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Power semiconductors are used for controlling, conditioning and switching purposes in applications that demand higher voltages and
currents.
The switching behaviour setting of each IGBT high currents are switched too fast. Stray about circuitry malfunction in the application.
is affected by the external resistor RG. As the inductance Ls present in the circuit produces a Table 1 shows the tendencies of changes in
input capacitance of an IGBT, which varies high voltage spike Vstray on the IGBT. This effect gate resistor values in IGBT.
during switching time, has to be charged can be observed in the waveform shown for
The switching behaviour of the free-wheeling
and discharged, the gate resistor will dictate IGBT turn-off in Fig. 2. The shaded areas show
diode protecting the IGBT is also affected by
what time is needed to do this by limiting the the relative value of the switching losses. The
the gate resistor and limits the minimum value
magnitude of the gate current (IG) pulses during transient voltage spike on top of the collector-
of the gate resistance. This means that the turn-
turn-on and turn-off (Fig. 1). Due to the increase emitter voltage may destroy the IGBT, especially
on switching speed of the IGBT can only be
in the gate peak current, which is affected by in short-circuit turn-off operation with a high di/dt.
increased up to a level compatible with the
reducing the turn-on and turn-off gate resistor Vstray can be reduced by increasing the value of
reverse recovery behaviour of the free-wheeling
values RG(on) and RG(off), the turn-on and turn-off the gate resistor. Thus, the risk of IGBT destruction
diode that is used. A decrease in the gate
time will be shorter and the switching losses will due to overvoltage can be eliminated. Fast turn-
resistor increases not only the overvoltage stress
be reduced. What needs to be considered on and turn-off leads to higher dv/dt and di/dt
on the IGBT, but also on the free-wheeling diodes
when reducing the value of the gate resistor values respectively. Thus, more electromagnetic
caused by the increased diC/dt in IGBT modules.
is the current behaviour di/dt generated when emissions (EMI) are produced and can bring
The usage of specially designed, optimised
control axial lifetime diodes with soft recovery
behaviour allows for a low peak reverse current
and hence a lower turn-on current on the IGBTs
in bridge circuits.
resistor is in use, this will result in an overheated [5] P Bhosale, M. Hermwille, "Connection of Gate
or even burned gate resistor. During operation, Drivers to IGBT and Controller", Application Note
AN-7002, SEMIKRON International
the gate resistor has to withstand a continuous
flow of pulses. Therefore, the gate resistor has [6] M Hermwille, “IGBT Driver Calculation”, Application
Note AN-7004, SEMIKRON Int
to have a certain peak power capability. EMI
noises also might result from using a very small Contact Karen Schutte,
gate resistor as this leads to higher dv/dt or Semikron, Tel 012 345-6060,
Fig. 2: IGBT turn-off. di/dt values. karen.schutte@semikron.com