ST TIP31C

NPN Silicon Epitaxial Planar Transistor

for power switching and amplifier applications

TO-220 Plastic Package

Absolute Maximum Ratings (Ta = 25 OC)

Parameter Symbol Value Unit

H
Collector Base Voltage VCBO 100 V
Collector Emitter Voltage VCEO 100 V

C
Emitter Base Voltage VEBO 5 V
Collector Current IC 3 A

E
Collector Current (Pulse) ICP 5 A
Base Current IB 1 A

T
Power Dissipation (Ta = 25 OC) Ptot 2 W
Power Dissipation (Tc = 25 C)
O
Ptot 40 W
Junction Temperature Tj 150 O
C

M
Storage Temperature Range Ts - 65 to + 150 O
C

E
Characteristics at Ta = 25 OC
Parameter Symbol Min. Max. Unit

S
DC Current Gain
at VCE = 4 V, IC = 1 A hFE 25 - -
at VCE = 4 V, IC = 3 A hFE 10 50 -
Collector Emitter Cutoff Current
ICES - 0.2 mA
at VCE = 100 V
Collector Emitter Cutoff Current
ICEO - 0.3 mA
at VCE = 60 V
Emitter Base Cutoff Current
IEBO - 1 mA
at VEB = 5 V
Collector Emitter Sustaining Voltage
VCEO(sus) 100 - V
at IC = 30 mA
Collector Emitter Saturation Voltage
VCE(sat) - 1.2 V
at IC = 3 A, IB = 375 mA
Base Emitter On Voltage
VBE(on) - 1.8 V
at VCE = 4 V, IC = 3 A
Transition Frequency
fT 3 - MHz
at VCE = 10 V, IC = 500 mA, f = 1 MHz

SEMTECH ELECTRONICS LTD.

Subsidiary of Sino-Tech International (BVI) Limited
®
Dated：16/04/2012 Rev：02
ST TIP31C

C H
T E
E M
S
SEMTECH ELECTRONICS LTD.
Subsidiary of Sino-Tech International (BVI) Limited
®
Dated：16/04/2012 Rev：02
ST TIP31C

TO-220 PACKAGE OUTLINE

C H
T E
E M
S
SEMTECH ELECTRONICS LTD.
Subsidiary of Sino-Tech International (BVI) Limited
®
Dated：16/04/2012 Rev：02