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Shihyun Ahn, Fan Ren, Janghyuk Kim, Sooyeoun Oh, Jihyun Kim, Michael A. Mastro, and S. J. Pearton
Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal -Ga2O3 (010) substrates
Applied Physics Letters 100, 013504 (2012); 10.1063/1.3674287
There is a significant current interest in the use of two- material.20,21 Indeed, back-gated transistors fabricated on
dimensional (2D) semiconductors for electronic devices 200 nm thick exfoliated Ga2O3 nanobelts have been shown
capable of high speed or low power operation. Graphene to exhibit very good dc performance up to 250 C, with well-
is the most widely studied of these materials,1,2 but the behaved saturation and transconductance characteristics,
absence of a band gap under most conditions makes it diffi- high on-off ratios, and stable operation in air.22 In the work
cult to realize conventional channel-layer devices such as by Kim et al.,22 the materials characteristics of the exfoliated
field-effect transistors (FETs).1–3 Alternatives include the material were examined by Raman spectroscopy and atomic
transition metal dichalcogenides (TMDs) WSe2 (Ref. 4) and force microscopy, and the high temperature (200 C) charac-
MoS2 (Ref. 5) because they generally possess a non-zero teristics of conventional back-gated FETs were tested.
bandgap in 2D form, even though it is typically 1 eV.6–13 Hwang et al.23 used what they termed nanomembranes of
This small band-gap limits their ability to be used in high 20–100 nm thickness obtained by mechanical exfoliation
power applications. from bulk Ga2O3 crystals and transferred these onto a back-
The b-phase of Ga2O3 is a thermally and chemically sta- gated Si substrate to demonstrate promising FET perfor-
ble semiconductor with a bandgap of 4.9 eV (Refs. 12 and mance with gate modulation ratio of 107 at a drain voltage
13) and it is attracting interest for use in both electronics for of 20 V, field-effect mobility of 70 cm2/Vs, and a sub-
high power switching and in truly solar-blind UV photode- threshold swing of 200 mV/dec.22
tectors. Of course, some of the new-found enthusiasm for the There are still many questions to explore to establish the
material must be tempered by the fact that oxides typically potential of Ga2O3 for power electronics in near 2D form of
have poor thermal conductivities and also that their electrical the type envisaged for the more studied materials,24–28 such
properties can be dominated by native defects. However, the as the influence of Ga2O3 thickness and doping (Sn and Si for
fact remains that Ga2O3 has a very high theoretical break- n-type, Mg for p-type) on device performance since we might
down electric field (8 MV/cm),14 making it of interest for expect that devices based on thinner b-Ga2O3 flakes would
high power electronics. Indeed, a recent report demonstrated achieve higher on/off ratio but produce lower power opera-
a 3.8 MV/cm breakdown field in Ga2O3 which surpassed the tion. The effect of surface states would play an important role
bulk critical field strengths of GaN and SiC.15 There have in ultra-thin b-Ga2O3 based devices due to increased carrier
been a number of reports of transistor structures, including scattering.28 The dependence of modulation of the transistor
metal-semiconductor field-effect transistors (MESFETs), channel on the type of gating is also of interest. The use of
depletion-mode metal-oxide-semiconductor field-effect tran- nanobelts does offer the ability to tailor the thermal properties
sistors (MOSFETs), and Schottky diodes16–19 fabricated on through the choice of substrate onto which they are trans-
either bulk or thin film b-Ga2O3. In analogy with the 2D ferred and currently there is limited availability of epitaxial
materials mentioned earlier, as well as single layers of black sources on semi-insulating substrates. The use of top-gated
phosphorus, the monoclinic structure of bulk b-Ga2O3 crys- transistor geometries on these nanobelt devices is preferred
tals should allow cleavage into ultra-thin flakes in the (100) because the thinner gate dielectric allows the use of a lower
direction even though b-Ga2O3 is not a van der Waals 2D gate voltage to achieve the same electric field strength, and a
FIG. 5. (Top) Gate voltage dependent drain current and gate leakage current
of b-Ga2O3 flake FET with front, back, and both gates. (Bottom) Gate I–V
FIG. 3. Drain I–V of b-Ga2O3 flake based FET with front, back, and both characteristics of b-Ga2O3 flake based device with front, back, and both
gates at 25 C. gates.
062102-4 Ahn et al. Appl. Phys. Lett. 109, 062102 (2016)