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SEMICONDUCTOR TECHNICAL DATA by BC450/D

  

PNP Silicon

COLLECTOR
1

2
BASE

3
EMITTER

MAXIMUM RATINGS
1
Rating Symbol Value Unit 2
3
Collector – Emitter Voltage VCEO –100 Vdc
CASE 29–04, STYLE 17
Collector – Base Voltage VCBO –100 Vdc
TO–92 (TO–226AA)
Emitter – Base Voltage VEBO –5.0 Vdc
Collector Current — Continuous IC –300 mAdc
Total Device Dissipation @ TA = 25°C PD 625 mW
Derate above 25°C 5.0 mW/°C
Total Device Dissipation @ TC = 25°C PD 1.5 Watt
Derate above 25°C 12 mW/°C
Operating and Storage Junction TJ, Tstg – 55 to +150 °C
Temperature Range

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient RqJA 200 °C/W
Thermal Resistance, Junction to Case RqJC 83.3 °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1) V(BR)CEO –100 — — Vdc
(IC = –1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage V(BR)CBO –100 — — Vdc
(IC = –100 mA, IE = 0)
Emitter – Base Breakdown Voltage V(BR)EBO –5.0 — — Vdc
(IE = –10 mAdc, IC = 0)
Collector Cutoff Current ICBO — — –100 nAdc
(VCB = –80 Vdc, IE = 0)

ON CHARACTERISTICS*
DC Current Gain hFE —
(IC = –2.0 mA, VCE = –5.0 V) BC450 50 — 460
BC450A 120 — 220
(IC = –10 mA, VCE = –5.0 V) BC450 50 — —
BC450A 100 — —
(IC = –100 mA, VCE = –5.0 V) BC450 50 — —
BC450A 60 — —

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle 2.0%.

Motorola Small–Signal Transistors, FETs and Diodes Device Data 1

 Motorola, Inc. 1996
BC450,A

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS(1) (Continued)
Collector – Emitter Saturation Voltage VCE(sat) — –0.125 –0.25 Vdc
(IC = –100 mAdc, IB = –10 mAdc)
Base – Emitter Saturation Voltage VBE(sat) — –0.85 — Vdc
(IC = –100 mAdc, IB = –10 mAdc)
Base – Emitter On Voltage VBE(on) Vdc
(IC = –2.0 mA, VCE = –5.0 V) –0.55 — –0.7
(IC = –100 mA, VCE = –5.0 V)* — –0.76 –1.2

DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product fT 100 200 — MHz
(IC = –50 mAdc, VCE = –5.0 Vdc, f = 100 MHz)

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle 2.0%.

TURN–ON TIME TURN–OFF TIME

–1.0 V VCC +VBB VCC

5.0 µs +40 V +40 V
100 RL 100 RL
+10 V OUTPUT OUTPUT
Vin RB Vin RB
0
tr = 3.0 ns 5.0 µF 5.0 µF
100 *CS < 6.0 pF 100 *CS < 6.0 pF

5.0 µs
tr = 3.0 ns

* Total Shunt Capacitance of Test Jig and Connectors

For PNP Test Circuits, Reverse All Voltage Polarities

Figure 1. Switching Time Test Circuits

2 Motorola Small–Signal Transistors, FETs and Diodes Device Data

 BC450,A

f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)

300 40
TJ = 25°C TJ = 25°C
200
–5.0 V 20 Cibo

C, CAPACITANCE (pF)
VCE = –1.0 V
100 10
8.0
70 6.0
Cobo
50 4.0

30 2.0
–1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100
IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS)

Figure 2. Current–Gain — Bandwidth Product Figure 3. Capacitance

1000
700 VCC = –40 V
500 IC/IB = 10
ts IB1 = IB2
300 TJ = 25°C
200
t, TIME (ns)

100 tf
70
50
tr
30
20
td @ VBE(off) = –0.5 V
10
–10 –20 –30 –50 –70 –100 –200
IC, COLLECTOR CURRENT (mA)

Figure 4. Switching Times

1.0
0.7
r(t) TRANSIENT THERMAL RESISTANCE

D = 0.5
0.5

0.3 0.2
0.1 P(pk)
0.2
(NORMALIZED)

t1
0.1 0.02 t2
0.07 0.01 DUTY CYCLE, D = t1/t2
0.05 SINGLE PULSE D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
0.03 SINGLE PULSE READ TIME AT t1 (SEE AN–469)
0.02 ZθJC(t) = r(t) • RθJC TJ(pk) – TC = P(pk) ZθJC(t)
ZθJA(t) = r(t) • RθJA TJ(pk) – TA = P(pk) ZθJA(t)
0.01
1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k
t, TIME (ms)

Figure 5. Thermal Response

Motorola Small–Signal Transistors, FETs and Diodes Device Data 3

BC450,A

–1K 1.0
TJ = 25°C
IC, COLLECTOR CURRENT (mA) –500
0.8

V, VOLTAGE (VOLTS)
VBE(sat) @ IC/IB = 10
–200
0.6
–100 VBE @ VCE = 5.0 V

0.4
–50
THERMAL LIMIT
SECOND BREAKDOWN LIMIT 0.2
–20
CURRENT LIMIT VCE(sat) @ IC/IB = 10
DUTY CYCLE ≤ 10% BC450
–10 0
–1.0 –2.0 –5.0 –10 –20 –50 –80 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200
VCE, COLLECTOR–EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (mA)

Figure 6. Active Region — Safe Operating Area Figure 7. “On” Voltages

VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)

2.0 –1.0

RθVB, TEMPERATURE COEFFICIENT (mV/°C)

TJ = 25°C

1.6 –1.4

1.2 –1.8
20 mA 50 mA 100 mA 200 mA
RθVB for VBE
–55°C to 125°C
0.8 –2.2

0.4 –2.6
IC =
10 mA
0 –3.0
0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200
IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 8. Collector Saturation Region Figure 9. Base–Emitter Temperature Coefficient

300
TJ = 125°C VCE = –5.0 V
200
hFE , DC CURRENT GAIN

25°C

100

70 –55°C

50

30
–0.2 –0.3 –0.5 –0.7 –1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100 –200
IC, COLLECTOR CURRENT (mA)

Figure 10. DC Current Gain

4 Motorola Small–Signal Transistors, FETs and Diodes Device Data

 BC450,A

VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)

1.0 2.0
TJ = 25°C
0.8 1.6
VBE(sat) @ IC/IB = 10 IC =
V, VOLTAGE (VOLTS)

10 mA 20 mA 50 mA 100 mA 200 mA
0.6 1.2
VBE @ VCE = 5.0 V

0.4 0.8

0.2 0.4
VCE(sat) @ IC/IB = 10
TJ = 25°C
0 0
0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
IC, COLLECTOR CURRENT (mA) IB, BASE CURRENT (mA)

Figure 11. “On” Voltages Figure 12. Collector Saturation Region

–1.0
RθVB, TEMPERATURE COEFFICIENT (mV/°C)

–1.4

–1.8
RθVB for VBE
–55°C to 125°C
–2.2

–2.6

–3.0
0.2 0.5 1.0 2.0 5.0 10 20 50 100 200
IC, COLLECTOR CURRENT (mA)

Figure 13. Base–Emitter Temperature Coefficient

Motorola Small–Signal Transistors, FETs and Diodes Device Data 5

BC450,A

PACKAGE DIMENSIONS

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
A B
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
R 4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
P MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
L
SEATING F
PLANE K INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 0.175 0.205 4.45 5.20
D B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
J D 0.016 0.022 0.41 0.55
X X F 0.016 0.019 0.41 0.48
G G 0.045 0.055 1.15 1.39
H H 0.095 0.105 2.42 2.66
SECTION X–X J 0.015 0.020 0.39 0.50
V C K 0.500 ––– 12.70 –––
L 0.250 ––– 6.35 –––
N 0.080 0.105 2.04 2.66
1 N P ––– 0.100 ––– 2.54
R 0.115 ––– 2.93 –––
N V 0.135 ––– 3.43 –––

STYLE 17:
CASE 029–04 PIN 1. COLLECTOR
2. BASE
(TO–226AA) 3. EMITTER
ISSUE AD

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*BC450/D*
6 ◊ BC450/D
Motorola Small–Signal Transistors, FETs and Diodes Device Data