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SMD Type MOSFET

MOS Field Effect Transistor


2SK3294

TO-263 Unit: mm

Features 4.57-0.2
+0.2

+0.1
1.27-0.1
1.27-0.1
+0.1

Gate voltage rating 30 V


Low on-state resistance

5.60
+0.2
RDS(on) = 160 m MAX. (VGS = 10 V, ID = 10 A)

8.7-0.2

+0.2
15.25-0.2
1.27-0.1
+0.1 0.1max
Low input capacitance

+0.2
5.28-0.2
Ciss = 1500 pF TYP. (VDS = 10 V, VGS = 0 V)
0.81-0.1
+0.1

+0.2
2.54-0.2
Avalanche capability rated 2.54
1 Gate
2.54-0.2
+0.2
5.08 +0.1
0.4-0.2
+0.2
Built-in gate protection diode -0.1
2 Drain
3 Source
Surface mount device available

Absolute Maximum Ratings Ta = 25


Parameter Symbol Rating Unit
Drain to source voltage VDSS 250 V
Gate to source voltage VGSS 30 V
ID 20 A
Drain current
Idp * 60 A
Power dissipation TC=25 100
PD W
TA=25 1.5
Channel temperature Tch 150
Storage temperature Tstg -55 to +150
* PW 10 s,Duty Cycle 1%

Electrical Characteristics Ta = 25
Parameter Symbol Testconditons Min Typ Max Unit
Drain cut-off current IDSS VDS=250V,VGS=0 100 A
Gate leakage current IGSS VGS= 30V,VDS=0 10 A
Gat cutoff voltage VGS(off) VDS=10V,ID=1mA 2.5 4.5 V
Forward transfer admittance Yfs VDS=10V,ID=10A 6.0 S
Drain to source on-state resistance RDS(on) VGS=10V,ID=10A 120 160 m
Input capacitance Ciss 1500 pF
Output capacitance Coss VDS=10V,VGS=0,f=1MHZ 360 pF
Reverse transfer capacitance Crss 220 pF
Turn-on delay time ton 24 ns
Rise time tr ID=10A,VGS(on)=10V,RG=10 78 ns
Turn-off delay time toff ,VDD=125V 110 ns
Fall time tf 60 ns

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Ordering number:EN3764A

P-Channel Silicon MOSFET

2SJ191

Ultrahigh-Speed Switching Applications

Features Package Dimensions


· Low ON resistance. unit:mm
· Ultrahigh-speed switching. 2083B
· Low-voltage drive.
[2SJ191]
6.5
5.0 2.3

1.5
0.5
4

7.0
5.5
0.85
0.7
1.2

0.8
1.6

7.5
0.6 0.5
1 : Gate
1 2 3
2 : Drain
3 : Source
2.3 2.3 SANYO : TP

unit:mm
2092B
[2SJ191]
6.5 2.3
1.5

5.0 0.5
4
7.0
5.5

1.2

0.85 0.5
2.5

1 2 3
0.8

0.6
1.2
0 to 0.2
1 : Gate
2 : Drain
2.3 2.3 3 : Source
SANYO : TP-FA

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

SANYO Electric Co.,Ltd. Semiconductor Company


TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
40199TH (KT)/42893TH/N1292MH (KOTO) 8-7542, 7921 No.3764–1/4
2SJ191

Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS –60 V
Gate-to-Source Voltage VGSS ±15 V
Drain Current (DC) ID –2 A
Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% –8 A
Allowable Power Dissipation PD Tc=25˚C 20 W
Channel Temperature Tch 150 ˚C
Storage Temperature Tstg –55 to +150 ˚C

Electrical Characteristics at Ta = 25˚C


Ratings
Parameter Symbol Conditions Unit
min typ max
Drain-to-Source Breakdown Voltage V(BR)DSS ID=–1mA, VGS=0 –60 V
Gate-to-Source Breakdown Voltage V(BR)GSS IG=±100µA, VDS=0 ±15 V
Zero-Gate Voltage Drain Current IDSS VDS=–60V, VGS=0 –100 µA
Gate-to-Source Leakage Current IGSS VGS=±12V, VDS=0 ±10 µA
Cutoff Voltage VGS(off) VDS=–10V, ID=–1mA –1.0 –2.0 V
Forward Transfer Admittance | yfs | VDS=–10V, ID=–1A 1.2 2 S
RDS(on) ID=–1A, VGS=–10V 0.35 0.45 Ω
Static Drain-to-Source ON-State Resistance
RDS(on) ID=–1A, VGS=–4V 0.45 0.6 Ω
Input Capacitance Ciss VDS=–20V, f=1MHz 380 pF
Output Capacitance Coss VDS=–20V, f=1MHz 150 pF
Reverse Transfer Capacitance Crss VDS=–20V, f=1MHz 40 pF
Turn-ON Delay Time td(on) See specified Test Circuit 12 ns
Rise Time tr See specified Test Circuit 18 ns
Turn-OFF Delay Time td(off) See specified Test Circuit 85 ns
Fall Time tf See specified Test Circuit 55 ns
Diode Forward Voltage VSD IS=–2A, VGS=0 –1.0 –1.5 V

Switching Time Test Circuit

No.3764–2/4
2SJ191

No.3764–3/4
2SJ191

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of April, 1999. Specifications and information herein are subject to
change without notice.

PS No.3764–4/4