Si4828DY

New Product Vishay Siliconix

Dual N-Channel 30-V (D-S) MOSFET


  
VDS (V) rDS(on) (
) ID (A)
0.022 @ VGS = 10 V 7.5
Channel-1
0.030 @ VGS = 4.5 V 6.5
30
0.0135 @ VGS = 10 V 9.8
Channel-2
0.0175 @ VGS = 4.5 V 8.5

D1 D1 D2 D2

SO-8

S1 1 8 D1

G1 2 7 D1
G1 G2
S2 3 6 D2

G2 4 5 D2
S1 S2
Top View
N-Channel 1 N-Channel 2
MOSFET MOSFET

         


Channel-1 Channel-2
P
Parameter S b l
Symbol 10 secs Steady State 10 secs Steady State U i
Unit
Drain-Source Voltage VDS 30
V
Gate-Source Voltage VGS
20
TA = 25C 7.5 5.8 9.8 7.5
Continuous Drain Current (TJ = 150C)a ID
TA = 70C 6 4.6 7.8 6
A
Pulsed Drain Current IDM 30 40
Continuous Source Current (Diode Conduction)a IS 1.8 1.06 1.8 1.06
TA = 25C 2 1.17 2 1.17
Maximum Power Dissipationa PD W
TA = 70C 1.78 0.75 1.28 0.75
Operating Junction and Storage Temperature Range TJ, Tstg –55 to 150 C

    

Channel-1 Channel-2
P
Parameter S b l
Symbol Typ Max Typ Max U i
Unit
t  10 sec 55 62.5 53 62.5
Maximum Junction-to-Ambienta RthJA
Steady-State 89 107 89 107 C/W

Maximum Junction-to-Foot (Drain) Steady-State RthJC 36 45 34 42

Notes
a. Surface Mounted on 1” x 1” FR4 Board.

Document Number: 71181 www.vishay.com
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S-00983—Rev. A, 15-May-00 1
Si4828DY
Vishay Siliconix New Product

          


Parameter Symbol Test Condition Min Typ Max Unit
Static
Ch-1 0.8
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA V
Ch-2 1.0
Ch-1 100
Gate-Body Leakage IGSS VDS = 0 V, VGS = 20 V nA
Ch-2 100
Ch-1 1
VDS = 24 V, VGS = 0 V
Ch-2 1
Z
Zero G
Gate V l
Voltage D i Current
Drain C IDSS mA
A
Ch-1 15
VDS = 24 V, VGS = 0 V, TJ = 85C
Ch-2 15
Ch-1 20
On-State Drain Currenta ID(on) VDS = 5 V, VGS = 10 V A
Ch-2 30
VGS = 10 V, ID = 7.5 A Ch-1 0.018 0.022
VGS = 10 V, ID = 9.8 A Ch-2 0.011 0.0135
D i S
Drain-Source O S
On-State R i
Resistance a rDS(on) W
VGS = 4.5 V, ID = 6.5 A Ch-1 0.024 0.030
VGS = 4.5 V, ID = 8.5 A Ch-2 0.0145 0.0175
VDS = 15 V, ID = 7.5 A Ch-1 17
Forward Transconductancea gfs S
VDS = 15 V, ID = 9.8 A Ch-2 30
IS = 1.8 A, VGS = 0 V Ch-1 0.72 1.1
Diode Forward Voltagea VSD V
IS = 1.8 A, VGS = 0 V Ch-2 0.72 1.1

Dynamicb
Ch-1 8.0 12
Total Gate Charge Qg
Ch
Channel-1
Channel
l1 Ch-2 23 34
VDS = 15 V, VGS = 5 V, ID = 7.5 A Ch-1 1.75
Gate-Source Charge Qgs nC
C
Channel-2 Ch-2 8.6
VDS = 15 V
V, VGS = 5 V,
V ID = –9.8
98A Ch-1 3.2
Gate-Drain Charge Qgd
Ch-2 7.2
Ch-1 10 20
Turn-On Delay Time td(on)
Ch-2 17 30
Ch
Channell1
Channel-1
VDD = 15 V, RL = 15 W Ch-1 5 10
Rise Time tr
ID ^ 1 A, VGEN = 10 V, RG = 6 W Ch-2 10 20

Channel-2 Ch-1 26 50
Turn-Off Delay Time td(off) V, RL = 15 W
VDD = 15 V ns
Ch-2 60 100
ID ^ 1 A, VGEN = 10 V, RG = 6 W
Ch-1 10 16
Fall Time tf
Ch-2 17 30
IF = 1.8 A, di/dt = 100 A/ms Ch-1 30 60
Source-Drain Reverse Recovery Time trr
IF = 1.8 A, di/dt = 100 mA/ms Ch-2 40 70

Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.

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2 S-00983—Rev. A, 15-May-00
 Si4828DY
New Product Vishay Siliconix

 
  
 
 


Output Characteristics Transfer Characteristics

30 30
VGS = 10 thru 4 V

24 24
I D – Drain Current (A)

I D – Drain Current (A)

3V
18 18

12 12

TC = 125C

6 6
25C
1V –55C
2V
0 0
0 2 4 6 8 10 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V)

On-Resistance vs. Drain Current Capacitance

0.05 1000

0.04 800
DS(on) – On-Resistance (
)

C – Capacitance (pF)

Ciss

0.03 600
VGS = 4.5 V

0.02 VGS = 10 V 400

Coss

Crss
0.01 200
r

0 0
0 6 12 18 24 30 0 6 12 18 24 30

ID – Drain Current (A) VDS – Drain-to-Source Voltage (V)

Gate Charge On-Resistance vs. Junction Temperature

10 1.8
VDS = 15 V VGS = 10 V
V GS – Gate-to-Source Voltage (V)

ID = 7.5 A 1.6 ID = 7.5 A

r DS(on) – On-Resistance (
)

8
1.4
(Normalized)

6
1.2

1.0
4

0.8
2
0.6

0 0.4
0 3 6 9 12 15 –50 –25 0 25 50 75 100 125 150
Qg – Total Gate Charge (nC) TJ – Junction Temperature (C)

Document Number: 71181 www.vishay.com
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Si4828DY
Vishay Siliconix New Product

 
  
 
 

Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
40 0.10

DS(on) – On-Resistance ( W )
0.08
I S – Source Current (A)

TJ = 150C
10
0.06

TJ = 25C 0.04
ID = 7.5 A

0.02

r
1 0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10

VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V)

Threshold Voltage Single Pulse Power, Junction-to-Ambient

0.6 100

0.4
80
0.2 ID = 250 mA
V GS(th) Variance (V)

Power (W)

–0.0 60

–0.2

40
–0.4

–0.6
20
–0.8

–1 0
–50 –25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10
TJ – Temperature (C)
Time (sec)

Normalized Thermal Transient Impedance, Junction-to-Ambient

2

1
Normalized Effective Transient

Duty Cycle = 0.5

Thermal Impedance

0.2
Notes:
0.1
0.1 PDM
0.05
t1
t2
0.02 t1
1. Duty Cycle, D =
t2
2. Per Unit Base = RthJA = 89C/W

Single Pulse 3. TJM – TA = PDMZthJA(t)

4. Surface Mounted
0.01
10–4 10–3 10–2 10–1 1 10 100 600
Square Wave Pulse Duration (sec)

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4 S-00983—Rev. A, 15-May-00
 Si4828DY
New Product Vishay Siliconix

 
  
 
 

Normalized Thermal Transient Impedance, Junction-to-Foot
2

1
Normalized Effective Transient

Duty Cycle = 0.5

Thermal Impedance

0.2

0.1
0.1
0.05

0.02

Single Pulse
0.01
10–4 10–3 10–2 10–1 1 10
Square Wave Pulse Duration (sec)

 
  
 
 


Output Characteristics Transfer Characteristics

40 50

VGS = 10 thru 4 V

32 40
I D – Drain Current (A)

I D – Drain Current (A)

24 30

TC = 125C
16 20

8 10 25C
2V 3V
–55C
0 0
0 2 4 6 8 10 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V)

On-Resistance vs. Drain Current Capacitance

0.020 4200

3500 Ciss
VGS = 4.5 V
r DS(on) – On-Resistance (
)

0.016
C – Capacitance (pF)

2800
VGS = 10 V
0.012

2100

0.008
1400
Coss
0.004 Crss
700

0 0
0 8 16 24 32 40 0 6 12 18 24 30

ID – Drain Current (A) VDS – Drain-to-Source Voltage (V)

Document Number: 71181 www.vishay.com
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S-00983—Rev. A, 15-May-00 5
Si4828DY
Vishay Siliconix New Product

 
        
 

Gate Charge On-Resistance vs. Junction Temperature

10 1.8

VDS = 15 V VGS = 10 V
V GS – Gate-to-Source Voltage (V)

ID = 9.8 A 1.6 ID = 9.8 A

8

r DS(on) – On-Resistance (W)

1.4

(Normalized)
6

1.2

4
1.0

2
0.8

0 0.6
0 9 18 27 36 45 –50 –25 0 25 50 75 100 125 150

Qg – Total Gate Charge (nC) TJ – Junction Temperature (C)

Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

40 0.05
DS(on) – On-Resistance ( W )

0.04
I S – Source Current (A)

TJ = 150C
10
0.03

TJ = 25C 0.02
ID = 9.8 A

0.01
r

1 0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10

VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V)

Threshold Voltage Single Pulse Power, Junction-to-Ambient

0.6 100

0.4
80
0.2 ID = 250 mA
V GS(th) Variance (V)

Power (W)

–0.0 60

–0.2

40
–0.4

–0.6
20
–0.8

–1 0
–50 –25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10
TJ – Temperature (C)
Time (sec)

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FaxBack 408-970-5600 Document Number: 71181

6 S-00983—Rev. A, 15-May-00
 Si4828DY
New Product Vishay Siliconix

 
        
 

Normalized Thermal Transient Impedance, Junction-to-Ambient

2

1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance

0.2 Notes:

0.1 PDM

0.1
t1
0.05 t2
t1
1. Duty Cycle, D =
t2
2. Per Unit Base = RthJA = 89C/W
0.02
3. TJM – TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
10–4 10–3 10–2 10–1 1 10 100 600

Square Wave Pulse Duration (sec)

Normalized Thermal Transient Impedance, Junction-to-Foot

2

1
Normalized Effective Transient

Duty Cycle = 0.5

Thermal Impedance

0.2

0.1
0.1
0.05

0.02

Single Pulse
0.01
10–4 10–3 10–2 10–1 1 10
Square Wave Pulse Duration (sec)

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S-00983—Rev. A, 15-May-00 7
 Legal Disclaimer Notice
Vishay

Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.

Document Number: 91000 www.vishay.com

Revision: 08-Apr-05 1
 Package Information
Vishay Siliconix

SOIC (NARROW): 8-LEAD

JEDEC Part Number: MS-012

8 7 6 5

E H

1 2 3 4

D h x 45
C
0.25 mm (Gage Plane)
A
All Leads

q 0.101 mm
e B A1 L
0.004"

MILLIMETERS INCHES
DIM Min Max Min Max
A 1.35 1.75 0.053 0.069
A1 0.10 0.20 0.004 0.008
B 0.35 0.51 0.014 0.020
C 0.19 0.25 0.0075 0.010
D 4.80 5.00 0.189 0.196
E 3.80 4.00 0.150 0.157
e 1.27 BSC 0.050 BSC
H 5.80 6.20 0.228 0.244
h 0.25 0.50 0.010 0.020
L 0.50 0.93 0.020 0.037
q 0° 8° 0° 8°
S 0.44 0.64 0.018 0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498

Document Number: 71192 www.vishay.com

11-Sep-06 1
 Application Note 826
Vishay Siliconix

RECOMMENDED MINIMUM PADS FOR SO-8

0.172
(4.369)
0.028
(0.711)
(6.248)

(3.861)
0.246

0.152
(1.194)
0.047

0.022 0.050
(0.559) (1.270)

Recommended Minimum Pads

Dimensions in Inches/(mm)

Return to Index
Return to Index
APPLICATION NOTE

www.vishay.com Document Number: 72606

22 Revision: 21-Jan-08
 Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Revision: 01-Jan-2019 1 Document Number: 91000