MJE13005G

SWITCHMODEt Series
NPN Silicon Power
Transistors
These devices are designed for high−voltage, high−speed power
switching inductive circuits where fall time is critical. They are http://onsemi.com
particularly suited for 115 and 220 V SWITCHMODE applications
such as Switching Regulator’s, Inverters, Motor Controls,
4 AMPERE
Solenoid/Relay drivers and Deflection circuits.
NPN SILICON
Features POWER TRANSISTOR
• VCEO(sus) 400 V 400 VOLTS − 75 WATTS
• Reverse Bias SOA with Inductive Loads @ TC = 100_C
• Inductive Switching Matrix 2 to 4 A, 25 and 100_C tc @ 3A,
100_C is 180 ns (Typ)
• 700 V Blocking Capability
• SOA and Switching Applications Information
TO−220AB
• These Devices are Pb−Free and are RoHS Compliant* CASE 221A−09
STYLE 1
MAXIMUM RATINGS
Rating Symbol Value Unit
1
Collector−Emitter Voltage VCEO(sus) 400 Vdc 2
3
Collector−Emitter Voltage VCEV 700 Vdc
Emitter−Base Voltage VEBO 9 Vdc
MARKING DIAGRAM
Collector Current − Continuous IC 4 Adc
− Peak (Note 1) ICM 8
Base Current − Continuous IB 2 Adc
− Peak (Note 1) IBM 4
Emitter Current − Continuous IE 6 Adc MJE13005G
− Peak (Note 1) IEM 12
AY WW
Total Device Dissipation @ TA = 25_C PD 2 W
Derate above 25°C 0.016 W/_C
Total Device Dissipation @ TC = 25_C PD 75 W
Derate above 25°C 0.6 W/_C
Operating and Storage Junction TJ, Tstg −65 to _C A = Assembly Location
Temperature Range +150 Y = Year
WW = Work Week
THERMAL CHARACTERISTICS G = Pb−Free Package
Characteristics Symbol Max Unit
Thermal Resistance, Junction−to−Ambient RqJA 62.5 _C/W
Thermal Resistance, Junction−to−Case RqJC 1.67 _C/W ORDERING INFORMATION
Maximum Lead Temperature for Soldering TL 275 _C Device Package Shipping
Purposes 1/8″ from Case for 5 Seconds
Stresses exceeding Maximum Ratings may damage the device. Maximum MJE13005G TO−220 50 Units / Rail
(Pb−Free)
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.

*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2010 1 Publication Order Number:

August, 2010 − Rev. 9 MJE13005/D
 MJE13005G

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic Symbol Min Typ Max Unit

ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS (Note 2)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Collector−Emitter Sustaining Voltage VCEO(sus) 400 − − Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(IC = 10 mA, IB = 0)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Collector Cutoff Current ICEV mAdc
(VCEV = Rated Value, VBE(off) = 1.5 Vdc) − − 1

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 100_C) − − 5

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
Emitter Cutoff Current

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ IEBO − − 1 mAdc

ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(VEB = 9 Vdc, IC = 0)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
SECOND BREAKDOWN

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
Second Breakdown Collector Current with base forward biased IS/b − See Figure 11

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
Clamped Inductive SOA with Base Reverse Biased RBSOA − See Figure 12

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ON CHARACTERISTICS (Note 2)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
DC Current Gain hFE −
(IC = 1 Adc, VCE = 5 Vdc) 10 − 60

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ
(IC = 2 Adc, VCE = 5 Vdc)
ÎÎÎÎ
ÎÎÎ 8 − 40

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Collector−Emitter Saturation Voltage VCE(sat) Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(IC = 1 Adc, IB = 0.2 Adc) − − 0.5
(IC = 2 Adc, IB = 0.5 Adc)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
− − 0.6
(IC = 4 Adc, IB = 1 Adc) − − 1

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(IC = 2 Adc, IB = 0.5 Adc, TC = 100_C) − − 1

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Base−Emitter Saturation Voltage VBE(sat) Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(IC = 1 Adc, IB = 0.2 Adc) − − 1.2
(IC = 2 Adc, IB = 0.5 Adc) − − 1.6

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(IC = 2 Adc, IB = 0.5 Adc, TC = 100_C) − − 1.5

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
DYNAMIC CHARACTERISTICS
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Current−Gain − Bandwidth Product

ÎÎÎÎ
ÎÎÎ
(IC = 500 mAdc, VCE = 10 Vdc, f = 1 MHz)
fT 4 − − MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Output Capacitance Cob − 65 − pF
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
SWITCHING CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
Resistive Load (Table 2)
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
Delay Time
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ td − 0.025 0.1 ms

ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
Rise Time
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(VCC = 125 Vdc, IC = 2 A, tr − 0.3 0.7 ms

ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
IB1 = IB2 = 0.4 A, tp = 25 ms,
Storage Time Duty Cycle v 1%) ts − 1.7 4 ms

ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
Fall Time

ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ tf − 0.4 0.9 ms

ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Inductive Load, Clamped (Table 2, Figure 13)

ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ ÎÎÎÎ
Voltage Storage Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Crossover Time
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(IC = 2 A, Vclamp = 300 Vdc,
tsv
tc
−
−
0.9
0.32
4
0.9
ms
ms

ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
IB1 = 0.4 A, VBE(off) = 5 Vdc, TC = 100_C)
Fall Time tfi − 0.16 − ms
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%.

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 MJE13005G

VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

100 2
70 TJ = 150°C TJ = 25°C
1.6
50
hFE, DC CURRENT GAIN

25°C IC = 1 A 2A 3A 4A
30 1.2

20
-55°C 0.8

10 VCE = 2 V 0.4
7 VCE = 5 V

5 0
0.04 0.06 0.1 0.2 0.4 0.6 1 2 4 0.03 0.05 0.1 0.2 0.3 0.5 0.7 1 2 3
IC, COLLECTOR CURRENT (AMP) IB, BASE CURRENT (AMP)

Figure 1. DC Current Gain Figure 2. Collector Saturation Region

VCE(sat) , COLLECTOR-EMITTER SATURATION

1.3 0.55
VBE, BASE-EMITTER VOLTAGE (VOLTS)

VBE(sat) @ IC/IB = 4 IC/IB = 4

1.1 VBE(on) @ VCE = 2 V 0.45

VOLTAGE (VOLTS)
0.9 TJ = -55°C 0.35 TJ = -55°C

25°C 25°C
0.7 0.25
25°C
0.5 0.15 150°C
150°C

0.3 0.05
0.04 0.06 0.1 0.2 0.4 0.6 1 2 4 0.04 0.06 0.1 0.2 0.4 0.6 1 2 4
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)

Figure 3. Base−Emitter Voltage Figure 4. Collector−Emitter Saturation Voltage

10 k 2k
VCE = 250 V
1k Cib
IC, COLLECTOR CURRENT (A)

1k
μ

700
C, CAPACITANCE (pF)

TJ = 150°C 500
100 125°C 300
100°C 200
10 75°C
100
70
50°C
1 50
25°C
30 Cob
REVERSE FORWARD
0.1 20
-0.4 -0.2 0 +0.2 +0.4 +0.6 0.3 0.5 1 3 5 10 30 50 100 300
VBE, BASE-EMITTER VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)

Figure 5. Collector Cutoff Region Figure 6. Capacitance

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 MJE13005G

ICPK SWITCHING TIMES NOTE

Vclamp
In resistive switching circuits, rise, fall, and storage times
90% Vclamp 90% IC have been defined and apply to both current and voltage
IC tsv trv tfi tti waveforms since they are in phase. However, for inductive
loads which are common to SWITCHMODE power
tc supplies and hammer drivers, current and voltage
VCE 10% Vclamp
waveforms are not in phase. Therefore, separate
10% measurements must be made on each waveform to
IB 90% IB1 ICPK 2% IC
determine the total switching time. For this reason, the
following new terms have been defined.
tsv = Voltage Storage Time, 90% IB1 to 10% Vclamp
trv = Voltage Rise Time, 10−90% Vclamp
TIME
tfi = Current Fall Time, 90−10% IC
Figure 7. Inductive Switching Measurements tti = Current Tail, 10−2% IC

ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
Table 1. Typical Inductive Switching Performance
tc = Crossover Time, 10% Vclamp to 10% IC

ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
An enlarged portion of the inductive switching
IC TC tsv trv tfi tti tc waveforms is shown in Figure 7 to aid in the visual identity

ÎÎÎ
ÎÎÎ
AMP
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ _C ns ns ns ns ns of these terms.

ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎÎ
ÎÎÎ
2

ÎÎÎÎ
25
100
600
900
70
110
100
240
80
130
180
320
For the designer, there is minimal switching loss during
storage time and the predominant switching power losses

ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
3 25 650 60 140 60 200 occur during the crossover interval and can be obtained
using the standard equation from AN−222:

ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
100 950 100 330 100 350
PSWT = 1/2 VCCIC(tc)f

ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
4 25 550 70 160 100 220
100 850 110 350 160 390 In general, t rv + t fi ] tc. However, at lower test currents
NOTE: All Data recorded in the inductive Switching Circuit In Table 2.
this relationship may not be valid.
As is common with most switching transistors, resistive
switching is specified at 25°C and has become a benchmark
for designers. However, for designers of high frequency
converter circuits, the user oriented specifications which
make this a “SWITCHMODE” transistor are the inductive
switching speeds (tc and tsv) which are guaranteed at 100_C.

RESISTIVE SWITCHING PERFORMANCE

1 10
VCC = 125 V ts VCC = 125 V
0.5 IC/IB = 5 5 IC/IB = 5
TJ = 25°C TJ = 25°C
tr
0.2 2
t, TIME (s)

t, TIME (s)
μ

0.1 1

0.05 td @ VBE(off) = 5 V 0.5

0.3 tf
0.02 0.2

0.01 0.1
0.04 0.1 0.2 0.4 1 2 4 0.04 0.1 0.2 0.5 1 2 4
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)

Figure 8. Turn−On Time Figure 9. Turn−Off Time

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 MJE13005G

Table 2. Test Conditions for Dynamic Performance

RESISTIVE
REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING
SWITCHING

+5 V
VCC
1N4933 33
MJE210 +125 V
L
0.001 mF MR826*
33 1N4933 RC
TEST CIRCUITS

5V TUT
PW 2N222 IC Vclamp
RB RB SCOPE
1k 2
DUTY CYCLE ≤ 10% 68 *SELECTED FOR ≥ 1 kV
tr, tf ≤ 10 ns 1k IB 5.1 k
+5 V VCE D1
51
1N493 1k T.U.T.
3 2N2905 -4.0
V
0.02 mF 270 47 100
MJE200
NOTE
PW and VCC Adjusted for Desired IC 1/2 W
RB Adjusted for Desired IB1 - VBE(off)

VCC = 125 V
CIRCUIT
VALUES

Coil Data:
GAP for 200 mH/20 A VCC = 20 V RC = 62 W
Ferroxcube Core #6656
Lcoil = 200 mH Vclamp = 300 Vdc D1 = 1N5820 or Equiv.
Full Bobbin (~16 Turns) #16
RB = 22 W

OUTPUT WAVEFORMS
+10 V 25 ms
tf CLAMPED
TEST WAVEFORMS

IC tf UNCLAMPED ≈ t2 t1 ADJUSTED TO
IC(pk) OBTAIN IC 0
Lcoil (IC ) Test Equipment
t pk
t1 tf t1 ≈ Scope−Tektronics
VCC -8 V
475 or Equivalent
VCE
VCE or
Lcoil (IC )
pk tr, tf < 10 ns
t2 ≈ Duty Cycle = 1.0%
Vclamp Vclamp
t RB and RC adjusted
TIME t2 for desired IB and IC

1
r(t), TRANSIENT THERMAL RESISTANCE

0.7
D = 0.5
0.5
0.3
0.2
(NORMALIZED)

0.2
0.1
0.1 P(pk)
ZqJC(t) = r(t) RqJC
0.07 0.05
RqJC = 1.67°C/W MAX
0.05 D CURVES APPLY FOR POWER
0.02
0.03 PULSE TRAIN SHOWN t1
READ TIME AT t1 t2
0.02 0.01
TJ(pk) - TC = P(pk) ZqJC(t)
SINGLE PULSE DUTY CYCLE, D = t1/t2
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1k
t, TIME (ms)

Figure 10. Typical Thermal Response [ZqJC(t)]

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 MJE13005G

SAFE OPERATING AREA INFORMATION

The Safe Operating Area Figures 11 and 12 are specified ratings for these devices under the test conditions shown.

10 4
5 TC ≤ 100°C

IC(pk) , COLLECTOR CURRENT (AMP)

IC, COLLECTOR CURRENT (AMP)

IB1 = 2.0 A
2 500 ms
5 ms 3
1 dc

0.5
2 VBE(off) = 9 V
0.2 1 ms

0.1
0.05 1
MJE13005 5V
0.02
3V
MJE13005 1.5 V
0.01 0
5 7 10 20 30 50 70 100 200 300 500 0 100 200 300 400 500 600 700 800
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 400 VCE, COLLECTOR-EMITTER CLAMP VOLTAGE (VOLTS)

Figure 11. Forward Bias Safe Operating Area Figure 12. Reverse Bias Switching Safe Operating Area

FORWARD BIAS REVERSE BIAS

There are two limitations on the power handling ability of For inductive loads, high voltage and high current must be
a transistor: average junction temperature and second sustained simultaneously during turn−off, in most cases,
breakdown. Safe operating area curves indicate IC − VCE with the base to emitter junction reverse biased. Under these
limits of the transistor that must be observed for reliable conditions the collector voltage must be held to a safe level
operation; i.e., the transistor must not be subjected to greater at or below a specific value of collector current. This can be
dissipation than the curves indicate. accomplished by several means such as active clamping, RC
The data of Figure 11 is based on TC = 25_C; T J(pk) is snubbing, load line shaping, etc. The safe level for these
variable depending on power level. Second breakdown devices is specified as Reverse Bias Safe Operating Area
pulse limits are valid for duty cycles to 10% but must be and represents the voltage−current conditions during
derated when TC ≥ 25_C. Second breakdown limitations do reverse biased turn−off. This rating is verified under
not derate the same as thermal limitations. Allowable clamped conditions so that the device is never subjected to
current at the voltages shown on Figure 11 may be found at an avalanche mode. Figure 12 gives the complete RBSOA
any case temperature by using the appropriate curve on characteristics.
Figure 13.
T J(pk) may be calculated from the data in Figure 10. At
high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown.

SECOND BREAKDOWN
0.8 DERATING
POWER DERATING FACTOR

0.6 THERMAL
DERATING
0.4

0.2

0
20 40 60 80 100 120 140 160
TC, CASE TEMPERATURE (°C)

Figure 13. Forward Bias Power Derating

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 MJE13005G

PACKAGE DIMENSIONS

TO−220AB
CASE 221A−09
ISSUE AF

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEATING
−T− PLANE 2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
B F C BODY AND LEAD IRREGULARITIES ARE
T S
ALLOWED.

INCHES MILLIMETERS
4 DIM MIN MAX MIN MAX
A 0.570 0.620 14.48 15.75
Q A B 0.380 0.405 9.66 10.28
C 0.160 0.190 4.07 4.82
1 2 3 U D 0.025 0.035 0.64 0.88
F 0.142 0.161 3.61 4.09
H G 0.095 0.105 2.42 2.66
H 0.110 0.155 2.80 3.93
K J 0.014 0.025 0.36 0.64
Z K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
L R Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
V J S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
G U 0.000 0.050 0.00 1.27
D V
Z
0.045
---
---
0.080
1.15
---
---
2.04
N
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR

SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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