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13. What are the similarities between electrical and thermal conductivity of metals?
a) The electrical and thermal conductivity decreases with increase in temperature and impurities.
b) The electrical and thermal conductivities are very high at low temperature.
14. What are the sources of resistance in metals? (June 2014)
The resistance in metals is due to a) Impurities present in the metals b) Temperature of the metal
c) Number of free electrons in the metal.
15. What are the drawbacks of classical free electron theory?
a) It is predicted that the value of electronic specific heat as (3/2)R,but experimentally it is about
0.01R only.
b) The ratio between thermal conductivity and electrical conductivity is not constant at low
temperatures.
c) The theoretical value of paramagnetic susceptibility is greater than the experimental value.
d) The electrical conductivity of semiconductors, ferromagnetism, photoelectric effect and black
body radiation cannot be explained.
16. What are the merits of classical free electron theory?
a) It verifies Ohms law.
b) It explains the electrical conductivity and thermal conductivity of metals.
c) It is used to derive Wiedemann – Franz law.
17. Discuss the variation of resistivity of a conductor with respect to temperatures.
The variation of resistivity of a conductor with respect to temperatures can be explained as follows
a) The resistivity of a conductor remains almost constant at lower temperatures.
b) The resistivity is proportional to T5 from low temperature to the Debye temperature.
18. Define Fermi energy level and give its importance.
It is the state at which the probability of electron occupation is 50% at any temperature above 0 K
and it is the level of maximum energy of the filled states at 0 K.
Importance:
It is the reference level which separates the filled energy levels and vacant energy levels.
19. Define Fermi surface.
Fermi surface (or ) Fermi sphere is defined as the surface which is traced out by joining the loci of
the end points of the wave vector k corresponding to the Fermi energy level.
20. What are the differences between quantum theory and zone theory?
S.No Quantum theory Zone theory
1. The electron is assumed to move in a region of The electron is assumed to move in a region of periodic
constant potential. potential.
2. According to this theory the mass of the electron According to this theory the mass of the electron varies
remains constant, when it moves through constant when it moves through periodic potential and is called
potential. effective mass of an electron.
21. Write the Fermi-dirac distribution function. (or) Define Fermi distribution function.
Fermi-dirac distribution function represents the probability of an electron occupying a given energy
level. F(E) =1/(1+e(E-EF)/KT)
22. Mention any two important features of quantum free electron theory of metals.
a) It shows that the energy levels of an electron are discrete.
b) The maximum energy level up to which the electron can be filled at 0 K is denoted by Fermi
energy level.
23. Define density of states. What is its use? (Dec 2012)
Density of states is defined as the number of energy states per unit volume in an energy interval.
It is used to determine Fermi energy at any temperature.
24. What is work function?
The amount of kinetic energy required to move an electron from the outer orbit at absolute zero
temperature is called work function.
25. Use Fermi distribution function to obtain the value of F(E) for E-EF = 0.01 eV at 200 K.
F(E) =1/(1+e(E-EF)/KT); F(E) = 1/(1+e0.5797) = 0.359
28. Calculate the electrical conductivity in copper if the mean free path of electrons is 4x10-8 m,
electron density is 8.4x1028 m-3 and average thermal velocity of an electron is 1.6x106 m/s.
σ = ne2/m= [(8.4x1028)x(1.6x10-19)2x(4x10-8)] / [(9.11x10-31)x (1.6x106)] = 5.9 x 107 mho m-1
29. Find the relaxation time of conduction electrons in a metal of resistivity 1.54x10 -8 ohm-m if the
metal has 5.8x1028 conduction electrons / m3.
τ = m/ne2 = 9.11x10-31 / [(5.8x1028)x(1.6x10-19)2x(1.54x10-8)] = 3.97x10-14 s
30. Find the drift velocity of the free electrons in a copper wire whose cross sectional area is 1.0 mm 2
when the wire carries a current of 1 A. Assume that each copper atom contributes one electron
to the electron gas. Given n = 8.5x1028/m3.
d = I/neA = 1/ [(8.5x1028)x(1.6x10-19)x(1.6x10-6)] = 7.4x10-5 m/s.
31. Free electron density of aluminium is 18.10x1028m-3. Calculate is Fermi energy at 0K.
2
3𝑁 3 ℎ 2
Fermi energy at 0K 𝐸𝐹0 = ( 𝜋 ) 8𝑚
2
3𝑋18.10𝑋1028 3 (6.623𝑋10−34 )2
=( 3.14
) 8𝑋9.1 𝑋10−31 = 1.8689 X10-18 joules (or) 11.68 eV
32. Using the Fermi function, evaluate the temperature at which there is 1% probability that an
electron in a solid will have energy 0.5eV above EF of 5eV.
𝟏 𝑬−𝑬𝑭⁄ 𝟏 𝑬−𝑬𝑭⁄ 𝟏
𝑭(𝑬) = 𝑬−𝑬𝑭 =𝟏+𝒆 𝒌𝑻 = 𝑭(𝑬) , 𝒆 𝒌𝑻 = 𝑭(𝑬) − 𝟏
⁄
𝟏+𝒆 𝒌𝑻
𝐸− 𝐸𝐹 1 𝐸− 𝐸𝐹
Taking log on both sides, we have, = log [ − 1];𝑇 = 1
𝐾𝐵 𝑇 𝐹(𝐸) 𝐾𝐵 log[ −1]
𝐹(𝐸)
0.5 𝑋 1.6𝑋10−19 0.8𝑋10−19
𝑇= 1 =1.38𝑋10−23 𝑋 log[99] = 1261.6 K.
1.38𝑋10−23 𝑋 log[ −1]
0.01
33. A conducting rod contains 8.5x1028/m3. Calculate the electrical conductivity and mobility of
electron if collision time is 2x10-14sec.
σ = ne2τ/m[(8.5x1028)x(1.6x10-19)2x(2x10-14)] / [(9.11x10-31)] = 4.83 x 107 mho m-1
ρ = 1/σ = 1/(4.83x107) = 2.07x10-8 ohm m
σ = neμ or μ = σ/ne = 0.35 x10-2m2s-1V-1
34. Obtain the expression for electrical resistivity and also discuss its dependence on temperature.
σ = ne2τ/m and ρ = 1/ σ = m/ne2τ
In metal, numbers of charge carriers are constant and μ decrease with temperature.
Hence resistivity increases with increasing temperature.
35. Fermi temperature of a metal is 24600 K. Calculate the Fermi velocity of electrons. (May 2015)
(Given KB = 1.38x10-23 JK-1, m = 9.1x10-31 kg.)
The relation between Fermi energy, Fermi velocity and Fermi temperature is given by
1 2𝐾𝐵 𝑇𝐹 2𝑋1.38x10−23 X 24600
𝐸𝐹 = 𝐾𝐵 𝑇𝐹 = 2
𝑚𝑣𝐹2, 𝑣𝐹 = √ 𝑚
= √ 9.11𝑋10−31
= 0.8633 x 106ms-1.
36. What are the essential features of quantum free electron theory? (June 2016)
In metal, the electrons move freely within the metal and they are not allowed to leave the metal due
to existence of potential barrier at its surfaces. These free electrons have wave nature and they obeyed
Fermi – Dirac statistics.
37. What is Kronig-Penney model?
It is a theory which is able to predict the detailed band structure and electron dynamics within the
actual crystal structures.
PART – B
1. State and prove Wiedemann – Franz law.
2. Deduce a mathematical expression for electrical and thermal conductivities on the basis of classical
free electron theory and deduce the value of Lorentz number. (June 2014)
3. (i) What are the postulates of free electron theory?
(ii) Derive an expression for electrical conductivity.
(iii) Get the microscopic form of Ohms law.
4. (a) On the basis of free electron theory derive an expression for electrical conductivity. (May 2015)
(b) What are the drawbacks of classical free electron theory of metals? (May 2015)
(c) What are the sources of resistance in metals?
5. Give the mathematical expression for electrical conductivity and thermal conductivity of a conducting
material. (April 2012, June 2016)
6. Describe the classical free electron theory and deduce Lorentz number. Also discuss the merits and
demerits of classical free electron theory.
7. Write Fermi-Dirac distribution function. Explain how Fermi function varies with temperature.
(June 2011, June 2016)
8. Derive an expression for the density of states and based on that, calculate the carrier concentration in
metals. (Dec 2012)
9. With a neat diagram, derive an expression for density of states.
10. i) Based on classical free electron theory, arrive at the Wiedemann-Franz law.
ii) Draw a graph showing the variation of Fermi level with change in temperature for the
conducting material and explain it. (June 2011)
11. Explain the concept of density of energy states. Derive an expression of density of energy states.
Find the expression for carrier concentration in metals. (May 2015)
12. A metal wire of length5.8 m and diameter of 2.0 mm carries a current of 750 mA. When the applied
potential across its ends is 22 mV and the drift speed of electrons is 7.2 x 105m/s, calculate the
electrical resistivity of the wire and the conduction electron density of the material of the wire.
(June 2016)
13. The electrical conductivity of Cu at room temperature is 5.9 x 107 mho m-1 . The Fermi energy for Cu
is 7.0 eV and the conduction electron density is 8.4x1028 m-3. Calculate the Fermi velocity and mean
free path of the electrons. (June 2016)
14. Derive an expression for the effective mass of an electron or concept of hole.
15. Describe tight binding approximation to explain the formation of energy band.
4. They have low operating temperature. They have high operating temperature.
11. Write the expression for the electrical conductivity of an intrinsic semiconductor.
Electrical conductivity σ = ni μe + μh e
Where, ni – intrinsic carrier concentration, µe – mobility of electrons, µh – mobility of holes
12. Write an expression for electrical conductivity of an intrinsic semiconductor. (Dec 2012)
3 Eg
2kT 2 3
σ i = 2e 2 me* mh* 4 e μe + μ h
2 kT
h
13. Write the expression for the electrical conductivity of an intrinsic semiconductor in terms of
forbidden energy gap. How one can measure energy gap experimentally?
Electrical conductivity, σi = Aexp(- Eg / 2KBT), Where A is a constant. Taking logarithm on both
sides log σi =log A – (Eg/2KBT). Graph is drawn between the conductivity and temperature. Slope of
the straight line obtained gives Eg/2KBT.
Hence Eg= 2KB x slope, Where KB is called Boltzmann constant.
14. How are n-type & p-type semiconductors are produced? (May 2009)
When a small amount of pentavalent impurity is doped to a pure semiconductor it becomes n-type
semiconductor. When a small amount of trivalent impurity is doped to a pure semiconductor it
becomes p-type semiconductor.
15. Explain the concept of hole. (May 2012)
When a covalent bond is broken an electron escapes to the conduction band leaving behind an
empty space in the valence band. This vacant site of an electron is called a hole.
16. Compare n- type and p- type semiconductors. (June 2008, June 2010)
S.No n - type semiconductors p - type semiconductors
It is obtained by doping an intrinsic It is obtained by doping an intrinsic semiconductor
1. semiconductor with pentavalent impurity. with trivalent impurity.
It has donor energy level very close to the It has acceptor energy level very close to the valence
2.
conduction band. band.
17. What is meant by donor energy level?
When a pentavalent impurity is doped with an intrinsic semiconductor, an energy level is produced
by an electron. It is called donor energy level.
18. What is meant by acceptor energy level?
When a trivalent or an acceptor impurity is doped with an intrinsic semiconductor accepts one
electron which produces an energy level called acceptor energy level.
19. Write an expression for carrier concentration of holes in the valence band of p-type
semiconductor.
3⁄
1 2𝜋𝑚ℎ∗ 𝑘𝑇 4 𝐸𝑉 −𝐸𝑎⁄
𝑛𝑒 = (2𝑁𝑎 ) ⁄2 ( ) 𝑒( 2𝑘𝑇 )
ℎ2
20. With increase of temperature, the conductivity of a semiconductor increases. Why? (May 2015)
When the temperature of the semiconductor is increased, large no. of charge carriers are produce
due to the breaking of covalent bonds and hence the conductivity increases and therefore the resistivity
decreases.
21. Draw the graph for variation of Fermi level with temperature in n-type semiconductor.
22. Discuss the variation of Fermi level with temperature in the case of p-type & n-type
semiconductor.
p - type semiconductor : Fermi level shifts up and reaches the middle of the band gap by increasing
temperature.
n - type semiconductor: Fermi level shifts down and reaches the middle of the band gap by
increasing temperature up to 500 K.
23. Draw the graph for variation of Fermi level with temperature in p-type semiconductor. (June 13)
28. Given an extrinsic semiconductor, how will you find whether it is n-type or p-type? (June 2016)
The n-type and p-type semiconductors can be distinguished by determining the Hall Coefficient
using Hall Effect. If the Hall coefficient is negative, then we can say that the material is n-type. And if
the Hall coefficient is positive, then we can say that the material is p-type.
29. The mobility of electrons and holes in a sample of intrinsic Ge at 300 K are 0.36 & 0.17 m2 V-1 s-1
respectively. Find the carrier concentration, if the resistivity of the specimen is 2.12 Ωm
nieeh, σ = 1/ρ
= 5.5 x 1018/m3
30. For intrinsic Ge at 300K, = 2.4 x 1019/m3, µe and µh are 0.39 and 0.19 m2V-1s-1 respectively.
Calculate the conductivity.
nieeh= 2.4x1019x1.609x10-19(0.39 + 0.19) = 2.2 ohm-1m-1
31. Find the resistance of an intrinsic Ge rod of 1 cm long 1 mm wide and 1 mm thick at 300 K. The
intrinsic carrier density is 2.5 x 1019/m3 at 300 K and the mobilities of electron and hole are 0.39
and 0.19 m2 V-1 s-1 respectively. (Oct 2009)
σ = ni μe + μh e = 2.32 Ω-1m-1
Resistance=ρl/A or l/σA= 4310 ohms.
32. The intrinsic carrier density at room temperature in Ge is 2.37 x 1019/m3. If the electron and
hole mobilities are 0.38 and 0.18 m2 V-1 s-1 respectively, calculate its resistivity. (Dec 2010)
Conductivity, σ = ni μe + μh e = 2.1235 Ω-1m-1
Resistivity, ρ = 1/ σ = 0.4709 Ωm.
33. A sample of n-type semiconductor with a current density of 50A/m2, flowing across, it is subjected
to a transverse magnetic field of 0.2 T. If the Hall field developed is 3 X 10 -4 V/m, calculate the
concentration of conduction electrons. (June 2011)
ne = Jx.B/ EH.e= (50 x 0.2)/(3x10-4 x 1.602x10-19) = 2.0807 x1023 /m3.
34. If the effective mass of an electron is equal to twice the effective mass of the hole, determine the
position of the Fermi level in an intrinsic semiconductor from the centre of forbidden gap at
room temperature.
;
The Fermi level is below the centre of the forbidden gap by 0.014 eV
35. A semiconductor crystal 12 mm long, 5 mm wide, and 1 mm thick has a magnetic flux density of
0.5 wb/m2 applied from front to back perpendicular to longest faces. When a current of 20mA
flows lengthwise through the specimen, the voltage measured across the width is found to be
37µV. What is the Hall coefficient of the semiconductor? (Dec 2009)
RH= VHb/IHB = 3.7x10-6 C-1m3
36. Compared with Ge, Si is widely used to manufacture the semiconducting devices. Why?
(June 2013)
The advantages of Si over Ge are:
Stable and strong material &structure of the crystal is like diamond.
Si has a wider band gap than Ge.
High operating temperature (125-175 oC vs. ~ 85 oC) and become intrinsic at higher temp.
Si is cheap and abundant.
37. What is electron binding energy?
Electron binding energy or ionization potential is the energy which is required to remove
an electron from an atom, a molecule, or an ion.
38. Define law of mass action.
The law of mass action states that the product of number of electrons in the conduction band and the
number of holes in the valence band is constant at a fixed temperature and is independent of amount of
donor and acceptor impurity added.
St.Joseph’s College of Engineering/St. Joseph’s Institute of Technology 8
Code &Subject: PH8252 & Physics for Information Science, Dept. Name : PHYSICS Academic Year : 2017- 2018
PART – B
1. Derive an expression for density of electrons in conduction band of an intrinsic semiconductor.
2. Derive an expression for density of holes in valence band of an intrinsic semiconductor.
3. (i) Derive an expression for the carrier concentration in an intrinsic semiconductor. (June 2014)
(ii) Discuss the variation of Fermi level with temperature in an intrinsic semiconductor. (Jan 2016)
4. Describe a method of determining the band gap of a semiconductor. How does electrical conductivity
vary with temperature for an intrinsic semiconductor?
5. Derive an expression for a density of electrons in conduction band of a n-type semiconductor.
6. Derive an expression for a density of holes in the valence band of p-type semiconductor. (Jan 2016)
7. Discuss the variation of carrier concentration with temperature in n-type semiconductor.
8. What is Hall Effect? Derive an expression of Hall co-efficient. Describe an experiment to find Hall
coefficient and Hall Voltage. (June 2014, May 2015)
9. (i) What are elemental and compound semiconductors? Give two examples. Compare their
characteristics. (June 2011)
(ii) Describe the Hall Effect experiment to determine the Hall Coefficient and Hall Mobility
10. Silicon contains 5 x1028 atoms/m3. In an n-type Si sample the donor concentration is 1 atom per
2.5 x 107 Si atoms. Find out the position of Fermi level at 300 K. Assume that effective mass of an
electron is equal to the free electron mass.
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Code &Subject: PH8252 & Physics for Information Science, Dept. Name : PHYSICS Academic Year : 2017- 2018
11. A sample of silicon doped with 1023 phosphorous atoms/m3. Find the Hall Voltage in a sample with a
thickness 100 µm, current 1 mA and magnetic field as 0.1 Wb/m2 (Assume µe = 0.07 µm/vs)
12. The Hall coefficient of the specimen of doped silicon is found to be 3.66x10-4 m-3/C. The resistivity of
the specimen is 8.93x10-3 Ωm. Find the mobility and density of the charge carriers. (Dec 2010)
13. The donor density of an n-type Ge sample is 1021/m3. The sample is arranged in Hall Experiment
having magnetic field of 0.5 T and the current density is 500 A/m2. Find the Hall Voltage if the
sample is 3mm wide. (May 2007)
14.(i) Explain the structure and working of a Schottky Diode.
(ii) Write a note on Ohmic contact.
19. Mention the energies involved in domains of ferromagnetic material. (June 2009)
1. Exchange Energy 2. Anisotropic Energy
3. Domain Wall Energy 4. Magnetostriction Energy.
20. Define Energy product of a magnetic material. Give its importance in the case of permanent
magnets.
The product of retentivity and coercivity is called the energy product. It represents the maximum
amount of energy stored in the specimen.
It gives the maximum energy stored in the magnets which helps in distinguishing a weak and strong
magnet. Therefore for permanent magnets the value of energy product should be very high.
21. What is domain theory of ferromagnetism? (Oct 2009)
The domain theory of ferromagnetism is the explanation of the structure and Hysteresis
property of ferromagnetic materials based on the concept of domains proposed by Weiss.
Ferromagnetic material consists of a number of regions called domains which are spontaneously
magnetized due to parallel alignment of all magnetic dipoles. The direction of spontaneous
magnetization varies from domain to domain.
22. What is meant by hysteresis loop? What do you infer from it. (June 2014)
Hysteresis loop represents the behavior of magnetization with respect to a cyclic variation of
applied magnetic field. We can infer the magnetic nature of a material from hysteresis loop.
23. What is anti-ferromagnetism? Give examples of antiferromagnetic materials? (June 2010)
In anti-ferromagnetism, electron spin of neighboring atoms are aligned anti-parallel. Anti-
ferromagnetic susceptibility is small and positive and it depends greatly on temperature.
Ex:-MnO, MnS
24. What are ferrimagnetic materials and mention its properties? (June 2013)
Ferrites which exhibit ferrimagnetism are called ferrimagnetic materials. Susceptibility is positive and
very large, there are equal numbers of opposite spins with different magnitudes such that the
orientation of neighbouring spins is in anti-parallel manner.
25. Why are ferrites advantageous for use as transformer cores? (Dec 2010)
Ferrites are advantageous for use as transformer cores. Reason:
(i) Low HC.
(ii)Low eddy current loss.
26. The magnetic field strength of copper is 106 ampere/metre if the magnetic susceptibility of copper
is -0.8 X 10-5, calculate the magnetic flux density and magentisation in copper?
χ = I/H, I = χ H= 8 ampere/metre
µr = 1+ χ= 0.999
B= µH= µ0 µrH = 1.26 weber/metre2
27. A magnetic field of 1800 ampere/metre produces a magnetic flux of 3X10-5 weber in an iron bar of
cross sectional area 0.2 cm2. Calculate the permeability?
B = ϕ/A=1.5 Weber/m2
µ= B/H= 8.33 X10-4 Henry/metre
28.The saturation magnetic induction of nickel is 0.65 Wb/m2. If the density of Nickel is 8906 kg/m3
and atomic weight is 58.7. Calculate the magnetic moment of the nickel atom in Bohr magneton.
µ m = Bs/ Nµ0 = N = ρ A / atomic weight = 9.14 x 1028 atoms per m3
µ m = 5.66 x 10-24 A m2 =0 .61 µB
29. A paramagnetic material has a magnetic field intensity of 104 A/m. If the susceptibility of the
material at room temperature is 3.7x10-3.Calculate the magnetisation of the material.
χ = I/H,
I = χ H = 3.7x10-3 x 104
= 37 Am-1.
30. What are the properties required for a material to be suitable for making electromagnet? Give
examples.
Easy to magnetize and demagnetize,
Low coercivity,
high permeability
St.Joseph’s College of Engineering/St. Joseph’s Institute of Technology 12
Code &Subject: PH8252 & Physics for Information Science, Dept. Name : PHYSICS Academic Year : 2017- 2018
region. Therefore, holes in the region move toward the anode, and electrons move toward the cathode, and
a photocurrent will be generated.
20. What is LED? List out the features of LED.
LED is a Light emitting diode which emits light when it is forward biased.
1. Lower energy consumption.
2. Longer life time.
3. Better physical robustness.
4. Smaller/handy size
5. High switching rate.
21. What is the basic principle behind LED?
The injection of electron into the p region from n region makes a direct transition from the
conduction band to valance band then the electrons recombine with the holes and emit photons of energy
Eg. where Eg= hν.
22. What are the advantages of LEDs?
(i) They are smaller in size and long life time.
(ii) Low drive voltage and low noise.
(iii) It is easily interfaced to digital logic circuits.
(iv) Can be operated in wide range of temperatures.
23. What are the disadvantages of LEDs?
(i) Requires high power.
(ii) Preparation cost is high when compared to LCDs.
24. What are the applications of LEDs?
(i) Used as indicator lamps
(ii) Light sources in fiber optic communication system.
(iii) Used in image sensing circuits for picture phone.
25. Why group III and group V elements alone should be chosen for manufacturing LEDs?
If the wavelength of the light emitted has to lie in the visible region, energy band gap of the
material chosen should have the range from 1.723 to 3.101eV. Since the intermediate compounds of group
III and group V has Eg between these ranges.
26. What is Organic Light Emitting Diodes or OLED?
OLEDs are solid state devices made up of thin films of organic molecules that produce light with
the application of electricity.
27. Compare LED with OLED.
S.No LED OLED
1. Emits light while conducting Self-illuminating since organic materials are used
2. Small viewing angle Wide viewing angle
3. Less efficient More efficient
4. Broad and heavy Light and thin
5. Less expensive More expensive
28. What are laser diodes?
A laser diode, also known as an injection laser or diode laser, is a semiconductor device that
produces coherent radiation (in which the waves are all at the same frequency and phase) in the visible
or infrared (IR) spectrum when current passes through it.
29. What is meant by optical data storage?
Optical storage devices use a laser to burn small, dark pits into the surface of a disk. The pits are
dark and the places without pits remain shiny and smooth. Binary codes can be stored to dark shiny places
on the storage medium. Since the information can be stored in optical meant, it is called optical data
storage.
30. List out the various data storage techniques.
CD- ROM, CD-RW, DVD, Blu-ray disks, Magneto optical disk and Holography.
31. What are activators and co- activators?
Activators : The impurity ions which leads to the production of traps are called activators.
Co- activators: The ionic charges present along with the impurities are called Co- activators.
32. How an LED can be converted into laser diode?
In semiconductor diodes if the emission is not stimulated, the device is called LED. To convert
LED into laser diode, high current density is required to achieve population inversion and the opposite
surface should be polished.
33. What are the advantages of optical data storage?
Immune to dust, high storage capacity, removable and relatively inexpensive.
34. How are DVD classified?
S.No Types of DVD Storage capacity
1. Single layer DVDs 4.7 GB
2. Double layer DVDs 8.5 GB
3. Double sided DVDs 17 GB
4. HD- DVD 15 GB
5. Double layer HD-DVD 30 GB
35. Distinguish between magnetic and optical storage devices.
S.No Magnetic storage devices Optical storage devices
1. Data are stored using magnetic Data are stored using optical principle
principle
2. Access time is slow Very fast
3. Ex: Floppy disk Ex: CD’s
36. Distinguish between photography and holography.
S.No Photography Holography
1. Ordinary light is used Laser light is used
2. It gives 2D pictures It gives 3D pictures
3. Lens is used No lens is used
37. Explain the importance of holographic storage.
Each point of an object is recorded on the whole hologram
From each piece of a hologram we can reconstruct a image
The phase and amplitude information in the reflected waves from the object are completely
recorded in the hologram.
38. Why is the shape of LED made hemispherical?
In planar LED’s the emitted light strikes the material interface at an angle greater than the
critical angle and the reflection loss will be very high. Therefore, to minimize the reflection loss,
hemispherical dome shaped LED is made, in which the angle at which the emitted light strikes the interface
can be made less than the critical angle.
PART-B
1. (i) What are the types of optical materials?
(ii) Further explain the phenomenon of absorption, emission and scattering.
2. Explain the principle, construction and working of a photodiode.
3. Explain the principle and working of a quantum dot laser.
4. Explain the working of LED. What are the types of LED? Explain the advantages.
5. (i) Explain the construction and working of LASER Diode.
(ii) Compare photodiode with laser diode.
6. (i) Describe the principle, construction working of solar cell.
(ii) Give the advantages, disadvantages and application of solar cell.
7. (i) What is meant by optical data storage?
(ii) List out the different types of optical storage techniques and describe any one in detail.
8. (i) What is meant by CD?
(ii) Explain how data can be recorded in and read out from a CD/DVD.
the length of the conductor and l represents the electron mean free path in the material, then such a situation
can exists for condition, L<< l. Carrier transport under this condition is known as ballistic transport.
29. What are metallic nano wires?
Metallic nano wires are made up of metals, which possess thickness or diameter in the range from
1-100 nm. It is a typical example of two dimensional nano particles.
30. What are CNTs?
Carbon nano tubes (CNTs) are molecular- scale tubes of graphitic carbon having outstanding
properties. They are among the stiffest and strongest fibres known, and have remarkable electronic
properties.
They belong to the fullerence structural family. CNTs are allotropes of carbon with a nanostructure
that can have a length-to-diameter ratio of upto 28,000,000:1 which significantly larger than any other
material.
31. Write the physical properties of CNTs.
CNTs are one of the strongest and stiffest materials known, in terms of tensile strength and
elastic modulus respectively.
They can recover from severe structural distortions due to their ability to rehybridize.
32. Write some electrical properties of CNTs.
CNTs can be either metallic or semiconducting, depending upon the chirality.
For example, the armchair form is metallic, whereas the zigzag form.is found to be
semiconducting.
The energy gap of semiconducting CNTs inversely proportional to the diameter of the tube.
The energy band gap can also be affected by localized defects.
33. Mention some thermal properties of CNTs.
It is predicted that CNTs will be able to achieve conductivities up to 20 times more than that of
copper, a metal well known for its conductivity.
The temperature stability of CNTs is estimated to be up to 2800 ˚C in vacuum and about 750 ˚C
in air.
34. Mention the types of carbon nano tube structure.
Three types of nanotube structures are considered by rolling the graphite sheet with different
orientations about the axis. They are,
(i) Armchair structure
(ii) Zig-Zag structure
(iii) Chiral structure
35. How carbon nanotubes are classified?
Based on the number of layers, the carbon nanotubes are classified as
(i) Single-walled (SWNTs)
(ii) Multi-walled (MWNTs)
In multi-walled nanotubes, more than one CNTs are coaxially arranged.
36. List some applications of CNTs.
Electrical circuits: Due to their unusual current conduction mechanism, CNTs make ideal
components in electrical circuits. They are used in terahertz sources (switching instruments) and
sensors.
CNT composite: A plastic composite of CNT has been shown to act as a lightweight shielding
material against electromagnetic radiations.
Computer applications: CNTs can be used to develop switching devices for use in computers.
Fibres and fabrics: Fibres spun of pure CNTs, along with CNT composite fibres, have exceptional
mechanical strength. Such super-strong fibres have many applications, such as in body and vehicle
armour, transmission line cables, woven fabrics, and stain-resistant textiles.
37. What we will observe when we decrease the size of the particle to nano size?
If we decrease the size of the particle to nano size, the decrease in confining size creates the energy
levels discrete. The formation of discrete energy levels increases or widens up the band gap and finally the
band gap energy also increases.
PART – B
1. Derive the expression for the density of states for different quantum confinements.
2. Explain quantum well, quantum wire and quantum dot.
3. Explain the single electron phenomenon and working of single electron transistor.
4. Describe the properties and applications of carbon nano tubes.
5. Explain the types and methods of preparation of carbon nano tubes.
6. Explain construction and working of quantum dot laser.
7. Derive an expression for about quantum conductance and quantum resistance.
8. Write short notes on quantum tunneling.
9. Write a short note on band gap of nano materials.