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TLP281, TLP281-4
PROGRAMMABLE CONTROLLERS Unit: mm
AC/DC-INPUT MODULE
PC CARD MODEM(PCMCIA)
TLP281 TLP281-4
1 4 1 16
2 3 2 15
1:ANODE 3 14
2:CATHODE
3:EMITTER 4 13
4:COLLECTOR
5 12
TOSHIBA 11-10F1
6 11 Weight: 0.19 g (typ.)
7 10
8 9
1,3,5,7 :ANODE
2,4,6,8 :CATHODE
9,11,13,15 :EMITTER
10,12,14,16 :COLLECTOR Start of commercial production
1996-03
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Current Transfer Ratio
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Absolute Maximum Ratings (Ta = 25°C)
RATING
CHARACTERISTIC SYMBOL UNIT
TLP281 TLP281-4
Forward Current IF 50 mA
Forward Current Derating ∆IF/°C -0.7 (Ta≥53°C) -0.5 (Ta≥25°C) mA/°C
Pulse Forward Current
IFP 1 A
(100 μs pulse, 100 pps)
LED
Reverse Voltage VR 5 V
Diode power dissipation PD 100 70 mW
Diode power dissipation derating ∆PD/°C -1.39 (Ta≥53°C) -0.7 (Ta≥25°C) mW/°C
Collector Current IC 50 mA
Collector Power Dissipation
PC 150 100 mW
(1 Circuit)
Collector Power Dissipation
∆PC/°C -1.5 -1.0 mW/°C
Derating(Ta≥25°C) (1 Circuit)
Junction Temperature Tj 125 °C
Operating Temperature Range Topr -55 to 100 °C
Storage Temperature Range Tstg -55 to 125 °C
Lead Soldering Temperature (10 s) Tsol 260 °C
Total Package Power Dissipation
PT 200 170 mW
(1 Circuit)
Total Package Power Dissipation
∆PT/°C -2.0 -1.7 mW/°C
Derating (Ta≥25°C) (1 Circuit)
Isolation Voltage
BVS 2500 Vrms
(AC, 60 s, R.H.≤ 60%) (Note 1)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Device considered a two terminal device : LED side pins shorted together and DETECTOR side pins shorted
together.
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Electrical Characteristics (Ta = 25°C)
Reverse Current IR VR = 5 V — — 10 μA
Capacitance CT V = 0 V, f = 1 MHz — 30 — pF
Collector-Emitter Breakdown Voltage V(BR) CEO IC = 0.5 mA 80 — — V
Emitter-Collector Breakdown Voltage V(BR) ECO IE = 0.1 mA 7 — — V
DETECTOR
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Capacitance
CS VS = 0 V, f = 1 MHz — 0.8 — pF
(Input to Output)
Isolation Resistance RS VS = 500 V, R.H. ≤ 60% 5×1010 1014 — Ω
AC, 60 s 2500 — —
Vrms
Isolation Voltage BVS AC, 1 s, in oil — 5000 —
DC, 60 s, in oil — 5000 — Vdc
Rise Time tr — 2 —
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TLP281
TLP281 TLP281-4
TLP281-4
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IC / IF – IF
1000
VCE = 10V
Current transfer ratio
VCE = 5V Sample A
IC / IF (%)
VCE = 0.4V
100
Sample B
10
0.1 1 10 100
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