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AO4407A P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4407A/L uses advanced

AO4407A

P-Channel Enhancement Mode Field Effect Transistor

AO4407A P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4407A/L uses advanced

General Description

Features

The AO4407A/L uses advanced trench technology to provide excellent R DS(ON) , and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. AO4407A and AO4407AL are electrically identical. -RoHS Compliant -AO4407AL is Halogen Free

V DS = -30V I D = -12A

(V GS = -20V)

R DS(ON) < 11m(V GS = -20V) R DS(ON) < 13m(V GS = -10V) R DS(ON) < 38m(V GS = -5V)

UIS TESTED! RG, CISS, COSS, CRSS TESTED!

S

S

S

G

SOIC-8

Top View

< 38m Ω (V G S = -5V) UIS TESTED! RG, CISS, COSS, CRSS TESTED! S

D

D

D

D

D G S
D
G
S

Absolute Maximum Ratings T A =25°C unless otherwise noted

Parameter

Symbol

Maximum

Drain-Source Voltage

V DS

Gate-Source Voltage

V GS

Continuous Drain

T

A =25°C

Current A

T

A =70°C

I

D

-30

±25

-12

-10

Pulsed Drain Current B

I DM

-60

Avalanche Current G

Repetitive avalanche energy L=0.3mH G

Power Dissipation A

T

T

A =25°C

A =70°C

Junction and Storage Temperature Range

I AR

E AR

P D

T J , T STG

-26

101

3.1

-55 to 150

I AR E AR P D T J , T STG -26 101 3.1 -55 to
I AR E AR P D T J , T STG -26 101 3.1 -55 to

Units

V

V

A

mJ

W

°C

I AR E AR P D T J , T STG -26 101 3.1 -55 to
I AR E AR P D T J , T STG -26 101 3.1 -55 to
2.0

2.0

Thermal Characteristics

Thermal Characteristics

Parameter

Symbol

Typ

 

t

10s

32

Steady State

 

60

Maximum Junction-to-Ambient A

Maximum Junction-to-Ambient A

Maximum Junction-to-Lead C

Steady State

R

R

θJA

θJL

 

Units

 

°C/W

 

°C/W

17

24

°C/W

  °C/W   °C/W 17 24 °C/W Alpha & Omega Semiconductor, Ltd. Downloaded from
  °C/W   °C/W 17 24 °C/W Alpha & Omega Semiconductor, Ltd. Downloaded from
  °C/W   °C/W 17 24 °C/W Alpha & Omega Semiconductor, Ltd. Downloaded from
  °C/W   °C/W 17 24 °C/W Alpha & Omega Semiconductor, Ltd. Downloaded from
  °C/W   °C/W 17 24 °C/W Alpha & Omega Semiconductor, Ltd. Downloaded from
  °C/W   °C/W 17 24 °C/W Alpha & Omega Semiconductor, Ltd. Downloaded from
  °C/W   °C/W 17 24 °C/W Alpha & Omega Semiconductor, Ltd. Downloaded from
  °C/W   °C/W 17 24 °C/W Alpha & Omega Semiconductor, Ltd. Downloaded from
  °C/W   °C/W 17 24 °C/W Alpha & Omega Semiconductor, Ltd. Downloaded from
  °C/W   °C/W 17 24 °C/W Alpha & Omega Semiconductor, Ltd. Downloaded from
  °C/W   °C/W 17 24 °C/W Alpha & Omega Semiconductor, Ltd. Downloaded from
  °C/W   °C/W 17 24 °C/W Alpha & Omega Semiconductor, Ltd. Downloaded from
  °C/W   °C/W 17 24 °C/W Alpha & Omega Semiconductor, Ltd. Downloaded from
  °C/W   °C/W 17 24 °C/W Alpha & Omega Semiconductor, Ltd. Downloaded from
  °C/W   °C/W 17 24 °C/W Alpha & Omega Semiconductor, Ltd. Downloaded from

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AO4407A

Electrical Characteristics (T J =25°C unless otherwise noted)

Symbol Parameter Conditions STATIC PARAMETERS B V DSS Drain-Source Breakdown Voltage I Zero Gate
Symbol Parameter Conditions STATIC PARAMETERS B V DSS Drain-Source Breakdown Voltage I Zero Gate

Symbol

Parameter

Conditions

Symbol Parameter Conditions

STATIC PARAMETERS

BV DSS

Drain-Source Breakdown Voltage

I Zero Gate Voltage Drain Current

DSS

I Gate-Body leakage current

GSS

V GS(th)

I D(ON)

Gate Threshold Voltage

On state drain current

R DS(ON)

Static Drain-Source On-Resistance

I D = -250µA, V GS = 0V

-30

V DS = -30V, V GS = 0V

-1

 

T J = 55°C

-5

V DS = 0V, V GS = ±25V

±100

V DS = V GS I D = -250µA

-1.7

-2.3

-3

V GS = -10V, V DS = -5V

-60

V GS = -20V, I D = -12A

8.5

11

 

T J =125°C

11.5

15

V GS = -10V, I D = -12A

10

13

V GS = -5V, I D = -10A

27

38

V

µA

nA

V

A

m

D = -10A 27 38 V µ A nA V A m Ω g FS Forward
D = -10A 27 38 V µ A nA V A m Ω g FS Forward
D = -10A 27 38 V µ A nA V A m Ω g FS Forward
D = -10A 27 38 V µ A nA V A m Ω g FS Forward
D = -10A 27 38 V µ A nA V A m Ω g FS Forward
D = -10A 27 38 V µ A nA V A m Ω g FS Forward
D = -10A 27 38 V µ A nA V A m Ω g FS Forward
D = -10A 27 38 V µ A nA V A m Ω g FS Forward
D = -10A 27 38 V µ A nA V A m Ω g FS Forward
D = -10A 27 38 V µ A nA V A m Ω g FS Forward
D = -10A 27 38 V µ A nA V A m Ω g FS Forward
D = -10A 27 38 V µ A nA V A m Ω g FS Forward
D = -10A 27 38 V µ A nA V A m Ω g FS Forward
D = -10A 27 38 V µ A nA V A m Ω g FS Forward
D = -10A 27 38 V µ A nA V A m Ω g FS Forward
D = -10A 27 38 V µ A nA V A m Ω g FS Forward
D = -10A 27 38 V µ A nA V A m Ω g FS Forward
D = -10A 27 38 V µ A nA V A m Ω g FS Forward
D = -10A 27 38 V µ A nA V A m Ω g FS Forward
D = -10A 27 38 V µ A nA V A m Ω g FS Forward
D = -10A 27 38 V µ A nA V A m Ω g FS Forward
D = -10A 27 38 V µ A nA V A m Ω g FS Forward
D = -10A 27 38 V µ A nA V A m Ω g FS Forward
D = -10A 27 38 V µ A nA V A m Ω g FS Forward
D = -10A 27 38 V µ A nA V A m Ω g FS Forward
D = -10A 27 38 V µ A nA V A m Ω g FS Forward
D = -10A 27 38 V µ A nA V A m Ω g FS Forward
D = -10A 27 38 V µ A nA V A m Ω g FS Forward
D = -10A 27 38 V µ A nA V A m Ω g FS Forward
D = -10A 27 38 V µ A nA V A m Ω g FS Forward
D = -10A 27 38 V µ A nA V A m Ω g FS Forward
D = -10A 27 38 V µ A nA V A m Ω g FS Forward
D = -10A 27 38 V µ A nA V A m Ω g FS Forward
D = -10A 27 38 V µ A nA V A m Ω g FS Forward
D = -10A 27 38 V µ A nA V A m Ω g FS Forward
D = -10A 27 38 V µ A nA V A m Ω g FS Forward
D = -10A 27 38 V µ A nA V A m Ω g FS Forward
D = -10A 27 38 V µ A nA V A m Ω g FS Forward
D = -10A 27 38 V µ A nA V A m Ω g FS Forward
D = -10A 27 38 V µ A nA V A m Ω g FS Forward
D = -10A 27 38 V µ A nA V A m Ω g FS Forward

g FS

Forward Transconductance

V DS = -5V, I D = -10A

21 S

V SD

Diode Forward Voltage

I S = -1A,V GS = 0V

-0.7

-1

V

I S

Maximum Body-Diode Continuous Current

-3

A

DYNAMIC PARAMETERS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

V GS =0V, V DS =-15V, f=1MHz

Gate resistance

V GS =0V, V DS =0V, f=1MHz

C iss C oss C rss R g

C

iss

C

oss

C

rss

R

g

C iss C oss C rss R g
C iss C oss C rss R g
2060 2600 pF 370 pF 295 pF 2.4 3.6 Ω
2060 2600 pF 370 pF 295 pF 2.4 3.6 Ω
2060 2600 pF 370 pF 295 pF 2.4 3.6 Ω

2060

2600 pF

2060 2600 pF 370 pF 295 pF 2.4 3.6 Ω
2060 2600 pF 370 pF 295 pF 2.4 3.6 Ω

370

pF

295

pF

2.4

3.6

370 pF 295 pF 2.4 3.6 Ω

SWITCHING PARAMETERS

Q g

Total Gate Charge

Gate Source Charge

Gate Drain Charge

V GS =-10V, V DS =-15V, I D =-12A

30

39

Turn-On DelayTime

Turn-On Rise Time

V GS =-10V, V DS =-15V, R L =1.25, R GEN =3

Turn-Off DelayTime

Turn-Off Fall Time

Q gs Q gd t D(on) t r t D(off) t f t rr Q
Q gs Q gd t D(on) t r t D(off) t f t rr Q

Q

gs

Q

gd

t

D(on)

t

r

t

D(off)

t

f

t

rr

Q

rr

t r t D(off) t f t rr Q rr Body Diode Reverse Recovery Time Body
t r t D(off) t f t rr Q rr Body Diode Reverse Recovery Time Body

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

I F =-12A, dI/dt=100A/µs

I F =-12A, dI/dt=100A/µs

nC 4.6 10 11 9.4 24 12 30 22 nC 40 nC ns ns ns
nC 4.6 10 11 9.4 24 12 30 22 nC 40 nC ns ns ns
nC 4.6 10 11 9.4 24 12 30 22 nC 40 nC ns ns ns
nC 4.6 10 11 9.4 24 12 30 22 nC 40 nC ns ns ns
nC 4.6 10 11 9.4 24 12 30 22 nC 40 nC ns ns ns

nC

4.6

10

11

9.4

24

12

30

22

nC

40

nC

ns

ns

ns

ns

ns

nC

Min

Typ

Max

Units

A: The value of R θJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A = 25°C. The

value in any given application depends on the user's specific board design. The current rating is based on the t

rating.

B: Repetitive rating, pulse width limited by junction temperature.

C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.

D. The static characteristics in Figures 1 to 6 are obtained using < 300 µs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The SOA

curve provides a single pulse rating.

F. The current rating is based on the t 10s thermal resistance rating.

G. E AR and I AR ratings are based on low frequency and duty cycles to keep T j =25C.

Rev7: July 2008

10s thermal resistance

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

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AO4407A

-I D (A)

-I D (A)

Normalized On-Resistance

)

R DS(ON) (m

)

-I S (A)

R DS(ON) (m

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

80

60

40

20

0

-10V -6V -5V -4.5V -4V V GS = -3.5V
-10V
-6V
-5V
-4.5V
-4V
V GS = -3.5V

80

60

40

20

0

V D S = -5V

V DS = -5V

V D S = -5V
V D S = -5V 125°C 25°C
V D S = -5V 125°C 25°C

125°C

25°C

V D S = -5V 125°C 25°C
V D S = -5V 125°C 25°C

012345 0

-V DS (Volts) Figure 1: On-Region Characteristics

0.5

2.5

-V GS (Volts) Figure 2: Transfer Characteristics

1

1.5

2

3

3.5

4

4.5

5

40

30

20

10

0

V G S =-5V V G S =-10V V G S =-20V
V G S =-5V V G S =-10V V G S =-20V
V G S =-5V V G S =-10V V G S =-20V

V

GS =-5V

V

GS =-10V

V

GS =-20V

V G S =-5V V G S =-10V V G S =-20V
V G S =-5V V G S =-10V V G S =-20V
V G S =-5V V G S =-10V V G S =-20V
V G S =-5V V G S =-10V V G S =-20V
V G S =-5V V G S =-10V V G S =-20V
V G S =-5V V G S =-10V V G S =-20V
V G S =-5V V G S =-10V V G S =-20V
V G S =-5V V G S =-10V V G S =-20V

0

30

25

20

15

10

5

4

8

=-6.5A, dI/dt=100A/µs

I

12

F

16

20

-I D (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage

I D =-12A 125°C 25°C
I D =-12A 125°C 25°C
I D =-12A 125°C 25°C
I D =-12A 125°C 25°C
I D =-12A 125°C 25°C
I
D =-12A
125°C
25°C
I D =-12A 125°C 25°C
I D =-12A 125°C 25°C
I D =-12A 125°C 25°C
I D =-12A 125°C 25°C

3

4

5

6

7

8

9

10

-V GS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage

1.6

1.4

1.2

1.0

0.8

V G S =-20V
V G S =-20V
V G S =-20V
V G S =-20V

V GS =-20V

I =-12A D V I V GS =-5V I D =-10A
I
=-12A
D
V
I
V
GS =-5V
I
D =-10A
V G S =-20V I =-12A D V I V GS =-5V I D =-10A G
V G S =-20V I =-12A D V I V GS =-5V I D =-10A G
V G S =-20V I =-12A D V I V GS =-5V I D =-10A G
V G S =-20V I =-12A D V I V GS =-5V I D =-10A G

GS =-10V

D =-12A

0

25

50

75

100

125

150

175

Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature

1E+01

1E+00

1E-01

1E-02

1E-03

1E-04

1E-05

1E-06

125°C 25°C
125°C 25°C
125°C 25°C
125°C 25°C
125°C 25°C
125°C 25°C
125°C 25°C

125°C

25°C

25°C

125°C 25°C
125°C 25°C
125°C 25°C
125°C 25°C
125°C 25°C

0.0

0.6

-V SD (Volts) Figure 6: Body-Diode Characteristics

0.2

0.4

0.8

1.0

1.2

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AO4407A

Capacitance (pF)

-V GS (Volts)

-I D (Amps)

Power (W)

Normalized Transient Thermal Resistance

Z JAθ

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10

8

6

4

2

0

100

10

1

0.1

0.01

V DS =-15V I D =-12A
V
DS =-15V
I
D =-12A

0

15

Q g (nC) Figure 7: Gate-Charge Characteristics

5

10

20

25

30

T T
T T
T T
T T

T

T

T T
T T
T T
T T
T T R DS(ON) limited J(Max) =150°C A =25°C 10 µ s 100 µ s 1ms
T T R DS(ON) limited J(Max) =150°C A =25°C 10 µ s 100 µ s 1ms
R DS(ON) limited J(Max) =150°C A =25°C
R DS(ON) limited
J(Max) =150°C
A =25°C
10 µ s 100 µ s 1ms 10ms 100 ms 10s DC

10µs

100µs

1ms

10ms

100

ms

10s

DC

T T R DS(ON) limited J(Max) =150°C A =25°C 10 µ s 100 µ s 1ms
T T R DS(ON) limited J(Max) =150°C A =25°C 10 µ s 100 µ s 1ms
T T R DS(ON) limited J(Max) =150°C A =25°C 10 µ s 100 µ s 1ms
T T R DS(ON) limited J(Max) =150°C A =25°C 10 µ s 100 µ s 1ms
T T R DS(ON) limited J(Max) =150°C A =25°C 10 µ s 100 µ s 1ms
T T R DS(ON) limited J(Max) =150°C A =25°C 10 µ s 100 µ s 1ms
T T R DS(ON) limited J(Max) =150°C A =25°C 10 µ s 100 µ s 1ms
T T R DS(ON) limited J(Max) =150°C A =25°C 10 µ s 100 µ s 1ms
T T R DS(ON) limited J(Max) =150°C A =25°C 10 µ s 100 µ s 1ms
T T R DS(ON) limited J(Max) =150°C A =25°C 10 µ s 100 µ s 1ms
T T R DS(ON) limited J(Max) =150°C A =25°C 10 µ s 100 µ s 1ms
T T R DS(ON) limited J(Max) =150°C A =25°C 10 µ s 100 µ s 1ms
T T R DS(ON) limited J(Max) =150°C A =25°C 10 µ s 100 µ s 1ms

0.1

1

10

-V DS (Volts)

100

Figure 9: Maximum Forward Biased Safe Operating Area (Note E)

3000

2500

2000

1500

1000

500

0

C iss C oss C rss
C iss C oss C rss
C iss C oss C rss
C iss C oss C rss

C iss

C iss C oss C rss
C iss C oss C rss

C oss

C oss C rss

C rss

C iss C oss C rss
C iss C oss C rss
C iss C oss C rss
C iss C oss C rss

0

15

-V DS (Volts) Figure 8: Capacitance Characteristics

5

10

20

25

30

1000

100

10

1

T J ( M a x ) =150°C T A =25°C
T J ( M a x ) =150°C T A =25°C
T J ( M a x ) =150°C T A =25°C
T J ( M a x ) =150°C T A =25°C
T J ( M a x ) =150°C T A =25°C
T J ( M a x ) =150°C T A =25°C
T J ( M a x ) =150°C T A =25°C
T J ( M a x ) =150°C T A =25°C
T J ( M a x ) =150°C T A =25°C

T

J(Max) =150°C

T A =25°C

T

T A =25°C

A =25°C

T J ( M a x ) =150°C T A =25°C
T J ( M a x ) =150°C T A =25°C
T J ( M a x ) =150°C T A =25°C
T J ( M a x ) =150°C T A =25°C
T J ( M a x ) =150°C T A =25°C
T J ( M a x ) =150°C T A =25°C
T J ( M a x ) =150°C T A =25°C
T J ( M a x ) =150°C T A =25°C
T J ( M a x ) =150°C T A =25°C
T J ( M a x ) =150°C T A =25°C
T J ( M a x ) =150°C T A =25°C
T J ( M a x ) =150°C T A =25°C

0.00001

0.1

Pulse Width (s) Figure 10: Single Pulse Power Rating Junction- to-Ambient (Note E)

0.001

10

1000

10

1

0.1

0.01

0.001

D=T o n T J,PK R θ J A =75°C/W /T In D=0.5, 0.3, 0.1,
D=T o n T J,PK R θ J A =75°C/W /T In D=0.5, 0.3, 0.1,
D=T o n T J,PK R θ J A =75°C/W /T

D=T on

T J,PK

R θJA =75°C/W

/T

D=T o n T J,PK R θ J A =75°C/W /T
D=T o n T J,PK R θ J A =75°C/W /T
D=T o n T J,PK R θ J A =75°C/W /T
D=T o n T J,PK R θ J A =75°C/W /T
D=T o n T J,PK R θ J A =75°C/W /T
D=T o n T J,PK R θ J A =75°C/W /T

In

D=0.5, 0.3, 0.1,

descending

order

0.05, 0.02,

0.01, single

pulse

JA .R θJA

=T A +P DM .Z θ

0.02, 0.01, single pulse JA . R θ JA =T A +P D M .Z θ
0.02, 0.01, single pulse JA . R θ JA =T A +P D M .Z θ
0.02, 0.01, single pulse JA . R θ JA =T A +P D M .Z θ
0.02, 0.01, single pulse JA . R θ JA =T A +P D M .Z θ
0.02, 0.01, single pulse JA . R θ JA =T A +P D M .Z θ
0.02, 0.01, single pulse JA . R θ JA =T A +P D M .Z θ
0.02, 0.01, single pulse JA . R θ JA =T A +P D M .Z θ
0.02, 0.01, single pulse JA . R θ JA =T A +P D M .Z θ
0.02, 0.01, single pulse JA . R θ JA =T A +P D M .Z θ
0.02, 0.01, single pulse JA . R θ JA =T A +P D M .Z θ
0.02, 0.01, single pulse JA . R θ JA =T A +P D M .Z θ
0.02, 0.01, single pulse JA . R θ JA =T A +P D M .Z θ
0.02, 0.01, single pulse JA . R θ JA =T A +P D M .Z θ
0.02, 0.01, single pulse JA . R θ JA =T A +P D M .Z θ
0.02, 0.01, single pulse JA . R θ JA =T A +P D M .Z θ
0.02, 0.01, single pulse JA . R θ JA =T A +P D M .Z θ
0.02, 0.01, single pulse JA . R θ JA =T A +P D M .Z θ
0.02, 0.01, single pulse JA . R θ JA =T A +P D M .Z θ
0.02, 0.01, single pulse JA . R θ JA =T A +P D M .Z θ
0.02, 0.01, single pulse JA . R θ JA =T A +P D M .Z θ
0.02, 0.01, single pulse JA . R θ JA =T A +P D M .Z θ
0.02, 0.01, single pulse JA . R θ JA =T A +P D M .Z θ
P D T on Single Pulse T
P
D
T
on
Single Pulse
T

0.00001

0.0001

0.1

Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance(Note E)

0.001

0.01

1

10

100

1000

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AO4407A

Gate Charge Test Circuit & Waveform

+ VDC + - VDC - DUT Vgs Ig
+
VDC
+
-
VDC
-
DUT
Vgs
Ig

Vds

Vgs Qg 10V Qgs Qgd
Vgs
Qg
10V
Qgs
Qgd

Charge

Resistive Switching Test Circuit & Waveforms

RL Vds Vds 90% + DUT Vgs Vdd VDC Rg - 10% Vgs Vgs t
RL
Vds
Vds
90%
+
DUT
Vgs
Vdd
VDC
Rg
-
10%
Vgs
Vgs
t r
t d(on)
t f
t d(off)
t on
t off

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L Vds Id + Vgs Vgs VDC Rg - DUT DUT L Isd + Vgs
L
Vds
Id
+
Vgs
Vgs
VDC
Rg
-
DUT
DUT
L
Isd
+
Vgs
Vdd
VDC
-
Ig

Vgs

Vds +

Vds -

2 E = 1/2 LI AR AR Vds I Id Vgs
2
E
= 1/2 LI
AR
AR
Vds
I
Id
Vgs

BV DSS

AR

Vdd

Diode RecoveryTest Circuit & Waveforms

Q = - Idt rr Vgs Isd I F t rr dI/dt I RM Vds
Q
= -
Idt
rr
Vgs
Isd
I F
t
rr
dI/dt
I RM
Vds

Vdd

Alpha & Omega Semiconductor, Ltd.

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