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40 Diode forward direction
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ELECTRONICS

Published by
Chonan Technical Service Training Center

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BASIC ELECTRONIC

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BASIC ELECTRONIC

FOREWORD

This service-training booklet has been prepared for service technicians of


authorized distributor to familiarize them with vehicle basic electronic. It is our
intention to increase the level of skill and knowledge of service personnel to
enable effective and efficient problem diagnosis and repair.

December. 2003 Printed in Korea


Published by Chonan Technical Service Training Center

ⓒ copyright by KIA Motors


All right reserved.
Chonan Technical Service Training Center

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BASIC ELECTRONIC

http://training.kmc.co.kr
training@kmc.co.kr

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BASIC ELECTRONIC

CONTENTS

1. General 7 8. Thermistor 45

2. Compositions/essence of electricity 8 8.1 NTC type 45

3. Conductor & nonconductor 9 8.2 PTC type 46

4. Semiconductors 11 9. Photoconductive cell 47

4.2 Semiconductor material 12 10. Piezo-electric element 48

4.3 Classification of semiconductor 13 11. Hall effect 49

5. Diode 17 12. Integrated circuit 51

5.1 Diode general 17 12.1 Integrated circuit general 51

5.2 Diode usage & symbol representation 17 12.2 Analog I.C 52

5.3 Diode operation 18 12.3 Digital I.C 53

5.4.Characteristic of diode 20 12.4 Various logic circuits 54

5.5 Rectification operation of diode 21 13. Microcomputer 59

5.6 Example of diode use in automobile 23 14. To understand electronic circuit 63

5.7 Diode check method by using a m-meter 25 APPENDOX 67

6. Special type of semiconductor diode 26

6.1 Zener diode 26

6.2 Photo diode 28

6.3 LED (Light emitting diode) 29

7. Transistor 31

7.1 What’s transistor? 31

7.2 Basic operation of transistor 32

7.3 Judgment of good/bad transistor 42

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1. General
Today in automobile there are essentially used application fields of electricity and electronic beginning
from switch for simple on /off of lamp to many equipments of engine management system (EMS ) ,
antilock brake system (ABS ) , transmission control system (TCS ) , airbag, instrumentation system,
body electrical system (BCM), etc. requiring microcomputer control.

Because of use of so many sophisticated electrical equipments and electronic parts, there come forth
also many electronic defects in comparison to traditional mechanical defects as for car trouble
causes. Accordingly learning the basic knowledge of electricity and electronic seems exigent subject
for automobile maintenance and service.
.
Here it is hoped to become opportunity to understand basic principle and to learn how they apply in
automobile, apart from the complicated structure or any academic theoretic.

And it is hoped to be a little help in more efficient maintenance and trouble repair..

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2. Compositions and essence of electricity


Every material is composed of molecules each of which is in turn chemically composed of aggregates
of atoms.

Example: water molecule (H2O) = two hydrogen atoms (H2) + one oxygen atom (O)

M Orbit

Electron
K Orbit

Proton

Neutron Atomic
nucleus
L Orbit

Atom relationship model


As the above figure, electrons are quickly turning around nucleus in conformity with respective
orbits as the earth and planets are turning around sun .
Only a certain number of electrons can exist in each electron orbit (K: 2, L: 8, M: 18, . . . ) while
each element has its characteristic number of electrons (e . g . hydrogen 1, carbon 6, oxygen 8,
. . . ).

Generally nucleus has positive electricity (+) and electron has negative electricity (-) while these
two have mutually attractive character so that atom becomes electrically neutral (positive electricity
quantity = negative electricity quantity). Because attractive force from atomic nucleus to electrons
of outermost orbit (valence electrons) is the weakest , these electrons are easy to escape from orbit
due to external stimulus (heat , electricity, light , ...) and may move to other orbit , These electrons
got out of orbit are called free electrons which are essence of electricity. Movement of these free
electrons directly becomes electric current . Namely, it means that movement of these free
electron started signifies that electric current flows,

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3. Conductor & nonconductor


If materials are electrically classified , they may be divided into conductor which transmit electricity
well, nonconductor which do not transmit electricity and semiconductors in middle between the two
while these characteristics are determined by electronic configuration according to atomic structure of
material .
1) Conductor : where electricity flows well
Here fall most metals where free electrons may well move in the interior of material . Order of
good conductance of electricity : silver  copper  gold  aluminium  tungsten  zinc 
nickel ....
2) Nonconductor : where electricity does not flow well
It is called insulator where free electron is not easily generated e . g . ceramics, glass, rubber,
plastics, wood etc .
3) Semiconductor : which has medial characteristics between conductor and nonconductor
Here fall silicon (Si), germanium (Ge), selenium (Se) etc . which are used as raw material of
electronic part.

 As for automobile wiring, multistrand type is contained inside a clothing of cord where copper
(alloy) is mainly used as stuff material . Cord thickness is determined by electric current value,
load, continuity, temperature etc . The larger the electric current , the longer the cord and the
longer the electric current flow time , the thicker the electric cord shall be .

General Specification Table


Allowable
Area Strand No. of Electric 0.32 mm
Current
(mm ) Diameter Strands Wire OD
(A)
0.5 0.32 7 2.2 9
0.5 sq (Allowable
0.85 0.32 11 2.4 12 electric current =
9 A)
1.25 0.32 16 2.7 15
2 0.32 26 3.1 20
3 0.32 41 3.8 27
5 0.32 65 4.6 37
8 0.45 50 5.5 47
15 0.45 84 7.0 59
2.2 mm
20 0.8 41 8.2 84

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MEMO

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4. Semiconductor
4.1 What is semiconductor?
In material, there are conductors easy for electric current to flow and nonconductor difficult for
current to flow by the electronic property. Semiconductor denotes material of medial property
between conductor and insulator. Namely, here electric current is neither easy to flow as in
conductor nor difficult as in nonconductor. Semiconductor is material that has such peculiar electric
property. So semiconductor is material that has medial type character between conductor and
nonconductor.

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4.2 Semiconductor material


The specific resistance of copper used as electric conductor is 10 -6 Ωcm that is lowest and even the
specific resistance of Ni-Cr used as electric resistance wire is 10-4 Ωcm while these materials are
called conductors because they conducts electricity well . If specific resistance is more than 1010
Ωcm then little electricity is conducted there so that such material is used as insulator. Meanwhile
material in between such conductor and insulator, not belonging to conductor and nonconductor,
are called semiconductor where belong germanium and silicon used in manufacturing the diode
and transistor.

State Specific Resistance Material


10-6 Silver, copper
Platinum
-4
10 Nichrome
Carbon electrode
10-2
Conductor Pyrite
1
Germanium
102
Silicon
104
106 Copper dioxide
108

1010 Bakelite

1012

1013 Mica , diamond


Semiconductor 1014
1015 Glass
1016

1018 Quartz glass

Nonconductor 12 Chonan Technical Service Training Center


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Semiconductors play role of conductor or nonconductor according to specific condition (relationship


between voltage, electric current , temperature etc . ). The main elements that are most frequently
used are silicon (Si) and germanium (Ge) while such conductor of high purity is called as intrinsic
semiconductor. Silicon and germanium respectively have four electrons on outermost orbit .
Namely in their respective crystal structures, the form becomes that each atom shares its own four
electrons with its partner atom. Because of such covalent bond, the material becomes an electric
insulator and has little electrical utilization value so that it cannot independently be used as
semiconductor. Therefore it is used as a form of impurity semiconductor by adding small
proportional quantity of other element atoms to these intrinsic atoms of valence 4.

4.3 Classification of semiconductor


Semiconductor is largely constituted of two forms.
Here are iintrinsic semiconductor that does not utterly contain impurity in material crystal and
impurity semiconductor that is added of specific impurity material into intrinsic semiconductor in
order to improve conductivity.
Generally diode and transistor belong to this impurity semiconductor.
And this impurity semiconductor is also classified into two according to role of added impurity
material .
Roles of impurity material are to increase in semiconductor the number of
- Increase free electron of semiconductor inside
- Increase hole of semiconductor inside

Therefore among impurity semiconductors, that added of impurity to increase the number of free
electron are called negative type semiconductor while that added of impurity to increase theOrbit
Outer block number
of hole are called positive type semiconductor. S
i

S S S
Si i i
i

S
i
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<Silicon atomic structure> <Silicon covalent bond>
BASIC ELECTRONIC

4.3.1 Intrinsic Semiconductor


▷ This is intrinsic semiconductor containing no impurity material at all in its crystal structure .
▷ Purity of intrinsic semiconductor has been refined about 99.999999999 % (over ten-nine) with 11
nine.
▷ For example germanium and silicon belong to this kind .

4.3.2 Impurity semiconductor


▷ This is impurity semiconductor added of specific impurity material into intrinsic semiconductor to
improve conductivity.
▷ General semiconductors of diode or transistor belong to this impurity semiconductor.
▷ Classification of impurity semiconductor
a. N type semiconductor is that added of impurity to increase number of free electron in
semiconductor.
b . P type semiconductor is that added of impurity to increase number of hole in semiconductor.

1) P Type Semiconductor

This is made by adding the material (Ga : gallium ; In : gallium ; B : boron ) having three valence
electron in intrinsic semiconductor. Though silicon has four outer layer electron, if these two kinds
of material meet each other, then silicon atom from these two kind of atoms cannot share one
electron so that electric current can flow easier while this vacancy in octet is called hole. And it is
called P (positive) type semiconductor because it assumes positive (+) electricity by electron
deficiency. When voltage is applied, electron fills the hole site so that the hole continuously moves
down, electric current is said to flow by means of hole in P type semiconductor.

Hole

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Structure of “P” type semiconductor
BASIC ELECTRONIC

2) N Type semiconductor
This is made by adding the material ( P : phosphorus ; As : arsenic ; Sb : antimony ) having five
outermost layer electron in intrinsic semiconductor. If element of valence 5 is added to bind with
silicon then one electron remains as surplus in octet so that electric conduction may be accomplished
easier by means of free activity of this remainder electron.
And it is called N (negative) type semiconductor because it assumes negative (-) electricity.
Electric current flows by means of electron in N type semiconductor (carrier : electron ) .

Superfluity electron

Structure of “N” type semiconductor

3) P-N Junction
If P type semiconductor and N type semiconductor are chemically bonded with each other, there is
made portion where carrier does not exist as hole and free electron are bonded together at narrow
part of junction surface. This junction surface is called depletion layer while semiconductor bonded
thus is called PN junction semiconductor or diode. Accordingly there exists electric charge of
different polarity from each other on either side of depletion layer and there is generated a little
P N is called electric potential barrier.
amount of electric potential difference which

Electron
Depletion15layer Chonan Technical Service Training Center
Hole
BASIC ELECTRONIC

MEMO

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5 Diode (Diode for rectifier circuit)


5.1 Diode general
Diode is semiconductor part substance flowing the electric current always in only one direction . As to
say, semiconductor is called as such because it has intrinsically this kind of property. Although
transistor is also a kind of semiconductor, diode specifically purports thus that electric current shall
flow always in only one direction . Silicon is most frequently used as semiconductor material whereas
besides there are used also germanium and selenium for this purpose

Anode(-) Cathode(+)

5.2 Diode usages and symbol representation


Main function of diode is to rectify electric current to flow it always in only one direction. But it is
also used in many other functions so that main functions may be summarized as follows : -
- Usage as electric current rectifier to change the alternating current to the direct current in
electric supply facilities
- Use as detector to take out signal from radio frequency
- Usage in switching to control electric current ON/OFF
- Prevention of backward current flow
- Usage in protective circuit
Besides it is used in variety of wide range according to diode sort and usage.

Anode Cathode

Diode symbol 17 Chonan Technical Service Training Center


Diode Polarity
BASIC ELECTRONIC

5.3 Diode operation


§ Forward diode for forward bias
§ Forward diode for backward bias

5.2.1 Forward diode for forward bias


Diode has form to have connected terminals on both sides of P-N junction semiconductor to have
characteristics to flow electric current always in only one direction .
In forward direction as in figure if positive (+) voltage is applied at P type semiconductor and
negative (-) voltage is applied at N type semiconductor, hole and electron repulse to electric source
so that electric potential barrier is lowered and also depletion layer is narrowed. Consequently hole
and electron may move to each other across junction surface. Accordingly electric current flows by
movement of hole and electron .

Depletion layer

Current flow

P N

<Occasion that supply forward voltage / Electric current is flowing>

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Forward direction circuit of diode


Lamp turns on because diode has been connected in forward direction in circuit below.

Anode(+) Cathode(-)

Lamp ON
Battery

5.2.2 Backward diode for reverse bias


This time let us in reverse direction apply negative (-) voltage at P type semiconductor and positive (+)
voltage at N type semiconductor. Then hole of P type semiconductor is attracted to negative (-) side
of electric supply while electron of N type semiconductor is attracted to positive (+) side of electric
supply. Consequently electric potential barrier is heightened and accordingly depletion layer is also
widened so that electron movement cannot arise between the two kinds of semiconductor.
As the result , electric current does not flow

Depletion layer

No current flow

P N

< Occasion that supply backward voltage / Electric current is not flowing >

Backward direction circuit of diode


Lamp turns off because diode has been connected in backward direction in circuit below.

Cathode(-) Anode(+)

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Lamp Off Chonan Technical Service Training Center
Battery
BASIC ELECTRONIC

5.4 Characteristic of diode


It can be seen that , when forward voltage is gradually increased from 0 V, electric current abruptly
flows if a certain voltage is reached. Namely electric current only becomes to flow if voltage is
applied over about 0.6~0.7 V (Ge diode: 0.3~0.4 V). And if backward voltage is applied, electric
current does not flow up to some voltage but abruptly flows at voltage over some definite value.
Voltage at this instant is called breakdown voltage.
Namely diode is broken down if it is connected in reverse direction and voltage above breakdown
voltage is applied.
ID(mA)

Forward direction

Breakdown voltage
VD(Volt)

Silicon: 0.6~0.7 volt

Backward direction
Characteristic curb of diode

Voltage-Current characteristics
Graph of Forward Voltage-Current Characteristics Diode : Diode Current Flow to Applied Voltage
When forward bias voltage is applied below 0.7 V → micro current flows : diode does not operate
When forward bias of threshold voltage of 0.7 V is applied → diode operation current flows : diode
operates

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Forward direction voltage characteristic of silicon junction diode

5.5 Rectification operating of diode


An alternating current signal may be rectified to a direct current by using characteristic of electric
current in diode to flow always in only one direction. Rectifier circuit may largely be classified into
half wave rectifier circuit and full wave rectifier circuit .

5.5. 1 Half -wave rectifier circuit


When applying an alternating current to the circuit , at moment when positive (+) side signal comes
in, electric current flows in forward direction, but at moment when negative (-) side signal comes in,
electric current does not flow because it becomes the reverse direction. This kind of circuit to flow
electric current for only one side is called half wave rectifier circuit .

Volt A.C
Time
Diode IR Input voltage

Input A.C Output R VR = D.C


Voltage Voltage Volt D.C
Time

Output voltage

Half -wave rectifier

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5.5.2 Full-wave rectifier circuit


Next for other device also when applying an alternating current to the circuit , electric current flows
through D1 and D4 during moment of positive (+) half cycle period of alternating current signal while
the current flows through D2 and D3 during moment of negative (-) half period. This kind of circuit to
flow electric current for both of half periods is called full wave rectifier circuit . ( *Although particularly
here is represented a full wave rectifier using a bridge, there are also full wave rectifier circuit using
the center tap of transformer, voltage doubler rectifier circuit etc . )

Volt
Time
Input
D2 D1 Voltage

V=
A.C
V=
D4 R D.C
D3
Volt
Time
Output
Voltage
Bridge circuit full-wave rectifier

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5.6 Example of diode use in automobile


◐ Alternator rectifier
AC voltage generated at stator coil is transformed to DC voltage across the diode
Voltage of A : DC 13.7 volts
Voltage of B: AC Pick-to-Pick voltage 13.7 volts × 2 = 27.4 volts
AC voltage of Pick-to-Pick voltage of B is outputted only in + voltage after passing the diode so that
only 1/2 voltage of 27.4 V is outputted.
Namely AC voltage after passing the forward diode is outputted in accordance with vanishing of –
voltage.

To Battery From fusible link From charging lamp

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Alternator internal circuit
BASIC ELECTRONIC

◐ Diode installed in relay to prevent surge voltage

B Motor
M
C A
Battery
Relay

Controllerㄱ

1) If power transistor of controller turns on, then the relay turns on .


2) Motor operates as the relay turns on .
3) When power transistor turns off in controller, a high surge voltage about 80volts
is instantaneously generated between A and B according to Lenz law so that it becomes
+ voltage.
4) If this surge voltage of 80 volts flows in the controller, the controller may be damaged .
5) In order to prevent this problem , diode is installed in the relay so that the surge voltage
generated between A~B shall digress in direction from A to C across diode to be
extinguished for controller damage prevention .

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◐ Diode connection in forward direction and reverse direction in electric circuit

Forward bias direction connection

Anode(+) Cathode(-)

Lamp ON
Battery

Backward bias direction connection

Cathode(-) Anode(+)

Lamp Off
Battery

5.7 Diode check method by using a multi-meter


If we had understood that diode is PN junction semiconductor where electric current would flow in
case of forward direction but would not flow in case of backward direction, we can judge it whether
good or bad in accordance with the following.
5.7.1 How to check by using a Digital Multi-Meter
1) Select resistance or diode mode for the select switch of digital meter.
2) It is normal if resistance value is small when red lead wire has been connected to diode anode
(+) and black lead has been connected to cathode (-).
3) And it will be rather good if resistance value is higher when connected inversely.
① Short condition : normal if value is near 0 ohm when measuring in forward direction a n d
backward direction .
② Open condition : normal if value is near infinity ohm when measuring in forward direction
Anode .
a n d backward direction Cathode Cathode Anode
++ - - - +
When checking
0 Ω by using digital multi meter = Normal
∞ Ωcondition
Red Black Red Black
lead lead lead lead
wire wire wire wire

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Resistance : ≒ 0 Ω Resistance : ∞ Ω
BASIC ELECTRONIC

5.7.2 How to check by using an Analog Multi-Meter


1) Select at resistance range × 100 for the select switch of analog multi meter.
2) It is normal if resistance value is small when black lead wire has been connected to diode
anode (+) and red lead has been connected to cathode (-).
3) And it will be rather good if resistance value is higher when connected inversely.
① Short condition : normal if value is near 0 ohm when measuring in forward direction a n d
backward direction .

② Open condition : normal if value is near infinity ohm when measuring in forward direction
a n d backward direction .

When checking by using analog multi meter = Normal condition

Anode Cathode Cathode Anode


- +
+ -
Red Black Red Black
lead lead lead lead
wire wire wire wire

Resistance : ≒ 0 Ω Resistance : ∞ Ω

6. Special type of semiconductor diode


Diodes are used for a number of purposes.
Voltage rectification, voltage regulation, and even light production are some of their various uses.

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Following is a brief description of some diode type you might encounter.

6.1 Zener diode


1) Zener diode symbol

Cathode(-) Anode(+)

2) Zener diode characteristic


When the diode is forward biased, it acts like reverse diode or a closed switch.
However, the zener diode has unique reverse bias qualities that make differ from the typical diode.
The zener diode goes in to reverse bias at various voltages. The amount of voltage required for
reverse bias varies according to the zener diode selected.
Some typical reverse bias voltages are 2.4V, 5.1V, 6.0V, 9.1V, 12.0V, ect.
At this point, when the applied voltage increased, the forward current increase.

This small reverse current flows until the diode reaches the zener breakdown point, V2 in figure.
At zener breakdown point, the zener diode is able to maintain a fairy constant voltage as the
current varies over a certain range.
Because of this attribute, the diode provides excellent voltage regulation.

+ Forward bias

Zener
breakdown
region

V2 0 Voltage
Voltage
remains
constance
over large
current
range

Reverse bias
Current

Zener diode characteristic


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3) Zener diode usage


An electronic device that can be used as a voltage regulator is the zener diode.

4) Example of circuit that use zener diode


- Zener diode breakdown voltage of circuit below is 12 V.
- Supply voltage to controller through C1 in circuit diagram below shall never exceed 12 V.
- If supply voltage exceeds 12 V then it is earthed through zener diode.
So, because current is extinguished through earth for voltage above 12 Volts any voltage above
12 Volts is not supplied to controller.

C1
Supply
Voltage
R3
R1 R4 Controller

Condenser
ZD 12Volts
TR

R2
Earth

Earth

6.2 Photo diode


1) Photo diode symbol

Cathode(-) Anode(+)
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2) Photo diode characteristic


Electric current flows if lighted on PN junction surface under condition where certain voltage is
applied in backward direction. And if light irradiation dose is changed, electric current changes in
proportion to the light quantity. Electric potential barrier is made on PN junction surface and
becomes greater if reverse voltage is applied so as to become a complete insulator. If light is
shed on PN junction surface under this condition, change arises on the junction surface.
Respectively electron and hole are activated by external light energy along with positive (+) ion in
N side area and negative (-) ion in P side area . Hole and free electron separated from respective
ions move along so that electric current gets to flow. Thus diode is used in light → electricity
transformation circuit .
Whence if voltage is maintained constant , electric current flowing in circuit gets proportional to the
light quantity received by element .

3) Example of circuit that use photo diode


- Photo diode has been connected in backward direction in circuit below.
- If light irradiates on photo diode, then because battery voltage is supplied, the lamp turns on .
- It is much used as a switching circuit .

Photo diode

Battery 12 volts Lamp

Photo diode circuit

6.3 LED (Light emitting diode)


1) Photo diode symbol

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Cathode(-) Anode(+)

2) Light emitting diode characteristic


This diode is that which illuminates as electric current flows by applying forward voltage at PN
junction diode. Its characteristics are as follows :
- It has longer life and electric power consumption is smaller in comparison to incandescent
electric lamp.
- Response is speedy.
- It illuminates even with low voltage of 2 ~3 V.
- Power consumption is small (about 0.05 W ) ,
- Response of turning on and off is quick (by unit of millionth second).
- As for illumination color, there are red, green, yellow etc. according to semiconductor material.

3) Example of circuit that use zener diode


- If switch is closed in circuit below, then electric current flows so that LED illuminates.
- As for role of resistance, it was used for voltage drop to apply a voltage of 3 V at LED.

LED

9 Volts. 3 Volts
Battery Switch

Photo diode circuit

4) Trip computer display using a LED

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7. Transistor
7.1 What’s transistor?
PNP type transistor is that where thin N type semiconductor in a semiconductor crystal has been
inserted between two P type semiconductors while NPN type transistor is that where thin P type
semiconductor has been inserted between two N type semiconductors. For symbols in
semiconductor, E denotes emitter terminal, B denotes base terminal and C denotes collector terminal

Each Part Symbol and Sorts of Transistor

Transistor according to association of semiconductor, there are PNP type and NPN type.

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And, transistor according to usage and type, following name is attached.


2SA××× ----- For high frequency transistor of PNP type
2SB××× ----- For low frequency transistor of PNP type
2SC××× ----- For high frequency transistor of NPN type
2SD××× ----- For low frequency transistor of NPN type

D: For low frequency


transistor of NPN type 

P type N type

Collector(C Emitter
N N Collector(C Emitter
) (E) P P
Type Type ) (E)
Type Type

Base (B) Base (B)

Collector(C Collector(C Emitter


Emitter
) ) (E)
(E)

Base (B) Base (B)

NPN type transmitter structure & PNP type transmitter structure &
symbol symbol >
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7.2 Basic operation of transistor


7.2.1 Basic operation of NPN type transistor
This type has been connected in opposite case to PNP type; but in this NPN type, as shown in
figure below, a few holes are supplied from positive pole of electric source so that these make a
small portion current of base current IB. And electrons that come from emitter as not having been
able to join with base holes move to collector side owing to V CB of collector side so that these make
collector current IC. Ordinarily 95~98 % among emitter current I E becomes IC but remainder 2 ~5 %
becomes IB.
NPN type

Emitter(E) Collector(C) Ib
[uA]

Current Ic
Base(B)
Current Ib

Vbe Vcb Ic [mA]

<Base electric current and


Forward bias of NPN type transmitter:
collector electric current>
Emitter's electron most moves by collector

7.2.2 Basic operation of PNP type transistor


If forward voltage VBE is applied between emitter and base, electric potential barrier in between PN
junction surface becomes low. And at P type side of emitter side, many holes are being generated
because impurity material concentration has been heightened, And as for base N side, because this is
very thin so that impurity material concentration becomes lower, there are only few electrons.
Accordingly holes in emitter cross over the electric potential barrier and enter the base side by
diffusion so as to vanish by bonding with a part of base electrons there. But because these few
electrons are continuously supplied by negative “-“ pole of electric source, these make the small base
current IB.
If backward voltage VC B is applied between base and collector, electric potential barrier is heightened
at PN junction surface so that electric current does not flow between base and collector.

Holes that could not join with base electrons but come from emitter now move to collector side owing
to VCB of collector side. These make collector current I C . Emitter holes are gradually supplied from

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BASIC ELECTRONIC

positive pole so that these make emitter current Ic. Accordingly most IE becomes IC but very little
portion becomes base current IB.

7.2.3 Amplification function of transistor


As we have already discussed above in `Basic Operation', most electron (no less than 95 %) move to
collector but only a few electrons (no more than 5 %) join with base hole. So as electron current and
electric current direction are ordinarily defined oppositely while emitter current I E is divided into
collector current I C and base current I B , the following equation holds :

IE = IB + IC I E  I B  I C
Like this, big collector current may be deduced from small base current so as to be called electric
current amplification while relationship (ratio) between I B and I C are called electric current
amplification factor (h F E ).

For calculation example, if I B is 1 mA and I C is 100 mA then h F E is 100. Namely it means


transistor that can amplify input signal by hundred times. ( * Electric current amplification rate of
transistor varies according to usage, sort etc . )

IC 100
hFE  ,   100
IB 1 hFE=100
C
B
Ic=100mA
E

Ib=1mA

Meanwhile in how to use transistor, there are three earth methods of emitter earth, base earth and
collector earth among which the Input
emitter earth method as in circuit above is most used.
Output
(Ib=uA)
.
C
B
Output
E (Ic=mA)
Input

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And generally amplification means that of alternating current component , which we shall deliberate in
the following example :
In circuit shown in figure here, if AC signal is applied between base and emitter, base current I B
flows only when it is in forward direction (same as in diode). Whence collector current I C also
appears as output while being amplified only of half wave. Namely transistor does not operate during
negative (-) half cycle because here it is in backward direction between base and emitter.

Here let us apply DC between base and emitter. If AC is applied onto DC, AC component is added
upon DC so as to appear like what is shown in the following figure.

Voltage at this time is called bias voltage. Now for the first time we can see completely amplified
output waveform. Also we may obtain the amplified AC waveform only if we remove DC component by
connecting a condenser at output terminal.

Output
Input
C (Ib=uA)
B

Input E

Output
(Ic=mA)
Bias voltage

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To avoid inconvenience of using two electric supplies due to bias voltage as in the depicted circuit ,
actual circuits use various forms adequate to purpose of each circuit by such as an electric current
feedback bias, a fixed bias using a resistance, condenser etc. on the supply electricity source
connected to the output terminal..

* For reference to say, there is limit area where collector current does not increase any more even
though transistor base current continues to increase so as to be called the saturation region.
Accordingly transistor 's amplification action is accomplished only in specific area where collector
current increases in accordance with base current increase so as to be called the active area .

So far we have learned electric current amplification but now let us think case of voltage amplification .
According to the above explanation, we learned that collector varies proportionately with base
current . Let us think this as a variable resistor to control electric current . Then we can think the
following equivalent circuit .

E
E
R
Output (Eo) R
Output
C (Eo)
B
Current Ic Input current
Current Ic
E (Ib=uA)

<Equivalent circuit>
Output Current
(Ic=mA)

Output voltage
(Eo=E-(Ic*R)
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Under condition as above, output voltage to the base input waveform shows up reversely as may be
seen in figure. It is explained as total voltage E = voltage drop between collector and emitter (Eo) +
voltage drop due to resistance R (Ic × R). Namely, if electric current Ic increases, voltage drop due
to resistance R also increases so that the output voltage Eo decreases. (Output voltage Eo = E – (Ic
× R))

Now let us learn base earth and collector earth methods along with transistor 's switching action .
Base earth circuit
Method of base earth is type of circuit as shown in figure to take base as earth and apply input signal
to emitter. Output
E
C

B
Input

<Base earth circuit


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If there is no electric potential difference between emitter and base, emitter current does not flow as
well as their flows no electric current at collector where voltage is applied in backward direction
through resistance. If forward voltage is applied between emitter and base as in circuit shown by
figure, collector current may also flow through resistance.

In this case, because sum of base current and collector current is equal to emitter current , ratio of
collector current to emitter current is below 1 so that electric current is not amplified.
In case of voltage amplification, if we suppose for example that 10mA flows in emitter, then some
1mA and 9mA flows in base and collector respectively so that voltage drop occurs, through
resistance, in collector that is the output .
Accordingly it becomes 9mA × resistance [kΩ] = output voltage so there is accomplished voltage
amplification to the input signal .

Collector earth circuit


Method of collector earth is type of circuit as shown in figure to take collector as eart h , send input
signal to base and send output from emitter.
In emitter earth circuit , collector current greatly varies according to base current while variation of
value of load resistance connected to collector does not give large effect to electric current . But in
collector earth circuit , because forward voltage is applied between emitter and base for output circuit ,
emitter current (from collector to emitter) flows so as to be applied at load resistance as it is .
Accordingly emitter current is controlled by small base current as well as emitter current varies directly
also by load resistance variation .

As above, we learned three types of earth methods according to terminals used in common . Among

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them the most general and usually used method is emitter earth method whereas to summarize it
may be explained by the following characteristics table.
.
Characteristic of earth methods

Emitter Earth Collector Earth


Item Base Earth Circuit
Circuit Circuit
Electric current
High Low Mid
amplification degree

Voltage amplification High Mid Low

Electric power amplification High Mid Low

Input impedance Mid Low High

Output impedance Mid High Low

Phase of output to input Antiphase Inphase Inphase

High frequency
Bad Best Good
characteristics

To understand amplification circuit that use transmitter

R1=1㏀
M
Collector
Motor
12V D235 (NPN TR)
Base
Emitter

1~100Ω
variable resistor

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Circuit description
- The R1's resistance changes NPN transistor base and bias that is approved to emitter voltage to 3
volts. There is serving resistance
- Variable resistor is thing to control NPN transistor's bias voltage by 0 ~ 3 volt
- That is, become transistor's base and emitter bias voltage high if variable resistance value is high,
and resistance value two. If is low, bias voltage becomes low
- Therefore flowing electric current is passed much to collector and emitter according to bias voltage
- Therefore, can control turning number of motor according to position of variableness resistance
passing as motor's electric current by bias voltage differs.
IC
I E  I B  IC hFE 
IB
hFE:The electric current amplification rate,
IB:Base current,
Ic:Collector current)

7.2.3 Switching function of transmitter


In explanation of amplification action, we learned that if to electrify between emitter and collector, it
would do making the base current Ib to flow. Namely it will do if we supply base current up to
saturation state where collector current will not almost increase any more. (Nevertheless in small
signal amplification circuit or ordinary home appliances, usually use is made of amplification action
not in saturation region but in active area . ) We can turn on / off circuit between emitter and collector
by on / offing the base current Ib under this condition . This is called transistor 's switching action
among transistor 's amplification action..

We can make role like of relay if using transistor 's switching action as shown in figure.

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Batt Batt
ON/OFF input signal

ON/OFF
C
Load Input signal Load
Current
B Ic
E

Switching relay Switching transmitter

Transistor 's base current corresponds to relay 's excitation current so that transistor may act as the
relay while not using mechanical contact as in relay 's contact point . And if load increases then
electric current Ic also increases, whereas, when we cannot
From supply
ignitionsufficient
key switchelectric current by a
transistor, we can make use of electric current amplification by means of connecting transistors in
multistage in accordance to load capacity.
So transistor 's switching action has the following advantages to the relay.
- Switching speed is fast (more than thousand times per second).
- Operation is stable and there is no chattering when on / offing the contact point as that in relay
because there is no mechanical contact . It is small type with less electric power consumption .
It has longer life than mechanical relay.

To understand transistor switching circuit


1. In below circuit, when ignition key switch does ON, power is supplied to the ignition coil.
2. If supply power to power TR Base from ECM through Pin No23 ignition coil of electric
current passes by ground G11.
3. Again ECM transmitter's baseGround
power G11
when coil's electric current is shut off because
connection between collector and emitter becomesPin No if
open 23do Off in coil high tension
generate become.

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7.3 Judgment of good / b ad transistor


As may be seen in figure, it will be fine if we think transistor to have been connected with part of
Collector
emitter and base considered asEmitter Collector
a PN junction Emitter considered as
diode and part of base and collector
another diode..

Base Base

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Base Technical Service Training Center
NPN Transmitter
BASIC ELECTRONIC

1. When multi-meter measures between B~E and B~C in forward direction under normal condition,
it is electrified ( showing ordinarily some hundred mV in case of digital meter but a low resistance
value in case of analog type meter). Inversely when measured in reverse direction, it is not
electrified so that there is little change in indication value of multi-meter (by which there is
displayed a voltage same as for case when measuring rod was not connected in case of digital
meter while there is displayed an approximately infinite resistance value is displayed in case of
analog meter).

2. Next if also measured for interval of E~C forwardly and backwardly with the measuring rod, there
is little change in indication value of multi-meter for both of the reciprocal cases because it is not
electrified for both cases. Whereas in some cases according to transistor sort and characteristic
when red (+) rod is connected to collector and black (-) rod is connected to emitter (in case of
NPN, but reversibly in case of PNP), quite a high resistance value may be displayed even though
it would not be infinite ( so namely a little current may flow).

For reference to say, when testing transistor or diode, if measuring under condition where it has been
connected to circuit , it may be affected by connected circuit resistance value, it is desirable to
measure under condition isolated from circuitry. And in case where generally transistor or diode has
been broken , it is displayed as primarily short circuit form .

Polarity distinction of transistor


1. In case of using analog multi-meter.
1) Put mode switch in Analog multi meter at R100 or R1000 with in measurable range.
2) First connect a lead wire to any pin in transistor. Then connect left 2 terminals in
transistor respectively, using other lead wire.
3) At this moment, if the direction becomes CW, which resistance measuring becomes
nearly OΩ, black lead wire connection becomes base line in NPN transmitter and red

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lead wire connection becomes base line in PNP transmitter.


4) If you set mode switch in R1000 at circuit tester, result in CW direction after measuring
other two pins’ resistance respectively, red lead wire connection becomes collector in
NPN and black lead wire becomes collector in PNP.

Multi Meter Multi Meter 1 2


3
InBase
case of 2SC1815 transistor (NPN type transistor for
high frequency)
- Right side lead : Base
- Center side lead : Collector 1 : Collector
- Left side lead : Emitter 2 : Emitter
3 : Base

Emitter Base

Collector

In case of 2SD880 transistor (NPN type transistor for high


frequency)
- Right side lead : Emitter
- Center side lead : Collector
2. In case of find polarity to use transistor's- lead wire.lead : Base
Left side
When saw flat side that printed of part name.

Base Emitter

Collector
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8. Thermistor

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To semiconductor element that use change of resistance according to temperature, there are NTC
thermistor and PTC thermistor
8.1 NTC (Negative Temperature Coefficient) thermistor)
- Characteristic
If temperature rises, there is characteristic that resistance decreases

Resistance

Temperature

- Usage in car
Engine coolant temperature sensor, Air intake temperature sensor, and Low fuel-warning sensor

Engine coolant temperature sensor

- To understand circuit usage PTC thermistor.


NPN transistor's bias voltage depends on NTC thermistor in below circuit
If temperature rises, voltage between base and emitter is raised.
Therefore, TR does ON and lamp turned “ON”.

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Lamp

R1
12 Volts Battery

NPN TR

NTC
Thermistor

8.2 PTC (Positive Temperature Coefficient) thermistor)


- Characteristic
If temperature rises, there is characteristic that resistance increases
- Usage in car
Central door lock actuator
- To understand circuit that use NTC thermistor.
In below circuit, lamp turned ON when switch ON.
If excess current is passed to ramp, heat by excess current is occurred to thermistor
At this time, thermistor's resistance increases and decreases electric current.
Therefore, prevent over current in circuit.

Lamp Thermistor

Battery
Switch

9. Photoconductive cell
According to brightness of light, value of resistance changes.(increase or decrease) .
Material that convey light is Cds (Cadmium sulfide) and CdSe (Cadmium selenide)

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- Characteristic
Resistance decreases if brightness of light is strong, and there is Characteristic that resistance
increases if light becomes feeble

KΩ
10,000

1,000

100

10

1 10 100 1,000 Lux

- Usage in car
Auto light sensor, FATC air conditioning system
- To understand circuit that use CDS
1) If transmitter1 does ON, lamp turned ON.
2) For TR1 does ON, TR2 must do ON
3) TR2'sR1=10㏀ R2=4.7㏀
ON operates according to cds's resistance value
Lamp
4) If receive a lot of raises in CDS, TR2 does ON because TR2's bias voltage rises
5) If quantity of light decreases, TR2's bias voltage decreases, because cds's resistance
cds R3=1㏀ 12 volts
increases lamp Off BATT.

NPN TR1
2SC372
NPN TR2
R4=4.7 2SC372

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Circuit that use Photoconductive cell
BASIC ELECTRONIC

10. Piezo-electric element


If receive pressure, if electromotive force happen, and supplies voltage, there is special quality that
cause transformation
- Material : Titan acid, Barium
- Usage in car : Knock Sensor
- Knock sensor waveform

Knock sensor

a. Cylinder Pressure Signal


b. Filtered Cylinder Pressure Signal

c. Knock Sensor Signal

11. Hall effect

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When you put hall IC in magnetic field at concentric position with current flowing, both hall IC end can
produce some voltage.
In the following picture, if you put any conduct in magnetic field and make some current flow through
this, A1 and A2 can produce some voltage out.

A1

Iv

Current “I”

A2

If you simulate the magnetic field then the output voltage between A1 and A2 becomes on and off.
When tone wheel destroy the magnetic filed the output voltage between A1 and A2 in the following
picture, becomes on. When this tone wheel reaches without any damage to the magnetic field the
output voltage becomes off

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- Usage in car
CMP sensor, CKP sensor, Speed sensor ect.

- Signal waveform

Volt

Time

Hall IC type CMP sensor

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12. Integrated Circuit (I.C)


12.1 Integrated circuit general
An integrated circuit or IC is several hundreds of resistors, transistors and other elements formed
on a substrate to function as if they were single device. When reading a circuit with an IC,
understanding of the operating conditions as indicated by the timing chart or table is important. In
this chapter, how a circuit with an IC should be read will be described.

Type of I.C
Classification by Scale of Integration
○ SSI (Small Scale Integrated Circuit) : Less than 100 elements
○ MSI (Medium Scale Integrated Circuit) : 100 to 1,000 elements
○ LSI (Large Scale Integrated Circuit) : 1,000 to 100,000 elements
○ VLSI (Very Large Scale Integrated Circuit) : 100,000 or more elements

Classification by Application and Structure


▣ Analog IC I.C amplifying or controlling analog quantity (continuous quantity)
Output signal always changes linearly with the input signal
This type of IC’s is widely used in units using analog circuits.

Input Output

▣ Digital IC I.C that performs switching only. According to input ON/OFF signal conditions, the
output is obtained as ON/OFF switching signal.

Input Output

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Features of I.C.
○ Size reduced to minimum by integration
○ High reliability thanks to integrated structure
○ Low price thanks to volume production
○ Low power consumption

12.2 Analog I.C


The IC shown here is one called comparator.
“a” is the power supply terminal and “b” is the ground terminal, both are required to supply power to
the comparator for its operation but are not directly associated with the operation itself.
The comparator compares the potential at terminal c and terminal d and in this operating conditions
shown, it gives output va[v] at point e only when the potential at point c is higher than the potential at
point d.
Of the two input terminal voltages, one that remains constant is called the reference voltage and one
that changes is called the comparison voltage which of the two input terminals has the reference
voltage can be known from the circuit connected to the comparator.

++
A (Va)

c +

d -
Operating conditions
Output(Va volt) is made when Vc<Vd
Vc
Vd Output(Va volt) is not made when Vc≤Vd

b (Vb)

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12.3 Digital I.C


Logic circuit
In a digital circuit, two signals are used, that is, signal with high voltage (H) and signal with low
voltage (L) or presence of signal and absence of signal.
And as a convention, these two signals are represented by “1” and “0”.
For example, when the transistor is off in this figure, Vce is 12V and this state of voltage is taken as
“1”.
When the switch is set to ON to turn on the transistor, VCE becomes 0V and this state is taken as
“0”.
In a digital circuit unlike an analog one, various information is expressed by combination of only two
signals that can have only two states, namely, “1” or “0”.
A logic circuit is a circuit that gives an output “1” or “0” when input signal that is combination of “1”
and “0” is applied.

Switch

12 volts
Battery Vce

Vce OFF OFF OFF


12 volts

0 volts
ON ON ON TR

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12.4 Various logic circuits


12.4.1 AND circuit (logical product)
And operation is the operation that gives a result only when all conditions are met such as “the
brake warning lamp lights up when the ignition switch is ON and the parking brake switch is ON”.
Namely, the AND circuit is a circuit of which output signal becomes “1” when the input signals are
all “1”.

Representation Actual Circuit Logic Symbol Input/Output relation

A B C

1 1 1
1 0 0
0 1 0
0 0 0

This figure shows an example of AND circuit using transistors. When both input signals A and B
are 1(H), 1(H) voltage is obtained at output C.
For output C to be high, it is necessary that both Tr 2 be off and for these two transistors to be off,
it is necessary that Tr1 and Tr2 be on. And for Tr1 and Tr2 to go on, high (H) voltage must be
applied to inputs A and B so that base current may flow to both transistors.

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12.4.2 OR circuit (logical sum)


OR operation is the operation that gives a result when at least one condition among various
conditions is met such as “when any one door is opened, the door ajar indicator lamp lights up”
Namely, the OR circuit is a circuit whose output becomes “1” when at least one input signal is “1”.
In contrast to the AND circuit whose output is “1” when all inputs are “1”, the OR circuit may be
considered as a circuit whose output is “0” when all inputs are “0”.

Representation Actual Circuit Logic Symbol Input/Output relation

A B C

1 1 1
1 0 1
0 1 1
0 0 0

This figure shows an example of OR circuit using transistors.


When either input A or input B is “1” output C becomes “1”.

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12.4.3 NOT Circuit (negation)


The NOT circuit is a circuit whose output is inverse of the input, such as when the input signal is
“1”, the output signal is “0” or vice versa.
For this reason, the NOT circuit is sometimes called an inverter.

Representation Actual Circuit Logic Symbol Input/Output relation

A B C

1 1 1
1 0 1
0 1 1
0 0 0

Note : The relationship between transistor base voltage (VBE) and collector voltage (VCE) is NOT
relation.
Namely, when the base voltage is high, the transistor goes on and hence the collector voltage
becomes low. On the other hand, when the base voltage is low, the transistor goes off and
hence the collector voltage is high.

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12.4.4 NAND and NOR circuits


The NAND circuit is an AND circuit followed by a NOT circuit and for this reason, it is called
NAND (meaning NOT + AND)

Logic Symbol Input/Output relation

Input Output

A B Y

L L H
L H H
H L H
H H L

12.4.5 The NOR circuit is an OR circuit following by a NOT circuit.


In either circuit, the output is the inverse of the AND or OR circuit.

Logic Symbol Input/Output relation

Input Output

A B Y

L L H
L H L
H L L
H H L

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MEMO

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13. Microcomputer
The microcomputer is a kind of computer. Let’s now review briefly the history of development of
computers.
The first computers ever produced were mechanical ones using gears and other mechanical
parts, which was followed by electric ones using relays and them by electronic computers using
vacuum tubes. An electronic computer using vacuum tubes was large enough to occupy an entire
room of a building, with an many as 20,000 tubes in use. These vacuum tubes were then
replaced by transistors and then by integrated circuits (IC). The degree of integration of these Ics
then became increasingly higher, developing to LSI (large scale integration) and VLSI (very large
scale integration) With these developments, computers also changed from vacuum type to
transistor type to IC type and then to current LSI type, with their size becoming increasingly
smaller.
Let’s now see how microcomputers were born.
When development was under way to make electronic portable calculators more compact and
more sophisticated, every design change required redesign of LSI, which required very large cost
and time. This problem was coped with by the use of LSI that allowed free change of internal
functions by program. Namely, with such LSI, you can change the programs to allow
development of new calculators. And such LSI whose internal functions could be freely changed
by program modification was a microcomputer. In other words, a microcomputer is an LSI with
functions that are described in the following.

13.1 Three elements of microcomputer


A microcomputer consists of three elements, CPU (central processing unit) memory and I/O
(input/output unit)

13.2 I/O unit (Input / output unit)


Through this unit, the microcomputer communicates with external units (sensor, switch, actuator,
etc.) In the case of ECU for instance, the intake air amount is input to the microcomputer as a

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sensor signal and the result of calculation by the CPU is output from this I/O as the fuel injection
amount control signal.

13.3 Memory
The memory stores the program (set of directions for operation, judgment, data exchange, etc.),
data (reference voltage for ECU air/fuel ratio comparison, for instance) and signals that are input
while the CPU is busy with calculation processing.
The memory is generally classified into the following two types.

13.4 ROM (Read Only Memory)


A Memory for read only. In the case of a microcomputer for automotive application, only one fixed
program needs execution and for this reason, the program is permanently stored in a ROM. The
ROM is nonvolatile. The contents are held permanently even after power is turned off. This
nature makes ROM optimum device for storing programs.

13.5 RAM (Random Access Memory)


Memories that can be write in and read from. It is used for temporarily storing data. Normally it is
volatile and the contents stored are lost once the power is turned off.
Note : Nonvolatile RAM is also available that is called NVRAM. It is used in electronic odometer,
for example.

13.6 CPU (Central Processing Unit)


The part of a computer, that performs operation, interpretation and data exchange according to
the program stored in the memory.
Take the O2 sensor of ECM as an example. When the voltage signal indicating the air/fuel ratio
arrives at the I/O unit from the O2 sensor, the CPU makes processing according to the program
stored in the memory in the following manner.
The CPU compares this signal with the reference voltage stored in the memory and if the signal
voltage is higher, it judges that the air/fuel ratio is higher than the theoretical air/fuel ratio and
outputs the signal for lowering the fuel injection rate to the I/O. Then, the I/O sends out this signal
(to the injector) so that the fuel injection rate is reduced.

13.7 Types of microcomputer


The microcomputers can be divided into two types depending on whether separate LSI
implements its three elements or all these elements are implemented by a signal LSI.
The former type is called a multi chip microcomputer and the latter type is called a one hip

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microcomputer. The microcomputers used in a car mostly belong to the latter category.

13.8 Basic operation of microcomputer


The basic internal operation of a microcomputer is addition and subtraction of binary numbers
and the internal circuits are basically logic circuits. Namely, the microcomputer is essentially
digital IC and its internal circuit can be represented by logical symbols. The internal circuits of a
microcomputer for automotive application are complicated but they are relatively easy to
understand if you have basic knowledge of logic circuits.

Note : Binary number


The numbers 0 through 9 we use in our daily life are decimal numbers. Binary numbers, on the
other hand, consist of only two numbers of 0 and 1. These two numbers correspond, as you will
be aware, to the two signals of a logic circuit. In other words, a microcomputer is a digital IC that
processes binary data by its logic circuit.

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13.9 Microcomputer in a system


15.9.1 Use as a controller
In a system formed by transistor, IC, LSI and other individual parts, a microcomputer is
introduced as a controller. Typical examples are TV and radio sets and other household electric
and electronic appliances.
15.9.2 Use as a computer
Application with emphasis placed on its calculation function.
Personal computers and word processor belong to this category.

15.9.3 Combined use as controller and computer


Use of a microcomputer not for simple control of machine, but for optimum control.
Namely, the microcomputer judges conditions that are constantly changing and controls the
machine adequately. Microcomputers used in a car belong to this category.
15.9.4 Example of application
As an example of practical application of microcomputers to cars, the computer unit for ECM
will be descried.
This computer unit of ECM computers the optimum fuel supply rate to the engine, etc. with its
microcomputer.
Signals from various sensors are input via the I/O unit and calculated by the CPU according to
the program stored in ROM.
In memory (RAM), data and calculation results are stored temporarily as necessary.

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14. To understand electronic circuit


Blower motor speed control circuit

Blower Motor
IC ) .
R1 t a nce
M s is
1㏀
C bl e re
ria
IB (v a
B TR f VR
eo
Battery D235 alu
12volts g to v
E or din
cc
VR le da
1~100Ω nt rol
o
d is c
spee
or's
ot
e rm
lo w
t hat b
s
ro ces
l ain p
Ex p

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Room lamp delay control circuit

Diode 1 12Volts
R1
10D1 Battery
330Ω

Condenser it.
c ircu
33㎌/25Volts e
C bov
Room h in a
Lamp
i tc
B r sw
12Volts/1.2W
TR 1 f doo
Fo
R2 A1015 N/OF
Diode 2 O
10D1
15㏀ E i n g to C
r d
a cco
s
p erate B
p o
Door Switch am TR 2
oo ml R1 D471
t h at r
10㏀
o cess E
in pr
la
Exp

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Auto lighting circuit

R3 R1
10㏀ 4.7㏀ LED

m.
gra
cds R2 it di a
1㏀ cCircu Battery
bo ve 6V
s in a
a te B TR 1
per
o
lCamp 2SC372
D
h atBLE E
st TR 2
r o ces 2SC372
p
lain
Exp R4 E
4.7㏀

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MEMO

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APPENDIX

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Electric unit symbols

Quantity Unit Unit Symbol

Current Ampere A

Voltage Volt V

Electric Resistance Ohm Ω

Conductivity Mho

Coulomb C
Quantity of electricity
Ampere-hour Ah

Electric power Watt W

Joule J
Work of electricity
Watt-hour Wh

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Static capacitance Farad F

Electromagnetic induction
He H
Coefficient
Magnetic flux Weber Wb

Magnetic field intensity Ampere-turn AT/m

Magnetic force Meter

Magneto motive force Ampere-turn AT

Frequency Hertz Hz

Sound level Phon P

Attenuation or gain Decibel dB

Multiplier fraction Prefix Symbol

106 Mega or Meg M

103 Kilo K

10-1 Deci d

10-2 Centi c.

10-3 Mili Mm

10-6 Micro

10-9 Nano n.

10-12 Pico or Micro p.

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RELATION TO
PREFIX SYMBOL EXAMPLE
BASIC UNIT
MEGA M 1 000 000 8 M = 8 000 000

KILO K 1 000 20 Kv = 20 000 V

MILLI m .001 500 mV = .5 V

MICRO µ .000 000 001 500 µA = .000 5 A

NANO  .000 000 001 20 V = .000 000 02 V

PICO  .000 000 000 001 20 V = .000 000 000 02 V

71 Chonan Technical Service Training Center

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