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Lecture 5
CMOS CIRCUITS
TN 423 VLSI 4
UDOM
CMOS Gate Design…
Signal Strength
Ω The strength of a signal is measured by how
closely it approximates an ideal voltage source.
Ω VDD and GND rails are strongest 1 and 0
respectively
Ω nMOS transistor passes strong 0 but degraded
or weak 1
Ω pMOS transistor passes strong 1
✓ But degraded or weak 0
Ω Thus nMOS are best for pull-down network
TN 423 VLSI UDOM 5
CMOS Gate Design…
A Y
VDD OFF
ON
0
1
A Y ON
OFF
A Y
0 1
1 0
GND
TN 423 VLSI UDOM 10
Combinational Circuits…
CMOS NAND Gate
follow this video:
OFF
ON
OFF
ON OFF
ON
1
0 A B Y ON
OFF
Y 0 0 1
0
1
1
0 OFF
ON
ON
OFF
A 0 1 1
1 0 1
B
1 1 0
A B Y
A
0 0 1
B 0 1 0
Y
1 0 0
1 1 0
A
B
C D
Y
D
A B C
EN
EN A Q
A Y
0 0 Z
EN 0 1 Z
A Y 1 0 0
A Y
D1
S Y
D0
D1 4 2
S 4 2 Y
D0 4 2
2
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Transmission Gate Mux
Ω Nonrestoring mux uses two transmission gates
✓ Only 4 transistors
S
D0
S Y
D1
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Inverting Mux
Ω Inverting multiplexer
✓ Use compound AOI22
✓ Or pair of tristate inverters
✓ Essentially the same thing
Ω Noninverting multiplexer adds an inverter
D0 S D0 D1 S
S D1 S S
Y Y D0 0
S S S S Y
D1 1
TN 423 VLSI 37
UDOM
4:1 Multiplexer
Ω 4:1 mux chooses one of 4 inputs using two
selects
✓ Two levels of 2:1 muxes S1S0 S1S0 S1S0 S1S0
✓ Or four tristates
D0
S0 S1
D0 0
D1
D1 1
0
Y Y
1
D2 0 D2
D3 1
D3
TN 423 VLSI 38
UDOM
D Latch
Ω When CLK = 1, latch is transparent
✓ D flows through to Q like a buffer
Ω When CLK = 0, the latch is opaque
✓ Q holds its old value independent of D
Ω a.k.a. transparent latch or level-sensitive latch
CLK CLK
D
Latch
D Q
Q
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D Latch Design
Ω Multiplexer chooses D or old Q
CLK
CLK
D Q Q
1
Q D Q
0
CLK CLK
CLK
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D Latch Operation
Q Q
D Q D Q
CLK = 1 CLK = 0
CLK
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D Flip-flop
Ω When CLK rises, D is copied to Q
Ω At all other times, Q holds its value
Ω a.k.a. positive edge-triggered flip-flop, master-
slave flip-flop
CLK
CLK
D
Flop
D Q
Q
TN 423 VLSI 42
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D Flip-flop Design
Ω Built from master and slave D latches
CLK CLK
CLK QM
D Q
CLK CLK CLK CLK
CLK
Latch
Latch
QM
D Q
CLK CLK
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D Flip-flop Operation
QM Q
D
CLK = 0
QM
D Q
CLK = 1
CLK
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Gate Layout
Ω Layout can be very time consuming
✓ Design gates to fit together nicely
✓ Build a library of standard cells
Ω Standard cell design methodology
✓ VDD and GND should abut (standard height)
✓ Adjacent gates should satisfy design rules
✓ nMOS at bottom and pMOS at top
✓ All gates include well and substrate contacts
TN 423 VLSI 45
UDOM