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0, May 2005
Automotive MOSFETs in
Linear Applications:
Thermal Instability
by Peter H. Wilson
Automotive Power
an excellent semiconductor switch. When the exceeds the device threshold voltage. This can
MOSFET transitions through the linear mode of not be neglected for applications that fall within
operation (see Figure 3), the gate voltages can the “linear mode” of operation as in Figure 3.
be typically just above the threshold, VGS(th) The circuit designer must give some attention to
value. While operating in this mode, the selection of the MOSFET when operating in this
channel resistance will be much greater than area.
the data sheet RDS(on) rating (usually rated at
VGS=10V) and the resulting drain voltage will
modulate between the supply voltage and
ground (see Figure 3).
∂I D
g fs =
∂V
GS VDS = cons tan t
For α < 0 a hotter “cell” will carry less current Hot spotting can begin with a constant VGS
and is cooler, which leads to thermal across the die and a small group of cells that
stabilisation. are hotter than their neighbors. Below the zero
temperature coefficient point these cells due the
transfer characteristic begin to take more
The SOA graph from SPP_B_I80N06S-08 data current compared with other cells. This will
sheet describes the boundary conditions of safe further increase the temperature. As shown in
operation. Between the boundary conditions Figure 5, this mechanism is regenerative and
exists a set of sloping lines that show SOA has the potential of leading to intrinsic thermal
limitations as a function of a time. These lines runaway within the MOSFET. Thus, under the
are “constant” power lines representing the right combination of conditions a catastrophic
power it takes to raise the device junction device failure can result. Hot spotting can
temperature to maximum rated junction possible occur due to imperfections in the die
4. Conclusion
There are four points which can influence a
MOSFET’s susceptibility to the hot spotting
phenomenon.
Reference
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