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PD - 5.026

CPV362MF
IGBT SIP MODULE Fast IGBT
1
Features
• Fully isolated printed circuit board mount package
• Switching-loss rating includes all "tail" losses D1 D3 D5
TM Q1 Q3 Q5
• HEXFRED soft ultrafast diodes 3 9 15
• Optimized for medium operating frequency (1 to 10kHz) 4 10 16
See Fig. 1 for Current vs. Frequency curve D2 D4 D6
Q2 Q4 Q6
6 12 18

Product Summary 7 13 19
Output Current in a Typical 5.0 kHz Motor Drive
4.6 ARMS per phase (1.4 kW total) with TC = 90°C, TJ = 125°C, Supply Voltage 360Vdc,
Power Factor 0.8, Modulation Depth 80% (See Figure 1)
Description
The IGBT technology is the key to International Rectifier's advanced line of
IMS (Insulated Metal Substrate) Power Modules. These modules are more
efficient than comparable bipolar transistor modules, while at the same time
having the simpler gate-drive requirements of the familiar power MOSFET.
This superior technology has now been coupled to a state of the art materials
system that maximizes power throughput with low thermal resistance. This
package is highly suited to motor drive applications and where space is at a
premium.

Absolute Maximum Ratings


Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
IC @ TC = 25°C Continuous Collector Current, each IGBT 8.8
IC @ TC = 100°C Continuous Collector Current, each IGBT 4.8
ICM Pulsed Collector Current 26 A
ILM Clamped Inductive Load Current 26
IF @ TC = 100°C Diode Continuous Forward Current 3.4
IFM Diode Maximum Forward Current 26
VGE Gate-to-Emitter Voltage ±20 V
VISOL Isolation Voltage, any terminal to case, 1 min. 2500 VRMS
PD @ TC = 25°C Maximum Power Dissipation, each IGBT 23 W
PD @ TC = 100°C Maximum Power Dissipation, each IGBT 9.1
TJ Operating Junction and -40 to +150
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw. 5-7 lbf•in (0.55-0.8 N•m)

Thermal Resistance
Parameter Typ. Max. Units
RθJC (IGBT) Junction-to-Case, each IGBT, one IGBT in conduction — 5.5
RθJC (DIODE) Junction-to-Case, each diode, one diode in conduction — 9.0 °C/W
RθCS (MODULE) Case-to-Sink, flat, greased surface 0.1 —
Wt Weight of module 20 (0.7) — g (oz)

Revision 1
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CPV362MF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 250µA
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.72 — V/°C VGE = 0V, IC = 1.0mA
VCE(on) Collector-to-Emitter Saturation Voltage — 1.6 1.8 IC = 4.8A VGE = 15V
— 2.0 — V IC = 8.8A See Fig. 2, 5
— 1.7 — IC = 4.8A, T J = 150°C
VGE(th) Gate Threshold Voltage 3.0 — 5.5 VCE = VGE, IC = 250µA
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage — -11 — mV/°C VCE = VGE, IC = 250µA
gfe Forward Transconductance 2.9 5.0 — S VCE = 100V, IC = 9.0A
ICES Zero Gate Voltage Collector Current — — 250 µA VGE = 0V, VCE = 600V
— — 1700 VGE = 0V, VCE = 600V, T J = 150°C
VFM Diode Forward Voltage Drop — 1.4 1.7 V IC = 8.0A See Fig. 13
— 1.3 1.6 IC = 8.0A, T J = 150°C
IGES Gate-to-Emitter Leakage Current — — ±500 nA VGE = ±20V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)


Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge (turn-on) — 16 21 IC = 9.0A
Qge Gate - Emitter Charge (turn-on) — 2.4 3.4 nC VCC = 400V
Qgc Gate - Collector Charge (turn-on) — 7.6 10 See Fig. 8
td(on) Turn-On Delay Time — 24 — TJ = 25°C
tr Rise Time — 13 — ns IC = 9.0A, V CC = 480V
td(off) Turn-Off Delay Time — 160 270 VGE = 15V, R G = 50Ω
tf Fall Time — 310 600 Energy losses include "tail" and
Eon Turn-On Switching Loss — 0.22 — diode reverse recovery
Eoff Turn-Off Switching Loss — 0.40 — mJ See Fig. 9, 10, 11, 18
Ets Total Switching Loss — 0.62 1.04
td(on) Turn-On Delay Time — 25 — TJ = 150°C, See Fig. 9, 10, 11, 18
tr Rise Time — 18 — ns IC = 9.0A, V CC = 480V
td(off) Turn-Off Delay Time — 210 — VGE = 15V, R G = 50Ω
tf Fall Time — 600 — Energy losses include "tail" and
Ets Total Switching Loss — 1.07 — mJ diode reverse recovery
Cies Input Capacitance — 340 — VGE = 0V
Coes Output Capacitance — 63 — pF VCC = 30V See Fig. 7
Cres Reverse Transfer Capacitance — 5.9 — ƒ = 1.0MHz
trr Diode Reverse Recovery Time — 37 55 ns TJ = 25°C See Fig.
— 55 90 TJ = 125°C 14 IF = 8.0A
Irr Diode Peak Reverse Recovery Current — 3.5 50 A TJ = 25°C See Fig.
— 4.5 8.0 TJ = 125°C 15 VR = 200V
Qrr Diode Reverse Recovery Charge — 65 138 nC TJ = 25°C See Fig.
— 124 360 TJ = 125°C 16 di/dt = 200A/µs
di(rec)M/dt Diode Peak Rate of Fall of Recovery — 240 — A/µs TJ = 25°C See Fig.
During tb — 210 — TJ = 125°C 17

Notes:
Repetitive rating; V GE=20V, pulse width VCC=80%(VCES), VGE=20V, L=10µH, Pulse width 5.0µs,
limited by max. junction temperature. RG= 50Ω, ( See fig. 19 ) single shot.
( See fig. 20 ) Pulse width ≤ 80µs; duty factor ≤ 0.1%.

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CPV362MF

8 2.5

Total O utpu t P ow e r (kW )


6 1.9
Lo ad C urrent (A )

S
4 1.2

2
TC = 90°C 0.6
TJ = 125°C
Power Factor = 0.8
Modulation Depth = 0.8
VC C = 60% of Rated Voltage
0 0
0.1 1 10 100
f, F re quency (kH z)

Fig. 1 - RMS Current and Output Power, Synthesized Sine Wave

100 100
I C , C ollector-to-E mitte r C urren t (A )

TJ = 25 °C
I C , C ollector-to-E mitter C urrent (A )

TJ = 25 °C
TJ = 1 50 °C
TJ = 1 50 °C
10

10

V G E = 15 V V C C = 1 00 V
2 0 µs P U L S E W ID TH 5 µs P UL S E W ID TH
0.1 1
0.1 1 10 5 10 15 20
V C E , C o llector-to-Em itter V oltage (V) V G E , G ate-to-E m itter V olta g e (V )

Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics

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CPV362MF

16 4.0
V G E = 15 V VG E = 1 5 V

VC E , C o lle ctor-to-E m itter V oltage (V )


Ma xim um D C C ollecto r C urren t (A )

80 µs P UL S E W ID TH I C = 18 A
3.5

12

3.0

8 2.5
I C = 9.0 A

2.0
I C = 4.5A
4

1.5

0 1.0
25 50 75 100 125 150 -60 -40 -20 0 20 40 60 80 1 00 120 140 160
T C , C ase Tem perature (°C ) TC , C ase Tem perature (°C )

Fig. 4 - Maximum Collector Current vs. Fig. 5 - Collector-to-Emitter Voltage vs.


Case Temperature Case Temperature

10

D = 0 .5 0
T h e rm a l R e sp o n s e (Z thJC )

0 .2 0
1
0 .1 0

0 .0 5

0 .0 2 PD M
0 .0 1
0.1
S IN G L E P U L S E t
1
(T H E R M A L R E S P O N S E ) t2

N o te s :
1 . D u ty fa c to r D = t /t
1 2
2 . P e a k T J = P D M x Z thJ C + T C
0.01
0.000 01 0.0001 0.001 0.01 0.1 1 10

t 1 , R e c ta n g u lar P u ls e D u ra tio n (s e c )

Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case

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CPV362MF

700 20
V GE = 0V, f = 1MHz V C E = 4 00 V
C ies = C ge + C gc , Cce SHORTED I C = 9.0A
C res = C gc

V G E , G ate-to-E m itter V oltage (V )


600
C oes = C ce + C gc 16

500 Cies
C, C apacitance (pF)

Coes 12
400

300
8

200
Cres
4
100

0 0
1 10 100 0 4 8 12 16 20

V C E , C o llector-to-Em itter V oltage (V) Q g , Total G ate C harge (nC )

Fig. 7 - Typical Capacitance vs. Fig. 8 - Typical Gate Charge vs.


Collector-to-Emitter Voltage Gate-to-Emitter Voltage

1 .3 6 10
VC C = 48 0 V R G = 50 Ω
VG E = 15 V V GE = 15 V
TC = 25 °C V CC = 48 0 V
To ta l S w itc hing Lo sse s (m J)
Total S w itching Lo sse s (m J)

1 .3 4
IC = 9.0A I C = 1 8A

1 .3 2 I C = 9.0A

1 .3 0 1
I C = 4.5 A

1 .2 8

1 .2 6

1 .2 4 0.1
20 30 40 50 60 -60 -40 -20 0 20 40 60 80 100 120 140 160
R G , G ate R esistance (Ω ) TC , C ase Tem peratu re (°C )
W

Fig. 9 - Typical Switching Losses vs. Gate Fig. 10 - Typical Switching Losses vs.
Resistance Case Temperature

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CPV362MF
4.0 100
RG = 50 Ω VGGE E= 20 V

I C , C o lle c to r-to -E m itte r C u rre n t (A )


TC = 150 °C T J = 125 °C
V CC = 4 80 V
Total Sw itching Losses (m J )

VGE = 15 V
3.0

S A FE O P E RA TING A RE A
2.0 10

1.0

0.0 1
4 8 12 16 20 1 10 100 1000
I C , C o llector-to -E m itte r Current (A ) V C E , C o lle cto r-to-E m itte r V olta g e (V )

Fig. 11 - Typical Switching Losses vs. Fig. 12 - Turn-Off SOA


Collector-to-Emitter Current

100
Instantaneous Forward Current - I F (A)

10

TJ = 150°C

TJ = 125°C

TJ = 25°C
1

0.1
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
Forward Voltage Drop - V FM (V)
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current

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CPV362MF
100 100

VR = 200V VR = 200V
TJ = 125°C TJ = 125°C
TJ = 25°C TJ = 25°C
80

IF = 16A

I IRRM - (A)
60
t rr - (ns)

IF = 8.0A
IF = 16A
10

IF = 8.0A
40

I F = 4.0A

IF = 4.0A
20

0 1
100 1000 100 1000
di f /dt - (A/µs) di f /dt - (A/µs)
Fig. 14 - Typical Reverse Recovery vs. dif/dt Fig. 15 - Typical Recovery Current vs. dif/dt

500 10000

VR = 200V VR = 200V
TJ = 125°C TJ = 125°C
TJ = 25°C TJ = 25°C
400
di(rec)M/dt - (A/µs)
Q RR - (nC)

300
IF = 4.0A
I F = 16A
1000

IF = 8.0A
200
IF = 16A
I F = 8.0A

100

IF = 4.0A

0 100
100 1000 100 1000
di f /dt - (A/µs) di f /dt - (A/µs)

Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di(rec)M/dt vs. dif/dt

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CPV362MF
Same type 90% Vge
device as
D.U.T. +Vge

Vce

430µF
80%
of Vce D.U.T. 90% Ic
10% Vce
Ic Ic
5% Ic

td(off) tf


t1+5µS
Fig. 18a - Test Circuit for Measurement of Eoff = Vce ic dt
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t1

t1 t2
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf


trr
GATE VOLTAGE D.U.T. trr
Qrr = id dt
Ic
tx
10% +Vg
+Vg
tx
10% Irr
10% Vcc
Vcc
DUT VOLTAGE
Vce
AND CURRENT Vpk
Irr
10% Ic
Vcc Ipk
90% Ic
Ic
DIODE RECOVERY
WAVEFORMS
5% Vce
td(on) tr


t2


Eon = Vce ie dt t4
t1 Erec = Vd id dt
t3
t1 t2 DIODE REVERSE
RECOVERY ENERGY

Fig. 18c - Test Waveforms for Circuit of Fig. 18a, t3 t4


Defining Eon, td(on), tr
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr

Refer to Section D for the following:


Appendix D: Section D - page D-6
Fig. 18e - Macro Waveforms for Test Circuit of Fig. 18a
Fig. 19 - Clamped Inductive Load Test Circuit
Fig. 20 - Pulsed Collector Current Test Circuit

Package Outline 5 - IMS-2 (13-pin) Section D - page D-14

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