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DATA SHEET
TDA8561Q
2 × 24 W BTL or 4 × 12 W
single-ended car radio power
amplifier
Product specification 1999 Jun 30
Supersedes data of 1997 Sep 22
File under Integrated Circuits, IC01
Philips Semiconductors Product specification
2 × 24 W BTL or 4 × 12 W single-ended
TDA8561Q
car radio power amplifier
ORDERING INFORMATION
TYPE PACKAGE
NUMBER NAME DESCRIPTION VERSION
TDA8561Q DBS17P plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm) SOT243-1
1999 Jun 30 2
Philips Semiconductors Product specification
2 × 24 W BTL or 4 × 12 W single-ended
TDA8561Q
car radio power amplifier
BLOCK DIAGRAM
V P1 VP2
5 13
non-inverting 1 mute switch
input 1 Cm
60
kΩ TDA8561Q
VA 6
output 1
2
kΩ
18 kΩ power stage
mute switch Cm
60
kΩ
inverting 3
input 2 VA 8
output 2
2
kΩ
18 kΩ power stage
VP
14 mode
select
stand-by
switch
switch
stand-by
reference
VA voltage
PROTECTIONS
thermal mute
15 kΩ short-circuit switch
x1
16 diagnostic
supply voltage 4 output
ripple rejection 15 kΩ
mute
reference
voltage
non-inverting 17
mute switch Cm
input 4
60
kΩ
VA 12
output 4
2
kΩ
18 kΩ power stage
mute switch Cm
60
kΩ
inverting 15
10
input 3 VA output 3
2
kΩ
18 kΩ power stage
input
reference
voltage
2 9 7 11
GND1 GND2 MEA858 - 1
1999 Jun 30 3
Philips Semiconductors Product specification
2 × 24 W BTL or 4 × 12 W single-ended
TDA8561Q
car radio power amplifier
PINNING
INV 3 15
V DIAG 16
INV 4 17
MEA859 - 1
1999 Jun 30 4
Philips Semiconductors Product specification
2 × 24 W BTL or 4 × 12 W single-ended
TDA8561Q
car radio power amplifier
1999 Jun 30 5
Philips Semiconductors Product specification
2 × 24 W BTL or 4 × 12 W single-ended
TDA8561Q
car radio power amplifier
t
short-circuit over the load
V16
20 ms
VP
t
50 µs
TEMPERATURE DETECTION
When the virtual junction temperature Tvj reaches 150 °C, pin 16 will be active LOW.
OPEN-COLLECTOR OUTPUT
Pin 16 is an open-collector output, which allows pin 16 of more devices being tied together.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
vP positive supply voltage
operating − 18 V
non-operating − 30 V
load dump protection during 50 ms; tr ≥ 2.5 ms − 45 V
IOSM non-repetitive peak output current − 6 A
IORM repetitive peak output current − 4 A
Tstg storage temperature −55 +150 °C
Tamb operating ambient temperature −40 +85 °C
Tvj virtual junction temperature − 150 °C
Vpsc AC and DC short-circuit safe voltage − 18 V
Vpr reverse polarity − 6 V
Ptot total power dissipation − 60 W
1999 Jun 30 6
Philips Semiconductors Product specification
2 × 24 W BTL or 4 × 12 W single-ended
TDA8561Q
car radio power amplifier
THERMAL CHARACTERISTICS
In accordance with IEC 747-1.
SYMBOL PARAMETER VALUE UNIT
Rth j-a thermal resistance from junction to ambient in free air 40 K/W
Rth j-c thermal resistance from junction to case (see Figs 6 and 7) 1.3 K/W
0.2 K/W
MEA860 - 2
MEA861 - 1
case 0.2 K/W
case
Fig.6 Equivalent thermal resistance network; Fig.7 Equivalent thermal resistance network;
BTL application. single-ended application.
1999 Jun 30 7
Philips Semiconductors Product specification
2 × 24 W BTL or 4 × 12 W single-ended
TDA8561Q
car radio power amplifier
DC CHARACTERISTICS
VP = 14.4 V; Tamb = 25 °C; measured in Fig.8; unless otherwise specified.
Notes
1. The circuit is DC adjusted at VP = 6 to 18 V and AC operating at VP = 8.5 to 18 V.
2. At 18 V < VP < 30 V the DC output voltage ≤0.5VP.
1999 Jun 30 8
Philips Semiconductors Product specification
2 × 24 W BTL or 4 × 12 W single-ended
TDA8561Q
car radio power amplifier
AC CHARACTERISTICS
VP = 14.4 V; RL = 4 Ω; f = 1 kHz; Tamb = 25 °C; unless otherwise specified.
1999 Jun 30 9
Philips Semiconductors Product specification
2 × 24 W BTL or 4 × 12 W single-ended
TDA8561Q
car radio power amplifier
1999 Jun 30 10
Philips Semiconductors Product specification
2 × 24 W BTL or 4 × 12 W single-ended
TDA8561Q
car radio power amplifier
VP
handbook, full pagewidth mode
switch 100 2200
10
diagnostic nF µF
kΩ
14 16 5 13
TDA8561Q
220 nF TDA8564Q
non- inverting 1
input 1 6
60
kΩ
8
3
inverting input 2
2 60
ground (signal)
kΩ
reference
voltage
supply voltage 4 9
not connected
ripple rejection
60
kΩ
220 nF
non-inverting 17
input 4 12
60
kΩ
10
15
inverting input 3
7 11
MEA862 - 2
1999 Jun 30 11
Philips Semiconductors Product specification
2 × 24 W BTL or 4 × 12 W single-ended
TDA8561Q
car radio power amplifier
VP
handbook, full pagewidth mode
switch 100 2200
10
kΩ
nF µF
14 16 5 13
TDA8561Q
220 nF TDA8564Q
non- inverting 1
input 1 6
1000 µF
60
kΩ
220 nF 8
inverting 3
input 2 1000 µF
2 60
ground (signal)
kΩ
reference
4 voltage
supply voltage 100 1/2Vp
ripple rejection µF 60 9
not connected
kΩ
non-inverting 17
input 4 12
220 nF
1000 µF
60
kΩ
220 nF 10
inverting 15
input 3 1000 µF
7 11
MEA863 - 2
1999 Jun 30 12
Philips Semiconductors Product specification
2 × 24 W BTL or 4 × 12 W single-ended
TDA8561Q
car radio power amplifier
VP
handbook, full pagewidth mode
switch 100 2200
10
kΩ
nF µF
14 16 5 13
TDA8561Q
220 nF TDA8564Q
non- inverting 1
input 1 6
60
kΩ
220 nF 8
inverting 3
input 2
2 60
ground (signal)
kΩ
reference
9 voltage
not connected VP
2
60 4
kΩ 100
D1
µF
non-inverting 17
input 4 12
220 nF
60
kΩ
220 nF 10
inverting 15
input 3
7 11
MEA864 - 2
2200
µF
power ground (substrate)
(1) When short-circuiting the single-ended capacitor, the dissipation will be reduced due to diode D1.
1999 Jun 30 13
Philips Semiconductors Product specification
2 × 24 W BTL or 4 × 12 W single-ended
TDA8561Q
car radio power amplifier
10 kΩ 100 Ω
mode
select
switch
47 µF
100 kΩ
MGA708
MGA709
10 2
THD
(%)
10
(1)
10 1
(2)
(3)
10 2
10 2 10 1 1 10 P o (W) 10 2
(1) f = 10 kHz.
(2) f = 1 kHz.
(3) f = 100 Hz.
1999 Jun 30 14
Philips Semiconductors Product specification
2 × 24 W BTL or 4 × 12 W single-ended
TDA8561Q
car radio power amplifier
MGA710
50
handbook, full pagewidth
Po
(W)
40
(1)
30
(2)
20 (3)
10
0
8 10 12 14 16 VP (V) 18
MGA711
20
Po
(W)
18
16
14
12
10
10 10 2 10 3 10 4 f (Hz) 10 5
1999 Jun 30 15
Philips Semiconductors Product specification
2 × 24 W BTL or 4 × 12 W single-ended
TDA8561Q
car radio power amplifier
MGA712
1
THD
(%)
(1)
10 1 (2)
(3)
10 2
10 10 2 10 3 10 4 f (Hz) 10 5
(1) Po = 0.1 W.
(2) Po = 1 W.
(3) Po = 10 W.
MGA713
50
RR
(dB)
(1)
60
(2)
70
80
(3)
90
100
10 10 2 10 3 10 4 f (Hz) 10 5
(1) On condition.
(2) Mute condition.
(3) Standby condition.
1999 Jun 30 16
Philips Semiconductors Product specification
2 × 24 W BTL or 4 × 12 W single-ended
TDA8561Q
car radio power amplifier
MGA714
100
handbook, full pagewidth
Iq
(mA)
92
84
76
68
60
8 10 12 14 16 VP (V) 18
SINGLE-ENDED APPLICATION
MGA715
10 2
THD
(%)
10
1 (1)
(2)
10 1
(3)
10 2
10 2 10 1 1 10 P o (W) 10 2
1999 Jun 30 17
Philips Semiconductors Product specification
2 × 24 W BTL or 4 × 12 W single-ended
TDA8561Q
car radio power amplifier
MGA716
15
handbook, full pagewidth
Po
(W)
12
9 (1)
(2)
6
(3)
0
8 10 12 14 16 VP (V) 18
MGA717
10
Po
(W)
0
10 10 2 10 3 10 4 f (Hz) 10 5
1999 Jun 30 18
Philips Semiconductors Product specification
2 × 24 W BTL or 4 × 12 W single-ended
TDA8561Q
car radio power amplifier
MGA718
1
THD
(%)
(1)
1
(2)
10
10 2
10 10 2 10 3 10 4 f (Hz) 10 5
(1) Po = 0.1 W.
(2) Po = 1 W.
MGA719
30
handbook, full pagewidth
α cs
(dB)
40
50
60
70
80
10 10 2 10 3 10 4 f (Hz) 10 5
1999 Jun 30 19
Philips Semiconductors Product specification
2 × 24 W BTL or 4 × 12 W single-ended
TDA8561Q
car radio power amplifier
BTL APPLICATION
MGA720
14
P tot
(W)
12
10
2
0 4 8 12 16 20 24 Po (W) 28
Fig.23 Total power dissipation as a function of output power; VP = 14.4 V, RL = 4 Ω (1 channel driven BTL or
4 channels in single-ended mode).
1999 Jun 30 20
Philips Semiconductors Product specification
2 × 24 W BTL or 4 × 12 W single-ended
TDA8561Q
car radio power amplifier
PACKAGE OUTLINE
DBS17P: plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm) SOT243-1
non-concave
Dh
x
D
Eh
d A2
j E
L3
L Q
c v M
1 17
Z e1 w M m e2
bp
e
0 5 10 mm
scale
17.0 4.6 0.75 0.48 24.0 20.0 12.2 6 3.4 12.4 2.4 2.1 2.00
mm 10 2.54 1.27 5.08 4.3 0.8 0.4 0.03
15.5 4.2 0.60 0.38 23.6 19.6 11.8 3.1 11.0 1.6 1.8 1.45
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
95-03-11
SOT243-1
97-12-16
1999 Jun 30 21
Philips Semiconductors Product specification
2 × 24 W BTL or 4 × 12 W single-ended
TDA8561Q
car radio power amplifier
SOLDERING The total contact time of successive solder waves must not
exceed 5 seconds.
Introduction to soldering through-hole mount
packages The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
This text gives a brief insight to wave, dip and manual specified maximum storage temperature (Tstg(max)). If the
soldering. A more in-depth account of soldering ICs can be printed-circuit board has been pre-heated, forced cooling
found in our “Data Handbook IC26; Integrated Circuit may be necessary immediately after soldering to keep the
Packages” (document order number 9398 652 90011). temperature within the permissible limit.
Wave soldering is the preferred method for mounting of
through-hole mount IC packages on a printed-circuit Manual soldering
board.
Apply the soldering iron (24 V or less) to the lead(s) of the
package, either below the seating plane or not more than
Soldering by dipping or by solder wave 2 mm above it. If the temperature of the soldering iron bit
The maximum permissible temperature of the solder is is less than 300 °C it may remain in contact for up to
260 °C; solder at this temperature must not be in contact 10 seconds. If the bit temperature is between
with the joints for more than 5 seconds. 300 and 400 °C, contact may be up to 5 seconds.
Suitability of through-hole mount IC packages for dipping and wave soldering methods
SOLDERING METHOD
PACKAGE
DIPPING WAVE
DBS, DIP, HDIP, SDIP, SIL suitable suitable(1)
Note
1. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board.
DEFINITIONS
1999 Jun 30 22
Philips Semiconductors Product specification
2 × 24 W BTL or 4 × 12 W single-ended
TDA8561Q
car radio power amplifier
NOTES
1999 Jun 30 23
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Printed in The Netherlands 545002/04/pp24 Date of release: 1999 Jun 30 Document order number: 9397 750 06053