SEMICONDUCTOR

RoHS
400D(R)Series RoHS
Nell High Power Products
Standard Recovery Diodes
Stud Version, 400A

FEATURES
Ceramic housing
Alloy diode
Glass passivated chip
Popular series for rough service
Stud cathode and stud anode version
RoHS compliant
Glass-metal seal
Designed and qualified for industrial level

TYPICAL APPLICATIONS
Welders
Power supplies
Motor controls Glass-metal seal (Metric stud)
Battery chargers
General industrial current rectification
DO-205AB(DO-9)

PRODUCT SUMMARY
IF(AV) 400A

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUE UNIT

400 A
I F(AV) TC
120 ºC
50 HZ 8000
I FSM A
60 HZ 8380
50 HZ 320
I 2t kA 2 s
60 HZ 291
V RRM Range 800 to 1600 V

TJ -40 to 200 ºC

ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
VRRM, MAXIMUM VRSM, MAXIMUM lRRM, MAXIMUM
TYPE VOLTAGE
REPETITIVE PEAK NON-REPETITIVE
NUMBER CODE AT TJ = 200 °C
REVERSE VOLTAGE PEAK REVERSE VOLTAGE
mA
V V
08 800 900
400D( R ) 12 1200 1300 15
16 1600 1700

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 SEMICONDUCTOR
RoHS
400D(R)Series RoHS
Nell High Power Products

FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS 400D( R ) UNIT
Maximum average forward current 400 A
I F(AV) 180° conduction, half sine wave
at maximum case temperature 120 °C
Maximum RMS forward current I F(RMS) DC at 110°C case temperature 628 A
t = 10ms No voltage 8000
Maximum peak, one cycle forward, t = 8.3ms reapplied 8380
I FSM A
non-reptitive surge current t = 10ms 6720
100%V RRM
reapplied Sinusoidal half wave,
t = 8.3ms 7039
initial T J = T J maximum
t = 10ms No voltage 320
t = 8.3ms reapplied 291
Maximum l²t for fusing I 2t kA 2 s
t = 10ms 100%V RRM 226
t = 8.3ms reapplied 206

Maximum l²√t for fusing I 2√t t = 0.1 ms to 10 ms, no voltage reapplied 3200 kA 2√s

Maximum value of threshold voltage V F(TO) 0.85 V

T J = T J Maximum
Maximum value of forward slope resistance rF 0.50 mΩ
Maximum forward voltage drop V FM l pk = 1500A, T J = 25°C 1.60 V

FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUE UNIT

Maximum junction operating and

T J, T stg - 40 to 200 ºC
storage temperature range

Maximum thermal resistace, R thJC DC operation 0.15

junction to case
K/W
Maximum thermal resistance
R thCS Mounting surface, smooth, flat and greased 0.04
case to heatsink

Maximum allowable mounting torque Not lubricated threads 37

(+0% , -20%) Nm
Lubricated threads 28
Ceramic housing 240
Approximate weight g
Glass-metal seal 220

(JEDEC) see dimensions -

Case style DO-205AB (DO-9)
link at the end of datasheet

RthJC CONDUCTION
CONDUCTION ANGEL SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDUCTIONS UNITS
180° 0.020 0.013
120° 0.023 0.023
90° 0.029 0.031 T J = T J maximum K/W
60° 0.042 0.044
30° 0.073 0.074
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC

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 SEMICONDUCTOR
RoHS
400D(R)Series RoHS
Nell High Power Products

Fig.1 Current ratings characteristics Fig.2 Current ratings characteristics

Maximum Allowable case temperature (°C)

Maximum average forward power loss (W)

200 200
190
190
180
170 Conduction Angle
180
Conduction Period
160 170
150
160 30°
140 60°
130 150
90°
120 140 120°
110 30°
60° 180°
130 DC
100 90°
120° 120
90 180°
80 110
0 50 100 150 200 250 300 350 400 450 0 100 200 300 400 500 600 700

Average forward current (A) Average forward current (A)

Fig.3 Forward power loss characteristics

550
Maximum Average foward power lass (W)

500 180°
120°
R th
0.

450
1

90° 0.
SA
K/

2
W

400 K/
=0

60° W
RMS Limit 0.3
.04

350 30° K/W

K/W

0.4
300 K/W
-D
elt

250 0.6
aR

K/W
200
1 K/
150 W

100 Conduction Angle 1.8 K

/W
50
0
50 100 150 200 250 300 350 400 450 30 50 70 90 110 130 150 170 190

Average Forward Current (A) Maximum Allowable Ambient Temperature (°C)

Fig.4 Forward power loss characteristics

Maximum Average foward power loss (W)

800
DC
700 180°
R th

120°
600
SA

90°
=

0.
0.

1
K/
1

500 60° W
K/
W

30° 0.2
-D

400 K/
W
el
ta

0.3
R

K/W
300 RMS Limit 0.4
K/W
0.6 K
200 /W
1 K/W
Conduction Period
100 1.8 K/W

0
50 150 250 350 450 550 650 30 50 70 90 110 130 150 170 190

Average Forward Current (A) Maximum Allowable Ambient Temperature (°C)

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 SEMICONDUCTOR
RoHS
400D(R)Series RoHS
Nell High Power Products

Fig.5 Maximum non-repetitive surge current Fig.6 Maximum non-repetitive surge current

9000

Peak half sine wave forward current (A)

8000
Peak half sine wave forward current (A)

At any rated load condition and with Maximum non repetitive surge current
rated vrrm applied following surge. 8000 versus pulse train duration.
7000
lnitial T J =190°C lnitial T J = 190°C,@50Hz
7000 no voltage reapplied
@ 60 Hz 0.0083 s
6000 @ 50 Hz 0.0100 s rated vrrm reapplied
6000

5000 5000

4000
4000
3000
3000
2000

2000 1000
1 10 100 0.01 0.1 1

Number of equal amplitude half cycle Pulse train duration (S)

current pulses(N)

Fig.7 Forward voltage drop characteristics Fig.8 Thermal lmpedance Z thJC characteristic
Transient thermal lmpedance Z thJC (K/W)

10000 1
lnstantaneous forward current (A)

Stead State Value

R thJC = 0.15K/W
(DC Operation)
0.1

1000
T J = 25°C
0.01
T J = 190°C

100 0.001
0.001 0.01 0.1 1 10

Instantaneous forward voltage (V) Square wave pulse duration (S)

ORDERING INFORMATION TABLE

Device code 400 D R 12 B M

1 2 3 4 5 6

1 - Current rating, 400 = 400A

2 - D = Standard Recovery Diode
3 - None = Stud normal polarity (cathode to stud)
R = Stud reverse polarity (anode to stud)
4 - Voltage code × 100 = VRRM (see Voltage Ratings table)
5 - None = DO-9, Ceramic housing type with insulated tube
B = DO-9, Glass-Metal Seal Type
C = DO-9, Ceramic housing type with insulated tube,
”inner pressure contact structure”
6 - None = standard device, 3/4”-16UNF-2A
M = Metric device, M20 x 1.5 , with insulated tube

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 SEMICONDUCTOR
RoHS
400D(R)Series RoHS
Nell High Power Products

DO-205AB (DO-9), Ceramic housing

4.4(
0.17
) Ma
x.

C. S. 35mm 2

Red silicon rubber tube

Black for 400D

Shrinking Tube ( Red for 400DR
)

400D 400D(R)

AII dimensions in millimeters (inches)

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 SEMICONDUCTOR
RoHS
400D(R)Series RoHS
Nell High Power Products

DO-205AB (DO-9), GLASS - METAL SEAL

4.4(
0.17
) Ma
x.

C. S. 35mm 2

400D 400D(R)

AII dimensions in millimeters (inches)

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 SEMICONDUCTOR
RoHS
400D(R)Series RoHS
Nell High Power Products

DO-205AB (DO-9), GLASS - METAL SEAL (Metric stud)

4.4(
0.17
) Ma
x.

C. S. 35mm 2

Red silicon rubber tube

Black for 400D

Shrinking Tube ( Red for 400DR
)

400D 400D(R)

AII dimensions in millimeters (inches)

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 SEMICONDUCTOR
RoHS
400D(R)Series RoHS
Nell High Power Products

DO-205AB (DO-9), Ceramic housing

(lnner Pressure Contact Structure)

19.0(0.75) Max.

4.0(0.16)Max.
Ø8.5(0.34)Max.

in .
.8 6 ) M
2 2 .0 (0
Brown silicon
rubber tube
C.S. 35mm 2
(0.054 s.i.)
Flexible leads
200.0(7.87)±5.0(0.20)

Black color for 400D

Shrinking tube
Red color for 400DR
38.5(1.52) Max.

3.5(0.14)

Ø28.3(1.11)
27.5(1.08) Max.

14.5(0.58) Max.

2.0(0.08)

3/4”-16UNF-2A
(M20 X 1.5 for Metric Device)
Ø30.0(1.18)
SW 32

400D 400D(R)

Ø35.0(1.38) Max.

AII dimensions in millimeters (inches)

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