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The port definition of ideal CCII+ and CFOA elements are given - +
with the matrix representations as shown in (3) and (4) respectively. Fig. 5. Metamutator realized with two CFOAs
DOCCII DOCCII The CIM circuit in Fig. 5 was simulated using a sinusoidal current
X Z+ Z+
source with amplitude of 90 μA and frequency of 8 Hz at port 1. For
i1 X
i2 the nonlinear resistor in Fig. 6 one diode 1N4148 and two resistors,
+ + + i3
connected as shown in Fig. 7 were used at port 3 of the CIM. For
CFOA, TSMC 0.13 μm CMOS process parameters were used, with
transistor dimensions as shown in Table I and its circuit in Fig. 8. The
supply voltage is chosen as ±0.75V and VB as 0.24 V. The inductor
Fig. 4. Metamutator realized with two DOCCIIs and capacitor values were selected as 350 mH and 4 μF, respectively.
1. 2 K
290
VDD TABLE II. DIFFERENT CONFIGURATIONS FOR THE UNIVERSAL FILTER
ሺ + ࢜ࡿ ሻ//
VB
Realization ࡾ ࡾ +ࢂ࢙
M16 ሺࡾ +࢜ࡿ )
M1 M6 M9 M11
#1 Port 1 Port 2 Port 4 Port 3
Z
#2 Port 4 Port 3 Port 1 Port 2
Y M2 M4 x M12 M14 W
#3 Port 2 Port 1 Port 3 Port 4
M7 M 17
#4 Port 3 Port 4 Port 2 Port 1
M13 M15
M3 M5 M8 M 10 M18
+ i4
VSS
W Y Z X
Fig. 8 Transistor level circuit of CFOA [15] i3 +
vS2 CFOA CCII+
i2
The result of the simulation is shown in Fig. 9 confirming the +
X Z
vS1 + vS3
Y
memristive relationship between ݒand ݅. i1
600
400
(a)
200
Voltage [mV]
+ i4
0
-200 W Y Z X
i3
-400
CFOA + CCII+
i2
-600
-100 -80 -60 -40 -20 0 20 40 60 80 100 X Z Y
Current [uA] i1 +
Fig. 9. The ݒെ ݅characteristic of the memristor.
vS2 vS1
TABLE I. DIMENSIONS OF THE TRANSISTORS USED IN CFOA vS3
Transistor W/L (b)
M1, M2, M4, M6, M9, M11, M12, M14, M16 41.6μm/0.52μm Fig. 10 Application of 4-port with CCII+ and CFOA in Universal filter
(a) Realization #1 and (b) Realization 2
M7 and M17 83.2μm/0.52μm
M3, M5, M8, M10, M13, M15, M18 13μm/0.52 μm TABLE III. DIFFERENT FILTERS OF R EALIZATION #1
V. UNIVERSAL FILTER APPLICATION OF CIM Selection ࢂࡿ ࢂࡿ ࢂࡿ Filter Type
In this section a new metamutator application is being proposed. I ܸ 0 0 High-Pass
By connecting several elements to ports of the CIM shown in Fig. 1, II 0 0 ܸ Low-Pass
different realizations of Universal Filters will be achieved according
III 0 ܸ 0 Band-Pass
to Table II. For example by using realizations #1 and #2 in the circuit
of Fig. 2 the configurations will become as shown in Fig. 10 (a) and IV ܸ 0 ܸ Band-Notch
(b) respectively. According to the general definition of CIM V ܸ െܸ ܸ All-Pass
metamutator given with (2) ݒଶ ൌ ݒଷ and assume that the output is
ݒ௨௧ ൌ ݒଶ ൌ ݒଷ . KCL at port 2 of the circuit in Fig. 10 (a) gives:
VI. SIMULATION RESULTS OF THE UNIVERSAL FILTER
ሺܸௌଶ െ ܸ௨௧ ሻ In this section the simulation results of the universal filter will be
ܫଶ ൌ ܥݏଵ ሺܸௌଵ െ ܸ௨௧ ሻ (7)
ܴଵ exhibited. The filter in Fig. 10 (a) was simulated by applying an AC
௩ ଵ voltage source with amplitude of 1V to all inputs, one by one,
Using ݅ଶ ൌ ݅ଵ , ݒଵ ൌ ݒସ from (2), ݅ଵ ൌ െ భ , andܸସ ൌ െ ܫ in (7),
ோయ ௦మ ସ following Table III. Element values are chosen as ܴଵ = ܴଶ =ܴଷ= 1 kΩ
gives: and ܥଵ =ܥଶ= 25 pF. As for CFOA and CCII, 0.13 μm CMOS
ܫସ ൌ ݏଶ ܥଵ ܥଶ ܴଷ ሺܸ௨௧ െ ܸௌଵ ሻ
ௌమ ோయ
ሺܸ௨௧ െ ܸௌଶ ሻ. (8) realization parameters are being used, with transistor level circuit
ோభ shown in Fig. 11 and parameters given in Tables I and IV. The supply
then using ݅ସ ൌ െ݅ଷ and ܫଷ ൌ
ሺೄయ ିೠ ሻ
in (14) gives voltage is chosen as ±0.75 V with VB = 0.24 V.
ோమ
ሺೄయ ିೠ ሻ ௦మ ோయ TABLE IV. DIMENSIONS OF THE TRANSISTORS USED IN CCII.
ൌ ݏଶ ܥଵ ܥଶ ܴଷ ሺܸ௨௧ െ ܸௌଵ ሻ ሺܸ௨௧ െ ܸௌଶ ሻ(9)
ோమ ோభ
Transistor W/L
Solving for ܸ௨௧ in terms of source voltages from (9) the universal
M1, M2, M4, M6, M9 41.6 μm /0.52μm
filter output is obtained as shown by (10), with the selection of various
voltage sources resulting in different filter functions as illustrated in M7 83.2 μm /0.52 μm
Table III: M3, M5, M8, M10 13μm / 0.52 μm
௦మ భ మ ோభ ோమ ோయ ೄభ ା௦మ ோయ ோమ ೄమ ାோభ ೄయ
ܸ௨௧ ሺݏሻ ൌ ௦మ భ మ ோభ ோమ ோయ ା௦మ ோయ ோమ ାோభ
(10)
291
VDD 0
-10
VB
M1 M6 M9 -20
Gain [dB]
-30
Z
Y M2 M4 x -40
M7
-50
1 3 10 30 50
Frequency [MHz]
M3 M5 M8 M 10
Fig. 13 Simulation result for the low-pass filter in Fig. 10 (a)
0
VSS
-10
In the remainder of this section filter functions and their simulated
Gain [dB]
characteristics will be displayed in Table V and Figures 12-16 -15
respectively.
-20
TABLE V. DIFFERENT FILTER FUNCTIONS
-25 1 3 10 30 100
Frequency [MHz]
Selection Filter Function Filter Type
ݏଶ ܥଵ ܥଶ ܴଷ ܴଶ Fig. 14 Simulation result for the Band pass filter in Fig. 10 (a)
1 ܸ௨௧ ሺݏሻ ൌ ܸ High-Pass
ܴ ܴܥ
ݏଶ ܥଵ ܥଶ ܴଷ ܴଶ ݏଶ ଷ ଶ ͳ 0
ܴଵ
ͳ -4
ܸ௨௧ ሺݏሻ ൌ ܸ
2 ܴ ܴܥ Low-Pass
ݏଶ ܥଵ ܥଶ ܴଷ ܴଶ ݏଶ ଷ ଶͳ
ܴଵ -8
Gain [dB]
ܥଶ ܴଷ ܴଶ
ݏ -12
ܴଵ
3 ܸ௨௧ ሺݏሻ ൌ ܸ Band-Pass
ܴ ܴܥ
ݏଶ ܥଵ ܥଶ ܴଷ ܴଶ ݏଶ ଷ ଶ ͳ -16
ܴଵ
ሺ ݏଶ ܥଵ ܥଶ ܴଷ ܴଶ ͳሻ -20
1 3 10 30 100
ܸ௨௧ ሺݏሻ ൌ ܸ Band- Frequency [MHz]
4 ܴ ܴܥ
ݏଶ ܥଵ ܥଶ ܴଷ ܴଶ ݏଶ ଷ ଶ ͳ Notch
ܴଵ Fig. 15 Simulation result for the Notch filter in Fig. 10 (a)
ܴ ܴܥ
ܥ ݏଵ ܥଶ ܴଷ ܴଶ െ ݏଶ ଷ ଶ ͳ
ଶ
ܴଵ 10
5 ܸ௨௧ ሺݏሻ ൌ ܸ All-Pass
ଶ ܥଶ ܴଷ ܴଶ
ܥ ݏଵ ܥଶ ܴଷ ܴଶ ݏ ͳ
ܴଵ 5
Gain [dB]
10 0
0
-5
-10
Gain [dB]
-10
1.0 3.0 10 30 100
-20
Frequency [MHz]
-30 Fig. 16 Simulation result for the All pass filter in Fig. 10 (a)
-40 1
3 10 30 50 All of the filter responses given above have a non-inverting unity
Frequency [MHz] gain. The angular resonance frequency (ɘ ) and quality factor (Q) of
Fig. 12 Simulation result for the high-pass filter in Fig. 10 (a) all the proposed filters in Fig. 10 (a) are:
ଵ
߱ ൌ (11)
ඥభ మ ோయ ோమ
భ
ܳ ൌ ܴଷ ට (12)
మ ோయ ோమ
292
VII. CONCLUSION [4] Y. V. Pershin and M. Di Ventra, "Emulation of floating memcapacitors
and meminductors using current conveyors," in Electronics Letters, Vol.
It has been shown that Metamutators, recently introduced 4-ports 47, no. 4, pp. 243-244, February 17 2011.
in [8,10], can be classified into two categories as: Voltage Inverting [5] D. Biolek, V. Biolková, and Z. Kolka, “Mutators simulating
VIM and Current Inverting CIM, introduced in this paper. CIM is memcapacitors and meminductors,” Proc. Asia Pacific Conference on
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and it has been given three IC realizations, using two different IC [6] D. Biolek and V. Biolkova, “Mutator for transforming memristor into
devices. One of these new realizations has been applied to the memcapacitor,” Electronics Letters, Vol. 46, pp. 1428–1429, 2010.
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IEEE Trans. Circuits and Systems II, Vol. 61, pp. 758-762, 2014.
Several new configurations, with properly terminated CIM ports, [8] I. C. Göknar, and E. Minayi, "Realizations of mutative 4-ports and their
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application among many others presented in [8,10]. All five filter Signal Processing, Springer US, Vol. 81, pp 29–42, 2014.
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simulated using TSMC 0.13 μm parameters for one configuration and quadrature MOS only oscillator and transconductance/transimpedance
they have exhibited excellent frequency response. amplifiers,” Analog Integrated Circuits and Signal Processing, Springer
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Future work will be concerned with the comparison of VIM versus [10] E. Minayi, “Applications of 4-port generalized mutators to memstor
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oscillator using CDTAs,” Turk J Elec Eng&Comp Sci, Vol. 22, pp. 276–
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