BUZ 80A

SIPMOS ® Power Transistor

• N channel
• Enhancement mode

Pin 1 Pin 2 Pin 3

G D S

Type VDS ID RDS(on) Package Ordering Code

BUZ 80A 800 V 3A 3Ω TO-220 AB C67078-A1309-A3

Maximum Ratings
Parameter Symbol Values Unit
Drain source voltage VDS 800 V
Drain-gate voltage VDGR
RGS = 20 kΩ 800
Continuous drain current ID A
TC = 50 °C 3
Pulsed drain current IDpuls
TC = 25 °C 12
Gate source voltage VGS ± 20 V
Power dissipation Ptot W
TC = 25 °C 75
Operating temperature Tj -55 ... ...+ 150 °C
Storage temperature Tstg -55 ... ...+ 150
Thermal resistance, chip case RthJC ≤ 1.67 K/W
Thermal resistance, chip to ambient RthJA 75
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55 / 150 / 56

Semiconductor Group 1 07/96

 BUZ 80A

Electrical Characteristics, at Tj = 25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Static Characteristics
Drain- source breakdown voltage V(BR)DSS V
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C 800 - -
Gate threshold voltage VGS(th)
VGS=VDS, ID = 1 mA 2.1 3 4
Zero gate voltage drain current IDSS µA
VDS = 800 V, VGS = 0 V, Tj = 25 °C - 20 250
VDS = 800 V, VGS = 0 V, Tj = 125 °C - 100 1000
Gate-source leakage current IGSS nA
VGS = 20 V, VDS = 0 V - 10 100
Drain-Source on-resistance RDS(on) Ω
VGS = 10 V, ID = 1.5 A - 2.7 3

Semiconductor Group 2 07/96

 BUZ 80A

Electrical Characteristics, at Tj = 25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Dynamic Characteristics
Transconductance gfs S
VDS≥ 2 * ID * RDS(on)max, ID = 1.5 A 1 1.8 -
Input capacitance Ciss pF
VGS = 0 V, VDS = 25 V, f = 1 MHz - 1600 2100
Output capacitance Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz - 90 150
Reverse transfer capacitance Crss
VGS = 0 V, VDS = 25 V, f = 1 MHz - 30 55
Turn-on delay time td(on) ns
VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50 Ω - 30 45
Rise time tr
VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50 Ω - 40 60
Turn-off delay time td(off)
VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50 Ω - 110 140
Fall time tf
VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50 Ω - 60 80

Semiconductor Group 3 07/96

 BUZ 80A

Electrical Characteristics, at Tj = 25°C, unless otherwise specified

Parameter Symbol Values Unit
min. typ. max.

Reverse Diode
Inverse diode continuous forward current IS A
TC = 25 °C - - 3
Inverse diode direct current,pulsed ISM
TC = 25 °C - - 12
Inverse diode forward voltage VSD V
VGS = 0 V, IF = 6 A - 1.05 1.3
Reverse recovery time trr µs
VR = 100 V, IF=lS, diF/dt = 100 A/µs - 1.8 -
Reverse recovery charge Qrr µC
VR = 100 V, IF=lS, diF/dt = 100 A/µs - 12 -

Semiconductor Group 4 07/96

 BUZ 80A

Power dissipation Drain current

Ptot = ƒ(TC) ID = ƒ(TC)
parameter: VGS ≥ 10 V

80 3.2

W A

Ptot ID
60 2.4

50 2.0

40 1.6

30 1.2

20 0.8

10 0.4

0 0.0
0 20 40 60 80 100 120 °C 160 0 20 40 60 80 100 120 °C 160
TC TC

Safe operating area Transient thermal impedance

ID = ƒ(VDS) Zth JC = ƒ(tp)
parameter: D = 0.01, TC = 25°C parameter: D = tp / T

10 2 10 1

A K/W

t = 670.0ns
p
ID ZthJC
10 1 1 µs 10 0

10 µs
I
D
/
DS

V 100 µs
=

10 0 10 -1
n)
(o

D = 0.50
DS

R
1 ms
0.20

10 ms
0.10
0.05
10 -1 10 -2
DC single pulse 0.02
0.01

10 -2 10 -3
0 1 2 3 -7 -6 -5 -4 -3 -2 -1 0
10 10 10 V 10 10 10 10 10 10 10 10 s 10
VDS tp

Semiconductor Group 5 07/96

 BUZ 80A

Typ. output characteristics Typ. drain-source on-resistance

ID = ƒ(VDS) RDS (on) = ƒ(ID)
parameter: tp = 80 µs parameter: VGS

7.0 10
Ptot = 75W
A l
kj i h g
Ω a b c d e
6.0 VGS [V]
ID f a 4.0 RDS (on) 8
5.5
b 4.5
5.0 c 5.0 7
e
4.5 d 5.5
e 6.0 6
4.0
f 6.5
3.5 g 7.0 5
d
h 7.5
3.0 f
i 8.0 4
g
2.5 j 9.0 h
k 10.0 3 j i
2.0 c
k
l 20.0
1.5 2
b
1.0 VGS [V] =
1 a b c d e f g h i j k
0.5 4.5
4.0 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0
a
0.0 0
0 5 10 15 20 25 30 35 V 45 0.0 1.0 2.0 3.0 4.0 5.0 A 6.5
VDS ID

Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID)

parameter: tp = 80 µs parameter: tp = 80 µs,
VDS≥2 x ID x RDS(on)max VDS≥2 x ID x RDS(on)max

5.0 3.0

S
ID 4.0 gfs

3.5
2.0
3.0

2.5 1.5

2.0

1.0
1.5

1.0
0.5
0.5

0.0 0.0
0 1 2 3 4 5 6 7 8 V 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 A 4.0
VGS ID

Semiconductor Group 6 07/96

 BUZ 80A

Drain-source on-resistance Gate threshold voltage

RDS (on) = ƒ(Tj ) VGS (th) = ƒ(Tj)
parameter: ID = 1.5 A, VGS = 10 V parameter: VGS = VDS, ID = 1 mA

14 4.6

Ω V 98%
4.0
12
RDS (on) 11 VGS(th)
3.6

10 3.2 typ
9
2.8
8
2.4 2%
7

6 2.0

5 98% 1.6
typ
4 1.2
3
0.8
2
0.4
1
0 0.0
-60 -20 20 60 100 °C 160 -60 -20 20 60 100 °C 160
Tj Tj

Typ. capacitances Forward characteristics of reverse diode

C = f (VDS) IF = ƒ(VSD)
parameter:VGS = 0V, f = 1MHz parameter: Tj , tp = 80 µs

10 1 10 2

nF A
C IF

Ciss
10 0 10 1

10 -1 10 0
Coss Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Crss
Tj = 150 °C (98%)

10 -2 10 -1
0 5 10 15 20 25 30 V 40 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0
VDS VSD

Semiconductor Group 7 07/96

 BUZ 80A

Drain-source breakdown voltage Typ. gate charge

V(BR)DSS = ƒ(Tj ) VGS = ƒ(QGate)
parameter: ID puls = 5 A

960 16

V
V
920
V(BR)DSS VGS
900 12

880
10
860
0,2 VDS max 0,8 VDS max
840 8

820
6
800

780 4

760
2
740
720 0
-60 -20 20 60 100 °C 160 0 10 20 30 40 50 nC 65
Tj Q Gate

Semiconductor Group 8 07/96

 BUZ 80A

Package Outlines
TO-220 AB
Dimension in mm

Semiconductor Group 9 07/96