SEMICONDUCTOR D304X RoHS

RoHS
Nell High Power Products

High Voltage Fast-Switchong NPN Power Transistor

12A/400V/100W

C
FEATURES
High-speed switching
High breakdown voltage
High current capability
High reliability
B
C
APPLICATIONS
E
(D304X)
Electronic ballasts, energy-saving light
High frequency power transformer C (2)
High frequency switching power supply
Common power amplifier B
(1) NPN
E (3)

ABSOLUTE MAXIMUM RATINGS (TC = 25°C)

SYMBOL PARAMETER VALUE UNIT

VCBO Collector to base voltage (I E =0) 450

V CEO Collector to emitter voltage (I B =0) 400

V
V CES Collector to emitter voltage (V BE =0) 450

V EBO Emitter to base voltage 9

IC Collector current 12

I CM* Peak Collector current 24 A

IB Base current 6

I BM* Peak Base current 12

PC Collector power dissipation T C = 25°C 100 W

Tj Junction temperature 150

ºC
T stg Storage temperature -55 to 150

*Pulse test: pulse width = 5.0ms, duty cycle < 10%

THERMAL CHARACTERISTICS (TC = 25°C)

SYMBOL PARAMETER VALUE UNIT

Rth(j-c) Thermal resistance, junction to case 1.25 ºC/W

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 SEMICONDUCTOR D304X RoHS
RoHS
Nell High Power Products

ELECTRICAL CHARACTERISTICS (TC = 25°C)

SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
ICBO V CBO = 450V, l E = 0 100
Collector cutoff current
ICEO V CEO = 400V, l B = 0 50 µA
I EBO Emitter cutoff current V EBO = 9V, l C = 0 1.0
V (BR)CEO Collector to emitter breakdown voltage l C = 10mA, I B = 0
400
V CEO(SUS) * Collector to emitter sustaining voltage l C = 1A, L = 50mH
V
V (BR)CBO Collector to base breakdown voltage l C = 1mA, I E = 0 450

V (BR)EBO Emitter to base breakdown voltage l E = 1mA, I C = 0 9

V CE = 5V, l C = 5A 8 40
h FE Forward current transfer ratio (DC current gain)
V CE = 5V, l C = 8A 5

l C = 5A, l B = 1A 0.8
V CE(sat) Collector to emitter saturation voltage
l C = 8A, l B = 1.6A 2.2 V
V BE(sat) Base to emitter saturation voltage l C = 5A, l B = 1A 1.6

t on Turn-on time 0.7

V CC = 24V, l C = 5A
t stg Storage time l B1 = -I B2 = 1A 3.0 µS
tf Fall time 0.7

V CE = 10V, I C = 0.5A
fT Trasistion frequency 2.5 MHz
f = 1.0MHz

*V CEO(sus) Test circuit

50/60Hz
mercury relay X
L 50mH

120W Y

6V 1W
15V
G

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 SEMICONDUCTOR D304X RoHS
RoHS
Nell High Power Products

Fig.1 DC Current gain Fig.2 Base - Emitter saturation voltage

100
T J = 100°C 1.4

Base-Emitter Saturation voltage

I C /I B = 5
T J = 25°C 1.2 T J = 25°C
DC current gain, h FE

10

V BE (Sat) (V)
1.0

0.8
V CE = 5V
1
0.6

T J = 100°C
0.1 0.4
0.01 0.1 1 10 0.1 1 10

Collector current , I C (A) Collector Current, l C (A)

Fig.3 Collector-Emitter saturation voltage Fig.4 Power derating

Collector-Emitter saturation voltage

Power derating factor, P C (%)

I C /I B = 5 100

1 80
V CE (sat) (V)

T J = 100°C

60

0.1 40
T J = 25°C
20

0.01 0
1 10 0 25 50 75 100 125 150

1
Collector current, I C (A) Case temperature, T C (°C)

Fig.5 Safe operating area (SOA)

100
Collector Current, l C (A)

10

DC
1

0.1 T C = 25°C
Single pulse

0.01
1 10 100 500

Collector-Emitter Voltage, V CE (V)

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 SEMICONDUCTOR D304X RoHS
RoHS
Nell High Power Products

Case Style

TO-220AB
10.54 (0.415) MAX.

9.40 (0.370) 3.91 (0.154) 4.70 (0.185)

9.14 (0.360) 3.74 (0.148) 4.44 (0.1754)
1.39 (0.055)
2.87 (0.113)
1.14 (0.045)
2.62 (0.103)

3.68 (0.145)
3.43 (0.135)
16.13 (0.635) 15.32 (0.603)
C 14.55 (0.573)
15.87 (0.625)
B E 8.89 (0.350)
1 2 3 8.38 (0.330)
4.06 (0.160) 29.16 (1.148)
3.56 (0.140) 28.40 (1.118)
2.79 (0.110)
2.54 (0.100)
1.45 (0.057)
1.14 (0.045) 14.22 (0.560)
13.46 (0.530)
2.67 (0.105)
2.41 (0.095) 0.90 (0.035)
2.65 (0.104) 0.70 (0.028)
5.20 (0.205) 0.56 (0.022)
2.45 (0.096)
4.95 (0.195) 0.36 (0.014)

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