IRFZ46, SiHFZ46

Vishay Siliconix

Power MOSFET

FEATURES
PRODUCT SUMMARY
• Dynamic dV/dt Rating
VDS (V) 50 Available
• 175 °C Operating Temperature
RDS(on) (Ω) VGS = 10 V 0.024
• Fast Switching RoHS*
COMPLIANT
Qg (Max.) (nC) 66 • Ease of Paralleling
Qgs (nC) 21 • Simple Drive Requirements
Qgd (nC) 25 • Lead (Pb)-free Available
Configuration Single

D DESCRIPTION
TO-220 Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
G
cost-effectiveness.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
S levels to approximately 50 W. The low thermal resistance
D
G S and low package cost of the TO-220 contribute to its wide
N-Channel MOSFET acceptance throughout the industry.

ORDERING INFORMATION
Package TO-220
IRFZ46PbF
Lead (Pb)-free
SiHFZ46-E3
IRFZ46
SnPb
SiHFZ46

ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted

PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 50
V
Gate-Source Voltage VGS ± 20
Continuous Drain Currente TC = 25 °C 50
VGS at 10 V ID
Continuous Drain Current TC = 100 °C 38 A
Pulsed Drain Currenta IDM 220
Linear Derating Factor 1.0 W/°C
Single Pulse Avalanche Energyb EAS 100 mJ
Maximum Power Dissipation TC = 25 °C PD 150 W
Peak Diode Recovery dV/dtc dV/dt 4.5 V/ns
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 175
°C
Soldering Recommendations (Peak Temperature)d for 10 s 300
10 lbf · in
Mounting Torque 6-32 or M3 screw
1.1 N·m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 34 µH, RG = 25 Ω, IAS = 54 A (see fig. 12).
c. ISD ≤ 54 A, dI/dt ≤ 250 A/µs, VDD ≤ VDS, TJ ≤ 175 °C.
d. 1.6 mm from case
e. Current limited by the package, (die current = 54 A).

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 90372 For technical questions, contact: hvmos.techsupport@vishay.com www.vishay.com
S09-0070-Rev. A, 02-Feb-09 1
IRFZ46, SiHFZ46
Vishay Siliconix Power MOSFET

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient RthJA - 62
Case-to-Sink, Flat, Greased Surface RthCS 0.50 - °C/W
Maximum Junction-to-Case (Drain) RthJC - 1.0

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 50 - - V
VDS Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.057 - V/°C
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 2.0 - 4.0 V
Gate-Source Leakage IGSS VGS = ± 20 - - ± 100 nA
VDS = 50 V, VGS = 0 V - - 25
Zero Gate Voltage Drain Current IDSS µA
VDS = 48 V, VGS = 0 V, TJ = 150 °C - - 250
Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 32 Ab - - 0.024 Ω
Forward Transconductance gfs VDS = 25 V, ID = 32 Ab 27 - - S
Dynamic
Input Capacitance Ciss - 1800 -
VGS = 0 V,
Output Capacitance Coss VDS = 25 V, - 960 - pF
f = 1.0 MHz, see fig. 5
Reverse Transfer Capacitance Crss - 160 -
Total Gate Charge Qg - - 66
ID = 54 A, VDS = 48 V,
Gate-Source Charge Qgs VGS = 10 V - - 21 nC
see fig. 6 and 13b
Gate-Drain Charge Qgd - - 25
Turn-On Delay Time td(on) - 12 -
Rise Time tr - 120 -
VDD = 28 V, ID = 54 A, ns
Turn-Off Delay Time td(off) RG = 9.1 Ω, RD = 0.49 Ω, see fig. 10b - 42 -
Fall Time tf - 95 -

Internal Drain Inductance LD Between lead, D

- 4.5 -
6 mm (0.25") from
package and center of nH
G

Internal Source Inductance LS die contact - 7.5 -

S

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current IS MOSFET symbol D - - 50c

showing the
integral reverse A
G

Pulsed Diode Forward Currenta ISM p - n junction diode S

- - 220

Body Diode Voltage VSD TJ = 25 °C, IS = 54 A, VGS = 0 Vb - - 2.5 V

Body Diode Reverse Recovery Time trr - 66 99 ns
TJ = 25 °C, IF = 54 A, dI/dt = 100 A/µsb
Body Diode Reverse Recovery Charge Qrr - 0.17 0.31 µC
Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
c. Current limited by the package, (die current = 54 A).

www.vishay.com For technical questions, contact: hvmos.techsupport@vishay.com Document Number: 90372

2 S09-0070-Rev. A, 02-Feb-09
 IRFZ46, SiHFZ46
Power MOSFET Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Fig. 1 - Typical Output Characteristics, TC = 25 °C Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

Fig. 2 - Typical Output Characteristics, TC = 175 °C

Document Number: 90372 For technical questions, contact: hvmos.techsupport@vishay.com www.vishay.com

S09-0070-Rev. A, 02-Feb-09 3
IRFZ46, SiHFZ46
Vishay Siliconix Power MOSFET

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 8 - Maximum Safe Operating Area

www.vishay.com For technical questions, contact: hvmos.techsupport@vishay.com Document Number: 90372

4 S09-0070-Rev. A, 02-Feb-09
 IRFZ46, SiHFZ46
Power MOSFET Vishay Siliconix

RD
VDS

VGS
D.U.T.
RG
+
- VDD

10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %

Fig. 10a - Switching Time Test Circuit

VDS
90 %

10 %
VGS
td(on) tr td(off) tf

Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10b - Switching Time Waveforms

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

L
VDS VDS
Vary tp to obtain
required IAS tp
VDD
RG D.U.T. +
V DD
-
I AS VDS

10 V
tp 0.01 Ω
IAS

Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms

Document Number: 90372 For technical questions, contact: hvmos.techsupport@vishay.com www.vishay.com

S09-0070-Rev. A, 02-Feb-09 5
IRFZ46, SiHFZ46
Vishay Siliconix Power MOSFET

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

Current regulator
Same type as D.U.T.

50 kΩ
QG
10 V 12 V 0.2 µF
0.3 µF

QGS QGD +
VDS
D.U.T. -

VG
VGS

3 mA

Charge
IG ID
Current sampling resistors

Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit

www.vishay.com For technical questions, contact: hvmos.techsupport@vishay.com Document Number: 90372

6 S09-0070-Rev. A, 02-Feb-09
 IRFZ46, SiHFZ46
Power MOSFET Vishay Siliconix

Peak Diode Recovery dV/dt Test Circuit

+ Circuit layout considerations

D.U.T.
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
-

- +
-

RG • dV/dt controlled by RG +
• Driver same type as D.U.T. VDD
-
• ISD controlled by duty factor "D"
• D.U.T. - device under test

Driver gate drive

P.W.
Period D=
P.W. Period

VGS = 10 V*

D.U.T. ISD waveform

Reverse
recovery Body diode forward
current current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
VDD

Re-applied
voltage Body diode forward drop
Inductor current

Ripple ≤ 5 % ISD

* VGS = 5 V for logic level devices

Fig. 14 - For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?90372.

Document Number: 90372 For technical questions, contact: hvmos.techsupport@vishay.com www.vishay.com

S09-0070-Rev. A, 02-Feb-09 7
 Legal Disclaimer Notice
Vishay

Disclaimer

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
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Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000 www.vishay.com

Revision: 18-Jul-08 1
Mouser Electronics

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