Академический Документы
Профессиональный Документы
Культура Документы
(OLET)
Alvin Fariz1 10215072 – Group 5
Group members : Rheza Pahlevi 10213045, Prayoga Anugerah 10214075, Perystito 10215033,
Enggar Lokheswara 10215088, Genadi Julfianto 10216049.
Department of Physics, Faculty of Mathematics and Natural Sciences Institut Teknologi Bandung,
Indonesia.
Email : 1alvin.fariz@s.itb.ac.id
Abstract
The potential of organic semiconductor-based devices for light generation has already been demonstrated by the
commercialization of display technologies based on organic LEDs (OLEDs). In terms of performance and
reliability, the OLED is by far the most developed organic technology. However, at high current densities, OLEDs
are susceptible to considerable exciton quenching, which decreases their efficiency. Organic light-emitting
transistor (OLET) is a transistor that emits light. OLETs represent a novel class of organic devices that combine
the current-modulating function of a transistor with light emission, and also offer efficiency increases. In this
paper we will discuss the first trilayer hetero structure approach for OLETs enabling simultaneous control of
electrode-induced photon losses, and exciton–metal and exciton–charge interactions. These devices are >100
times more efficient than the equivalent OLED, >2 times more efficient than the optimized OLED with the same
emitting layer and >10 times more efficient than any other reported OLETs.
IV. Conclusion
I have shown the advantages of using an
OLET versus an OLED configuration, and
enabled OLETs with the highest efficiency
reported so far. These devices are >100 times
more efficient than the equivalent OLED, >2×
more efficient than the optimized OLED with
the same emitting layer and >10 times more
efficient than any other reported OLETs. The
new trilayer heterostructure field-effect concept
unravels the full potential of the light-emitting
field-effect technology and restricts the
limitation of OLEDs to only materials-related
issues. Improvements in the top-layer field-
effect mobility at high current density coupled
to the use of triplet emitters will enable OLETs
with even higher EQE and brightness. OLETs
also offer an easily processed device
architecture that naturally avoids pinholes and
shorts between injection contacts, which are
among the main technological problems faced
by OLEDs.
V. Acknowledgement
I would like to like to show my gratitude
to my supervisor, Prof. Dr. Toto Winata, who
guide me for this paper. To the author of the
papers that I use as references. I also thank to
my partners group for their comments on an
earlier version so I can make the content of the
paper better.
VI. References
[1] C.D. Dimitrakopoulos, P.R.L.
Malenfant, Adv. Mater. 14 (2002)
99.
[2] M. Muccini, A bright future for
organic field-effect transistors, Nat.
Mater. 5, p. 605, 2006.
[3] M. Melucci, L. Favaretto, M.
Zambianchi, M. Durso, M. Gazzano,
A. Zanelli, M. Monari, et al.,
Molecular tailoring of new
thieno(bis)imide-based
semiconductors for single layer
ambipolar light emitting transistors,
Chem. Mater. 25, p. 668, 2013.
[4] R. Capelli, S. Toffanin, G. Generali,
H. Usta, A. Facchetti, and M.
Muccini, Organic light-emitting
transistors with an efficiency that
outperforms the equivalent light-
emitting diodes, Nat. Mater. 9, p.
496, 2010.