1 Composed by M.

Sumair BS IT-18-39

Ghazi University Dera Ghazi Khan Department of

CS & IT
Basic electronics

Assignment 1st chapter: Optoelectronics devices

STUDENT NAME: MUHAMMAD SUMAIR

ROLL #/SEM: BS IT 18-39
DEPARTMENT: CS & IT

TEACHER NAME: MS. MARRIAM

Signature of teacher: .
2 Composed by M.Sumair BS IT-18-39

1.Optoelectronics devices
Optoelectronic devices are the product of technology
that combine Optics and Electronics these are branches of physics.

Optics
It is the branch of physics which study the physical aspect of light.

Electronics
The branch of physics which deals with the study of flow and control of electrons,
there behavior and effect on vacuum, temperature and semiconductor.
Electronics
Sensor devices Emitter devices

1.1. SENSOR
These are devices which convert light into electricity.
Sensor
Photo emissive devices photo detector devices

Photo emissive devises

These are devices in which absorption of photon result in emission of
electron.
Photo emissive devises
Photo multiplier devices photo tube devices

Photo multiplier devices

It is a photo emissive device in which current is amplified by electrons
multiplication through a secondary emission.

It can give current amplification.

It operates at 1 to 5.
3 Composed by M.Sumair BS IT-18-39

Because of their ultraviolet light sensitivity low noise, extremely small current and
very fast response time (less than 1).
They are used in security latave and detector sensitive.

Photo tube or photo detector

These are devices which are used for detection of photon
Photo tube or photo detector
Photo voltaic photo conductive

Photo voltaic
When PN-Junction used without any biased they are made of silicon and
selenium.

Photo conductive
When PN-Junction is used with a reverse biased it is called photo
conductive.
Example: photo diode
They may be either bulb type or junction type.

Bulb type
They are made of single layer of photosensitive material and have no PN-
Junction.

Spectral response of human eye

Ultra-violet Blue Green Yellow Light Dark Infrared

1.0

0.8

0.6

0.4

0.2

0 400 500 600 700 800

4 Composed by M.Sumair BS IT-18-39

Figure show shows average response of human eye to the visible spectrum
extending to (400 to 760 NM). it is seen that peak sensitivity accure at 550NM
with green colour. Peaking in terms of colors human eye is more sensitive to blue,
green, yellow and less sensitive to violet and red colour.

Bulk type photo conductive cell:

The devices which are used with proper biasing operation

Principle
It based on the principle that the resistance of materials decreases when radiation
is exposed to the materials.

Construction
Electrodes
A conductor used to make electronically contact with materials called electrodes
bulk type photo conductive cell: -
(i) CDS
(ii) CDSE
(iii) PBS
(iv) TIS
Two electrodes are extended in the order to increase the contact
area with the materials.

Working

+ -|
5 Composed by M.Sumair BS IT-18-39

 When radiation of sufficient energy falls on a material then covalent bond

break away.
 There by generating an electron hole pair.
 Power supply is necessary to provide the path for the flow of current

Application of Bulk type photo conductive cell

(i) CDS are used in counting application.
(ii) CDS used in light meter.
(iii) CDS are used as voltage regulator.
(iv) Used in relay control.
(v) PBS and TIS are used in radar system.
(vi) CDS used in on/off switch.

Advantages of bulk type photo conductive cell

(i) Low cost.
(ii) High resistance ratio.
(iii) High sensitivity.

Disadvantages of photo conductive cell

(i) High responsive time
(I) Narrow spectral response

1.2. Emitter
These are devices used to convert electricity into light.
These are LED, IR and LASER

LED
These are semiconductor devices in which light is emition When an electric current flow
through.
It is forward biased PN-Junction.
6 Composed by M.Sumair BS IT-18-39

+ -
or p N

 o

Theory fig show that

1. It is a forward biased PN-Junction device in which light emit are activated.

2. As discussed emitter charge carrier recombination takes place when electron from
N-side cross the junction and recombine with the holes in P-side. During charger
combination release in the form of heat and light photon.
3. For semiconductor material SI and GE greater percentage of energy is released in
the form of heat.
4. For other type of materials Gallium Arsenide (GaAs), Glum phosphide (Gap)
gallium Arsenide phosphide (Gasp), energy released in the form of light.
5. If semiconductor materials are translucent (crystal which is transparent and light
can easily pass from it), light is emitted and Junction becomes energy source i.e.
6. The color of emitted light depends upon the types of materials given below: -
(i) GaAs IR.
(ii) Gap Blue or green.
(iii) GaAP Blue and Yellow.

Construction
7 Composed by M.Sumair BS IT-18-39

Light + ve Mattel contact

Holes

Electrons

-ve Mattel contact

7. Electron are N-side and holes are in p-side.
N layer is grow substrate and P-layer is deposited on it by diffusion.
Since carrier combination occur in P-side and it is kept upper most.
Mattel anode connection are placed at the outer edge of P-side.
Mattel cathode are at the bottom edge of N-side.

Used/ Application of LED

(i) Burglar alarm system.
(ii) These are used for numeric display in pocket calculator.
(iii) It is used for image sensing circuit in picture phone.

1.3 Photo diode

The devices in which we used reverse biased junction.
These are junction type photoconductive devices.
IT HAS FOLLOWING TYPES: -
(i) P-N junction photodiode
(ii) PIN photodiode
(iii) Avalanche photodiode
A. P-N junction photodiode
It has two terminal devices which is operated 1st reverse biased junction and then illuminated
it.
8 Composed by M.Sumair BS IT-18-39

In reverse biased junction amount of current is so small due to thermally generated electron
hole pair.
Basic diagram is:
P N

The diameter of these devices is 2.5 mm and they mounted to-5-pakages with a window to
allow minimum light
 A photo diode can turs current on and off in Nano second
 These devices are fast photo detector.
Uses
(i) These are used to detecting visible and invisible light.
(ii) Characteristic recognition
(iii) Optical communication equipment’s.
(iv) These are used in logic circuit where high speed required.
(v) Encoder
(vi) Switching.
(vii) Demodulation.
B. PIN photodiode
It is three region PN-junction device.
1. These are fast response then PN-junction photo diode.
9 Composed by M.Sumair BS IT-18-39

2. These are ultrafast device having switching speed of nanosecond. These devices
generate low noise.
3. These devices are capable of processing very weak signal
4. So these are widely used in electronic circuits
C. Avalanche photodiode
1. It is a PN-junction device which operated in avalanche break down region.
2. It is ultrafast device like PIN Photodiode
3. And can be operated at a frequently Geo Giga Hertz