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1
In the production of many microelectronic devices, continuous chemical vapor
deposition (CVD) processes are usedto deposit thin and exceptionally uniform silicon
dioxide films onsilicon wafers. One CVD process involves the reaction between
silane and oxygen at a very low pressure.
SiH4(g) + O2 SiO2(g) + 2H2 (g)
The feed gas, which contains oxygen andsilane in a ratio 8.00 mol O-/mol SiH,,
enters the reactor at 298 K and 3.00 torr absolute. The reaction products emerge at
1375 K and 3.00 torr absolute. Essentially all of the silane in the feed is consumed.
(a)Taking a basis of 1m3 of feed gas, calculate the moles of each component of the
feed and product mixtures and the extent of reaction, £(mol).
(b)Calculate the standard heat ofthe silane oxidation reaction (kJ/mol). Then, taking
the feed and
product species at 298 K (25"C) as references, prepare an inlet-outlet enthalpy table
and calculate and fill in the component amounts (mol) and specific enthalpies
(kJ/mol). (See Example 9.5-1)
Data
Solution
9.12 a.
1 m3 at 298K, 3.00 torr Products at 1375K, 3.00 torr
n0 (mol) n1 (mol O2)
0.111 mol SiH4/mol n2 (mol SiO2)
0.8889 mol O2/mol n3 (mol H2)
SiH 4 ( g) + O 2 ( g) → SiO 2 (s) + 2H 2 (g)
3
Ideal Gas Equation of state : n = 1 m 273 K 3.00 torr 1 mol = 0.1614 mol
o 298 K 760 torr 22.4 ×10-3 m3
ni = nio +ν i ξ
SiH4 : 0=0.1111(0.1614 mol) − ξ ⇒ ξ = 0.0179 mol
H H
ˆ
2 − − 0.0358 3
Table B.8
B
o
=H
O2 (g,1375K): H 1 O2 (1102 C) = 3614. kJ / mol
1375
out in
−7.01 kJ 27.5 m3 1h 1 kW
Q= =−0.0536 kW (transferred from reactor)
m3 h 3600 s 1 kJ/s