(Chapter 2. Energy Bands and Carrier Concentration in Thermal Equlibrium « 45 > PROBLEMS (* DENOTES DIFFICULT PROBLEMS) FOR SECTION 2.2 BASIC CRYSTAL STRUCTURE 1. (a) What s the distance between nearest neighbors in silicon? {b) Find the numberof atoms per square centimeter inslcon inthe (100), (110, 11) planes. 2, Ifwe project the atoms in a diamond lattice ont the bottom surface with the heights of the atoms in unit ofthe lati constant shown in the Figuee below: Find the heights of the three atoms (X, ¥, 2) onthe igure 1 i 1 3. ind the maximum faction ofthe unt cell volume, which canbe fled by identical hard spheres inthe simple eubic face-centered cubie, and diamond latices. +4, Caleult the tetrahedral bond angle, the age between any pair ofthe four bonds « diamond latice, (Hint: epresent the four bond as vetors of equal length. What rust be the sum ofthe four vectors equal? Take components ofthis veetor equation along the rection of one ofthese vectors.) 5. Ifa plane has intercepts at 2, a, anda slong the three Cartesian coordinsts, where a : i the latice constant find the Miler sdices ofthe planes 6. (a) Caleulat the density of Gas (the latice constant of GaAs i 5:65 A, and the atomic sweghts of Ga and As are 69:72 and 74.92 ginal, respectively (b) gallium arsenide sample is doped wth tn the tn displaces glu atoms in the etal atic, are donors or acceptors formed? Why? the semiconductor n- or p-type? FOR SECTION 2.3. BASIC CRYSTAL GROWTH TECHNIQUE 1. (@) Does slcon or lion dx havea higher melting point? Why? (0) Whys a seed ental used for etl growth? { | (4) What to variables are used to control the dlameter ofthe silicon rod? FOR SECTION 2.5. ENERGY BANDS 8, The variation of silicon and GaAs bandgaps with temperature can be expressed as E,(T) = E, (0) aT*AT + B), where F, (0) = LIT eV, 73x 10+ eV/K, and B = 698 K for4G > Chapter 2. Energy Bands and Carrier Concentration in Thermal Equlibrium siligon; and (0) = L519 eV, er = 5.408 x 10- eV K, and B = 204 K for GaAs, Find the Dandgaps of $i and GaAs at 100 K and 600 K. FOR SECTION 26 INTRINSIC CARRIER CONCENTRATION +9, Derive Eq. 17. (Hint In the valence band, the probability of occupancy ofa state by « holes (1 - FE) 10, At oom temperature (900 K) the effective density of states inthe valence band is 2.66 x 10" em for silicon and 7x 10° em for gallium arsenide. Find the corresponding effec- tive masses of holes. Compare these masses with the free-electron mass. 11, Caleulate the loation of £; in silicon at liquid nitrogen temperature (77K), at room tem- perature (300 K), and at 100°C (lt my =1,0 mg and m, » 0.19 m,). Is it reasonable to assume that Es i the center ofthe forbidden gap? 12, Find the kinetic energy of electrons in the conduction band of a nondegenerate n-type semiconductor at 300 K. 13, (a) Fora free electron witha velocity of 10° ens, what is its de Broglie wavelength. (b) In Gas, the effective mass of electrons inthe conduction band is 0.068 ma, I'they have the same velocity find the corresponding de Broglie wavelength 114 The intrinsic temperature of a semiconduetor i the temperatures at which the intrinsic carrier concentration equals the impurity concentration. Find the intrinsic temperature {ora silicon sample doped with 10" phosphorus atoms‘em?. FOR SECTION 2.7, DONORS AND ACCEPTORS 15, A silicon sample at T= 300 K contains an acceptor impurity concentration of N= 10% can", Determine the concentration of donor impurity atoms that mast be added so that the silicon is n-type and the Fermi energy is 020 eV below the conduction band edge 16, Draw a simple fat energy band diagram for silicon doped with 10! arsenie atomsea at 71K, 800 K, and 600 K.Show the Fermi level and use the intrinsic Fermi level asthe energy reference. 17, Find the electron and hole concentrations and Fermi level in sion a 300 K (a fr 1 10" boron atoms/em* and (b) fr 3x 10! boron atom/em* and 2:9 x 10" arsenic atomsem. 15, A Sisample is doped with 10" As atomslem?. What the e at 300 K? Whereis Ey relative to? 19, Calculate the Fermi level of silicon doped with 10%, 10, and 10 phosphorus atomsfen?® at oom temperature, assuming complete ionization. From the calculated Fermi level check if the assumption of complete ionization i justified foreach doping. Assume that librium hole concentration the ionized donors is given by n = Np [1 - FUE) = 20, Foran n-type silicon sample with 10! em* phosphorous donor imputites and a donor level at Ep= 0.045 e¥ find the ratio ofthe neutral donor density tothe ionized donor den- sity at 77 K where the Ferm level is 0.0459 below the bottom of the conduction band. ‘The expression for ionized donors is given in Prob. 18.