SCT3030ALHR

Automotive Grade N-channel SiC power MOSFET Datasheet

lOutline
TO-247N
VDSS 650V
RDS(on) (Typ.) 30mΩ
ID*1 70A
PD 262W (1) (2)(3)

lInner circuit

lFeatures
(1) Gate
1) Qualified to AEC-Q101 (2) Drain
(3) Source
2) Low on-resistance
3) Fast switching speed *Body Diode

4) Fast reverse recovery

Please note Driver Source and Power Source are
5) Easy to parallel not exchangeable. Their exchange might lead to
malfunction.
6) Simple to drive
7) Pb-free lead plating ; RoHS compliant lPackaging specifications
lApplication Packing Tube

・Automobile Reel size (mm) -

・Switch mode power supplies Tape width (mm) -
Type
Basic ordering unit (pcs) 30
Taping code C11
Marking SCT3030AL

lAbsolute maximum ratings (Ta = 25°C)

Parameter Symbol Value Unit
Drain - Source Voltage VDSS 650 V
Tc = 25°C ID *1 70 A
Continuous Drain current
Tc = 100°C ID *1 49 A
Pulsed Drain current ID,pulse *2 175 A
Gate - Source voltage (DC) VGSS -4 to +22 V
*3
Gate - Source surge voltage (tsurge < 300nsec) VGSS_surge -4 to +26 V
Recommended drive voltage VGS_op*4 0 / +18 V
Junction temperature Tj 175 °C
Range of storage temperature Tstg -55 to +175 °C

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TSZ22111・14・001 1/12 16.Nov.2018 - Rev.003
 SCT3030ALHR Datasheet

lElectrical characteristics (Ta = 25°C)

Values
Parameter Symbol Conditions Unit
Min. Typ. Max.
VGS = 0V, ID = 1mA
Drain - Source breakdown
V(BR)DSS Tj = 25°C 650 - - V
voltage
Tj = -55°C 650 - -
VGS = 0V, VDS =650V
Zero Gate voltage
IDSS Tj = 25°C - 1 10 μA
Drain current
Tj = 150°C - 2 -
Gate - Source leakage current IGSS+ VGS = +22V , VDS = 0V - - 100 nA
Gate - Source leakage current IGSS- VGS = -4V , VDS = 0V - - -100 nA
Gate threshold voltage VGS (th) VDS = 10V, ID = 13.3mA 2.7 - 5.6 V
VGS = 18V, ID = 27A
Static Drain - Source
RDS(on) *5 Tj = 25°C - 30 39 mΩ
on - state resistance
Tj = 150°C - 43 -
Gate input resistance RG f = 1MHz, open drain - 7 - Ω

lThermal resistance
Values
Parameter Symbol Unit
Min. Typ. Max.
Thermal resistance, junction - case RthJC - 0.44 0.57 °C/W

lTypical Transient Thermal Characteristics

Symbol Value Unit Symbol Value Unit
Rth1 2.56E-02 Cth1 1.39E-03
Rth2 1.95E-01 K/W Cth2 1.00E-02 Ws/K
Rth3 2.20E-01 Cth3 3.57E-02

Tj Rth1 Rth,n Tc

PD Cth1 Cth2 Cth,n

Ta

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TSQ50211-SCT3030ALHR
TSZ22111・15・001 2/12 16.Nov.2018 - Rev.003
 SCT3030ALHR Datasheet

lElectrical characteristics (Ta = 25°C)

Values
Parameter Symbol Conditions Unit
Min. Typ. Max.
Transconductance gfs *5 VDS = 10V, ID = 27A - 9.4 - S
Input capacitance Ciss VGS = 0V - 1526 -
Output capacitance Coss VDS = 500V - 89 - pF
Reverse transfer capacitance Crss f = 1MHz - 42 -

Effective output capacitance, VGS = 0V

Co(er) - 230 - pF
energy related VDS = 0V to 300V
VDS = 300V
Total Gate charge Qg *5 - 104 -
ID = 27A
*5
Gate - Source charge Qgs VGS = 18V - 19 - nC

See Fig. 1-1.

Gate - Drain charge Qgd *5 - 55 -

VDS = 300V
Turn - on delay time td(on) *5 - 22 -
ID = 18A
*5
Rise time tr VGS = 0V/+18V - 41 -
ns
*5 RG = 0Ω
Turn - off delay time td(off) - 48 -
RL = 17Ω
Fall time tf *5 See Fig. 1-1, 1-2. - 27 -

VDS = 300V
Turn - on switching loss Eon *5 VGS=0V/18V, ID = 27A - 168 -
RG = 0Ω, L = 250μH
μJ
Eon includes diode
reverse recovery
Turn - off switching loss Eoff *5 Lσ = 50nH, Cσ = 200pF - 112 -
See Fig. 2-1, 2-2.

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TSQ50211-SCT3030ALHR
TSZ22111・15・001 3/12 16.Nov.2018 - Rev.003
 SCT3030ALHR Datasheet

lBody diode electrical characteristics (Source-Drain) (Ta = 25°C)

Values
Parameter Symbol Conditions Unit
Min. Typ. Max.
Body diode continuous,
IS *1 - - 70 A
forward current
Tc = 25°C
Body diode direct current,
ISM *2 - - 175 A
pulsed
Forward voltage VSD *5 VGS = 0V, ID = 27A - 3.2 - V
IF = 27A
Reverse recovery time trr *5 - 26 - ns
VR = 300V
*5
Reverse recovery charge Qrr di/dt = 1100A/μs - 130 - nC

Lσ = 50nH, Cσ = 200pF
Peak reverse recovery current Irrm *5 - 10 - A
See Fig. 3-1, 3-2.

*1 Limited by maximum temperature allowed.

*2 PW  10μs, Duty cycle  1%

*3 Example of acceptable VGS waveform

Please note especially when using driver source that VGSS_surge must be in the range of
absolute maximum rating.

*4 Please be advised not to use SiC-MOSFETs with VGS below 13V as doing so may cause
thermal runaway.

*5 Pulsed

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TSZ22111・15・001 4/12 16.Nov.2018 - Rev.003
 SCT3030ALHR Datasheet

lElectrical characteristic curves

Fig.2 Maximum Safe Operating Area

Fig.1 Power Dissipation Derating Curve

300 1000
Operation in this area is limited by RDS(on)

250
Power Dissipation : PD [W]

100

Drain Current : ID [A]

200
PW = 1μs*
150 10 PW = 10μs*
PW = 100μs

100 PW = 1ms
PW = 10ms
1
50 Ta = 25ºC
Single Pulse
*Calculation(PW10μs)
0 0.1
25 75 125 175 0.1 1 10 100 1000
Case Temperature : TC [°C] Drain - Source Voltage : VDS [V]

Fig.3 Typical Transient Thermal

Resistance vs. Pulse Width
1
Transient Thermal Resistance :

0.1
RthJC [K/W]

0.01

0.001
Ta = 25ºC
Single Pulse
0.0001
1E-6 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0 1E+1

Pulse Width : PW [s]

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TSZ22111・15・001 5/12 16.Nov.2018 - Rev.003
 SCT3030ALHR Datasheet

lElectrical characteristic curves

Fig.4 Typical Output Characteristics(I) Fig.5 Typical Output Characteristics(II)

70 35
20V 20V
Ta = 25ºC
60 30 18V 14V
18V Pulsed
16V
Drain Current : ID [A]

Drain Current : ID [A]

50 16V 14V 25 Ta = 25ºC
Pulsed
12V
40 20 12V

30 15
10V

20 10V 10

10 5 VGS= 8V
VGS= 8V

0 0
0 2 4 6 8 10 0 1 2 3 4 5
Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V]

Fig.6 Tj = 25ºC 3rd Quadrant Characteristics

0
Ta = 25ºC
-10 Pulsed
VGS = -4V
Drain Current : ID [A]

-20 VGS = -2V

VGS = 0V
VGS = 18V
-30

-40

-50

-60

-70
-10 -8 -6 -4 -2 0
Drain - Source Voltage : VDS [V]

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TSZ22111・15・001 6/12 16.Nov.2018 - Rev.003
 SCT3030ALHR Datasheet

lElectrical characteristic curves

Fig.7 Tj = 150ºC Typical Output Fig.8 Tj = 150ºC Typical Output

Characteristics(I) Characteristics(II)
70 35
20V 20V
60 14V 18V 14V
18V 30
16V 12V
16V
Drain Current : ID [A]

Drain Current : ID [A]

50 12V 25 10V
10V
40 20

30 15 VGS= 8V

20 VGS= 8V 10

10 Ta = 150ºC
Ta = 150ºC 5
Pulsed
Pulsed
0 0
0 2 4 6 8 10 0 1 2 3 4 5
Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V]

Fig.10 Body Diode Forward Voltage

Fig.9 Tj = 150ºC 3rd Quadrant Characteristics
　　　 vs. Gate - Source Voltage
0 6
Body Diode Forward Voltage : VSD [V]

Ta = 150ºC ID=27A
-10 Pulsed
5
VGS = -4V
Drain Current : ID [A]

-20 VGS = -2V

VGS = 0V 4
-30 VGS = 18V
3
-40
2
-50 Ta= 150ºC

-60 1
Ta= 25ºC
-70 0
-10 -8 -6 -4 -2 0 -4 0 4 8 12 16 20
Drain - Source Voltage : VDS [V] Gate - Source Voltage : VGS [V]

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 SCT3030ALHR Datasheet

lElectrical characteristic curves

Fig.11 Typical Transfer Characteristics (I) Fig.12 Typical Transfer Characteristics (II)

100 70
VDS = 10V VDS = 10V
Pulsed 60 Pulsed

10
Drain Current : ID [A]

Drain Current : ID [A]

50

40
1 Ta= 150ºC
Ta= 75ºC Ta= 150ºC
Ta= 25ºC
30
Ta= 75ºC
Ta= -25ºC Ta= 25ºC
20 Ta= -25ºC
0.1
10

0.01 0
0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 14 16 18 20
Gate - Source Voltage : VGS [V] Gate - Source Voltage : VGS [V]

Fig.13 Gate Threshold Voltage

Fig.14 Transconductance vs. Drain Current
vs. Junction Temperature
6 10
Gate Threshold Voltage : V GS(th) [V]

VDS = 10V VDS = 10V

5 ID = 13.3mA Pulsed
Transconductance : gfs [S]

3 1

2 Ta = 150ºC
Ta = 75ºC
Ta = 25ºC
1 Ta = -25ºC

0 0.1
-50 0 50 100 150 200 0.1 1 10
Junction Temperature : Tj [ºC] Drain Current : ID [A]

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 SCT3030ALHR Datasheet

lElectrical characteristic curves

Fig.15 Static Drain - Source On - State Fig.16 Static Drain - Source On - State
Resistance vs. Gate - Source Voltage Resistance vs. Junction Temperature
0.12 0.06
Ta = 25ºC VGS = 18V
Pulsed
Static Drain - Source On-State

Static Drain - Source On-State

0.10 0.05 Pulsed
Resistance : RDS(on) [Ω]

Resistance : RDS(on) [Ω]

ID= 47A ID= 47A
0.08 0.04 ID= 27A

0.06 0.03
ID= 27A ID= -27A

0.04 0.02
ID= -27A
0.02 0.01

0.00 0.00
8 10 12 14 16 18 20 22 -50 0 50 100 150 200
Gate - Source Voltage : VGS [V] Junction Temperature : Tj [ºC]

Fig.17 Static Drain - Source On - State Fig.18 Normalized Drain - Source Breakdown
Resistance vs. Drain Current Voltage vs. Junction Temperature
0.1 1.04
Static Drain - Source On-State

1.03
Normalized Drain - Source
Resistance : RDS(on) [Ω]

Breakdown Voltage

1.02

1.01

Ta = 150ºC
1.00
Ta = 125ºC
Ta = 75ºC
Ta = 25ºC 0.99
VGS = 18V Ta = -25ºC
Pulsed
0.01 0.98
1 10 100 -50 0 50 100 150 200
Drain Current : ID [A] Junction Temperature : Tj [ºC]

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 SCT3030ALHR Datasheet

lElectrical characteristic curves

Fig.19 Typical Capacitance

Fig.20 Coss Stored Energy
　　　　　vs. Drain - Source Voltage
10000 20
Ta = 25ºC
Ciss

Coss Stored Energy : EOSS [µJ]

1000 15
Capacitance : C [pF]

Coss

100 10
Crss

10 5
Ta = 25ºC
f = 1MHz
VGS = 0V
1 0
0.1 1 10 100 1000 0 100 200 300 400
Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V]

Fig.21 Dynamic Input Characteristics

*Gate Charge Waveform
20
Ta = 25ºC
Gate - Source Voltage : VGS [V]

VDD = 300V
ID = 27A
15 Pulsed

10

0
0 20 40 60 80 100 120
Total Gate Charge : Qg [nC]

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 SCT3030ALHR Datasheet

lElectrical characteristic curves

Fig.19 Typical Switching Time Fig.20 Typical Switching Loss

　　　　　vs. Drain Current 　　　　　vs. Drain - Source Voltage
10000 400
Ta = 25°C Ta = 25°C
VDD= 300V 350 ID = 27A
VGS= +18V/0V
VGS= +18V/0V

Switching Energy : E [µJ]

RG = 0Ω
1000 0Ω 300
Switching Time : t [ns]

RG = L= 250μH
tf
250

100 200 Eon

td(off)
tr
150

10 td(on) 100 Eoff

50

1 0
0.1 1 10 100 100 200 300 400 500
Drain Current : ID [A] Drain - Source Voltage : VDS [V]

Fig.21 Typical Switching Loss Fig.22 Typical Switching Loss

　　　　　vs. Drain Current 　　　　　vs. External Gate Resistance
1200 1200
Ta = 25°C Ta = 25°C
VDD= 300V ID = 27A
1000 VGS= +18V/0V 1000 VDD= 300V
Switching Energy : E [µJ]

Switching Energy : E [µJ]

RG = 0Ω VGS= +18V/0V
L= 250μH L= 250μH
800 800
Eon
600 600
Eon
400 400 Eoff

Eoff
200 200

0 0
0 10 20 30 40 50 60 70 80 0 5 10 15 20 25 30
Drain Current : ID [A] External Gate Resistance : RG [Ω]

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TSZ22111・15・001 11/12 16.Nov.2018 - Rev.003
 SCT3030ALHR
Datasheet

lMeasurement circuits and waveforms

Fig.1-1 Gate Charge and Switching Time Measurement Circuit Fig.1-2 Waveforms for Switching Time

Fig.2-1 Switching Energy Measurement Circuit Fig.2-2 Waveforms for Switching Energy Loss
Eon = ID ∙ VDS dt Eoff = ID ∙ VDS dt

Irr Vsurge
VDS

ID

Fig.3-1 Reverse Recovery Time Measurement Circuit Fig.3-2 Reverse Recovery Waveform

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 Notice

Notes
1) The information contained herein is subject to change without notice.

2) Before you use our Products, please contact our sales representative and verify the latest specifica-
tions.

3) Although ROHM is continuously working to improve product reliability and quality, semicon-
ductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.

4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.

5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
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