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FDD5N50 N-Channel MOSFET

December 2007

UniFETTM
FDD5N50
tm
N-Channel MOSFET
500V, 4A, 1.4Ω
Features Description
• RDS(on) = 1.15Ω ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
• Low gate charge ( Typ. 11nC) stripe, DMOS technology.
• Low Crss ( Typ. 5pF) This advanced technology has been especially tailored to
• Fast switching minimize on-state resistance, provide superior switching
performance, and withstand high energy pluse in the avalanche
• 100% avalanche tested and commutation mode. These devices are well suited for high
efficient switched mode power suppliesand active power
• Improved dv/dt capability
factor correction.
• RoHS compliant

D
G
G
S
D-PAK
S

MOSFET Maximum Ratings TC = 25oC unless otherwise noted*


Symbol Parameter Ratings Units
VDSS Drain to Source Voltage 500 V
VGSS Gate to Source Voltage ±30 V
-Continuous (TC = 25oC) 4
ID Drain Current A
-Continuous (TC = 100oC) 2.4
IDM Drain Current - Pulsed (Note 1) 16 A
EAS Single Pulsed Avalanche Energy (Note 2) 256 mJ
IAR Avalanche Current (Note 1) 4 A
EAR Repetitive Avalanche Energy (Note 1) 4 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
(TC = 25oC) 40 W
PD Power Dissipation
- Derate above 25oC 0.3 W/oC
o
TJ, TSTG Operating and Storage Temperature Range -55 to +150 C
Maximum Lead Temperature for Soldering Purpose, o
TL 300 C
1/8” from Case for 5 Seconds

Thermal Characteristics
Symbol Parameter Ratings Units
RθJC Thermal Resistance, Junction to Case 1.4 o
C/W
RθJA Thermal Resistance, Junction to Ambient 110

©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com


FDD5N50 Rev. A
FDD5N50 N-Channel MOSFET
Package Marking and Ordering Information TC = 25oC unless otherwise noted
Device Marking Device Package Reel Size Tape Width Quantity
FDD5N50 FDD5N50TM D-PAK 380mm 16mm 2500
FDD5N50 FDD5N50TF D-PAK 380mm 16mm 2000

Electrical Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics
BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V, TJ = 25oC 500 - - V
∆BVDSS Breakdown Voltage Temperature
ID = 250µA, Referenced to 25oC - 0.6 - V/oC
∆TJ Coefficient
VDS = 500V, VGS = 0V - - 1
IDSS Zero Gate Voltage Drain Current µA
VDS = 400V, TC = 125oC - - 10
IGSS Gate to Body Leakage Current VGS = ±30V, VDS = 0V - - ±100 nA

On Characteristics
VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250µA 3.0 - 5.0 V
RDS(on) Static Drain to Source On Resistance VGS = 10V, ID = 2A - 1.15 1.4 Ω
gFS Forward Transconductance VDS = 20V, ID = 2A (Note 4) - 4.3 - S

Dynamic Characteristics
Ciss Input Capacitance - 480 640 pF
VDS = 25V, VGS = 0V
Coss Output Capacitance - 66 88 pF
f = 1MHz
Crss Reverse Transfer Capacitance - 5 8 pF
Qg(tot) Total Gate Charge at 10V - 11 15 nC
Qgs Gate to Source Gate Charge VDS = 400V, ID = 5A - 3 - nC
VGS = 10V
Qgd Gate to Drain “Miller” Charge (Note 4, 5) - 5 - nC

Switching Characteristics
td(on) Turn-On Delay Time - 13 36 ns
tr Turn-On Rise Time VDD = 250V, ID = 5A - 22 54 ns
td(off) Turn-Off Delay Time RG = 25Ω - 28 66 ns
tf Turn-Off Fall Time (Note 4, 5) - 20 50 ns

Drain-Source Diode Characteristics


IS Maximum Continuous Drain to Source Diode Forward Current - - 4 A
ISM Maximum Pulsed Drain to Source Diode Forward Current - - 16 A
VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 4A - - 1.4 V
trr Reverse Recovery Time VGS = 0V, ISD = 5A - 300 - ns
Qrr Reverse Recovery Charge dIF/dt = 100A/µs (Note 4) - 1.8 - µC

Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L = 32mH, IAS = 4A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3: ISD ≤ 4A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4: Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5: Essentially Independent of Operating Temperature Typical Characteristics

FDD5N50 Rev. A 2 www.fairchildsemi.com


FDD5N50 N-Channel MOSFET
Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics


20 20
VGS = 15.0V
10 10.0V
8.0 V
10
7.0 V
6.5 V
ID,Drain Current[A]

ID,Drain Current[A]
6.0 V
o
5.5 V 150 C

1 o
25 C
1
o
-55 C

*Notes: *Notes:
0.1 1. 250µs Pulse Test 1. VDS = 20V
o
2. TC = 25 C 2. 250µs Pulse Test
0.04 0.1
0.1 1 10 30 4 5 6 7 8
VDS,Drain-Source Voltage[V] VGS,Gate-Source Voltage[V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage


Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
3.0 70
Drain-Source On-Resistance

IS, Reverse Drain Current [A]

2.5
o
150 C
RDS(ON) [Ω],

10
2.0 VGS = 10V
o
25 C

1.5 VGS = 20V


*Notes:
1. VGS = 0V
o
*Note: TJ = 25 C 2. 250µs Pulse Test
1.0 1
0 3 6 9 12 0.4 0.8 1.2 1.6
ID, Drain Current [A] VSD, Body Diode Forward Voltage [V]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics


1000 10
Ciss = Cgs + Cgd (Cds = shorted)
VDS = 100V
Coss = Cds + Cgd
VDS = 250V
VGS, Gate-Source Voltage [V]

Crss = Cgd
8 VDS = 400V
750 *Note:
1. VGS = 0V
Capacitances [pF]

2. f = 1MHz 6
Ciss
500
Coss 4

250
2
Crss
*Note: ID = 5A
0 0
0.1 1 10 30 0 4 8 12
VDS, Drain-Source Voltage [V] Qg, Total Gate Charge [nC]

FDD5N50 Rev. A 3 www.fairchildsemi.com


FDD5N50 N-Channel MOSFET
Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation


vs. Temperature vs. Temperature
1.2 3.0
Drain-Source Breakdown Voltage

2.5

Drain-Source On-Resistance
1.1
BVDSS, [Normalized]

RDS(on), [Normalized]
2.0

1.0 1.5

1.0
0.9
*Notes: 0.5 *Notes:
1. VGS = 0V 1. VGS = 10V
2. ID = 250µA 2. ID = 2A
0.8 0.0
-75 -25 25 75 125 175 -75 -25 25 75 125 175
o o
TJ, Junction Temperature [ C] TJ, Junction Temperature [ C]

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
30 4.5
30µs
4
10 100µs
ID, Drain Current [A]

ID, Drain Current [A]

1ms
3

1 10ms

DC 2
Operation in This Area
is Limited by R DS(on)
0.1 *Notes:
o
1
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
0.01 0
1 10 100 800 25 50 75 100 125 150
o
VDS, Drain-Source Voltage [V] TC, Case Temperature [ C]

Figure 11. Transient Thermal Response Curve

3
Thermal Response [ZθJC]

1
0.5

0.2
PDM
0.1
t1
0.1 0.05 t2
*Notes:
0.02 o
0.01
1. ZθJC(t) = 1.4 C/W Max.
2. Duty Factor, D= t1/t2
Single pulse 3. TJM - TC = PDM * ZθJC(t)
0.01
-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10
Rectangular Pulse Duration [sec]

FDD5N50 Rev. A 4 www.fairchildsemi.com


FDD5N50 N-Channel MOSFET
Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

FDD5N50 Rev. A 5 www.fairchildsemi.com


FDD5N50 N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT +

V DS

I SD
L

D r iv e r
R G
S am e T ype
as DUT V DD

V G S • d v / d t c o n t r o lle d b y R G
• I S D c o n t r o lle d b y p u ls e p e r io d

G a t e P u ls e W id th
V GS D = --------------------------
G a te P u ls e P e r io d 10V
( D r iv e r )

I F M , B o d y D io d e F o r w a r d C u r r e n t
I SD
( DUT ) d i/ d t

IR M

B o d y D io d e R e v e r s e C u r r e n t
V DS
( DUT ) B o d y D io d e R e c o v e r y d v / d t

V SD
V DD

B o d y D io d e
F o r w a r d V o lt a g e D r o p

FDD5N50 Rev. A 6 www.fairchildsemi.com


FDD5N50 N-Channel MOSFET
Mechanical Dimensions

D-PAK

Dimensions in Millimeters

FDD5N50 Rev. A 7 www.fairchildsemi.com


FDD5N50 N-Channel MOSFET
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PRODUCT STATUS DEFINITIONS


Definition of Terms
Datasheet Identification Product Status Definition
This datasheet contains the design specifications for product development.
Advance Information Formative or In Design
Specifications may change in any manner without notice.
This datasheet contains preliminary data; supplementary data will be pub-
Preliminary First Production lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
This datasheet contains final specifications. Fairchild Semiconductor reserves
No Identification Needed Full Production
the right to make changes at any time without notice to improve design.
This datasheet contains specifications on a product that has been discontin-
Obsolete Not In Production ued by Fairchild semiconductor. The datasheet is printed for reference infor-
mation only.
Rev. I32

FDD5N50 Rev. A 8 www.fairchildsemi.com