PROFET® BTS 620 L1

Smart Two Channel Highside Power Switch

Features
• Overload protection Product Summary
• Current limitation Overvoltage protection Vbb(AZ) 43 V
• Short circuit protection Operating voltage Vbb(on) 5.0 ... 24 V
• Thermal shutdown
both
• Overvoltage protection (including load dump) channels: each parallel
• Reverse battery protection1)
On-state resistance RON 100 50 mΩ
• Undervoltage and overvoltage shutdown with
auto-restart and hysteresis
Load current (ISO) IL(ISO) 4.4 8.5 A
• Open drain diagnostic output Current limitation IL(SCr) 10 10 A
• Open load detection in ON-state
• CMOS compatible input
• Loss of ground and loss of Vbb protection
TO-220AB/7
• Electrostatic discharge (ESD) protection

Application 7
• µC compatible power switch with diagnostic 1
feedback for 12 V DC grounded loads Standard
• Most suitable for resistive and lamp loads

General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection
functions.

+ V bb
4
Voltage Overvoltage Current Gate 1
source protection limit 1 protection
V Logic
OUT1
Voltage Level shifter
sensor Rectifier 1 1
Temperature
sensor 1
3 IN1
Charge Open load
6 IN2 pump 1 Short to Vbb
ESD Logic
detection 1
5 Charge Gate 2
ST Current
pump 2 limit 2 protection

Level shifter OUT2

Rectifier 2 7
Temperature Load
sensor 2
Open load R R
O1 O2
Short to Vbb
GND
 GND
detection 2
PROFET
2 Signal GND
Load GND

1) With external current limit (e.g. resistor RGND=150 Ω) in GND connection, resistor in series with ST
connection, reverse load current limited by connected load.
Semiconductor Group 1 12.96
 BTS 620 L1

Pin Symbol Function

1 OUT1 (Load, L) Output 1, protected high-side power output of channel 1
2 GND Logic ground
3 IN1 Input 1, activates channel 1 in case of logical high signal
4 Vbb Positive power supply voltage,
the tab is shorted to this pin
5 ST Diagnostic feedback: open drain, low on failure
6 IN2 Input 2, activates channel 2 in case of logical high signal
7 OUT2 (Load, L) Output 2, protected high-side power output of channel 2

Maximum Ratings at Tj = 25 °C unless otherwise specified

Parameter Symbol Values Unit

Supply voltage (overvoltage protection see page 3) Vbb 43 V
Supply voltage for full short circuit protection Vbb 24 V
Tj Start=-40 ...+150°C
Load dump protection2) VLoadDump = UA + Vs, UA = 13.5 V VLoad dump4) 60 V
RI3)= 2 Ω, RL= 2.7 Ω, td= 200 ms, IN= low or high
Load current (Short circuit current, see page 4) IL self-limited A
Operating temperature range Tj -40 ...+150 °C
Storage temperature range Tstg -55 ...+150
Power dissipation (DC), TC ≤ 25 °C Ptot 75 W
Electrostatic discharge capability (ESD) IN: VESD 1.0 kV
(Human Body Model) all other pins: 2.0
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993
Input voltage (DC) VIN -10 ... +16 V
Current through input pin (DC) IIN ±2.0 mA
Current through status pin (DC) IST ±5.0
see internal circuit diagrams page 6

Thermal Characteristics
Parameter and Conditions Symbol Values Unit
min typ max
Thermal resistance chip - case, both channels: RthJC -- -- 1.7 K/W
each channel: -- -- 3.4
junction - ambient (free air): RthJA -- -- 75

2) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins, e.g. with a
150 Ω resistor in the GND connection and a 15 kΩ resistor in series with the status pin. A resistor for the
protection of the input is integrated.
3) RI = internal resistance of the load dump test pulse generator
4) VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
Semiconductor Group 2
 BTS 620 L1

Electrical Characteristics
Parameter and Conditions, each channel Symbol Values Unit
at Tj = 25 °C, Vbb = 12 V unless otherwise specified min typ max

Load Switching Capabilities and Characteristics

On-state resistance (pin 4 to 1 or 7)
IL = 2 A Tj=25 °C: RON -- 80 100 mΩ
each channel Tj=150 °C: 160 200
Nominal load current, ISO Norm (pin 4 to 1 or 7) 3.5 4.4
VON = 0.5 V, TC = 85 °C each channel: IL(ISO) 6.8 8.5 -- A
both channels parallel: --
Output current (pin 1 or 7) while GND disconnected IL(GNDhigh) -- -- 10 mA
or GND pulled up, Vbb=30 V, VIN= 0, see diagram
page 7
Turn-on time IN to 90% VOUT: ton 80 200 400 µs
Turn-off time IN to 10% VOUT: toff 80 200 400
RL = 12 Ω, Tj =-40...+150°C
Slew rate on dV /dton 0.1 -- 1 V/µs
10 to 30% VOUT, RL = 12 Ω, Tj =-40...+150°C
Slew rate off -dV/dtoff 0.1 -- 1 V/µs
70 to 40% VOUT, RL = 12 Ω, Tj =-40...+150°C

Operating Parameters
Operating voltage 5) Tj =-40...+150°C: Vbb(on) 5.0 -- 34 V
Operating voltage6) Tj =-40...+150°C: Vbb(on) 5.0 -- 24 V
Undervoltage shutdown Tj =-40...+150°C: Vbb(under) 3.5 -- 5.0 V
Undervoltage restart Tj =-40...+25°C: Vbb(u rst) -- -- 5.0 V
Tj =+150°C: 7.0
Undervoltage restart of charge pump Vbb(ucp) -- 5.6 7.0 V
see diagram page 10 Tj =-40...+150°C:
Undervoltage hysteresis ∆Vbb(under) -- 0.2 -- V
∆Vbb(under) = Vbb(u rst) - Vbb(under)
Overvoltage shutdown Tj =-40...+150°C: Vbb(over) 24 -- 34 V
Overvoltage restart Tj =-40...+150°C: Vbb(o rst) 23 -- -- V
Overvoltage hysteresis Tj =-40...+150°C: ∆Vbb(over) -- 0.5 -- V
Overvoltage protection7) Tj =-40...+150°C: Vbb(AZ) 42 47 -- V
Ibb=40 mA
Standby current (pin 4)
VIN=0 Tj=-40...+25°C: Ibb(off) -- 14 30 µA
Tj= 150°C: -- 17 35

5) At supply voltage increase up to Vbb= 5.6 V typ without charge pump, VOUT ≈Vbb - 2 V
6) At supply voltage increase up to Vbb= 5.6 V typ without charge pump, VOUT ≈Vbb - 2 V
7) See also VON(CL) in table of protection functions and circuit diagram page 7.
Semiconductor Group 3
 BTS 620 L1
Parameter and Conditions, each channel Symbol Values Unit
at Tj = 25 °C, Vbb = 12 V unless otherwise specified min typ max

Leakage output current (included in Ibb(off)) IL(off) -- -- 12 µA

VIN=0
Operating current (Pin 2)8), VIN=5 V IGND -- 4 6 mA
both channels on, Tj =-40...+150°C
Operating current (Pin 2)8) IGND -- 2 3 mA
one channel on, Tj =-40...+150°C:

Protection Functions
Initial peak short circuit current limit (pin 4 to 1 IL(SCp)
or 7)
Tj =-40°C: 16 22 28 A
Tj =25°C: 12 18 24
Tj =+150°C: 7 11 15
Repetitive short circuit shutdown current limit IL(SCr)
Tj = Tjt (see timing diagrams, page 9) -- 10 -- A
Thermal overload trip temperature Tjt 150 -- -- °C
Thermal hysteresis ∆Tjt -- 10 -- K
Reverse battery (pin 4 to 2) 9) -Vbb -- -- 32 V
Reverse battery voltage drop (Vout > Vbb)
IL = -2.9 A, each channel Tj=150 °C: -VON(rev) -- 610 -- mV

Diagnostic Characteristics
Open load detection current Tj=-40 °C: IL (OL) 800 -- 1450 mA
(on-condition, ) Tj=25°C: 800 -- 1300
Tj=150°C: 550 -- 1200
Open load detection voltage10) (off-condition) VOUT(OL) 2 3 4 V
Tj=-40..150°C:
Internal output pull down
(pin 1 or 7 to 2), VOUT=5 V, Tj=-40..150°C RO 4 10 30 kΩ

8) Add IST, if IST > 0, add IIN, if VIN>5.5 V

9) Requires 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
max. ratings page 2 and circuit page 7).
10) External pull up resistor required for open load detection in off state.

Semiconductor Group 4
 BTS 620 L1
Parameter and Conditions, each channel Symbol Values Unit
at Tj = 25 °C, Vbb = 12 V unless otherwise specified min typ max

Input and Status Feedback11)

Input resistance RI 2.5 3.5 6 kΩ
Tj=-40..150°C, see circuit page 6
Input turn-on threshold voltage Tj =-40..+150°C: VIN(T+) 1.7 -- 3.5 V
Input turn-off threshold voltage Tj =-40..+150°C: VIN(T-) 1.5 -- -- V
Input threshold hysteresis ∆ VIN(T) -- 0.5 -- V
Off state input current (pin 3 or 6), VIN = 0.4 V, IIN(off) 1 -- 50 µA
Tj =-40..+150°C
On state input current (pin 3 or 6), VIN = 3.5 V, IIN(on) 20 50 90 µA
Tj =-40..+150°C
Delay time for status with open load after switch td(ST OL4) 100 320 800 µs
off (other channel in off state)
(see timing diagrams, page 10), Tj =-40..+150°C
Delay time for status with open load after switch td(ST OL5) -- 5 20 µs
off (other channel in on state)
(see timing diagrams, page 10), Tj =-40..+150°C
Status invalid after positive input slope td(ST) -- 200 600 µs
(open load) Tj=-40 ... +150°C:
Status output (open drain)
Zener limit voltage Tj =-40...+150°C, IST = +1.6 mA: VST(high) 5.4 6.1 -- V
ST low voltage Tj =-40...+25°C, IST = +1.6 mA: VST(low) -- -- 0.4
Tj = +150°C, IST = +1.6 mA: -- -- 0.6

11) If a ground resistor RGND is used, add the voltage drop across this resistor.

Semiconductor Group 5
 BTS 620 L1

Truth Table
IN1 IN2 OUT1 OUT2 ST
BTS620L1
BTS621L1
Normal operation L L L L H
L H L H H
H L H L H
H H H H H
Open load Channel 1 L L Z L H(L12))
L H Z H H
H X H X L
Channel 2 L L L Z H(L12))
H L H Z H
X H X H L
Short circuit to Vbb Channel 1 L L H L L13)
L H H H H
H X H X H(L14))
Channel 2 L L L H L13)
H L H H H
X H X H H(L14))
Overtemperature both channel L L L L H
X H L L L
H X L L L
Channel 1 L X L X H
H X L X L
Channel 2 X L X L H
X H X L L
Undervoltage/ Overvoltage X X L L H
L = "Low" Level X = don't care Z = high impedance, potential depends on external circuit
H = "High" Level Status signal after the time delay shown in the diagrams (see fig 5. page 10)

Terms Input circuit (ESD protection)

Ibb R
V I
V 4 ON1 IN
bb V
I IN1 ON2
3 Vbb
IN1 I L1
1
I IN2 OUT1 ESD-ZD I
I
PROFET I
IN2 I L2
6
I ST OUT2 GND
7
V V ST GND
IN1 IN2 V 5 V
ST OUT1
2
I VOUT2 ESD zener diodes are not to be used as voltage clamp
R GND
GND at DC conditions. Operation in this mode may result in
a drift of the zener voltage (increase of up to 1 V).

12) With additional external pull up resistor

13) An external short of output to Vbb, in the off state, causes an internal current from output to ground. If R GND
is used, an offset voltage at the GND and ST pins will occur and the VST low signal may be errorious.
14) Low resistance to V may be detected in the ON-state by the no-load-detection
bb

Semiconductor Group 6
 BTS 620 L1
Status output
+5V Open-load detection
ON-state diagnostic condition: VON < RON * IL(OL); IN
high
R ST(ON)
ST
+ V bb

ESD-
ZD
GND
VON
ESD-Zener diode: 6.1 V typ., max 5 mA; ON
RST(ON) < 380 Ω at 1.6 mA, ESD zener diodes are not
to be used as voltage clamp at DC conditions. OUT
Operation in this mode may result in a drift of the zener Logic Open load
voltage (increase of up to 1 V). unit detection

overvoltage output clamp

+ V bb
OFF-state diagnostic condition: VOUT > 3 V typ.; IN low
V
Z

VON
R
EXT

OUT OFF

GND PROFET V
OUT

Logic Open load

VON clamped to 47 V typ. R
O
unit detection

Overvolt. and reverse batt. protection Signal GND

+ V bb

RI
V
Z2
GND disconnect
IN1
IN2
Ibb
Logic V 4
bb
ST
R ST 3 Vbb
IN1 1
V OUT1
Z1
IN2 PROFET
6
GND
OUT2
7
R GND ST GND
5
2
Signal GND
V V V V
IN1 IN2 ST GND
VZ1 = 6.1 V typ., VZ2 = 47 V typ., RI= 3.5 kΩ typ,
RGND= 150 Ω
In case of Input=high is VOUT ≈ VIN - VIN(T+) .
Due to VGND >0, no VST = low signal available.

Semiconductor Group 7
 BTS 620 L1
GND disconnect with GND pull up Typ. transient thermal impedance chip case
ZthJC = f(tp), both Channel active
4 ZthJC [K/W]
3 Vbb 1
IN1
1
V OUT1
IN1
IN2 PROFET
6
V OUT2
IN2 7
ST GND
5
2

V V
V ST GND
bb
0.1
If VGND > VIN - VIN(T+) device stays off
Due to VGND >0, no VST = low signal available.
D=
0.5
0.2
Typ. transient thermal impedance chip case 0.1
ZthJC = f(tp), one Channel active 0.05
ZthJC [K/W] 0.02
10 0.01
0

0.01
1E-5 1E-4 1E-3 1E-2 1E-1 1E0 1E1

tp [s]
1

D=
0.5
0.1 0.2
0.1
0.05
0.02
0.01
0

0.01
1E-5 1E-4 1E-3 1E-2 1E-1 1E0 1E1

tp [s]

Semiconductor Group 8
 BTS 620 L1
Timing diagrams Both channels are symmetric and consequently the diagrams
are valid for each channel as well as for permuted channels

Figure 1a: Vbb turn on: Figure 3a: Short circuit

shut down by overtempertature, reset by cooling
IN1

IN other channel: normal operation

IN2

V bb

IL

V
OUT1 I L(SCp)
IL(SCr)

V
OUT2

ST open drain ST
t t

Heating up may require several milliseconds, depending on

Figure 2a: Switching a lamp: external conditions

IN Figure 4a: Overtemperature:

Reset if Tj <Tjt

ST IN

V ST
OUT

V
OUT
I
L

t
T
J

Semiconductor Group 9
 BTS 620 L1
Figure 5a: Open load: detection in ON-state, open Figure 5c: Open load: detection in ON- and OFF-state
load occurs in on-state (with REXT), turn on/off to open load

IN1 IN1

IN2 channel 2: normal operation IN2 channel 2: normal operation

VOUT1 V
OUT1

IL1 channel 1: I L1
open open channel 1: open load
normal
load load
load

t d(ST OL1) t t d(ST OL1)

d(ST OL2) t d(ST OL2) ST t t d(ST OL5)
t d(ST) d(ST)
ST
t t

td(ST OL1) = 30 µs typ., td(ST OL2) = 20 µs typ td(ST OL5) depends on external circuitry because of high
impedance

Figure 5b: Open load: detection in ON-state, turn

on/off to open load Figure 6a: Undervoltage:

IN1
IN

IN2 channel 2: normal operation

V bb

V V Vbb(u cp)
bb(under)
OUT1 V
bb(u rst)

V OUT
I
L1
channel 1: open load

t t t
d(ST) d(ST OL4) d(ST)
t
d(ST OL5) ST open drain
ST
t t

Semiconductor Group 10
 BTS 620 L1
Figure 6b: Undervoltage restart of charge pump

V on VON(CL)
off-state

on-state

off-state
V
bb(over)

V V
bb(u rst) bb(o rst)

V
bb(u cp)

V
bb(under)

V bb

charge pump starts at Vbb(ucp) =5.6 V typ.

Figure 7a: Overvoltage:

IN

V bb V ON(CL) Vbb(over) V bb(o rst)

V
OUT

ST

Semiconductor Group 11
 BTS 620 L1
Package and Ordering Code
All dimensions in mm
Standard TO-220AB/7 Ordering code
BTS620L1 Q67060-S6301-A2

Changed since 04.96

Date Change
Dec td(ST OL4) max reduced from
1996 1500 to 800µs, typical from 400 to
320µs, min limit unchanged
Zth specification added
max Output leakage current IL(off)
reduced from 20 to 12 µA
increased ESD capability
Typ. reverse battery voltage drop -
VON(rev) added

Semiconductor Group 12