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Nanotstructures
Philip Kim
Department of Physics
Columbia University
Graphene : Dirac Particles in 2-dimension
Band structure of graphene
E
hole
Energy
kx'
ky'
electron
ky
kx
+ + ! Spinor
pzA(r)
1
- -
‘B’ sublattice
ei! pzB(r)
Relative amplitude of sublattice wavefunctions
1
k.p perturbation theory
= eik.r
ei! "
!k = tan-1(ky / kx)
DiVincenzo and Mele, PRB (1984); T. Ando, JPSJ (1998);McEuen at al, PRL (1999)
Dirac Fermions in Graphene : “Helicity”
momentum
E pseudo spin E
K’ K
ky
"y "x "y
"x
kx
Single Wall Carbon Nanotube
…. since 1991
Cabon Nanotube Mean Free Path
Room temperature mean free path > 0.2 µm
Modulate Doped GaAs:
Pfeiffer et al.
10
k1D
EF
Pseudo spin
Pd (under HfO2)
SWCNT
(under HfO2)
Pd (over HfO2)
HfO2 on SiO2/Si+
1 µm 20 nm
Pd (under HfO2)
60 nm
1 µm
1.2 nm
0.4 nm
Identifying # of layers
Transport: Novoselov et al, Zhang et al
Raman Spectroscopy: Ferrari et al, Eklund et al,…
0.8 nm
Photoemission: Rotenberg et al, Lanzara et al.
TEM: Meyer et al
STM: Flynn et al, Williams et al, Cromie et al.,…
Transport Single Layer Graphene
5000
~h/4e2
4000
20 µm 3000
Cleaved graphite crystallite
# (")
2000
E
1000
0
-80 -60 -40 -20 0 20 40 60 80
N2D(E) Vg (V)
# -1 = e2vF le N2D
Quantum Hall Effect in Graphene
Novoselov et al, Zhang et al (2005)
1 __
__ h
15
15 6 2 e2
1 __
__ h
Magnetoresistance (k")
2 e2
Hall Resistance (k")
1 __
__ h
10 6 e2
1 __
__ h
10 4
0 0 -5 1 __
__ h
0 2 4 6 8 -10 e2
T=50 mK
1 __
h
B (T) Vg=-2 V -10
__
-6 e2
Quantization: -15
1 __
__ h
-2 e2
-1 1 __
_ e 2 -50 0 50
Rxy = 4 (n + 2 ) Vg (V)
h T= 1.5K, B= 9T
Berry’s Phase and Magnetoresistance Oscillations
Landau orbit near the Fermi level
ky Magnetic flux in cyclotron orbit
Graphene:
&B = &o BF /B
kF &o = h/e
kx E Pseudo Spin
'F = &o kF2 /4(#
$ ~ $% exp[2!(&B/&o)]
B=0
2DEG kx'
ky'
S = h/2
Rxx
! = 2!#
Graphene
$ ~ $% exp[2!(&B/&o) – S! /
1/B
Quantum Hall States
h]
1/BF !#
Room Temperature Quantum Hall Effect
1.02
Rxy (h / 2e2)
1.00
300K
45 T
0.98
2.5 3.0
n (1012 cm-2 )
Deviation < 0.3%
+
_
E1 ~ 100 meV @ 5 T
Novoselov, Jiang, Zhang, Morozov, Stormer, Zeitler, Maan, Boebinger, Kim, and Geim Science (2007)
Conductivity, Mobility, & Mean Free Path
100 e2/h
1000
TC17
Lm (nm)
TC17 TC17
Conductivity
TC145
TC145
TC145
TC130
TC130
TC130
10
0.01 0.1 1 10
Vg (V) n (1012 cm-2) |n| (1012 cm-2)
Graphene Mobility
GaAs HEMT Graphene Mobility
TC12
TC145
TC130
n (1012 cm-2)
Tan et al. PLR (2007)
STM on Graphene
Scattering Mechanism?
•!Ripples
•!Substrate (charge trap)
•!Absorption
Elena Polyakova et al (Columbia Groups), PNAS (2007) •!Structural defects
See also Meyer et al, Nature (2007) and Ishigami et al, Nano Letters (2007)
Toward High Mobility: Suspending Samples
SEM image of suspended graphene
graphene
HF etching
-> critical pointing drying
4 17B S452
T=4K 17B: best unsuspended sample
µ ~ 20,000 cm2/Vsec
3
Resistivity (")
5 µm
1
S452: after current annealing
before annealing
before annealing
onset of SdH
after annealing
unsuspended best
10
) (e2/h)
*WDirac
0
-1 0 1
n (1012 cm-2)
Mobility
Versus
Inhomogeneirty
(unsuspended)
Martin et al. Nature Phys. (2008)
Toward High Mobility Samples
B29.00011 Bolotin et al: Monday
Normalized Resistivity
Mobility VS. Inhomogeneirty
best unsuspended
# (n) / # (n=0)
$WDirac
$WDirac
Suspended samples
n (1010 cm-2)
Engineer Dreams
Theorist Dreams
and
more …
W
W
1 µm
Zigzag ribbons
Egap~ hvF *k ~ hvF/W
10-4
W = 32 nm
Conductance ("-1)
Graphene Ribbon Devices 10-5
10-6
200K
Gold electrode Graphene Dirac Particle Confinement 10-7 100K
10K
1.7K
10-8
0 20 40 60
W Vg (V)
W 10-4
Egap~ hvF / W
Conductance ("-1)
10-5
1 µm
10-6
200K
10 nm < W < 100 nm 10-7
100K
10K
Wide (> 1µm) Graphene 1.7K
W = 53 nm
10-1 10-8
0 20 40 60
Conductivity ("-1)
Vg (V)
Conductance (µS)
10-2
10-4
Conductance ("-1)
10-3 10-5
30mK
Vg = 0 V 4K
T = 300 K 10-4 77K 10-6 200K
290K 100K
10K
10-5 10-7
1.7K
-30 -20 -10 0 10 20 30 W = 75 nm
Ribbon Width (nm) Vg (V) 10-8
0 20 40 60
Vg (V)
Scaling of Energy Gaps in Graphene Nanoribbons
100
Eg (meV)
Eg = E0 /(W-W0)
10 P1
P2
P3
P4
D1
D2
1
0 30 60 90
W (nm) Han, Oezyilmaz, Zhang and Kim PRL (2007)
Top Gated Graphene Nano Constriction
Top gate SEM image of device
drain source
Hf-oxide top gate
drain source
graphene
graphene
1 µm
50
10-1
OFF
25
VBG (V)
10-2
G (e2/h)
0
10-3
10-4 -25
G (e2/h)
10-5 -50
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100
50
Isd (µA)
0
L = 2 µm $Vg = -30 V
W=150 nm -25 V
-20 V
-50 -15 V
-10 V
-5 V
0V
-100
High Current Density: > 108 A/cm2
High mobility: > 10,000 cm2/Vsec -4 -2 0 2 4
Saturation Velocity > 2 X 107cm/sec Vsd (V)
Stanford
Manchester DELFT
Challenges:
•!Better Growth -> higher quality samples
•!Controlled Edges
ETH
Columbia Harvard
Acknowledgement
Special Thanks to: Kim Group: 2007
Yuanbo Zhang (now at Berkeley) Roof top of Pupin Laboratory
Meninder Purewal
Melinda Han
Yuri Zuev
Yue Zhao
Chul Ho Lee
Asher Mullokandov
Dmitri Efetov
Byung Hee Hong
Namdong Kim
Barbaros Oezyilmaz (now at NSU)
Kirill Bolotin
Pablo Jarrilo-Herrero (now at MIT)
Zhigang Jiang
Collaboration:
Stormer, Pinczuk, Heinz, Uemura,
Venkataraman, Nuckolls, Brus, Flynne,
Hone, KS Kim, GC Yi
Funding: