ST3400SRG

N Channel Enhancement Mode MOSFET

5.8A
DESCRIPTION

The ST3400SRG is the N-Channel logic enhancement mode power field effect transistor
is produced using high cell density, DMOS trench technology.
This high-density process is especially tailored to minimize on-state resistance. These
devices are particularly suited for low voltage application such as cellular phone and
notebook computer power management and other battery powered circuits where high
side switching.

PIN CONFIGURATION FEATURE

SOT-23

30V/5.8A, RDS(ON) = 25mΩ (Typ.)
3 @VGS = 10V

30V/4.8A, RDS(ON) = 30mΩ
@VGS = 4.5V
D

30V/4.0A, RDS(ON) = 40mΩ
@VGS = 2.5V
G S

Super high density cell design for
extremely low RDS(ON)
1 2
Exceptional on-resistance and maximum
DC current capability

SOT-23 package design
1.Gate 2.Source 3.Drain

PART MARKING
SOT-23

A0YA

1 2

Y: Year Code A: Week Code

1
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stnasontech.com

STN3400SRG 2009. V1
 ST3400SRG
N Channel Enhancement Mode MOSFET

5.8A
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )

Parameter Symbol Typical Unit

Drain-Source Voltage VDSS 30 V

Gate-Source Voltage VGSS ±12 V

TA=25℃ 5.8
Continuous Drain CurrentTJ=150℃) ID A
TA=70℃ 3.5

Pulsed Drain Current IDM 25 A

Continuous Source Current (Diode Conduction) IS 1.7 A

TA=25℃ 2.0
Power Dissipation PD W
TA=70℃ 1.3

Operation Junction Temperature TJ 150 ℃

Storgae Temperature Range TSTG -55/150 ℃

Thermal Resistance-Junction to Ambient RθJA 90 ℃/W

2
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stnasontech.com

STN3400SRG 2009. V1
 ST3400SRG
N Channel Enhancement Mode MOSFET

5.8A
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )

Parameter Symbol Condition Min Typ Max Unit

Static
Drain-Source Breakdown
V(BR)DSS VGS=0V,ID=250uA 30 V
Voltage
Gate Threshold Voltage VGS(th) VDS=VGS,ID=250uA 0.5 1.5 V

Gate Leakage Current IGSS VDS=0V,VGS=±12V ±100 nA

VDS=24V,VGS=0V 1
Zero Gate Voltage Drain
IDSS VDS=24V,VGS=0V
Current 10 uA
TJ=55℃
VGS=10V,ID=5.8A 25
Drain-source On-Resistance RDS(on) VGS=4.5V,ID=4.8A 30 mΩ
VGS=2.5V,ID=4.0A 40

Forward Transconductance gfs VDS=4.5V,ID=5.8A 12 S

Diode Forward Voltage VSD IS=1.7A,VGS=0V 1.2 V

Dynamic
Total Gate Charge Qg 9.7 18
VDS=15V
Gate-Source Charge Qgs VGS=10V 1.6
nC
ID≡6.7A
Gate-Drain Charge Qgd 3.1
Input Capacitance Ciss VDS=15V 450
Output Capacitance Coss VGS=0V 240
pF
Reverse Transfer Capacitance Crss F=1MHz 38

td(on) VDD=15V 7 15
Turn-On Time tr RL=15Ω
10 20
ID=1.0A nS
td(off) VGEN=10V 20 40
Turn-Off Time tf RG=6Ω 11 20

3
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stnasontech.com

STN3400SRG 2009. V1
 ST3400SRG
N Channel Enhancement Mode MOSFET

5.8A
TYPICAL CHARACTERICTICS (25℃ Unless noted)

4
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stnasontech.com

STN3400SRG 2009. V1
 ST3400SRG
N Channel Enhancement Mode MOSFET

5.8A
TYPICAL CHARACTERICTICS (25℃ Unless noted)

5
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stnasontech.com

STN3400SRG 2009. V1
 ST3400SRG
N Channel Enhancement Mode MOSFET

5.8A
SOT-23 PACKAGE OUTLINE

6
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stnasontech.com

STN3400SRG 2009. V1