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SHINDENGEN

HVX-2 Series Power MOSFET N-Channel Enhancement type

2SK2671 OUTLINE DIMENSIONS


Case : FTO-220
(Unit : mm)
( F5F90HVX2 )
900V 5A
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FEATURES
● Input capacitance (Ciss) is small.
Especially, input capacitance
at 0 biass is small.
● The static Rds(on) is small.
● The switching time is fast.
● Avalanche resistance guaranteed.

APPLICATION
● Switching power supply of AC 240V input
● High voltage power supply
● Inverter

RATINGS
●Absolute Maximum Ratings (Tc = 25℃)
Item Symbol Conditions Ratings Unit
Storage Temperature Tstg -55∼150 ℃
Channel Temperature Tch 150
Drain-Source Voltage VDSS 900 V
Gate-Source Voltage VGSS ±30
Continuous Drain Current(DC) ID 5
Continuous Drain Current(Peak) IDP Pulse width≦10μs, Duty cycle≦1/100 10 A
Continuous Source Current(DC) IS 5
Total Power Dissipation PT 40 W
Repetitive Avalanche Current IAR Tch = 150℃ 5 A
Single Avalanche Energy EAS Tch = 25℃ 100 mJ
Repetitive Avalanche Energy EAR Tch = 25℃ 10
Dielectric Strength Vdis Terminals to case, AC 1 minute 2 kV
Mounting Torque TOR (Recommended torque :0.3 N・m ) 0.5 N・m

Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd


HVX-2 Series Power MOSFET 2SK2671 ( F5F90HVX2 )

●Electrical Characteristics Tc = 25℃


Item Symbol Conditions Min. Typ. Max. Unit
Drain-Source Breakdown Voltage V(BR)DSS ID = 1mA, VGS = 0V 900 V
Zero Gate Voltage Drain Current IDSS VDS = 900V, VGS = 0V 250 μA
Gate-Source Leakage Current IGSS VGS = ±30V, VDS = 0V ±0.1
Forward Transconductance gfs ID = 2.5A, VDS = 10V 2.4 4.0 S
Static Drain-Source On-state Resistance RDS(ON) ID = 2.5A, VGS = 10V 2.1 2.8 Ω
Gate Threshold Voltage VTH ID = 1mA, VDS = 10V 2.5 3.0 3.5 V
Source-Drain Diode Forward Voltage VSD IS = 2.5A, VGS = 0V 1.5
Thermal Resistance θjc junction to case 3.12 ℃/W
Total Gate
www.DataSheet4U.com Charge Qg VDD = 400V, VGS = 10V, ID = 5A 45 nC
Input Capacitance Ciss 1140
Reverse Transfer Capacitance Crss VDS = 25V, VGS = 0V, f = 1MHZ 23 pF
Output Capacitance Coss 105
Turn-On Time ton ID = 2.5A, RL = 60Ω, VGS = 10V 55 100 ns
Turn-Off Time toff 210 350

Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd


2SK2671 Transfer Characteristics
10
www.DataSheet4U.com Tc = −55°C
25°C

8
Drain Current ID [A]

6 100°C

150°C
4

VDS = 25V
TYP
0
0 5 10 15 20

Gate-Source Voltage VGS [V]


2SK2671 Static Drain-Source On-state Resistance
100

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Static Drain-Source On-state Resistance RDS(ON) [Ω]

10

ID = 2.5A

VGS = 10V
pulse test
TYP
0.1
-50 0 50 100 150
Case Temperature Tc [°C]
2SK2671 Gate Threshold Voltage
6
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5
Gate Threshold Voltage VTH [V]

1
VDS = 10V
ID = 1mA
TYP
0
-50 0 50 100 150

Case Temperature Tc [°C]


2SK2671 Safe Operating Area
10

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100µs

200µs

1
Drain Current ID [A]

R DS(ON) 1ms
limit

10ms
0.1

DC

Tc = 25°C
Single Pulse

0.01
1 10 100 1000
Drain-Source Voltage VDS [V]
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2SK2671 Transient Thermal Impedance

10

0.1

Transient Thermal Impedance θjc(t) [°C/W]


0.01
10-4 10-3 10-2 10-1 100 101 102

Time t [s]
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2SK2671 Single Avalanche Energy Derating


100
Single Avalanche Energy Derating [%]

80

60

40

20

0
0 50 100 150
Starting Channel Temperature Tch [°C]
2SK2671 Capacitance
10000

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Ciss
1000
Capacitance Ciss Coss Crss [pF]

Coss
100

Crss

10

f=1MHz
Ta=25°C
TYP
1
0 20 40 60 80 100

Drain-Source Voltage VDS [V]


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2SK2671 Single Avalanche Current - Inductive Load

10
VDD = 100V
VGS = 15V → 0V
Rg = 60Ω
IAS = 5A

EAR = 10mJ EAS = 100mJ

Single Avalanche Current IAS [A]


1
0.1 1 10 100

Inductance L [mH]
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2SK2671 Power Derating


100

80
Power Derating [%]

60

40

20

0
0 50 100 150
Case Temperature Tc [°C]
2SK2671 Gate Charge Characteristics
www.DataSheet4U.com 500 20

VDS
400
Drain-Source Voltage VDS [V]

Gate-Source Voltage VGS [V]


VGS 15
VDD = 400V
200V
300
100V

10

200

5
100
ID = 5A
TYP

0 0
0 20 40 60 80 100

Gate Charge Qg [nC]