SAMWIN SW634

General Description
Features This power MOSFET is produced in CHMC with
advanced VDMOS technology of SAMWIN. This
N-Channel MOSFET
technology enable power MOSFET to have better
BVDSS (Minimum) : 250 V
characteristics, such as fast switching time, low on
RDS(ON) (Maximum) : 0.45 ohm resistance, low gate charge and especially
ID : 8.5 A excellent avalanche characteristics. It is mainly
Qg (Typical) : 28 nc suitable for half bridge or full bridge resonant
PD (@TC=25 ) : 72 W topology like a electronic ballast, and also low
power switching mode power appliances.

w w w . D a t a S h e e t 4 U . c o m

Absolute Maximum Ratings

Symbol Parameter Value Units
VDSS Drain to Source Voltage 250 V

Continuous Drain Current (@Tc=25℃) 8.5 A

ID
Continuous Drain Current (@Tc=100℃) 6.5 A

IDM Drain Current Pulsed (Note 1) 34 A

VGS Gate to Source Voltage ±30 V

EAS Single Pulsed Avalanche Energy (Note 2) 250 mJ

EAR Repetitive Avalanche Energy (Note 1) 7.2 mJ

dv/dt Peak Diode Recovery dv/dt (Note 3) 5.0 V/ns

Total Power Dissipation (@Tc=25℃) 72 W

PD
Derating Factor above 25℃ 0.57 W/℃

TSTG,TJ Operating junction temperature &Storage temperature -55 ~ +150 ℃

TL Maximum Lead Temperature for soldering purpose, 1/8 from Case 300 ℃
for 5 seconds.

Thermal Characteristics

Value Units
Symbol Parameter
Min Typ Max
RθJC Thermal Resistance, Junction-to-Case - - 1.73 ℃/ W

RθCS Thermal Resistance, Case-to-Sink - 0.5 - ℃/ W

RθJA Thermal Resistance, Junction-to-Ambient - - 62.5 ℃/ W

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Electrical Characteristics (Tc=25℃ unless otherwise noted)

Value
Symbol Parameter Test Conditions Units
Min Typ Max
Off Characteristics
BVDSS Drain- Source Breakdown Voltage VGS=0V,ID=250uA 250 - - V

△BVDSS/△ Breakdown Voltage Temperature ID=250uA,referenced to 25℃ - 0.544 - V/℃

Tj coefficient

VDS=250V, VGS=0V
IDSS Drain-Source Leakage Current - - 1 uA
VDS=200V, Tc=125℃

Gate-Source Leakage Current VGS=30V,VDS=0V - - 100 nA

IGSS
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Gate-Source Leakage Reverse VGS=-30V, VDS=0V - - -100 nA

On Characteristics
VGS(th) Gate Threshold Voltage VDS=VGS,ID=250uA 2.0 - 4.0 V

RDS(ON) Static Drain-Source On-state VGS=10V,ID=4.0A - - 0.45 ohm

Resistance

Dynamic Characteristics
Ciss Input Capacitance - - 1220

Coss Output Capacitance VGS=0V,VDS=25V, f=1MHz - - 130 pF

Crss Reverse Transfer Capacitance - - 32

Dynamic Characteristics
td(on) Turn-on Delay Time - - 38

tr Rise Time VDD=125V,ID=8.5A - - 38

RG=50ohm ns
td(off) Turn-off Delay Time - - 150
(Note4,5)
tf Fall Time - - 80

Qg Total Gate Charge - 28 36

VDS=200V,VGS=10V, ID=8.5A
Qgs Gate-Source Charge - 5 - nc
(Note4,5)
Qgd Gate-Drain Charge (Miller Charge) - 10 -

Source-Drain Diode Ratings and Characteristics

Symbol Parameter Test Conditions Min. Typ. Max. Unit.
IS Continuous Source Current Integral Reverse D - - 8.5
p-n Junction Diode
in the MOSFET A
ISM Pulsed Source Current G - - 34
s
S
VSD Diode Forward Voltage IS=8.5A,VGS=0V - - 1.5 V

trr Reverse Recovery Time IS=8.5A,V GS=0V, - 170 - ns

dIF/dt=100A/us
Qrr Reverse Recovery Charge - 0.85 - uc
NOTES
1. Repeativity rating: pulse width limited by junction temperature
2. L=5.6mH,IAS=8.5A,VDD=50V,RG=0ohm, Starting TJ=25℃
3. ISD≤8.5A,di/dt≤100A/us,VDD≤BVDSS, Starting TJ=25℃
4. Pulse Test: Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature. 2/6
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 SAMWIN SW634
VGS
top: 15V
10V
9V
8V
7V
6V
1 5.5V
10 5V
bottom:4.5V

0
10 4.5V

-1
10
-1 0 1
10 10 10
Vds,Drain-to-Source voltage [V]
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Fig 1. On-State Characteristics Fig 2. Transfer Characteristics

1.00

1
0.75 10

VGS=20V

VGS=10V
0.50

0
150 25
10

0.25

Note:
1.vGS=0v
2.250us test
-1
0.00 10
0 2 4 6 8 10 12 14 16 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
ID, Drain Current[A]] VSD,Source-Drain Voltage[V]

Fig 3. On Resistance Variation vs. Fig 4. On State Current vs.

Drain Current and Gate Voltage Allowable Case Temperature

12

10
VDS=200V
VDS=125V

8
VDS=50V

0
0 5 10 15 20 25
QG,Total Gate Charge [nC]

Fig 5. Capacitance Characteristics Fig 6. Gate Charge Characteristics

(Non-Repetitive)

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 SAMWIN SW634
1.2 3.0

2.5

Drain to source on resistance

1.1

RDS(ON) (Normalized)
2.0

1.0 1.5

1.0

0.9
Note: 0.5 Note:
1.VGS=0V 1.VGS=10V
2.ID=250uA 2.ID=4A
0.8 0.0
-100 -50 0 50 100 150 200 -50 0 50 100 150
o o
TJ,Junction Temperature [ C] TJ,Junction Temperature[ C]
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Fig 7. Breakdown Voltage Variation vs. Fig 8. On-Resistance Variation vs.
Junction Temperature Junction Temperature
2
10 9
Operation In This Area
Limted By RDS(ON) 8

10us 7
100us
ID ,Drain Current[A]
ID , Drain Current[A]

1
10 6
1ms
5

10ms
4

0
10 3

Note: 2
1.Tc=25 C
2.Tj=150 C 1
3.Single Pulse
-1
10 0
0 1 2 3
10 10 10 10 25 50 75 100 125 150
o
VD,Drain-Source Voltage[V] Tc,Case Temperature [ C]

Fig9. Maximum Safe Operating Fig 10. Maximum Drain Current

Vs. Case Temperature

0
1 0 D = 0 .5

0 .2

0 .1

-1 0 .0 5
1 0
0 .0 2
0 .0 1 S IN G L E P U L S E
N o t e :
o
1 .Z J C
(t)= 1 .7 3 C / w M a x
2 .D u t y F a c to r ,D = t 1 /t2
3 .T j-T c = P D M * Z J C
(t)
-2
1 0
-5 -4 -3 -2 -1 0 1
1 0 1 0 1 0 1 0 1 0 1 0 1 0
t 1
,S q u a r e W a v e P u ls e D u r a tio n ( s e c )

Fig 11. Transient Thermal Response Curve

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 SAMWIN SW634

VGS
Same Type
as DUT
Qg
50KΩ 10V
200nF
300nF
VDS Qgs Qgd
VGS

DUT
1mA

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Charge

Fig 12. Gate Charge test Circuit & Waveforms

RL
VDS
VDD VDS
90%
(0.5 rated VDS)

10V DUT Vin 10%

RG
Pulse
Generator tf
td(on) tr
ton td(off)
toff

Fig 13. Switching test Circuit & Waveforms

L
VDS 1 BVDSS
EAS= --- LLIAS2---------------
VDD 2
BVDSS-VDD

BVDSS
IAS
RG
VDS(t)
VDD ID(t)
DUT
10V
tp Time

Fig 14. Unclamped Inductive Switching test Circuit & Waveforms

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 SAMWIN SW634

+
DUT
VDS

__

Driver
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RG VDD
Same Type
as DUT

VGS
● dv/dt controlled by RG
● Is controlled by pulse period

VGS Gate Pulse Width

D = ---------------------------
(Driver) Gate Pulse Period 10V

IFM,Body Diode Forward Current

di/dt
IS
(DUT)

IRM

Body Diode Reverse Current

VDS
(DUT)
Body Diode Recovery dv/dt

Vf VDD

Body Diode
Forward Voltage Drop

Fig 15. Peak Diode Recovery dv/dt test Circuit & Waveforms

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