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Evaporation Materials • Sputtering Targets •

High Purity Inorganics • Custom Fabrications

Subsidiary of Williams Advanced Materials

Zirconium Oxide, ZrO2


For Optical Coating

Applications sive background pressure, the films grow


Zirconium Dioxide, ZrO2, is a high index, with significant void volume (packing densi-
low absorption material usable for coatings ty <0.8) and exhibit index changes when
in the near-UV (<300 nm) to IR (~8 μm) vented to moist air. In addition, absorption
spectral regions. Dense layers with excep- bands in the 2.9 μm (O-H stretching) and sumed. The effect can be reduced by pro-
tional hardness can be deposited by elec- 6.9 μm (O-H-O vibration) can appear. When viding sufficient oxygen backfill during
tron-beam evaporation or by sputtering. deposition is done by sputtering, energetic evaporation but avoiding excessive pres-
Typical applications include near-UV laser ion assist (IAD), or at very high substrate sure that tends to create voids which will
AR and dielectric mirror designs that require temperatures, the index changes and water absorb water vapor upon venting the vacu-
high laser damage thresholds. Zirconia can absorption bands can be eliminated. um chamber to atmosphere.
be used in combination with Silicon Dioxide
layers to form high index-contrast multilayer The refractive index responds to high ener- Zirconia is among the number of oxide com-
structures with low mechanical stress. gy deposition techniques and to substrate pounds whose tendency for inhomogenous
Hard, scratch-free and adherent coatings temperature because both parameters index gradients can be reduced by the intro-
can be deposited using low-temperature decrease the void volume by increasing the duction of foreign oxides. Additives such as
techniques such as IAD or sputtering, and is packing density of the microstructure. Post- Titanium Oxide, Silicon Dioxide,
therefore particularly applicable to protect- deposition baking in air can raise the refrac- Magnesium Oxide, and others modify the
ing metal mirrors from abrasion. tive index of electron-beam and resistance- crystalline growth behavior [1, 2].
heated depositions. Some amount of index
Film Properties inhomogeneity can appear with increasing
Completely oxidized Zirconia films exhibit layer thickness and with layer number in a
low absorption over the wavelength range multi-layer design as source material is con-
~250 nm to at least 10 μm. Extinction coef-
ficient is less than ~ 0.001 above wave- n of ZrO2 With & w/o IAD
length ~250 nm. The dispersion in index
between 450 nm and at least 1500 nm is 2.4

small, an advantage for wide-band coating 2.35

designs. Evaporation causes some amount 2.3

of dissociation and oxygen loss, which must 2.25


2.2 n IAD
be restored by supplying a partial pressure
n

2.15 n w/o IAD


of oxygen during deposition. Adhesion is 2.1
excellent to glass, to most other oxides, to 2.05
some polymers and to metals such as 2
Aluminum and Silver. The films generally 1.95

grow with a crystalline microstructure. 250 350 450 550 650 750 850 950 1050 1150

Under some evaporation conditions, such WVL (nm)

as low energy resistance-heated evapora-


Figure 1. ZrO2 deposited on substrates at 200°C with- and without-IAD.
tion, low substrate temperature, or exces-

CERAC, inc. • P.O. Box 1178 Milwaukee, WI 53201-1178 • Tel +1(414) 289-9800 • Fax: +1(414) 289-9805 • E-mail: ceracinfo@beminc.com • web: www.cerac.com
Refractive Index k of ZrO2 with and w/o IAD
The refractive indices are dependent on the
degree of oxidation and the film density 0.01
achieved. Both of these parameters are 0.009
affected by substrate temperature and IAD 0.008
0.007
energy. IAD increases the packing density, 0.006
k no IAD
and thus the refractive index by a substan- 0.005

k
k IAD
tial amount. The penalty is increased 0.004
0.003
absorption, a problem for high-energy laser 0.002
coatings, as seen in the figure at right. 0.001
0
Material Behavior 240 260 280 300 320 340 360 380 400

The starting material form is either tablets or WVL (nm)


sintered pieces. Recommended precondi-
tioning consists of rapidly sweeping a low Figure 2. As in figure 1, but showing the extinction coefficients. UV extinction coefficients
are higher with the addition of IAD.
power electron beam to slowly and uniform-
ly heat the surfaces of the material. Monitor
the pressure and crucible to decrease out- Evaporation Parameters
gassing and spitting to an acceptable level
while slowly increasing the power to just Evaporation temperature ~2200° C
below evaporation temperature. Tablets or Source Container Graphite liner in E-beam. Electron beam should
pieces can be added to refill the melt for be swept. Thick tungsten boat for resistance-
subsequent evaporations. heated evaporation. Tungsten will react and
must be replaced after one evaporation.
Rate 1-2 Å/sec.
Physical Properties of Solid Material
Partial pressure of oxygen 8 -10 x 10-5 Torr
Molecular Weight 123.22 Substrate temperature 150° C to 300° C
Melting Point 2715° C Quartz crystal monitor Z-ratio 1
Color White or black
Crystal Density 5.6g/cc

Forms and Sizes Item Number Purity Description


Available Z-1074 99.7 3-12 mm
Ordering Information (Hf <75 ppm) white, sintered pcs
CERAC offers materials for Z-1075 99.95% 10-12mm dia. x
For specific product information or to place
evaporation as well as (Hf <3%) 4-5mm thick,
an order, contact CERAC customer service black, O2 def.
sputtering targets. To view sintered tablets
at ceraccustserv@beminc.com or by phone
pricing on our standard Z-5001 99.9% pre-melted cone
at +1-414-289-9800. Visit www.cerac.com Z-5501 99.9% pre-melted pcs
for a complete list of global sales and serv- catalog items, please visit
ice locations. our on-line catalog at www.cerac.com and search by item number, chemical name or CAS
number. If you require a custom manufactured item, please contact our sales department at
CERAC, inc. +1-414-289-9800 or ceracsales@beminc.com with your specific requirements. You can also fill
Subsidiary of Williams Advanced Materials
P.O. Box 1178 out our quotation request form.
407 N. 13th Street
Milwaukee, WI 53201-1178 USA
Phone: 414-289-9800 Fax: 414-289-9805
ceracinfo@beminc.com www.cerac.com References
1. Elmar Ritter, Appl. Opt. 15 (10), 2318 (1976).
2. F. Stetter, R. Esselborn, N. Harder, M. Fritz, and P. Tolles, Appl. Opt. 15(10), 2315 (1976).

This information and our technical advice - whether in writing or by way of trials - are given in good faith but without any warranty, and this also applies where proprietary rights of third parties are involved.
Our advice does not release you from the obligation to check its validity and to test our products as to their suitability for the intended purposes and uses. The applications, use and processing of our prod-
ucts and the products manufactured by you on the basis of our technical advice are beyond our control, and, therefore, entirely your own responsibility. Our products are sold in accordance with our gen-
eral conditions of sale and delivery.

Copyright 2007, CERAC, inc.

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