Regulation - 2010 Reg. No.

K.S.RANGASAMY COLLEGE OF TECHNOLOGY, TIRUCHENGODE - 637 215

(Autonomous)
B.E. / B.TECH. END SEMESTER EXAMINATION – NOVEMBER / DECEMBER - 2013

ELECTRONICS AND COMMUNICATION

Branch Semester 7
ENGINEERING

Course code 10 EC 713 Max. marks 100

& Title MICROWAVE ENGINEERING Duration 3 Hours

Answer all the questions 5 X 20 = 100 Marks

1. (a) What is the significance of S-parameters? Derive the relation of Z, Y and ABCD
parameters with S-parameter. (10)

(b) With a neat diagram, explain the construction of four port circulator using two hole
directional couplers and phase shifters. (6)

(c) With a neat diagram, explain the working of magic tee. (4)

(OR)

2. (a) Isolator is a non-reciprocal device. Justify the statement with the help of its
construction and principle of working. (10)

(b) Is it possible to construct a matched, lossless, reciprocal three port junction? Justify
your answer. (5)

(c) What is matched termination? Why is the third port of the directional coupler
matched terminated? (5)

3. (a) With a neat diagram, explain the working of two cavity Klystron Amplifier and derive
expressions for output current and output power. (12)

(b) A TWT operates with the following parameters : Beam Voltage V 0 = 5KV, beam

current I 0 = 45mA, Characteristic impedance of helix Z 0 = 20Ω, circuit length N = 50,

frequency f = 12GHz. Determine (i) the gain parameter C (ii) the output power gain
A p in dB (iii) all four propogation constants. (8)

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 (OR)

4. (a) Discuss the principle of operation and the significance of travelling wave tubes. (4)

(b) What are crossed field tubes? Why are they called so? (4)

(c) With a neat diagram, discuss the working of cylindrical magnetron and derive the
Hull cut of equation. (12)

5. (a) A Si bipolar transistor has the following parameters: Collector current = 8mA;
CE current gain factor = 140; operating temperature = 300 0 K; area of cross
section = 10 −8 cm 2 ; Compute mutual conductance, diffusion capacitance, electron
diffusion coefficient, input conductance and resistance. (10)

(b) Discuss the operation of Gunn diode with the two valley model theory. (10)

(OR)

6. (a) Write the principle behind the working of Avalanche Transit Time Devices. Illustrate
it in IMPATT diodes and derive the output power and efficiency of IMPATT diodes. (12)

(b) Derive the expression for negative-resistance parametric amplifier. (8)

7. (a) Find the attenuation for a microstrip line using a copper strip of width 0.5mm, a
spacing of 0.5mm above the ground plane, an alumina substrate with ε r = 9.7 and a
loss tangent of 2x10 −4 . The strip thickness T is 0.02mm. The frequency of operation
is 4 GHz. The effective dielectric constant εe = 6.556 and characteristic impedance
Zc = 49.44Ω. Wavelength of operation is 7.5cm. Attenuation caused by dielectric
loss is 1.52x10-3 Np/wavelength. W/H = 1; W/T =25. (10)

(b) Discuss in detail the various losses in microstrip lines. (10)

(OR)

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8. (a) Write short notes on:

(i) Coplanar strip lines (5)

(ii) Shielded strip lines (5)

(b) Write in detail about MMIC fabrication techniques. Give an example. (10)

9. (a) A slotted line with a short circuit termination measures two successive minima at
25.3cm apart. When an unknown load is connected, the VSWR is 3.1 and the
minimum occurs at 16.5cm position. Find (i) voltage reflection coefficient at the load,
(ii) the load impedance when the characteristic impedance of the line is 50 ohm. (10)

(b) With a neat block diagram, explain the Reflectometer method of impedance
measurement. (10)

(OR)

10. (a) With a neat block diagram, explain the measurement of Q factor from transmitted
power. (10)

(b) Discuss the slotted line method for measurement of VSWR with a neat block
diagram. (10)

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