AON4805L

Dual P-Channel Enhancement Mode Field Effect Transistor

General Description Features

The AON4805L uses advanced trench technology to VDS (V) = -20V

provide excellent RDS(ON), low gate charge and ID = -4.5A (VGS = -4.5V)
operation with gate voltage as low as 1.8V. This RDS(ON) < 65mΩ (VGS = -4.5V)
device is suitable for use as a load switch or in PWM RDS(ON) < 85mΩ (VGS = -2.5V)
applications.
RDS(ON) < 115mΩ (VGS = -1.8V)
-RoHS Compliant
-Halogen Free

DFN 3x2
Top View Bottom View D1 D2

Pin 1 S1 1 8 D1
G1 2 7 D1
S2 3 6 D2
G2 4 5 D2
G1 G2
S1 S2

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol MOSFET Units
Drain-Source Voltage VDS -20 V
Gate-Source Voltage V GS ±8 V
Continuous Drain TA=25°C -4.5
Current TA=70°C ID -3.5 A
C
Pulsed Drain Current IDM -25
TA=25°C 2
PD W
Power Dissipation B TA=70°C 1.3
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
A
Maximum Junction-to-Ambient t ≤ 10s 50 60 °C/W
AD RθJA
Maximum Junction-to-Ambient Steady-State 84 100 °C/W
Maximum Junction-to-Lead Steady-State RθJL 28 34 °C/W

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AON4805L

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=-250µA, VGS=0V -20 V
VDS=-20V, VGS=0V -1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C -5
IGSS Gate-Body leakage current VDS=0V, VGS=±8V ±100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -0.5 -0.67 -1 V
ID(ON) On state drain current VGS=-4.5V, VDS=-5V -25 A
VGS=-4.5V, ID=-4.5A 53 65
mΩ
TJ=125°C 72 90
RDS(ON) Static Drain-Source On-Resistance
VGS=-2.5V, ID=-3A 66 85 mΩ
VGS=-1.8V, ID=-2A 88 115 mΩ
gFS Forward Transconductance VDS=-5V, ID=-4.5A 15 S
VSD Diode Forward Voltage IS=-1A,VGS=0V -0.7 -1 V
IS Maximum Body-Diode Continuous Current -1.7 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 560 670 pF
Coss Output Capacitance VGS=0V, VDS=-10V, f=1MHz 80 pF
Crss Reverse Transfer Capacitance 70 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 15 23 Ω
SWITCHING PARAMETERS
Qg Total Gate Charge 8.5 10 nC
Qgs Gate Source Charge VGS=-4.5V, VDS=-10V, ID=-4.5A 1.2 nC
Qgd Gate Drain Charge 2.1 nC
tD(on) Turn-On DelayTime 7.2 ns
tr Turn-On Rise Time VGS=-4.5V, VDS=-10V, RL=2.2Ω, 36 ns
tD(off) Turn-Off DelayTime RGEN=6Ω 53 ns
tf Turn-Off Fall Time 56 ns
trr Body Diode Reverse Recovery Time IF=-4.5A, dI/dt=100A/µs 37 45 ns
Qrr Body Diode Reverse Recovery Charge IF=-4.5A, dI/dt=100A/µs 27 nC
2
A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation P D is based on T J(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C: Ratings are based on low frequency and duty cycles to keep initialT J=25°C.
D. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.12
2
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in FR-4 board with
2oz. Copper, assuming a maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating.
Rev0 : July 2008

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AON4805L

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

25 20
-3.0V VDS=-5V
-4.5V
20 -2.5V
15

15

-ID(A)
-ID (A)

-2.0V 10
10

VGS=-1.5V 5
5
125°C
25°C
0 0
0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3
-VDS (Volts) -VGS(Volts)
Figure 1: On-Region Characteristics(Note E) Figure 2: Transfer Characteristics(Note E)

1.6
140 VGS=-4.5V
ID=-4.5A
Normalized On-Resistance

120 1.4
VGS=-1.8V
RDS(ON) (mΩ)

VGS=-2.5V
100 ID=-3A
1.2
VGS=-2.5V VGS=-1.8V
80 ID=-2A
1
60 VGS=-4.5V

40 0.8
0 2 4 6 8 10 0 25 50 75 100 125 150 175
-ID (A) Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction
Gate Voltage(Note E) Temperature(Note E)

180 1E+02
ID=-4.5A
160 1E+01

140 12
1E+00
RDS(ON) (mΩ)

120 125°C
1E-01
-IS (A)

100
125°C 1E-02 25°C
80
1E-03
60
25°C 1E-04
40
0 2 4 6 8 1E-05
-VGS (Volts) 0.0 0.2 0.4 0.6 0.8 1.0 1.2
Figure 5: On-Resistance vs. Gate-Source -VSD (Volts)
Voltage(Note E) Figure 6: Body-Diode Characteristics(Note E)

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AON4805L

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

5 1400
VDS=-10V
ID=-4.5A 1200
4
1000

Capacitance (pF)
-VGS (Volts)

3
800
Ciss
2 600

400
1 Coss
200
Crss
0 0
0 2 4 6 8 10 0 5 10 15 20
Qg (nC) -VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100.00 1000
TJ(Max)=150°C
TA=25°C
RDS(ON) 10µs
10.00 100
limited
Power (W)
-ID (Amps)

100µ
1.00 10
1ms
10ms
0.1s
0.10 1
1s
TJ(Max)=150°C DC
TA=25°C
0.01 0.1
0.1 1 10 100 0.00001 0.001 0.1 10 1000
-VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Figure 10: Single Pulse Power Rating Junction-to-
Operating Area (Note F)
Ambient (Note F)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZθJA Normalized Transient

12
RθJA=110°C/W
Thermal Resistance

0.1
PD

0.01
Ton
T
Single Pulse
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AON4805L

Gate Charge Test Circuit & Waveform

Vgs
Qg
- -10V
VDC
-
+ Vds Qgs Qgd
VDC
+
DUT
Vgs

Ig

Charge

Resistive Switching Test Circuit & Waveforms

RL
Vds t on t off

td(on) tr t d(off) tf
Vgs
-
Vgs DUT VDC
Vdd 90%
Rg
+

Vgs 10%
Vds

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L -Isd -I F
Isd dI/dt
+ Vdd -I RM
Vgs VDC
Vdd
Ig
- -Vds

Alpha & Omega Semiconductor, Ltd. www.aosmd.com