12A ƒ
VGS(th) Gate Threshold Voltage 1.0 ––– 3.0 V VDS = VGS, ID = 250µA
––– ––– 20 VDS = 16V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– 100 VDS = 16V, VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Forward Leakage ––– ––– 200 VGS = 16V
nA
Gate-to-Source Reverse Leakage ––– ––– -200 VGS = -16V

Dynamic @ TJ = 25°C (unless otherwise specified)

Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 53 ––– ––– S VDS = 16V, ID = 30A
Qg Total Gate Charge ––– 29 44 ID = 15A
Qgs Gate-to-Source Charge ––– 7.3 ––– nC VDS = 10V
Qgd Gate-to-Drain ("Miller") Charge ––– 8.9 ––– VGS = 4.5V
Qoss Output Gate Charge ––– 33 ––– VGS = 0V, VDS = 10V
Rg Gate Resistance 0.3 ––– 2.5 Ω
td(on) Turn-On Delay Time ––– 12 ––– VDD = 10V
ns
tr Rise Time ––– 220 ––– ID = 30A
td(off) Turn-Off Delay Time ––– 17 ––– RG = 1.8Ω
tf Fall Time ––– 12 ––– VGS = 4.5V ƒ
Ciss Input Capacitance ––– 2980 ––– VGS = 0V
Coss Output Capacitance ––– 1770 ––– pF VDS = 10V
Crss Reverse Transfer Capacitance ––– 280 ––– ƒ = 1.0MHz

Avalanche Characteristics
Symbol Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy‚ ––– 460 mJ
IAR Avalanche Current ––– 30 A

Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
D
IS Continuous Source Current MOSFET symbol
––– ––– 110†
(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse G

––– ––– 440

(Body Diode)  p-n junction diode. S

––– 0.88 1.3 V TJ = 25°C, IS = 30A, V GS = 0V ƒ

VSD Diode Forward Voltage
––– 0.82 ––– TJ = 125°C, IS = 30A, VGS = 0V ƒ
trr Reverse Recovery Time ––– 50 75 ns TJ = 25°C, IF = 16A, VR=10V
Qrr Reverse Recovery Charge ––– 61 92 nC di/dt = 100A/µs ƒ
trr Reverse Recovery Time ––– 48 72 ns TJ = 125°C, IF = 16A, VR=10V
Qrr Reverse Recovery Charge ––– 65 98 nC di/dt = 100A/µs ƒ
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 IRF3711/3711S/3711L

1000 1000
VGS VGS
TOP 15V TOP 15V
10V 10V
4.5V

I D , Drain-to-Source Current (A)

4.5V
I D , Drain-to-Source Current (A)

3.7V 3.7V
3.5V 3.5V
3.3V 3.3V
3.0V 3.0V
BOTTOM 2.7V BOTTOM 2.7V

100 100

2.7V
2.7V

20µs PULSE WIDTH 20µs PULSE WIDTH

TJ = 25 °C TJ = 150 ° C
10 10
0.1 1 10 100 0.1 1 10 100
VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

1000
2.0
ID = 110A
RDS(on) , Drain-to-Source On Resistance
I D , Drain-to-Source Current (A)

TJ = 25 ° C
1.5

TJ = 150 ° C
(Normalized)

100 1.0

0.5

V DS = 25V
20µs PULSE WIDTH VGS = 10V
10 0.0
2.0 3.0 4.0 5.0 6.0 7.0 8.0 -60 -40 -20 0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature
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IRF3711/3711S/3711L

100000 14
VGS = 0V, f = 1 MHZ ID = 30A
Ciss = Cgs + Cgd, Cds SHORTED
VDS = 16V
VDS = 10V

VGS , Gate-to-Source Voltage (V)

Crss = Cgd 12
Coss = Cds + Cgd
C, Capacitance(pF)

10000 10

Ciss 8
Coss
6
1000

Crss 4

2
100
FOR TEST CIRCUIT
1 10 100 SEE FIGURE 13
0
VDS, Drain-to-Source Voltage (V) 0 20 40 60 80
QG , Total Gate Charge (nC)

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

1000 10000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ISD , Reverse Drain Current (A)

ID, Drain-to-Source Current (A)

100 TJ = 150 ° C 1000

10 100
100µsec
TJ = 25 ° C
1msec
1 10
Tc = 25°C 10msec
Tj = 150°C
V GS = 0 V Single Pulse
0.1 1
0.2 0.8 1.4 2.0 2.6
1 10 100
VSD,Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
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 IRF3711/3711S/3711L

120 RD
V DS
LIMITED BY PACKAGE
VGS
100 D.U.T.
RG
+
ID , Drain Current (A)

-VDD
80
VGS
Pulse Width ≤ 1 µs
60 Duty Factor ≤ 0.1 %

40 Fig 10a. Switching Time Test Circuit

VDS
20
90%

0
25 50 75 100 125 150
TC , Case Temperature ( °C)
10%
VGS
Fig 9. Maximum Drain Current Vs. td(on) tr t d(off) tf
Case Temperature
Fig 10b. Switching Time Waveforms

10
Thermal Response (Z thJC )

1
D = 0.50

0.20
PDM
0.10
0.1
0.05 t1
0.02 SINGLE PULSE t2
0.01 (THERMAL RESPONSE)
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.01
0.00001 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRF3711/3711S/3711L

1400
ID

EAS , Single Pulse Avalanche Energy (mJ)

15V
TOP 13A
1200 19A
DRIVER
BOTTOM 30A
VDS L
1000

RG D.U.T +
V
800
- DD
IAS A
20V
tp 0.01Ω 600

Fig 12a. Unclamped Inductive Test Circuit 400

V(BR)DSS 200

tp
0
25 50 75 100 125 150
Starting TJ , Junction Temperature ( °C)

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current
I AS

Fig 12b. Unclamped Inductive Waveforms

Current Regulator
Same Type as D.U.T.

50KΩ

12V .2µF
QG .3µF

VGS +
V
D.U.T. - DS
QGS QGD
VGS
VG 3mA

IG ID
Charge Current Sampling Resistors

Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit

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 IRF3711/3711S/3711L

Peak Diode Recovery dv/dt Test Circuit

+ Circuit Layout Considerations

D.U.T
• Low Stray Inductance
• Ground Plane
ƒ
• Low Leakage Inductance
Current Transformer
-

+
‚
„
- +
-


RG • dv/dt controlled by RG +
• Driver same type as D.U.T. VDD
-
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test

Driver Gate Drive

P.W.
Period D=
P.W. Period

VGS=10V *

D.U.T. ISD Waveform

Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD

Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent

Ripple ≤ 5% ISD

* VGS = 5V for Logic Level Devices

Fig 14. For N-Channel HEXFET® Power MOSFETs

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IRF3711/3711S/3711L
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)

TO-220AB Part Marking Information

E XAMPL E : T HIS IS AN IR F 1010

L OT CODE 1789
AS S E MB L E D ON WW 19, 1997 INT E R NAT IONAL PAR T NUMB E R
IN T HE AS S E MB L Y L INE "C" RE CT IF IE R
L OGO
Note: "P" in assembly line
position indicates "Lead-Free" DAT E CODE
YEAR 7 = 1997
AS S E MB L Y
L OT CODE WE E K 19
L INE C

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 IRF3711/3711S/3711L
D2Pak Package Outline
Dimensions are shown in millimeters (inches)

D2Pak Part Marking Information

T HIS IS AN IR F530S WIT H PART NUMB E R
L OT CODE 8024 INT ERNAT IONAL
AS S EMB L ED ON WW 02, 2000 R ECT IFIER F530S
IN T HE AS S EMB LY LINE "L " LOGO
DAT E CODE
Note: "P" in ass embly line YEAR 0 = 2000
pos ition indicates "Lead-F ree" AS S E MBL Y
L OT CODE WEE K 02
L INE L

OR
PART NUMBE R
INT E RNAT IONAL
RE CT IF IE R F 530S
LOGO
DAT E CODE
P = DE S IGNAT E S LE AD-F RE E
AS S E MB LY PRODUCT (OPT IONAL)
LOT CODE YE AR 0 = 2000
WEE K 02
A = AS SE MBLY S IT E CODE

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IRF3711/3711S/3711L
TO-262 Package Outline
Dimensions are shown in millimeters (inches)

TO-262 Part Marking Information

E XAMPL E : T HIS IS AN IRL 3103L
L OT CODE 1789 PART NUMB E R
INT E RNAT IONAL
AS S E MB L E D ON WW 19, 1997
RE CT IF IE R
IN T HE AS S E MB L Y L INE "C" L OGO
DAT E CODE
Note: "P" in as s embly line
pos ition indicates "L ead-F ree" YE AR 7 = 1997
AS S E MB L Y
L OT CODE WE E K 19
L INE C

OR
PART NUMB E R
INT E RNAT IONAL
RE CT IF IER
L OGO
DAT E CODE
P = DE S IGNAT E S L E AD-F REE
AS S E MB L Y PRODUCT (OPT IONAL)
L OT CODE YE AR 7 = 1997
WE E K 19
A = AS S E MB L Y S IT E CODE

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 IRF3711/3711S/3711L
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR

1.60 (.063)
1.50 (.059)
1.60 (.063)
4.10 (.161) 1.50 (.059)
3.90 (.153) 0.368 (.0145)
0.342 (.0135)

FEED DIRECTION 1.85 (.073) 11.60 (.457)

1.65 (.065) 11.40 (.449) 24.30 (.957)
15.42 (.609)
23.90 (.941)
15.22 (.601)
TRL
1.75 (.069)
10.90 (.429) 1.25 (.049)
10.70 (.421) 4.72 (.136)
16.10 (.634) 4.52 (.178)
15.90 (.626)

FEED DIRECTION

13.50 (.532) 27.40 (1.079)

12.80 (.504) 23.90 (.941)

330.00 60.00 (2.362)

(14.173) MIN.
MAX.

30.40 (1.197)
NOTES : MAX.
1. COMFORMS TO EIA-418. 26.40 (1.039) 4
2. CONTROLLING DIMENSION: MILLIMETER. 24.40 (.961)
3. DIMENSION MEASURED @ HUB.
3
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
Notes:
 Repetitive rating; pulse width limited by ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%.
max. junction temperature.
„ This is only applied to TO-220AB package
‚ Starting TJ = 25°C, L = 1.0mH
RG = 25Ω, IAS = 30A.
… This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
† Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
‡ Rθ is measured at TJ approximately 90°C
Data and specifications subject to change without notice.
This product has been designed and qualified for the industrial market.
Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.12/04
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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/