Q1: Briefly describe the principle of MOS transistor.

ANS:

The aim of the MOSTFET is to be able to control the voltage and current
flow between the source and drain. It works almost as a switch. The
working of MOSFET depends upon the MOS capacitor. The MOS capacitor
is the main part of MOSFET. The semiconductor surface at the below oxide
layer which is located between source and drain terminal. It can
be inverted from p-type to n-type by applying a positive or negative gate
voltages respectively. When we apply the positive gate voltage the holes
present under the oxide layer with a repulsive force and holes are pushed
downward with the substrate. The depletion region populated by the bound
negative charges which are associated with the acceptor atoms. The
electrons reach channel is formed. The positive voltage also attracts
electrons from the n+ source and drain regions into the channel. Now, if a
voltage is applied between the drain and source, the current flows freely
between the source and drain and the gate voltage controls the electrons in
the channel. Instead of positive voltage if we apply negative voltage , a hole
channel will be formed under the oxide layer.
Q4:what do you know about CMOS and NMOS.Which is
preferable for VLSI design?why?
ANS:

N-type metal-oxide-semiconductor logic uses n-type field effect

transistors (MOSFETs) to implement logic gates and other digital circuits.

Two important characteristics of CMOS devices are high noise

immunity and low static power consumption.[3] Since one transistor of the
pair is always off, the series combination draws significant power only
momentarily during switching between on and off states. Consequently,
CMOS devices do not produce as much waste heat as other forms of logic.
On the other hand N-type metal-oxide-semiconductor logic (NMOS) logic,
which normally have some standing current even when not changing state.
CMOS also allows a high density of logic functions on a chip. It was
primarily for this reason that CMOS became the most used technology to
be implemented in Very-large-scale integration (VLSI) chips.

Q5: With appropriate example discuss the supremacy

of MOS over BJT.
Ans:

1) INPUT IMPEDANCE:
MOSFETs have higher input impedance than BJTs. Therefore MOSFETs
are more widely used in the input stage of voltage amplifiers.
2) SIZE:
MOSFETs can be made much smaller than BJTs. Many more MOSFETs
can be placed in a smaller area than BJTs. MOSFETs are also easier to
manufacture than BJTs because they take fewer steps to make.
3) NOISE:
MOSFETs are less noisy than BJTs. In an electronics context noise refers
to random interference in a signal. BJTs generally introduce more noise
into the signal than MOSFETs. This means MOSFETs are more suitable
for signal processing applications or for voltage amplifiers.
THERMAL RUNAWAY:
BJTs suffer from a property known as "thermal runaway." This can damage
the BJT and makes designing circuits for BJTs more difficult. MOSFETs do
not suffer from thermal runaway.
Q: express the basic dc equation for nmos transistor

Fig. 4.8 NMOS transistor with a VG S>VTH, and VD S>0.

where N is the total number of electron composing the channel charge, q is the
electron charge, and td is the drift time required to cross the channel by an electron.
Qch is modulated by the VGS voltage that exceeds the threshold voltage, VTH, i.e.
VGS‐VTH which is called the overdrive voltage. . Qch can be calculated as
follows:

where L and W are the channel length and width, respectively, and Cox is the Gate
capacitance per unit area. Cox is given by the ratio between the permectivity,
εox, and thickness, tox, of the silicon dioxide:
In standard CMOS technologies of the last twenty years tox is about fifty times
lower than the minimum channel length Lmin:

Drift time, td, is directly proportional to the channel length L, and inversely
proportional to the drift velocity of electrons, vd, as equation 4.3 shows:

Drift velocity, vd, is proportional to the horizontal electric field, εy, i.e.:

where µn is the electron mobility in the channel. The value of the horizontal
electric field, εy, is, approximately, calculated as follows:

Substituting equations 4.2, 4.3, 4.4, and 4.5, into equation 4.1 the following
expression for IDS is get:

Q9: Draw the transfer characteristics of CMOS