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Sumair BS IT-18-39
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2 Composed by M.Sumair BS IT-18-39
1.Optoelectronics devices
Optoelectronic devices are the product of technology
that combine Optics and Electronics these are branches of physics.
Optics
It is the branch of physics which study the physical aspect of light.
Electronics
The branch of physics which deals with the study of flow and control of electrons,
there behavior and effect on vacuum, temperature and semiconductor.
Electronics
Sensor devices Emitter devices
1.1. SENSOR
These are devices which convert light into electricity.
Sensor
Photo emissive devices photo detector devices
Because of their ultraviolet light sensitivity low noise, extremely small current and
very fast response time (less than 1).
They are used in security latave and detector sensitive.
Photo voltaic
When PN-Junction used without any biased they are made of silicon and
selenium.
Photo conductive
When PN-Junction is used with a reverse biased it is called photo
conductive.
Example: photo diode
They may be either bulb type or junction type.
Bulb type
They are made of single layer of photosensitive material and have no PN-
Junction.
1.0
0.8
0.6
0.4
0.2
Figure show shows average response of human eye to the visible spectrum
extending to (400 to 760 NM). it is seen that peak sensitivity accure at 550NM
with green colour. Peaking in terms of colors human eye is more sensitive to blue,
green, yellow and less sensitive to violet and red colour.
Principle
It based on the principle that the resistance of materials decreases when radiation
is exposed to the materials.
Construction
Electrodes
A conductor used to make electronically contact with materials called electrodes
bulk type photo conductive cell: -
(i) CDS
(ii) CDSE
(iii) PBS
(iv) TIS
Two electrodes are extended in the order to increase the contact
area with the materials.
Working
+ -|
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1.2. Emitter
These are devices used to convert electricity into light.
These are LED, IR and LASER
LED
These are semiconductor devices in which light is emition When an electric current flow
through.
It is forward biased PN-Junction.
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+ -
or p N
o
Construction
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Holes
Electrons
In reverse biased junction amount of current is so small due to thermally generated electron
hole pair.
Basic diagram is:
P N
The diameter of these devices is 2.5 mm and they mounted to-5-pakages with a window to
allow minimum light
A photo diode can turs current on and off in Nano second
These devices are fast photo detector.
Uses
(i) These are used to detecting visible and invisible light.
(ii) Characteristic recognition
(iii) Optical communication equipment’s.
(iv) These are used in logic circuit where high speed required.
(v) Encoder
(vi) Switching.
(vii) Demodulation.
B. PIN photodiode
It is three region PN-junction device.
1. These are fast response then PN-junction photo diode.
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2. These are ultrafast device having switching speed of nanosecond. These devices
generate low noise.
3. These devices are capable of processing very weak signal
4. So these are widely used in electronic circuits
C. Avalanche photodiode
1. It is a PN-junction device which operated in avalanche break down region.
2. It is ultrafast device like PIN Photodiode
3. And can be operated at a frequently Geo Giga Hertz