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March 2006
FDD8780/FDU8780 DF
REE I
MP
LE
LE
M ENTATIO
25V, 35A, 8.5mΩ
N
General Description Features
This N-Channel MOSFET has been designed specifically Max rDS(on) = 8.5mΩ at VGS = 10V, ID = 35A
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM Max rDS(on) = 12.0mΩ at VGS = 4.5V, ID = 35A
controllers. It has been optimized for low gate charge, low
Low gate charge: Qg(10) = 21nC(Typ), VGS = 10V
rDS(on) and fast switching speed.
Low gate resistance
RoHS Compliant
Vcore DC-DC for Desktop Computers and Servers
G
D
S G
G D S I-PAK
Short Lead I-PAK
(TO-251AA)
S
Thermal Characteristics
RθJC Thermal Resistance, Junction to Case TO-252,TO-251 3.0 °C/W
RθJA Thermal Resistance, Junction to Ambient TO-252,TO-251 100 °C/W
RθJA Thermal Resistance, Junction to Ambient TO-252,1in2 copper pad area 52 °C/W
Off Characteristics
BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 25 V
∆BVDSS Breakdown Voltage Temperature ID = 250µA, referenced to
12 mV/°C
∆TJ Coefficient 25°C
VDS = 20V, 1
IDSS Zero Gate Voltage Drain Current µA
VGS = 0V TJ = 150°C 250
IGSS Gate to Source Leakage Current VGS = ±20V ±100 nA
On Characteristics
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 1.2 1.8 2.5 V
∆VGS(th) Gate to Source Threshold Voltage ID = 250µA, referenced to
-6.3 mV/°C
∆TJ Temperature Coefficient 25°C
VGS = 10V, ID = 35A 6.5 8.5
VGS = 4.5V, ID = 35A 9.1 12.0
rDS(on) Drain to Source On Resistance mΩ
VGS = 10V, ID = 35A
10.4 15.0
TJ = 175°C
Dynamic Characteristics
Ciss Input Capacitance 1080 1440 pF
VDS = 13V, VGS = 0V,
Coss Output Capacitance 265 355 pF
f = 1MHz
Crss Reverse Transfer Capacitance 180 270 pF
Rg Gate Resistance f = 1MHz 0.9 Ω
Switching Characteristics
td(on) Turn-On Delay Time 7 14 ns
tr Rise Time VDD = 13V, ID = 35A 9 18 ns
VGS = 10V, RGS = 17Ω
td(off) Turn-Off Delay Time 43 69 ns
tf Fall Time 24 38 ns
Qg Total Gate Charge VGS = 0V to 10V 21 29 nC
Qg Total Gate Charge VGS = 0V to 5V VDD = 13V 11.2 16 nC
ID = 35A
Qgs Gate to Source Gate Charge 3.5 nC
Ig = 1.0mA
Qgd Gate to Drain “Miller”Charge 4.7 nC
2 www.fairchildsemi.com
FDD8780/FDU8780 Rev. B
FDD8780/FDU8780 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
70 7
50 5
VGS = 4.5V
NORMALIZED
VGS = 3.5V
40 VGS = 3.5V 4
30 3
VGS = 4.5V
20 2
VGS = 3V
10 1
VGS = 10V
0 0
0 1 2 3 4 0 10 20 30 40 50 60 70
VDS, DRAIN TO SOURCE VOLTAGE (V) ID, DRAIN CURRENT(A)
1.8 40
DRAIN TO SOURCE ON-RESISTANCE
1.2 20
TJ = 175oC
1.0
10
0.8
TJ = 25oC
0.6 0
-80 -40 0 40 80 120 160 200 3.0 4.5 6.0 7.5 9.0 10
TJ, JUNCTION TEMPERATURE (oC) VGS, GATE TO SOURCE VOLTAGE (V)
70 200
100
IS, REVERSE DRAIN CURRENT (A)
10
50
TJ = 175oC
40 TJ = 175oC 1
TJ = 25oC
30
TJ = 25oC 0.1
20
TJ = -55oC
0.01
10 TJ = -55oC
0 1E-3
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)
3 www.fairchildsemi.com
FDD8780/FDU8780 Rev. B
FDD8780/FDU8780 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
10 4000
VGS, GATE TO SOURCE VOLTAGE(V)
VDD = 10V
8
Ciss
CAPACITANCE (pF)
6 1000
VDD = 13V
4
VDD = 16V Crss Coss
2 f = 1MHz
VGS = 0V
0 100
0 5 10 15 20 25 0.1 1 10 30
Qg, GATE CHARGE(nC) VDS, DRAIN TO SOURCE VOLTAGE (V)
50 70
IAS, AVALANCHE CURRENT(A)
50 VGS = 10V
TJ = 25oC
10 40
TJ = 125oC
30
VGS = 4.5V
20
TJ = 150oC
o
10 RθJC = 3.0 C/W
1 0
0.01 0.1 1 10 100 300 25 50 75 100 125 150 175
tAV, TIME IN AVALANCHE(ms) TA, AMBIENT TEMPERATURE(oC)
Figure 9. Unclamped Inductive Switching Figure 10. Maximum Continuous Drain Current vs
Capability Case Temperature
500 7000
TC = 25oC
P(PK), PEAK TRANSIENT POWER (W)
CURRENT AS FOLLOWS:
100us 1000
175 – T C
10 I = I25 -----------------------
150
LIMITED BY 1ms
PACKAGE
1 10ms
100
OPERATION IN THIS SINGLE PULSE
AREA MAY BE TJ = MAX RATED DC SINGLE PULSE
LIMITED BY rDS(on) TC = 25oC
0.1 30 -5
1 10 50 10 10
-4
10
-3
10
-2
10
-1
10
0
10
1
Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power
Dissipation
4 www.fairchildsemi.com
FDD8780/FDU8780 Rev. B
FDD8780/FDU8780 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
NORMALIZED THERMAL
0.2
IMPEDANCE, ZθJC
0.1
0.05 PDM
0.1
0.02
0.01
t1
t2
0.01
NOTES:
SINGLE PULSE DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
1E-3
-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10
t, RECTANGULAR PULSE DURATION(s)
5 www.fairchildsemi.com
FDD8780/FDU8780 Rev. B
FDD8780/FDU8780 N-Channel PowerTrench® MOSFET
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™ FAST® ISOPLANAR™ PowerSaver™ SuperSOT™-6
ActiveArray™ FASTr™ LittleFET™ PowerTrench® SuperSOT™-8
Bottomless™ FPS™ MICROCOUPLER™ QFET® SyncFET™
Build it Now™ FRFET™ MicroFET™ QS™ TCM™
CoolFET™ GlobalOptoisolator™ MicroPak™ QT Optoelectronics™ TinyLogic®
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DOME™ HiSeC™ MSX™ RapidConfigure™ TruTranslation™
EcoSPARK™ I2C™ MSXPro™ RapidConnect™ UHC™
E2CMOS™ i-Lo™ OCX™ µSerDes™ UltraFET®
EnSigna™ ImpliedDisconnect™ OCXPro™ ScalarPump™ UniFET™
FACT™ IntelliMAX™ OPTOLOGIC® SILENT SWITCHER® VCX™
FACT Quiet Series™ OPTOPLANAR™ SMART START™ Wire™
PACMAN™ SPM™
Across the board. Around the world.™ POP™ Stealth™
The Power Franchise® Power247™ SuperFET™
Programmable Active Droop™ PowerEdge™ SuperSOT™-3
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
As used herein:
1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support
which, (a) are intended for surgical implant into the body, or device or system whose failure to perform can be
(b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support
when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.