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MITSUBISHI SEMICONDUCTOR 〈TRIAC〉

BCR1AM
LOW POWER USE
GLASS PASSIVATION TYPE

BCR1AM OUTLINE DRAWING Dimensions


in mm

φ5.0 MAX
4.4

5.0 MAX
VOLTAGE
2 CLASS
TYPE
NAME

3
1

12.5 MIN
1 T1 TERMINAL
2 T2 TERMINAL
3 GATE TERMINAL

CIRCUMSCRIBE
CIRCLE 1.25 1.25
φ0.7

1.3
3.9 MAX
1 3 2
• IT (RMS) ........................................................................ 1A
• VDRM ....................................................................... 600V
• IFGT !, IRGT !, IRGT # .............................. 5mA (3mA) ✽5
• IFGT # ..................................................................... 10mA JEDEC : TO-92

APPLICATION
Contactless AC switches, heating, refrigerator, washing machine, electric fan, vending machines,
trigger circuit for low and medium triac, solid state relay,
other general purpose control applications

MAXIMUM RATINGS
Voltage class
Symbol Parameter Unit
12
VDRM Repetitive peak off-state voltage ✽1 600 V
VDSM Non-repetitive peak off-state voltage ✽1 720 V

Symbol Parameter Conditions Ratings Unit


IT (RMS) RMS on-state current Commercial frequency, sine full wave 360° conduction, Tc=56°C ✽3 1.0 A
ITSM Surge on-state current 60Hz sinewave 1 full cycle, peak value, non-repetitive 10 A
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
I2t I2t for fusing 0.41 A2s
current

PGM Peak gate power dissipation 1 W


PG (AV) Average gate power dissipation 0.1 W
VGM Peak gate voltage 6 V
IGM Peak gate current 1 A
Tj Junction temperature –40 ~ +125 °C
Tstg Storage temperature –40 ~ +125 °C
— Weight Typical value 0.23 g
✽1. Gate open.

Mar. 2002
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉

BCR1AM
LOW POWER USE
GLASS PASSIVATION TYPE

ELECTRICAL CHARACTERISTICS
Limits
Symbol Parameter Test conditions Unit
Min. Typ. Max.
IDRM Repetitive peak off-state current Tj=125°C, VDRM applied — — 1.0 mA
VTM On-state voltage Tc=25°C, ITM=1.5A, Instantaneous measurement — — 1.6 V
VFGT ! ! — — 2.0 V
VRGT ! @ — — 2.0 V
Gate trigger voltage ✽2 Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
VRGT # # — — 2.0 V
VFGT # $ — — 2.0 V
IFGT ! ! — — 5 mA
IRGT ! @ — — 5✽5 mA
Gate trigger current ✽2 Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
IRGT # # — — 5✽5 mA
IFGT # $ — — 10 mA
VGD Gate non-trigger voltage Tj=125°C, VD=1/2VDRM 0.1 — — V
Rth (j-c) Thermal resistance Junction to case ✽3 — — 50 °C/ W

Critical-rate of rise of off-state ✽4


(dv/dt)c Tj=125°C 2 — — V/µs
commutating voltage

✽2. Measurement using the gate trigger characteristics measurement circuit.


✽3. Case temperature is measured at the T2 terminal 1.5mm away from the molded case.
✽4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
✽5. High sensitivity (IGT ≤ 3mA) is also available. (IGT item 1)

Commutating voltage and current waveforms


Test conditions (inductive load)

SUPPLY
1. Junction temperature VOLTAGE TIME
Tj=125°C
MAIN CURRENT (di/dt)c
2. Rate of decay of on-state commutating current
TIME
(di/dt)c=–0.5A/ms
MAIN
3. Peak off-state voltage VOLTAGE TIME
VD=400V
(dv/dt)c VD

PERFORMANCE CURVES

MAXIMUM ON-STATE CHARACTERISTICS RATED SURGE ON-STATE CURRENT


102 10
7
SURGE ON-STATE CURRENT (A)

5 TC = 25°C
ON-STATE CURRENT (A)

3 8
2
101
7 6
5
3
2
4
100
7
5
2
3
2
10–1 0
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 100 2 3 4 5 7 101 2 3 4 5 7 102

ON-STATE VOLTAGE (V) CONDUCTION TIME


(CYCLES AT 60Hz)

Mar. 2002
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉

BCR1AM
LOW POWER USE
GLASS PASSIVATION TYPE

GATE TRIGGER CURRENT VS.


GATE CHARACTERISTICS JUNCTION TEMPERATURE

100 (%)
101 103
7 PGM = TYPICAL EXAMPLE
5 1W 7
VGM = 6V PG(AV) 5
3 = 0.1W 4
2
GATE VOLTAGE (V)

GATE TRIGGER CURRENT (Tj = 25°C)


3

GATE TRIGGER CURRENT (Tj = t°C)


100 IGM = 1A 2
7
5 IFGT I, IRGT I
IFGT I 102
3 IRGT I
2 IRGT III IFGT III 7
10–1 5
7 4 IRGT III, IFGT III
5 VGD = 0.1V 3
3 2
2
10–2 101
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 –60 –40 –20 0 20 40 60 80 100 120 140

GATE CURRENT (mA) JUNCTION TEMPERATURE (°C)

MAXIMUM TRANSIENT THERMAL


GATE TRIGGER VOLTAGE VS. IMPEDANCE CHARACTERISTICS
JUNCTION TEMPERATURE
102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105
100 (%)

TRANSIENT THERMAL IMPEDANCE (°C/W)

103 103
7 TYPICAL EXAMPLE 7
5
5
4 3
2
GATE TRIGGER VOLTAGE (Tj = 25°C)

3 JUNCTION TO AMBIENT
GATE TRIGGER VOLTAGE (Tj = t°C)

2 102
7
VFGT I, VRGT I 5
102 JUNCTION TO CASE
3
7 2
5 101
4 7
3 VRGT III, VFGT III 5
2 3
2
101 100
–60 –40 –20 0 20 40 60 80 100 120 140 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102

JUNCTION TEMPERATURE (°C) CONDUCTION TIME


(CYCLES AT 60Hz)

MAXIMUM ON-STATE POWER ALLOWABLE CASE TEMPERATURE


DISSIPATION VS. RMS ON-STATE CURRENT
2.0 160
ON-STATE POWER DISSIPATION (W)

CURVES APPLY REGARDLESS


140 OF CONDUCTION ANGLE
CASE TEMPERATURE (°C)

1.6 RESISTIVE, INDUCTIVE LOADS


120

1.2 100
360°
80 360°
CONDUCTION
CONDUCTION
0.8 RESISTIVE,
INDUCTIVE 60
LOADS
40
0.4
20

0 0
0 0.4 0.8 1.2 1.6 2.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

RMS ON-STATE CURRENT (A) RMS ON-STATE CURRENT (A)

Mar. 2002
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉

BCR1AM
LOW POWER USE
GLASS PASSIVATION TYPE

REPETITIVE PEAK OFF-STATE

100 (%)
ALLOWABLE AMBIENT TEMPERATURE CURRENT VS. JUNCTION
VS. RMS ON-STATE CURRENT TEMPERATURE
160 105
CURVES APPLY REGARDLESS 7 TYPICAL EXAMPLE

REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25°C)


5
AMBIENT TEMPERATURE (°C)

140 OF CONDUCTION ANGLE

REPETITIVE PEAK OFF-STATE CURRENT (Tj = t°C)


NATURAL CONVECTION 3
120 NO FINS 2
104
100 7
RESISTIVE, 5
80 INDUCTIVE 3
LOADS 2
60
103
7
40 5
3
20 2
0 102
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 –60 –40 –20 0 20 40 60 80 100 120 140

RMS ON-STATE CURRENT (A) JUNCTION TEMPERATURE (°C)

HOLDING CURRENT VS. LACHING CURRENT VS.


JUNCTION TEMPERATURE JUNCTION TEMPERATURE
103 103

;;;;;;;;;;;
100 (%)

7 TYPICAL EXAMPLE 7 DISTRIBUTION T2+, G–


5

;;;;;;;;;;;
TYPICAL
5
LACHING CURRENT (mA)

;;;;;;;;;;;
4 EXAMPLE
2

;;;;;;;;;;;
3
HOLDING CURRENT (Tj = 25°C)

102
HOLDING CURRENT (Tj = t°C)

;;;;;;;;;;;
2
7

;;;;;;;;;;;
5
102

;;;;;;;;;;;
3
7 2
5
4
3
101
7
5
;;;;;;;;;;;
;;;;;;;;;;;
 T2+, G+
 – – TYPICAL
 T2 , G
3  T2– , G+ EXAMPLE
2 
2
101 100
–60 –40 –20 0 20 40 60 80 100 120 140 –60 –40 –20 0 20 40 60 80 100 120 140

JUNCTION TEMPERATURE (°C) JUNCTION TEMPERATURE (°C)

BREAKOVER VOLTAGE VS.


BREAKOVER VOLTAGE VS. RATE OF RISE OF
JUNCTION TEMPERATURE OFF-STATE VOLTAGE
100 (%)

160 160
100 (%)

TYPICAL EXAMPLE TYPICAL EXAMPLE


140 140 Tj = 125°C
BREAKOVER VOLTAGE (dv/dt = 1V/µs )
BREAKOVER VOLTAGE (dv/dt = xV/µs )

120 120
BREAKOVER VOLTAGE (Tj = 25°C)
BREAKOVER VOLTAGE (Tj = t°C)

I QUADRANT
100 100

80 80

60 60
III QUADRANT
40 40

20 20

0 0
–60 –40 –20 0 20 40 60 80 100120 140 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103

JUNCTION TEMPERATURE (°C) RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)

Mar. 2002
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉

BCR1AM
LOW POWER USE
GLASS PASSIVATION TYPE

GATE TRIGGER CURRENT VS.


COMMUTATION CHARACTERISTICS GATE CURRENT PULSE WIDTH
CRITICAL RATE OF RISE OF OFF-STATE

101 103

100 (%)
7 TYPICAL EXAMPLE TC = 125°C TYPICAL EXAMPLE
COMMUTATING VOLTAGE (V/µs)

7
5 IT = 1A 5
4 τ = 500µs 4
3 VD = 200V 3

GATE TRIGGER CURRENT (DC)


GATE TRIGGER CURRENT (tw)
2 2
MINIMUM III QUADRANT
100 CHARAC- 102
TERISTICS
7 7 IFGT I
VALUE
5 5 IFGT III
4 4 IRGT III
3 I QUADRANT 3 IRGT I
2 2

10–1 –1 101 0
10 2 3 4 5 7 100 2 3 4 5 7 101 10 2 3 4 5 7 101 2 3 4 5 7 102

RATE OF DECAY OF ON-STATE GATE CURRENT PULSE WIDTH (µs)


COMMUTATING CURRENT (A /ms)

GATE TRIGGER CHARACTERISTICS


TEST CIRCUITS

6Ω 6Ω

6V A 6V A
V RG V RG

TEST PROCEDURE 1 TEST PROCEDURE 2

6Ω 6Ω

A A
6V 6V
V RG V RG

TEST PROCEDURE 3 TEST PROCEDURE 4

Mar. 2002
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www.datasheetcatalog.com

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