DIP Type Transistors

PNP Transistors
KTA1046
TO-220F Unit: mm

±0.20
±0.20
0
±0
.2 2.54 ±0.20
18 0.70 ±0.20
3.
φ

6.68 ±0.20
■ Features

15.87 ±0.20

3.30 ±0.20
● Low saturation voltage and good linearity of hFE.

12.42 ±0.20
● Complementary to KTC2026 2.76 ±0.20

1.47max

9.75 ±0.20
0.50 ±0.20

2.54typ
0.80 ±0.20
1. Base
2.54typ 2. Collector
■ Absolute Maximum Ratings Ta = 25℃ 3. Emitter

Parameter Symbol Rating Unit

Collector - Base Voltage VCBO -60
Collector - Emitter Voltage VCEO -60 V
Emitter - Base Voltage VEBO -7
Collector Current - Continuous IC -3
A
Base Current IB -0.5
Collector Power Dissipation Ta = 25℃ 2
PC W
Tc = 25℃ 25
Junction Temperature TJ 150
℃
Storage Temperature range Tstg -55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter Symbol Test Conditions Min Typ Max Unit
Collector- base breakdown voltage VCBO Ic= -10 mA， IE=0 -60
Collector- emitter breakdown voltage VCEO Ic= -50 mA，IB=0 -60 V
Emitter - base breakdown voltage VEBO IE= -10 mA， IC=0 -7
Collector-base cut-off current ICBO VCB= -60V , IE=0 -0.1
uA
Emitter cut-off current IEBO VEB= -7V , IC=0 -0.1
Collector-emitter saturation voltage VCE(sat) IC=-2 A, IB=-200mA -1
Base - emitter saturation voltage VBE(sat) IC=-2 A, IB=-200mA -1.2 V
Base - emitter voltage VBE VCE= -5V, IC= -500 mA -1
hFE(1) VCE= -5V, IC= -500 mA 100 300
DC current gain
hFE(2) VCE= -5V, IC= -3 A 20

Turn-on Time ton 0.4

Storage Time tstg 1.7 us

Fall Time tf 0.5

Collector output capacitance Cob VCB= -10V, IE= 0,f=1MHz 45 pF

Transition frequency fT VCE= -5V, IC= -500mA 30 MHz

■ Classification of hfe(1)
Type KTA1046-Y KTA1046-G
Range 100-200 160-300

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 DIP Type Transistors

PNP Transistors
KTA1046
■ Typical Characterisitics

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