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Jan-Martin Wagner
Christian-Albrechts-Universität zu Kiel
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1 mK
Simple quantitative interpretation
possible: local heating power directly
proportional to the current strength,
P = UbiasIlocal (energy conservation)
2a Retreat 2009, Weimar
Motivation: Peltier effect in lock-in thermography (LIT)
investigations of photovoltaic devices
a) LIT image of a shunted mc-Si cell b) LIT image of a CSG module showing
strong edge recombination and cooling
at the contacts
0
100
200
300
400
1 mK Pixel
cooling heating
Simple quantitative interpretation -0.75 -0.50 -0.25
0
0.00
_350mV_dat
0.25 0.50 0.75
! ( eff
! e / h = "e / h + Eband )q
e/h
eff
!e Eband !e EC
n-type EC p-type EF
EF EV
eff
EV !h Eband !h
! ( eff
! e / h = "e / h + Eband )q
e/h
eff
!e Eband !e EC
n-type EC p-type EF
EF EV
eff
EV !h Eband !h
Interpretation: EF is the free energy F; isothermal condition: Eint = F + TS
! The excess energy is heat; % = !/T: entropy per charge carrier
– Large doping:
Fermi level inside the band (impurity deionization relevant)
– Large doping:
Fermi level inside the band (impurity deionization relevant)
– Charge carrier contribution !cc small but not negligible (very roughly:
a few kBT/e); only band-structure energy relative to EF relevant
– Large doping:
Fermi level inside the band (impurity deionization relevant)
– Charge carrier contribution !cc small but not negligible (very roughly:
a few kBT/e); only band-structure energy relative to EF relevant
– Large doping:
Fermi level inside the band (impurity deionization relevant)
– Charge carrier contribution !cc small but not negligible (very roughly:
a few kBT/e); only band-structure energy relative to EF relevant
ohmic contact
!e Udiff metal
EC
EF EF
metal
!h
EV
! min
h
eff
Eband = ( 52 + r)k B T constant ! !min determined by !e / h = EC / V " EF
! Minority carrier Peltier coefficient increased by Udiff compared to maj. carrier
8a Retreat 2009, Weimar
p–n junction: spatially varying Peltier coefficients
Zero bias, no illumination: ! min
e
ohmic contact
ohmic contact
!e Udiff metal
EC
EF EF
metal
!h
EV
! min !" # 0
h
at the contacts and at the junction
! Heat exchange at junction: cooling for “forward” current (carriers “go up”),
heating for “reverse” current (carriers “go down”)
8b Retreat 2009, Weimar
p–n junction: bias-dependent Peltier coefficients
Diode operation: forward bias, no illumination ohmic contact
min
! Carrier injection and recombination ! e
ohmic contact
!e
EC
metal
EF,e
EF
bias voltage; net heating
EF
metal EF,h
EV !h
! min
h
ohmic contact
!e
EC
metal
EF,e
EF
bias voltage; net heating
EF
metal EF,h
EV !h
CSG (crystalline silicon on glass) module: many long (module width) but narrow
stripes (6 mm) of polycrystalline p–n Si layers (2 "m) connected in series
– Edge:
200
300
a) p–n junction, but no Peltier
cooling visible!
400
b) Defects, leading to
0 125 250 375 500
recombination (heating)
Pixel
cooling -0.75 -0.50 -0.25 0.00 0.25 0.50 0.75 heating ! combined effect
0
_350mV_dat
base
EV !h recomb. +
photo-gen. e–h pair
base
EV !h recomb. +
depletion
region recombination photo-gen. e–h pair
! = –U "QP / " QJ
p region (1016 cm–3): ! # 350 mV, ca. 1/3 from !ph
n region (1020 cm–3): ! # –70 mV, no !ph part